Ali Razavieh, Ph.D.
Affiliations: | 2014 | Electrical and Computer Engineering | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical Engineering, NanotechnologyGoogle:
"Ali Razavieh"Parents
Sign in to add mentor| David B. Janes | grad student | 2014 | Purdue | |
| (Rf linearity in low dimensional nanowire mosfets.) | ||||
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Publications
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| Razavieh A, Zeitzoff P, Nowak EJ. (2019) Challenges and Limitations of CMOS Scaling for FinFET and Beyond Architectures Ieee Transactions On Nanotechnology. 18: 999-1004 |
| Gall O, Zhong X, Schulman D, et al. (2017) Titanium Dioxide Nanowire Sensor Array Integration on CMOS Platform Using Deterministic Assembly. Nanotechnology |
| Schulman DS, Arnold AJ, Razavieh A, et al. (2017) The Prospect of Two-Dimensional Heterostructures: A Review of Recent Breakthroughs Ieee Nanotechnology Magazine. 11: 6-17 |
| Razavieh A, Mohseni PK, Jung K, et al. (2014) Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors. Acs Nano. 8: 6281-7 |
| Razavieh A, Mehrotra S, Singh N, et al. (2013) Utilizing the unique properties of nanowire MOSFETs for RF applications. Nano Letters. 13: 1549-54 |
| Razavieh A, Janes DB, Appenzeller J. (2013) Transconductance linearity analysis of 1-D, nanowire FETs in the quantum capacitance limit Ieee Transactions On Electron Devices. 60: 2071-2076 |
| Razavieh A, Singh N, Paul A, et al. (2011) A new method to achieve RF linearity in SOI nanowire MOSFETs Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium |
| Smith JT, Zhao Y, Razavieh A, et al. (2010) Ge/Si core/shell nanowire structures for tunneling devices Ecs Transactions. 33: 707-714 |