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Sajid Kabeer, Ph.D. - Publications

Affiliations: 
2010 University of Notre Dame, Notre Dame, IN, United States 
Area:
Nanoelectronics
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6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Wheeler D, Kabeer S, Lu Y, Vasen T, Zhang Q, Zhou G, Clark K, Zhu H, Kao YC, Fay P, Kosel T, Xing H, Seabaugh A. Fabrication approach for lateral InGaAs tunnel transistors 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378160  0.489
2009 Zhou G, Kabeer S, Wheeler D, Seabaugh A, Xing H. Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378147  0.447
2009 Kabeer S, Vasen T, Wheeler D, Zhang Q, Koswatta S, Zhu H, Clark K, Kuo JM, Kao YC, Corcoran S, Doyle B, Fay P, Kosel T, Xing H, Seabaugh A. Effect of dopant profile on current-voltage characteristics of p+n+ In 0.53Ga0.47As tunnel junctions 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378127  0.486
2005 Wernersson LE, Kabeer S, Zela V, Lind E, Zhang J, Seifert W, Kosel TH, Seabaugh A. A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation Ieee Transactions On Nanotechnology. 4: 594-597. DOI: 10.1109/Tnano.2005.851426  0.559
2004 Wernersson LE, Kabeer S, Zela V, Lind E, Zhang J, Seifert W, Kosel T, Seabaugh A. SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion Electronics Letters. 40: 83-85. DOI: 10.1049/El:20040048  0.554
2003 Wernersson LE, Kabeer S, Zela V, Lind E, Zhao J, Yan Y, Seifert W, Seabaugh A. A combined UHV-CVD and rapid thermal diffusion process for SiGe esaki diodes by ultra shallow junction formation 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 164-165. DOI: 10.1109/ISDRS.2003.1272043  0.538
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