Niu Jin
Affiliations: | 2000-2004 | National Semiconductor Corp., Santa Clara, CA, United States |
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Parents
Sign in to add mentor| Paul R Berger | grad student | 2000-2004 | Ohio State | |
| (Silicon-based quantum functional tunneling devices and their applications to logic and other future circuit topologies.) | ||||
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Publications
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| Yu R, Anisha R, Jin N, et al. (2009) Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si∕SiGe resonant interband tunnel diodes via electron tunneling spectroscopy Journal of Applied Physics. 106: 034501 |
| Anisha R, Jin N, Chung S, et al. (2008) Strain engineered Si∕SiGe resonant interband tunneling diodes with outside barriers grown on Si0.8Ge0.2 virtual substrates Applied Physics Letters. 93: 102113 |
| Choi S, Jin N, Kumar V, et al. (2007) Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 2085 |
| Chung S, Jin N, Pavlovicz RE, et al. (2007) Analysis of the Voltage Swing for Logic and Memory Applications in Si/SiGe Resonant Interband Tunnel Diodes Grown by Molecular Beam Epitaxy Ieee Transactions On Nanotechnology. 6: 158-163 |
| Memis OG, Katsnelson A, Kong SC, et al. (2007) A photon detector with very high gain at low bias and at room temperature Applied Physics Letters. 91 |
| Jin N, Chung S, Yu R, et al. (2006) The Effect of Spacer Thicknesses on Si-Based Resonant Interband Tunneling Diode Performance and Their Application to Low-Power Tunneling Diode SRAM Circuits Ieee Transactions On Electron Devices. 53: 2243-2249 |
| Chung S, Yu R, Jin N, et al. (2006) Si/SiGe resonant interband tunnel diode with f/sub r0/ 20.2 GHz and peak current density 218 kA/cm/sup 2/ for K-band mixed-signal applications Ieee Electron Device Letters. 27: 364-367 |
| Jin N, Chung S, Yu R, et al. (2005) RF performance and modeling of Si/SiGe resonant interband tunneling diodes Ieee Transactions On Electron Devices. 52: 2129-2135 |
| Jin N, Yu R, Chung S, et al. (2005) High sensitivity Si-based backward diodes for zero-biased square-law detection and the effect of post-growth annealing on performance Ieee Electron Device Letters. 26: 575-578 |
| Jin N, Chung S, Yu R, et al. (2005) Temperature dependent DC∕RF performance of Si∕SiGe resonant interband tunnelling diodes Electronics Letters. 41: 559 |