Allen Gabor
Affiliations: | 1996 | MSE | Cornell University, Ithaca, NY, United States |
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Publications
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| Chen X, Gabor A, Samudrala P, et al. (2017) Mix-and-match considerations for EUV insertion in N7 HVM Proceedings of Spie. 10143 |
| Chen X, Turley C, Rankin J, et al. (2017) Minimizing wafer overlay errors due to EUV mask non-flatness and thickness variations for N7 production Proceedings of Spie. 10143 |
| Gabor A, Liegl B, Pike M, et al. (2010) The GridMapper challenge: How to integrate into manufacturing for reduced overlay error Proceedings of Spie - the International Society For Optical Engineering. 7640 |
| Standaert T, Gabor A, Simon A, et al. (2008) From Process Assumptions to Development to Manufacturing Mrs Proceedings. 1079 |
| Liegl B, Gabor A, Brodsky C, et al. (2008) Measuring layer-specific depth-of-focus requirements Proceedings of Spie - the International Society For Optical Engineering. 6924 |
| Sarma C, Gabor A, Halle S, et al. (2008) Double exposure double etch for dense SRAM: A designer's dream Proceedings of Spie - the International Society For Optical Engineering. 6924 |
| Croffie E, Yuan L, Cheng M, et al. (2000) Modeling influence of structural changes in photoacid generators on 193 nm single layer resist imaging Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 3340-3344 |
| Croffie E, Cheng M, Neureuther A, et al. (2000) Overview of the STORM program application to 193nm single layer resists Microelectronic Engineering. 53: 437-442 |
| Cirelli RA, Bude J, Houlihan F, et al. (2000) Probing the limits of optical lithography: the fabrication of sub-100nm devices with 193nm wavelength lithography Microelectronic Engineering. 53: 87-90 |
| Goethals AM, Pollers I, Roey Fv, et al. (1998) Lithographic performance of 193nm single and bi-layer materials Journal of Photopolymer Science and Technology. 11: 513-523 |