Kirk H. Bevan, Ph.D. - Publications

Affiliations: 
2008 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics

42 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Miao B, Sangaré K, Iqbal A, Marsan B, Bevan KH. Interpreting interfacial semiconductor-liquid capacitive characteristics impacted by surface states: a theoretical and experimental study of CuGaS. Physical Chemistry Chemical Physics : Pccp. PMID 32869781 DOI: 10.1039/D0Cp02888F  0.367
2019 Roy-Gobeil A, Miyahara Y, Bevan KH, Grutter P. Fully Quantized Electron Transfer Observed in a Single Redox Molecule at a Metal Interface. Nano Letters. PMID 31429580 DOI: 10.1021/Acs.Nanolett.9B02032  0.386
2019 Miao B, Iqbal A, Bevan KH. Utilizing Band Diagrams To Interpret the Photovoltage and Photocurrent in Photoanodes: A Semiclassical Device Modeling Study The Journal of Physical Chemistry C. 123: 28593-28603. DOI: 10.1021/Acs.Jpcc.9B07536  0.353
2018 Bevan KH, Roy-Gobeil A, Miyahara Y, Grutter P. Relating Franck-Condon blockade to redox chemistry in the single-particle picture. The Journal of Chemical Physics. 149: 104109. PMID 30219021 DOI: 10.1063/1.5043480  0.341
2018 Zheng H, Valtierra S, Ofori-Opoku N, Chen C, Sun L, Yuan S, Jiao L, Bevan KH, Tao C. Electrical Stressing Induced Monolayer Vacancy Island Growth on TiSe2. Nano Letters. PMID 29461061 DOI: 10.1021/Acs.Nanolett.8B00515  0.333
2018 Iqbal A, Yuan S, Wang Z, Bevan KH. Impact of Bulk Trapping Phenomena on the Maximum Attainable Photovoltage of Semiconductor–Liquid Interfaces The Journal of Physical Chemistry C. 122: 23878-23889. DOI: 10.1021/Acs.Jpcc.8B06854  0.404
2017 Mascaro A, Wang Z, Hovington P, Miyahara Y, Paolella A, Gariepy V, Feng Z, Enright T, Aiken C, Zaghib K, Bevan KH, Grutter P. Measuring spatially resolved collective ionic transport on lithium battery cathodes using atomic force microscopy. Nano Letters. PMID 28627889 DOI: 10.1021/Acs.Nanolett.7B01857  0.354
2017 Bevan KH. Electron transfer from the perspective of electron transmission: Biased non-adiabatic intermolecular reactions in the single-particle picture. The Journal of Chemical Physics. 146: 134106. PMID 28390381 DOI: 10.1063/1.4979572  0.383
2017 Wang Z, Brock C, Matt A, Bevan KH. Implications of the DFT+U method on polaron properties in energy materials Physical Review B. 96. DOI: 10.1103/Physrevb.96.125150  0.351
2017 Iqbal A, Bevan KH. Simultaneously Solving the Photovoltage and Photocurrent at Semiconductor–Liquid Interfaces The Journal of Physical Chemistry C. 122: 30-43. DOI: 10.1021/Acs.Jpcc.7B08517  0.316
2017 Hossain MS, Muralidharan B, Bevan KH. A General Theoretical Framework for Characterizing Solvated Electronic Structure via Voltammetry: Applied to Carbon Nanotubes The Journal of Physical Chemistry C. 121: 18288-18298. DOI: 10.1021/Acs.Jpcc.7B05753  0.598
2016 Wang N, Bevan KH, Provatas N. Phase-Field-Crystal Model for Electromigration in Metal Interconnects. Physical Review Letters. 117: 155901. PMID 27768372 DOI: 10.1103/Physrevlett.117.155901  0.345
2016 Iqbal A, Hossain MS, Bevan KH. The role of relative rate constants in determining surface state phenomena at semiconductor-liquid interfaces. Physical Chemistry Chemical Physics : Pccp. PMID 27738683 DOI: 10.1039/C6Cp04952D  0.37
2016 Hossain MS, Iqbal A, Bevan KH. Interfacial Screening in Ultrafast Voltammetry: A Theoretical Study of Redox-Active Monolayers. Analytical Chemistry. PMID 27554012 DOI: 10.1021/Acs.Analchem.6B01835  0.35
2016 Salas JA, Varga K, Yan JA, Bevan KH. Electron Talbot effect on graphene Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.104305  0.351
2016 Wang Z, Bevan KH. Exploring the impact of semicore level electronic relaxation on polaron dynamics: An adiabatic ab initio study of FePO4 Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.024303  0.376
2016 Hossain MS, Bevan KH. Exploring Bridges between Quantum Transport and Electrochemistry. II. A Theoretical Study of Redox-Active Monolayers Journal of Physical Chemistry C. 120: 188-194. DOI: 10.1021/Acs.Jpcc.5B09654  0.393
2016 Bevan KH, Hossain MS, Iqbal A, Wang Z. Exploring Bridges between Quantum Transport and Electrochemistry. I Journal of Physical Chemistry C. 120: 179-187. DOI: 10.1021/Acs.Jpcc.5B09653  0.345
2016 Lu X, Chiu HC, Bevan KH, Jiang DT, Zaghib K, Demopoulos GP. Density functional theory insights into the structural stability and Li diffusion properties of monoclinic and orthorhombic Li2FeSiO4 cathodes Journal of Power Sources. 318: 136-145. DOI: 10.1016/J.Jpowsour.2016.04.014  0.345
2015 Timoshevskii V, Feng Z, Bevan KH, Zaghib K. Emergence of Metallic Properties at LiFePO4 Surfaces and LiFePO4/Li2S Interfaces: An Ab Initio Study. Acs Applied Materials & Interfaces. PMID 26237114 DOI: 10.1021/Acsami.5B04108  0.387
2015 Jamaux J, Iqbal A, Bevan KH. Hourglass-graded heterostructures as a possible route towards extremely efficient light emitting diodes Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/8/085001  0.323
2014 Bevan KH. A first principles scanning tunneling potentiometry study of an opaque graphene grain boundary in the ballistic transport regime. Nanotechnology. 25: 415701. PMID 25248965 DOI: 10.1088/0957-4484/25/41/415701  0.359
2014 Feng Z, Kim C, Vijh A, Armand M, Bevan KH, Zaghib K. Unravelling the role of Li2S2in lithium-sulfur batteries: A first principles study of its energetic and electronic properties Journal of Power Sources. 272: 518-521. DOI: 10.1016/J.Jpowsour.2014.07.078  0.337
2013 Feng Z, Timoshevskii V, Mauger A, Julien CM, Bevan KH, Zaghib K. Dynamics of polaron formation in Li2O2 from density functional perturbation theory Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.184302  0.365
2013 Bevan KH. Atomistic linear response voltage drop calculations for quantum transport in materials: The high conductance regime Journal of Applied Physics. 114. DOI: 10.1063/1.4820265  0.321
2013 Timoshevskii V, Feng Z, Bevan KH, Goodenough J, Zaghib K. Improving Li2O2 conductivity via polaron preemption: An ab initio study of Si doping Applied Physics Letters. 103. DOI: 10.1063/1.4818268  0.441
2013 Wang Z, Guo H, Bevan KH. First principles modeling of disorder scattering in graphene Journal of Computational Electronics. 12: 104-114. DOI: 10.1007/S10825-013-0439-X  0.303
2012 Zhao S, Fathololoumi S, Bevan KH, Liu DP, Kibria MG, Li Q, Wang GT, Guo H, Mi Z. Tuning the surface charge properties of epitaxial InN nanowires Nano Letters. 12: 2877-2882. PMID 22545811 DOI: 10.1021/Nl300476D  0.429
2012 Bevan KH, Zhu W, Stocks GM, Guo H, Zhang Z. Local fields in conductor surface electromigration: A first-principles study in the low-bias ballistic limit Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.235421  0.35
2012 Bevan KH, Hossain MS. A non-parabolic single-band tight binding approach: Capturing conduction band bending, charge accumulation and quantization at non-polar InN surfaces Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/10/105029  0.403
2011 Bevan KH, Zhu W, Guo H, Zhang Z. Terminating surface electromigration at the source. Physical Review Letters. 106: 156404. PMID 21568585 DOI: 10.1103/Physrevlett.106.156404  0.349
2011 Zhu W, Chen H, Bevan KH, Zhang Z. Formation of graphene p-n superlattices on Pb quantum wedged islands. Acs Nano. 5: 3707-13. PMID 21473606 DOI: 10.1021/Nn200052F  0.346
2010 Walsh MA, Walter SR, Bevan KH, Geiger FM, Hersam MC. Phenylacetylene one-dimensional nanostructures on the Si(100)-2 x 1:H surface. Journal of the American Chemical Society. 132: 3013-9. PMID 20151637 DOI: 10.1021/Ja909139N  0.417
2010 Bevan KH, Guo H, Williams ED, Zhang Z. First-principles quantum transport theory of the enhanced wind force driving electromigration on Ag(111) Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.235416  0.354
2009 Lin JC, Kellar JA, Kim JH, Yoder NL, Bevan KH, Nguyen ST, Hersam MC, Bedzyk MJ. Atomic-scale X-ray structural analysis of self-assembled monolayers on silicon European Physical Journal: Special Topics. 167: 33-39. DOI: 10.1140/Epjst/E2009-00933-8  0.364
2009 Bevan KH, Low T, Guo H. Real space first-principles derived semiempirical pseudopotentials applied to tunneling magnetoresistance Journal of Applied Physics. 105. DOI: 10.1063/1.3123204  0.407
2009 Kellar JA, Lin JC, Kim JH, Yoder NL, Bevan KH, Stokes GY, Geiger FM, Nguyen ST, Bedzyk MJ, Hersam MC. Probing surface-adlayer conjugation on organic-modified Si(111) surfaces with microscopy, scattering, spectroscopy, and density functional theory Journal of Physical Chemistry C. 113: 2919-2927. DOI: 10.1021/Jp8100249  0.372
2008 Bevan KH, Kienle D, Guo H, Datta S. First-principles nonequilibrium analysis of STM-induced molecular negative-differential resistance on Si(100) Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.035303  0.578
2008 Raza H, Bevan KH, Kienle D. Incoherent transport through molecules on silicon in the vicinity of a dangling bond Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.035432  0.58
2007 Pandey D, Zemlyanov DY, Bevan K, Reifenberger RG, Dirk SM, Howell SW, Wheeler DR. UHV STM I(V) and XPS studies of aryl diazonium molecules assembled on Si(111). Langmuir : the Acs Journal of Surfaces and Colloids. 23: 4700-8. PMID 17391051 DOI: 10.1021/La063235I  0.405
2007 Bevan KH, Zahid F, Kienle D, Guo H. First-principles analysis of the STM image heights of styrene on Si(100) Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.045325  0.635
2006 Kienle D, Bevan KH, Liang GC, Siddiqui L, Cerda JI, Ghosh AW. Extended Hückel theory for band structure, chemistry, and transport. II. Silicon Journal of Applied Physics. 100. DOI: 10.1063/1.2259820  0.615
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