Hengji Zhang, Ph.D.

Affiliations: 
2013 Physics University of Texas at Dallas, Richardson, TX, United States 
Area:
General Physics, Nanoscience, Materials Science Engineering
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SNBCP

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Kyeongjae Cho grad student 2013 UT Dallas
 (Multiscale modeling of thermal transport and thermoelectric properties of defected nanostructures.)
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Publications

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Huang J, Zhang H, Lucero A, et al. (2016) Organic-inorganic hybrid semiconductor thin films deposited using molecular-atomic layer deposition (MALD) Journal of Materials Chemistry C. 4: 2382-2389
Kong F, Longo RC, Zhang H, et al. (2016) Charge-transfer modified embedded-atom method for manganese oxides: Nanostructuring effects on MnO2 nanorods Computational Materials Science. 121: 191-203
Kong F, Zhang H, Longo RC, et al. (2016) A large-scale simulation method on complex ternary Li-Mn-O compounds for Li-ion battery cathode materials Computational Materials Science. 112: 193-204
Gong C, Zhang H, Wang W, et al. (2015) Erratum: “Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors” [Appl. Phys. Lett. 103, 053513 (2013)] Applied Physics Letters. 107: 139904
Zhang H, Zheng T, Gnade B, et al. (2015) The effect of point defects and nanoparticles on thermal conductivity of magnesium silicide Computational Materials Science. 104: 172-176
Fonseca AF, Zhang H, Cho K. (2015) Formation energy of graphene oxide structures: A molecular dynamics study on distortion and thermal effects Carbon. 84: 365-374
Zhang H, Lee G, Gong C, et al. (2014) Grain Boundary Effect on Electrical Transport Properties of Graphene The Journal of Physical Chemistry C. 118: 2338-2343
Zhang H, Fonseca AF, Cho K. (2014) Tailoring thermal transport property of graphene through oxygen functionalization Journal of Physical Chemistry C. 118: 1436-1442
Borders TL, Fonseca AF, Zhang H, et al. (2013) Developing descriptors to predict mechanical properties of nanotubes. Journal of Chemical Information and Modeling. 53: 773-82
Gong C, Zhang H, Wang W, et al. (2013) Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors Applied Physics Letters. 103
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