Taishi Takenobu
Affiliations: | Physics | Tohoku University, Japan |
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Sign in to add traineeSatria Zulkarnaen Bisri | grad student | 2006-2011 | Tohoku University, Japan |
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Publications
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Tu CL, Lin KI, Pu J, et al. (2020) CVD growth of large-area InS atomic layers and device applications. Nanoscale |
Tanaka H, Kanahashi K, Takekoshi N, et al. (2020) Thermoelectric properties of a semicrystalline polymer doped beyond the insulator-to-metal transition by electrolyte gating. Science Advances. 6: eaay8065 |
Tanaka Y, Pu J, Takenobu T. (2020) A versatile structure of light-emitting electrochemical cells for printed electronics Applied Physics Express. 13: 84002 |
Liu Q, Kanahashi K, Matsuki K, et al. (2020) Light‐Emitting Electrochemical Cells: Triethylene Glycol Substituted Diketopyrrolopyrrole‐ and Isoindigo‐Dye Based Donor–Acceptor Copolymers for Organic Light‐Emitting Electrochemical Cells and Transistors (Adv. Electron. Mater. 5/2020) Advanced Electronic Materials. 6: 2070025 |
Liu Q, Kanahashi K, Matsuki K, et al. (2020) Triethylene Glycol Substituted Diketopyrrolopyrrole‐ and Isoindigo‐Dye Based Donor–Acceptor Copolymers for Organic Light‐Emitting Electrochemical Cells and Transistors Advanced Electronic Materials. 6: 1901414 |
Tanaka H, Kawamura S, Sonar P, et al. (2020) Highly Efficient Microscopic Charge Transport within Crystalline Domains in a Furan‐Flanked Diketopyrrolopyrrole‐Based Conjugated Copolymer Advanced Functional Materials. 30: 2000389 |
Pu J, Matsuki K, Chu L, et al. (2019) Exciton Polarization and Renormalization Effect for Optical Modulation in Monolayer Semiconductors. Acs Nano |
Kawasugi Y, Seki K, Tajima S, et al. (2019) Two-dimensional ground-state mapping of a Mott-Hubbard system in a flexible field-effect device. Science Advances. 5: eaav7282 |
Chiu MH, Tang HL, Tseng CC, et al. (2019) Metal-Guided Selective Growth of 2D Materials: Demonstration of a Bottom-Up CMOS Inverter. Advanced Materials (Deerfield Beach, Fla.). e1900861 |
Kawasugi Y, Seki K, Pu J, et al. (2019) Non-Fermi-liquid behavior and doping asymmetry in an organic Mott insulator interface Physical Review B. 100 |