Robert H. Rediker, PhD
Affiliations: | Electrical Engineering | Massachusetts Institute of Technology, Cambridge, MA, United States |
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"Robert Rediker"Bio:
http://ethw.org/Oral-History:Robert_Rediker
Mean distance: 16.53 (cluster 17) | S | N | B | C | P |
Cross-listing: Physics Tree
Parents
Sign in to add mentor| Bruno Benedetto Rossi | grad student | 1950 | MIT (Physics Tree) | |
| (Analysis of burst-producing penetrating particles at 10,600 feet) | ||||
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Publications
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| Rediker RH, Zollars BG, Lind TA, et al. (1989) Measurement of the wave front of a pulsed dye laser using an integrated-optics sensor with 200-nsec temporal resolution. Optics Letters. 14: 381-3 |
| Anderson KK, Rediker RH. (1987) High-spectral-purity cw and pulse output from an ensemble of discrete diode lasers Applied Physics Letters. 50: 1-3 |
| Hinkley ED, Rediker RH. (1967) GaAsInSb graded-gap heterojunction Solid State Electronics. 10: 671-687 |
| Besson JM, Butler JF, Calawa AR, et al. (1965) Pressure-tuned PbSe diode laser Applied Physics Letters. 7: 206-208 |
| Butler JF, Calawa AR, Phelan RJ, et al. (1964) PbTe diode laser Applied Physics Letters. 5: 75-77 |
| Butler JF, Calawa AR, Phelan RJ, et al. (1964) PbSe diode laser Solid State Communications. 2: 303-304 |
| Phelan RJ, Calawa AR, Rediker RH, et al. (1963) Infrared InSb laser diode in high magnetic fields Applied Physics Letters. 3: 143-145 |
| Quist TM, Rediker RH, Krag WE, et al. (1963) ERRATUM: SEMICONDUCTOR MASER OF GaAs Applied Physics Letters. 2: 22-22 |
| Quist TM, Rediker RH, Keyes RJ, et al. (1962) Semiconductor maser of GaAs Applied Physics Letters. 1: 91-92 |
| Rediker RH. (1954) Ionization chamber measurements at 10 600 feet of the absorption of the N component in carbon and hydrocarbon Physical Review. 95: 526-531 |