Year |
Citation |
Score |
2011 |
Jung BJ, Martinez Hardigree JF, Dhar BM, Dawidczyk TJ, Sun J, See KC, Katz HE. Naphthalenetetracarboxylic diimide layer-based transistors with nanometer oxide and side chain dielectrics operating below one volt. Acs Nano. 5: 2723-34. PMID 21351783 DOI: 10.1021/Nn103115H |
0.474 |
|
2011 |
Özgün R, Jung BJ, Dhar BM, Katz HE, Andreou AG. Silicon-on-insulator (SOI) integration for organic field effect transistor (OFET) based circuits Proceedings - Ieee International Symposium On Circuits and Systems. 2253-2256. DOI: 10.1109/ISCAS.2011.5938050 |
0.616 |
|
2011 |
Dhar BM, Özgün R, Dawidczyk T, Andreou A, Katz HE. Threshold voltage shifting for memory and tuning in printed transistor circuits Materials Science and Engineering R: Reports. 72: 49-80. DOI: 10.1016/J.Mser.2010.11.001 |
0.583 |
|
2010 |
Dhar BM, Kini GS, Xia G, Jung BJ, Markovic N, Katz HE. Field-effect-tuned lateral organic diodes. Proceedings of the National Academy of Sciences of the United States of America. 107: 3972-6. PMID 20160116 DOI: 10.1073/Pnas.0910554107 |
0.547 |
|
2010 |
Dhar BM, Özgün R, Jung BJ, Katz HE, Andreou AG. Optimum bias of CMOS organic field effect transistor inverter through threshold adjustment of both p- and n-type devices Electronics Letters. 46: 1335-1336. DOI: 10.1049/El.2010.1603 |
0.598 |
|
2009 |
Sun J, Devine R, Dhar BM, Jung BJ, See KC, Katz HE. Improved morphology and performance from surface treatments of naphthalenetetracarboxylic diimide bottom contact field-effect transistors. Acs Applied Materials & Interfaces. 1: 1763-9. PMID 20355793 DOI: 10.1021/Am900296H |
0.459 |
|
2009 |
Pal BN, Dhar BM, See KC, Katz HE. Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors. Nature Materials. 8: 898-903. PMID 19838183 DOI: 10.1038/Nmat2560 |
0.412 |
|
2009 |
Lee T, Landis CA, Dhar BM, Jung BJ, Sun J, Sarjeant A, Lee HJ, Katz HE. Synthesis, structural characterization, and unusual field-effect behavior of organic transistor semiconductor oligomers: inferiority of oxadiazole compared with other electron-withdrawing subunits. Journal of the American Chemical Society. 131: 1692-705. PMID 19146451 DOI: 10.1021/Ja807219X |
0.478 |
|
2008 |
Landis CA, Dhar BM, Lee T, Sarjeant A, Katz HE. Syntheses, solid state structures, and electrical properties of oxadiazole-based oligomers with perfluorinated endgroups Journal of Physical Chemistry C. 112: 7939-7945. DOI: 10.1021/Jp711836B |
0.407 |
|
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