| Year |
Citation |
Score |
| 2016 |
Tian B, Wang Z, Pantouvaki M, Absil P, Van Campenhout J, Merckling C, Van Thourhout D. Room Temperature O-band DFB Laser Array Directly Grown on (001) Silicon. Nano Letters. PMID 27997215 DOI: 10.1021/acs.nanolett.6b04690 |
0.318 |
|
| 2016 |
Chen H, Verheyen P, De Heyn P, Lepage G, De Coster J, Balakrishnan S, Absil P, Yao W, Shen L, Roelkens G, Van Campenhout J. -1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond Optics Express. 24: 4622-4631. DOI: 10.1364/OE.24.004622 |
0.365 |
|
| 2016 |
Srinivasan SA, Pantouvaki M, Gupta S, Chen HT, Verheyen P, Lepage G, Roelkens G, Saraswat K, Van Thourhout D, Absil P, Campenhout JV. 56 Gb/s Germanium Waveguide Electro-Absorption Modulator Journal of Lightwave Technology. 34: 419-424. DOI: 10.1109/JLT.2015.2478601 |
0.308 |
|
| 2016 |
Agarwal S, Ingels M, Rakowski M, Pantouvaki M, Steyaert M, Absil P, Van Campenhout J. Wavelength locking of a Si ring modulator using an integrated drop-port OMA monitoring circuit 2015 Ieee Asian Solid-State Circuits Conference, a-Sscc 2015 - Proceedings. DOI: 10.1109/ASSCC.2015.7387457 |
0.354 |
|
| 2015 |
Absil PP, Verheyen P, De Heyn P, Pantouvaki M, Lepage G, De Coster J, Van Campenhout J. Silicon photonics integrated circuits: a manufacturing platform for high density, low power optical I/O's. Optics Express. 23: 9369-78. PMID 25968767 DOI: 10.1364/OE.23.009369 |
0.31 |
|
| 2015 |
Chen HT, Verbist J, Verheyen P, De Heyn P, Lepage G, De Coster J, Absil P, Yin X, Bauwelinck J, Van Campenhout J, Roelkens G. High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector. Optics Express. 23: 815-22. PMID 25835841 DOI: 10.1364/OE.23.000815 |
0.315 |
|
| 2015 |
Van Thourhout D, Wang Z, Tian B, Hu Y, George JP, Beeckman J, Pantouvaki M, Merckling C, Asselberghs I, Brems S, Absil P, Min-Hsiang H, Van Campenhout J. New materials and devices for optical interconnect 2015 Opto-Electronics and Communications Conference, Oecc 2015. DOI: 10.1109/OECC.2015.7340154 |
0.385 |
|
| 2015 |
Chen HT, Verbist J, Verheyen P, De Heyn P, Lepage G, De Coster J, Absil P, Moeneclaey B, Yin X, Bauwelinck J, Van Campenhout J, Roelkens G. 25-Gb/s 1310-nm optical receiver based on a sub-5-V waveguide-coupled germanium avalanche photodiode Ieee Photonics Journal. 7. DOI: 10.1109/JPHOT.2015.2460116 |
0.405 |
|
| 2015 |
Kopp VI, Park J, Wlodawski M, Hubner E, Singer J, Neugroschl D, Genack AZ, Dumon P, Van Campenhout J, Absil P. Two-Dimensional, 37-Channel, High-Bandwidth, Ultra-Dense Silicon Photonics Optical Interface Journal of Lightwave Technology. 33: 653-656. DOI: 10.1109/Jlt.2014.2364579 |
0.449 |
|
| 2015 |
Rakowski M, Pantouvaki M, De Heyn P, Verheyen P, Ingels M, Chen H, De Coster J, Lepage G, Snyder B, De Meyer K, Steyaert M, Pavarelli N, Lee JS, O'Brien P, Absil P, et al. A 4×20Gb/s WDM ring-based hybrid CMOS silicon photonics transceiver Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 58: 408-409. DOI: 10.1109/ISSCC.2015.7063099 |
0.333 |
|
| 2015 |
Pantouvaki M, Verheyen P, De Coster J, Lepage G, Absil P, Van Campenhout J. 56Gb/s ring modulator on a 300mm silicon photonics platform European Conference On Optical Communication, Ecoc. 2015. DOI: 10.1109/ECOC.2015.7341888 |
0.307 |
|
| 2014 |
Yu H, Pantouvaki M, Verheyen P, Lepage G, Absil P, Bogaerts W, Van Campenhout J. Silicon dual-ring modulator driven by differential signal. Optics Letters. 39: 6379-82. PMID 25490473 DOI: 10.1364/OL.39.006379 |
0.354 |
|
| 2014 |
Yu H, Ying D, Pantouvaki M, Van Campenhout J, Absil P, Hao Y, Yang J, Jiang X. Trade-off between optical modulation amplitude and modulation bandwidth of silicon micro-ring modulators. Optics Express. 22: 15178-89. PMID 24977610 DOI: 10.1364/OE.22.015178 |
0.328 |
|
| 2014 |
Masood A, Pantouvaki M, Goossens D, Lepage G, Verheyen P, Van Campenhout J, Absil P, Van Thourhout D, Bogaerts W. Fabrication and characterization of CMOS-compatible integrated tungsten heaters for thermo-optic tuning in silicon photonics devices Optical Materials Express. 4: 1383-1388. DOI: 10.1364/OME.4.001383 |
0.411 |
|
| 2014 |
Pathak S, Vanslembrouck M, Dumon P, Van Thourhout D, Verheyen P, Lepage G, Absil P, Bogaerts W. Effect of mask discretization on performance of silicon arrayed waveguide gratings Ieee Photonics Technology Letters. 26: 718-721. DOI: 10.1109/LPT.2014.2303793 |
0.337 |
|
| 2014 |
Korn D, Jazbinsek M, Palmer R, Baier M, Alloatti L, Yu H, Bogaerts W, Lepage G, Verheyen P, Absil P, Guenter P, Koos C, Freude W, Leuthold J. Electro-Optic Organic Crystal Silicon High-Speed Modulator Ieee Photonics Journal. 6. DOI: 10.1109/Jphot.2014.2314113 |
0.372 |
|
| 2013 |
Wang Z, Tian B, Paladugu M, Pantouvaki M, Le Thomas N, Merckling C, Guo W, Dekoster J, Van Campenhout J, Absil P, Van Thourhout D. Polytypic InP nanolaser monolithically integrated on (001) silicon. Nano Letters. 13: 5063-9. PMID 24073748 DOI: 10.1021/nl402145r |
0.305 |
|
| 2013 |
Korn D, Palmer R, Yu H, Schindler PC, Alloatti L, Baier M, Schmogrow R, Bogaerts W, Selvaraja SK, Lepage G, Pantouvaki M, Wouters JM, Verheyen P, Van Campenhout J, Chen B, ... ... Absil P, et al. Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s. Optics Express. 21: 13219-27. PMID 23736576 DOI: 10.1364/Oe.21.013219 |
0.353 |
|
| 2013 |
Yu H, Pantouvaki M, Dwivedi S, Verheyen P, Lepage G, Baets R, Bogaerts W, Absil P, Van Campenhout J. Compact thermally tunable silicon racetrack modulators based on an asymmetric waveguide Ieee Photonics Technology Letters. 25: 159-162. DOI: 10.1109/LPT.2012.2230619 |
0.32 |
|
| 2013 |
De Heyn P, De Coster J, Verheyen P, Lepage G, Pantouvaki M, Absil P, Bogaerts W, Van Campenhout J, Van Thourhout D. Fabrication-tolerant four-channel wavelength-division-multiplexing filter based on collectively tuned si microrings Journal of Lightwave Technology. 31: 3085-3092. DOI: 10.1109/JLT.2013.2273391 |
0.301 |
|
| 2012 |
Yu H, Korn D, Pantouvaki M, Van Campenhout J, Komorowska K, Verheyen P, Lepage G, Absil P, Hillerkuss D, Alloatti L, Leuthold J, Baets R, Bogaerts W. Using carrier-depletion silicon modulators for optical power monitoring. Optics Letters. 37: 4681-3. PMID 23164878 DOI: 10.1364/Ol.37.004681 |
0.313 |
|
| 2012 |
Yu H, Pantouvaki M, Van Campenhout J, Komorowska K, Dumon P, Verheyen P, Lepage G, Absil P, Korn D, Hillerkuss D, Leuthold J, Baets R, Bogaerts W. Silicon carrier-depletion-based Mach-Zehnder and ring modulators with different doping patterns for telecommunication and optical interconnect International Conference On Transparent Optical Networks. DOI: 10.1109/ICTON.2012.6254461 |
0.378 |
|
| 2012 |
Masood A, Pantouvaki M, Goossens D, Lepage G, Verheyen P, Van Thourhout D, Absil P, Bogaerts W. CMOS-compatible Tungsten heaters for silicon photonic waveguides Ieee International Conference On Group Iv Photonics Gfp. 234-236. DOI: 10.1109/GROUP4.2012.6324144 |
0.383 |
|
| 2012 |
Rakowski M, Ryckaert J, Pantouvaki M, Yu H, Bogaerts W, De Meyer K, Steyaert M, Absil PP, Van Campenhout J. Low-Power, 10-Gbps 1.5-Vpp differential CMOS driver for a silicon electro-optic ring modulator Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2012.6330643 |
0.381 |
|
| 2011 |
Bogaerts W, Absil P, Van Thourhout D, Van Campenhout J, Selvaraja SK, Dumon P, Yu H, Masood A, Roelkens G, Baets R. Optical Interconnect Technologies based on Silicon Photonics Mrs Proceedings. 1335. DOI: 10.1557/opl.2011.1267 |
0.409 |
|
| 2004 |
Little BE, Chu ST, Absil PP, Hryniewicz JV, Johnson FG, Seiferth F, Gill D, Van V, King O, Trakalo M. Very high-order microring resonator filters the WDM applications Ieee Photonics Technology Letters. 16: 2263-2265. DOI: 10.1109/Lpt.2004.834525 |
0.361 |
|
| 2004 |
Absil PP, Chu ST, Gill D, Hrynievricz JV, Johnson F, King O, Little BE, Seiferth F, Van V. Very high order integrated optical filters Conference On Optical Fiber Communication, Technical Digest Series. 1: 506-508. |
0.31 |
|
| 2004 |
Chu ST, Little BE, Van V, Hryniewicz JV, Absil PP, Johnson FG, Gill D, King O, Seiferth F, Trakalo M, Shanton J. Compact full C-band tunable filters for 50 GHz channel spacing based on high order micro-ring resonators Conference On Optical Fiber Communication, Technical Digest Series. 2: 683-685. |
0.3 |
|
| 2002 |
Van Member V, Ibrahim TA, Absil PP, Johnson FG, Grover R, Ho PT. Optical signal processing using nonlinear semiconductor microring resonators Ieee Journal On Selected Topics in Quantum Electronics. 8: 705-713. DOI: 10.1109/Jstqe.2002.1016376 |
0.623 |
|
| 2002 |
Grover R, Van V, Ibrahim TA, Absil PP, Calhoun LC, Johnson FG, Hryniewicz JV, Ho PT. Parallel-cascaded semiconductor microring resonators for high-order and wide-FSR filters Journal of Lightwave Technology. 20: 900-905. DOI: 10.1109/Jlt.2002.1007947 |
0.62 |
|
| 2002 |
Van V, Ibrahim TA, Ritter K, Absil PP, Johnson FG, Grover R, Goldhar J, Ho PT. All-optical nonlinear switching in GaAs-AlGaAs microring resonators Ieee Photonics Technology Letters. 14: 74-76. DOI: 10.1109/68.974166 |
0.624 |
|
| 2001 |
Grover R, Absil PP, Van V, Hryniewicz JV, Little BE, King O, Calhoun LC, Johnson FG, Ho PT. Vertically coupled GaInAsP--InP microring resonators. Optics Letters. 26: 506-8. PMID 18040367 DOI: 10.1364/Ol.26.000506 |
0.597 |
|
| 2001 |
Absil PP, Hryniewicz JV, Little BE, Johnson FG, Ritter KJ, Ho PT. Vertically coupled microring resonators using polymer wafer bonding Ieee Photonics Technology Letters. 13: 49-51. DOI: 10.1109/68.903217 |
0.469 |
|
| 2001 |
Van V, Absil PP, Hryniewicz JV, Ho PT. Propagation loss in single-mode GaAs-AlGaAs microring resonators: Measurement and model Journal of Lightwave Technology. 19: 1734-1739. DOI: 10.1109/50.964074 |
0.323 |
|
| 2001 |
Van V, Absil PP, Hryniewicz JV, Ho PT. Measurement and modeling of propagation loss in semiconductor racetrack microresonators Conference On Lasers and Electro-Optics Europe - Technical Digest. 263-264. |
0.343 |
|
| 2001 |
Absil PP, Hryniewicz JV, Little BE, Johnson FG, Ho PT. Wavelength selective mirror using notched microring resonators Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 511-512. |
0.468 |
|
| 2001 |
Grover R, Absil PP, Van V, Hryniewicz JV, Little BE, King O, Johnson FG, Calhoun LC, Ho PT. Vertically coupled GaAs-AlGaAs and GaInAsP-InP microring resonators Conference On Optical Fiber Communication, Technical Digest Series. 54. |
0.442 |
|
| 2001 |
Ibrahim TA, Van V, Ritter K, Absil PP, Johnson FG, Grover R, Goldhar J, Ho PT. Fast nonlinear all-optical switching in a compact semiconductor microring resonator Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 519-520. |
0.633 |
|
| 2001 |
Grover R, Van V, Ibrahim T, Absil PP, Calhoun LC, Johnson FG, Hryniewicz JV, Ho PT. Periodically-coupled GaAs-AlGaAs and GaInAsP-InP microring resonators with high-order, wide-FSR response Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 515-516. |
0.458 |
|
| 2001 |
Grover R, Absil PP, Van V, Hryniewicz JV, Little BE, King O, Calhoun LC, Johnson FG, Ho PT. Vertically coupled GaInAsP-InP microring resonators Optics Letters. 26: 506-508. |
0.575 |
|
| 2000 |
Absil PP, Hryniewicz JV, Little BE, Cho PS, Wilson RA, Joneckis LG, Ho PT. Wavelength conversion in GaAs micro-ring resonators. Optics Letters. 25: 554-6. PMID 18064109 |
0.62 |
|
| 2000 |
Absil PP, Hryniewicz JV, Little BE, Wilson RA, Joneckis LG, Ho PT. Compact microring notch filters Ieee Photonics Technology Letters. 12: 398-400. DOI: 10.1109/68.839031 |
0.344 |
|
| 2000 |
Little BE, Chu ST, Hryniewicz JV, Absil PP. Filter synthesis for periodically coupled microring resonators Optics Letters. 25: 344-346. |
0.396 |
|
| 2000 |
Absil PP, Hryniewicz JV, Little BF, Cho PS, Wilson RA, Joneckis LG. Enhancement of nonlinear effects in GaAs/AlGaAs microring resonators Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 224-225. |
0.497 |
|
| 2000 |
Hryniewicz JV, Absil PP, Little BE, Wilson RA, Joneckis LG, Ho PT. Microring resonator notch filters Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 595-596. |
0.383 |
|
| Low-probability matches (unlikely to be authored by this person) |
| 2017 |
Hsu MM, Marinelli A, Merckling C, Pantouvaki M, Van Campenhout J, Absil P, Van Thourhout D. Orientation-dependent electro-optical response of BaTiO_3 on SrTiO_3-buffered Si(001) studied via spectroscopic ellipsometry Optical Materials Express. 7: 2030. DOI: 10.1364/OME.7.002030 |
0.298 |
|
| 2010 |
Vermeulen D, Selvaraja S, Verheyen P, Lepage G, Bogaerts W, Absil P, Van Thourhout D, Roelkens G. High-efficiency fiber-to-chip grating couplers realized using an advanced CMOS-compatible silicon-on-insulator platform. Optics Express. 18: 18278-83. PMID 20721220 DOI: 10.1364/OE.18.018278 |
0.298 |
|
| 2015 |
Chen HT, Verbist J, Verheyen P, De Heyn P, Lepage G, De Coster J, Absil P, Yin X, Bauwelinck J, Van Campenhout J, Roelkens G. Low-voltage waveguide Ge APD based high sensitivity 10Gb/s Si photonic receiver European Conference On Optical Communication, Ecoc. 2015. DOI: 10.1109/ECOC.2015.7341913 |
0.291 |
|
| 2016 |
Pantouvaki M, Srinivasan SA, Ban Y, De Heyn P, Verheyen P, Lepage G, Chen H, De Coster J, Golshani N, Balakrishnan S, Absil P, Van Campenhout J. Active Components for 50Gb/s NRZ-OOK Optical Interconnects in a Silicon Photonics Platform Journal of Lightwave Technology. DOI: 10.1109/JLT.2016.2604839 |
0.291 |
|
| 2012 |
Yu H, Pantouvaki M, Van Campenhout J, Korn D, Komorowska K, Dumon P, Li Y, Verheyen P, Absil P, Alloatti L, Hillerkuss D, Leuthold J, Baets R, Bogaerts W. Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators. Optics Express. 20: 12926-38. PMID 22714320 DOI: 10.1364/Oe.20.012926 |
0.286 |
|
| 2019 |
Rahim A, Goyvaerts J, Szelag B, Fedeli J, Absil P, Aalto T, Harjanne M, Littlejohns C, Reed G, Winzer G, Lischke S, Zimmermann L, Knoll D, Geuzebroek D, Leinse A, et al. Open-Access Silicon Photonics Platforms in Europe Ieee Journal of Selected Topics in Quantum Electronics. 25: 1-18. DOI: 10.1109/JSTQE.2019.2915949 |
0.283 |
|
| 2018 |
Verbist J, Verplaetse M, Srinivasan SA, Van Kerrebrouck J, De Heyn P, Absil P, De Keulenaer T, Pierco R, Vyncke A, Torfs G, Yin X, Roelkens G, Van Campenhout J, Bauwelinck J. Real-Time 100 Gb/s NRZ and EDB Transmission With a GeSi Electroabsorption Modulator for Short-Reach Optical Interconnects Journal of Lightwave Technology. 36: 90-96. DOI: 10.1109/JLT.2017.2775630 |
0.283 |
|
| 2014 |
Absil PP, De Heyn P, Dumon P, Van Thourhout D, Verheyen P, Selvaraja S, Lepage G, Pantouvaki M, Rakowski M, Van Campenhout J. Advances in silicon photonics WDM devices Proceedings of Spie - the International Society For Optical Engineering. 9010. DOI: 10.1117/12.2047350 |
0.278 |
|
| 2013 |
Palmer R, Koeber S, Heni W, Elder DL, Korn D, Yu H, Alloatti L, Koenig S, Schindler PC, Bogaerts W, Pantouvaki M, Lepage G, Verheyen P, Van Campenhout J, Absil P, et al. High-speed silicon-organic hybrid (SOH) modulator with 1.6 fJ/bit and 180 pm/V in-device nonlinearity Iet Conference Publications. 2013: 510-512. DOI: 10.1049/cp.2013.1443 |
0.269 |
|
| 2015 |
Absil PP, De Heyn P, Chen H, Verheyen P, Lepage G, Pantouvaki M, De Coster J, Khanna A, Drissi Y, Van Thourhout D, Van Campenhout J. Imec iSiPP25G silicon photonics: A robust CMOS-based photonics technology platform Proceedings of Spie - the International Society For Optical Engineering. 9367. DOI: 10.1117/12.2076262 |
0.265 |
|
| 2015 |
Srinivasan SA, Pantouvaki M, Verheyen P, Lepaee G, Absil P, Van Campenhout J, Van Thouaout D. Carrier lifetime assessment in integrated Ge waveguide devices Ieee International Conference On Group Iv Photonics Gfp. 2015: 167-168. DOI: 10.1109/Group4.2015.7305916 |
0.263 |
|
| 2015 |
Van Thourhout D, Hu Y, Pantouvaki M, Alexander K, Kuyken B, Brems S, Asselberghs I, Huyghebaert C, Alessandri C, Absil P, Van Campenhout J. Hybrid graphene-silicon photonics devices European Conference On Optical Communication, Ecoc. 2015. DOI: 10.1109/ECOC.2015.7341887 |
0.259 |
|
| 2000 |
Hryniewicz JV, Absil PP, Little BE, Wilson RA, Ho PT. Higher order filter response in coupled microring resonators Ieee Photonics Technology Letters. 12: 320-322. DOI: 10.1109/68.826927 |
0.257 |
|
| 2006 |
Hoffmann T, Veloso A, Lauwers A, Yu H, Van Dal M, Tigelaar H, Chiarella T, Kerner C, Mitsuhashi R, Satoru I, Niwa M, Rothschild A, Froment B, Ramos J, Nackaerts A, ... ... Absil PP, et al. Low power CMOS featuring dual work function FUSI on HfSiON and 17ps inverter delay Digest of Technical Papers - Symposium On Vlsi Technology. 154-155. |
0.255 |
|
| 2012 |
Pantouvaki M, Yu H, Verheyen P, Lepage G, Bogaerts W, Moelants M, Wouters J, Radisic D, Vandervorst A, Absil P, Van Campenhout J. Lateral versus interdigitated diode design for 10 Gb/s low-voltage low-loss silicon ring modulators 2012 Optical Interconnects Conference, Oic 2012. 44-45. DOI: 10.1109/OIC.2012.6224455 |
0.254 |
|
| 2013 |
Pantouvaki M, Verheyen P, Lepage G, De Coster J, Yu H, De Heyn P, Absil P, Van Campenhout J. 20Gb/s silicon ring modulator co-integrated with a Ge monitor photodetector Iet Conference Publications. 2013: 507-509. DOI: 10.1049/cp.2013.1442 |
0.239 |
|
| 2014 |
Xie W, Fiers M, Selvaraja S, Bienstman P, Van Campenhout J, Absil P, Van Thourhout D. High-Q Photonic Crystal Nanocavities on 300 mm SOI Substrate Fabricated With 193 nm Immersion Lithography Journal of Lightwave Technology. 32: 1457-1462. DOI: 10.1109/JLT.2014.2308061 |
0.239 |
|
| 2006 |
Hoffmann T, Veloso A, Lauwers A, Yu H, Tigelaar H, Van Dal M, Chiarella T, Kerner C, Kauerauf T, Shickova A, Mitsuhashi R, Satoru I, Niwa M, Rothschild A, Froment B, ... ... Absil PP, et al. Ni-based FUSI gates: CMOS integration for 45nm node and beyond Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.346759 |
0.225 |
|
| 2011 |
Waldron N, Nguyen ND, Lin D, Brammertz G, Vincent B, Firrincieli A, Winderick G, Sioncke S, De Jaeger B, Wang G, Mitard J, Wang WE, Heyns M, Caymax M, Meuris M, ... Absil P, et al. Heterogeneous integration and fabrication of III-V MOS devices in a 200mm processing environment Ecs Transactions. 35: 299-309. DOI: 10.1149/1.3569922 |
0.22 |
|
| 2015 |
Sun X, Rouhi Najaf Abadi A, Guo W, Ben Ali K, Rack M, Roda Neve C, Choi M, Moroz V, De Wolf I, Raskin JP, Van Der Plas G, Beyne E, Absil P. Noise coupling between TSVs and active devices: Planar nMOSFETs vs. nFinFETs Proceedings - Electronic Components and Technology Conference. 2015: 260-265. DOI: 10.1109/ECTC.2015.7159602 |
0.22 |
|
| 2009 |
Ragnarsson LA, Li Z, Tseng J, Schram T, Rohr E, Cho MJ, Kauerauf T, Conard T, Okuno Y, Parvais B, Absil P, Biesemans S, Hoffmann TY. Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2009.5424254 |
0.218 |
|
| 2014 |
Chen HT, Verheyen P, Rakowski M, De Heyn P, Lepage G, De Coster J, Absil P, Roelkens G, Van Campenhout J. Low-voltage Ge avalanche photodetector for highly sensitive 10Gb/s Si photonics receivers Ieee International Conference On Group Iv Photonics Gfp. 106-107. DOI: 10.1109/Group4.2014.6961949 |
0.215 |
|
| 2017 |
Chen H, Galili M, Verheyen P, De Heyn P, Lepage G, De Coster J, Balakrishnan S, Absil P, Oxenlowe L, Van Campenhout J, Roelkens G. 100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors Journal of Lightwave Technology. 35: 722-726. DOI: 10.1109/JLT.2016.2593942 |
0.215 |
|
| 2009 |
Ragnarsson LA, Schram T, Röhr E, Sebaai F, Kelkar P, Wada M, Kauerauf T, Aoulaiche M, Cho MJ, Kubicek S, Lauwers A, Hoffmann TY, Absil PP, Biesemans S. Single-metal dual-dielectric (SMDD) gate-first CMOS integration towards low VT and high performance International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. 49-50. DOI: 10.1109/VTSA.2009.5159287 |
0.215 |
|
| 2011 |
Veloso A, De Keersgieter A, Brus S, Horiguchi N, Absil PP, Hoffmann T. Multi-gate fin field-effect transistors junctions optimization by conventional ion implantation for (Sub-)22nm technology nodes circuit applications Japanese Journal of Applied Physics. 50. DOI: 10.1143/JJAP.50.04DC16 |
0.214 |
|
| 2018 |
Martin A, Verheyen P, De Heyn P, Absil P, Feneyrou P, Bourderionnet J, Dodane D, Leviandier L, Dolfi D, Naughton A, O'Brien P, Spuessens T, Baets R, Lepage G. Photonic Integrated Circuit-Based FMCW Coherent LiDAR Journal of Lightwave Technology. 36: 4640-4645. DOI: 10.1109/JLT.2018.2840223 |
0.213 |
|
| 2010 |
Eneman G, Yamaguchi S, Ortolland C, Takeoka S, Witters L, Chiarella T, Favia P, Hikavyy A, Mitard J, Kobayashi M, Krom R, Bender H, Tseng J, Wang WE, Vandervorst W, ... ... Absil PP, et al. High-mobility Si1-xGex-channel PFETs: Layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths Digest of Technical Papers - Symposium On Vlsi Technology. 41-42. DOI: 10.1109/VLSIT.2010.5556128 |
0.212 |
|
| 2013 |
Wang Z, Tian B, Paladugu M, Pantouvaki M, Merckling C, Guo W, Dekoster J, Caymax M, Van Campenhout J, Absil P, Van Thourhout D. An ultra-short InP nanowire laser monolithic integrated on (001) silicon substrate 2013 Ieee Photonics Society Summer Topical Meeting Series, Psstms 2013. 23-24. DOI: 10.1109/PHOSST.2013.6614448 |
0.212 |
|
| 2011 |
Veloso A, Ragnarsson LA, Cho MJ, Devriendt K, Kellens K, Sebaai F, Suhard S, Brus S, Crabbe Y, Schram T, Röhr E, Paraschiv V, Eneman G, Kauerauf T, Dehan M, ... ... Absil PP, et al. Gate-last vs. gate-first technology for aggressively scaled EOT logic/RF CMOS Digest of Technical Papers - Symposium On Vlsi Technology. 34-35. |
0.208 |
|
| 2015 |
Guo W, Choi M, Rouhi A, Moroz V, Eneman G, Mitard J, Witters L, Van Der Plas G, Collaert N, Beyer G, Absil P, Thean A, Beyne E. Impact of 3D integration on 7nm high mobility channel devices operating in the ballistic regime Technical Digest - International Electron Devices Meeting, Iedm. 2015: 7.1.1-7.1.4. DOI: 10.1109/IEDM.2014.7047001 |
0.204 |
|
| 2015 |
Xing Y, Ako T, George JP, Korn D, Yu H, Verheyen P, Pantouvaki M, Lepage G, Absil P, Ruocco A, Koos C, Leuthold J, Neyts K, Beeckman J, Bogaerts W. Digitally controlled phase shifter using an SOI slot waveguide with liquid crystal infiltration Ieee Photonics Technology Letters. 27: 1269-1272. DOI: 10.1109/Lpt.2015.2416438 |
0.203 |
|
| 2016 |
Hu Y, Pantouvaki M, Van Campenhout J, Brems S, Asselberghs I, Huyghebaert C, Absil P, Van Thourhout D. Broadband 10 Gb/s operation of graphene electro-absorption modulator on silicon Laser & Photonics Reviews. 10: 307-316. DOI: 10.1002/LPOR.201500250 |
0.202 |
|
| 2013 |
Pantouvaki M, Yu H, Rakowski M, Christie P, Verheyen P, Lepage G, Van Hoovels N, Absil P, Van Campenhout J. Comparison of silicon ring modulators with interdigitated and lateral p-n junctions Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/JSTQE.2012.2228169 |
0.2 |
|
| 2013 |
Masood A, Pantouvaki M, Lepage G, Verheyen P, Van Campenhout J, Absil P, Van Thourhout D, Bogaerts W. Comparison of heater architectures for thermal control of silicon photonic circuits Ieee International Conference On Group Iv Photonics Gfp. 83-84. DOI: 10.1109/Group4.2013.6644437 |
0.2 |
|
| 2007 |
Chang VS, Ragnarsson LA, Pourtois G, O'Connor R, Adelmann C, Van Elshocht S, Delabie A, Swerts J, Van Der Heyden N, Conard T, Cho HJ, Akheyar A, Mitsuhashi R, Witters T, O'Sullivan BJ, ... ... Absil PP, et al. A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single- dielectric gate stack Technical Digest - International Electron Devices Meeting, Iedm. 535-538. DOI: 10.1109/IEDM.2007.4418993 |
0.195 |
|
| 2012 |
Korn D, Alloatti L, Lauermann M, Pfeifle J, Palmer R, Schindler PC, Freude W, Koos C, Leuthold J, Yu H, Bogaerts W, Komorowska K, Baets R, Van Campenhout J, Verheyen P, ... ... Absil P, et al. Silicon-organic hybrid fabrication platform for integrated circuits International Conference On Transparent Optical Networks. DOI: 10.1109/ICTON.2012.6254470 |
0.194 |
|
| 2012 |
Sebaai F, Veloso A, Claes M, Devriendt K, Brus S, Absil P, Mertens P, De Gendt S. Poly-silicon wet removal for replacement gate integration scheme: Impact of process parameters on the removal rate Solid State Phenomena. 187: 53-56. DOI: 10.4028/www.scientific.net/SSP.187.53 |
0.193 |
|
| 2016 |
Khanna A, Bode D, Das C, Absil P, Beckers S. CMOS cost–volume paradigm and silicon photonics production Topics in Applied Physics. 122: 261-276. DOI: 10.1007/978-3-642-10503-6_9 |
0.192 |
|
| 2012 |
Vermeulen D, Selvaraja S, Verheyen P, Absil P, Bogaerts W, Van Thourhout D, Roelkens G. Silicon-on-insulator polarization rotator based on a symmetry breaking silicon overlay Ieee Photonics Technology Letters. 24: 482-484. DOI: 10.1109/LPT.2011.2181944 |
0.192 |
|
| 2001 |
Goldner LS, Hwang J, Bryant GW, Fasolka MJ, Absil PP, Hryniewicz JV, Johnson FG, Shen H, Ho PT. Newton's rings in near-field optics Applied Physics Letters. 78: 583-585. DOI: 10.1063/1.1343850 |
0.189 |
|
| 2006 |
Loo R, Walczyk C, Verheyen P, Rooyackers R, Leys FE, Eneman G, Shamiryan D, Absil PP, Delande T, Moussa A, Bender H, Drijbooms C, Geenen L, Caymax M, Weijtmans JW, et al. Selective epitaxy of Si/SiGe to improve pMOS devices by recessed source/drain and/or buried SiGe channels Ecs Transactions. 3: 453-465. DOI: 10.1149/1.2355843 |
0.189 |
|
| 2009 |
Ortolland C, Ragnarsson LA, Favia P, Richard O, Kerner C, Chiarella T, Rosseel E, Okuno Y, Akheyar A, Tseng J, Everaert JL, Schram T, Kubicek S, Aoulaiche M, Cho MJ, ... Absil PP, et al. Optimized ultra-low thermal budget process flow for advanced high-K / metal gate first CMOS using laser-annealing technology Digest of Technical Papers - Symposium On Vlsi Technology. 38-39. |
0.187 |
|
| 2013 |
Palmer R, Alloatti L, Korn D, Schindler PC, Schmogrow R, Heni W, Koenig S, Bolten J, Wahlbrink T, Waldow M, Yu H, Bogaerts W, Verheyen P, Lepage G, Pantouvaki M, ... ... Absil P, et al. Silicon-organic hybrid MZI modulator generating OOK, BPSK and 8-ASK signals for up to 84 Gbit/s Ieee Photonics Journal. 5. DOI: 10.1109/Jphot.2013.2258142 |
0.184 |
|
| 2007 |
Hoffmann T, Noda T, Felch S, Severi S, Parihar V, Forstner H, Vrancken C, De Potter M, Van Daele B, Bender H, Niwa M, Schreutelkamp R, Vandervorst W, Biesemans S, Absil PP. Laser annealed junctions: Process integration sequence optimization for advanced CMOS technologies Extended Abstracts of the 7th International Workshop On Junction Technology, Iwjt 2007. 137-140. DOI: 10.1109/IWJT.2007.4279968 |
0.18 |
|
| 2006 |
Loo R, Verheyen P, Eneman G, Rooyackers R, Leys F, Shamiryan D, Meyer KD, Absil PP, Caymax M. Characteristics of selective epitaxial SiGe deposition processes for recessed source/drain applications Thin Solid Films. 508: 266-269. DOI: 10.1016/j.tsf.2005.06.108 |
0.18 |
|
| 2007 |
Kittl JA, Lauwers A, Pawlak MA, Veloso A, Yu HY, Chang SZ, Hoffmann T, Pourtois G, Brus S, Demeurisse C, Vrancken C, Absil PP, Biesemans S. Modulation of the effective work function of fully-silicided (FUSI) gate stacks Microelectronic Engineering. 84: 1857-1860. DOI: 10.1016/J.Mee.2007.04.002 |
0.178 |
|
| 2008 |
Veloso A, Yu H, Lauwers A, Chang S, Adelmann C, Onsia B, Demand M, Brus S, Vrancken C, Singanamalla R, Lehnen P, Kittl J, Kauerauf T, Vos R, O′Sullivan B, ... ... Absil P, et al. Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack Solid-State Electronics. 52: 1303-1311. DOI: 10.1016/j.sse.2008.04.011 |
0.177 |
|
| 2011 |
Ragnarsson LA, Chiarella T, Togo M, Schram T, Absil P, Hoffmann T. Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited) Microelectronic Engineering. 88: 1317-1322. DOI: 10.1016/j.mee.2011.03.121 |
0.177 |
|
| 2008 |
Veloso A, Demuynck S, Ercken M, Goethals AM, Demand M, De Marneffe JF, Altamirano E, De Keersgieter A, Delvaux C, De Backer J, Brus S, Hermans J, Baudemprez B, Van Roey F, Lorusso GF, ... ... Absil P, et al. Full-field EUV and immersion lithography integration in 0.186um2 finFET 6T-SRAM cell Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796834 |
0.177 |
|
| 2009 |
Ortolland C, Rosseel E, Horiguchi N, Kerner C, Mertens S, Kittl J, Verleysen E, Bender H, Vandervost W, Lauwers A, Absil PP, Biesemans S, Muthukrishnan S, Srinivasan S, Mayur AJ, et al. Silicide yield improvement with NiPtSi formation by laser anneal for advanced low power platform CMOS technology Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2009.5424428 |
0.174 |
|
| 2015 |
Chen HT, Verheyen P, De Heyn P, Lepage G, De Coster J, Absil P, Roelkens G, Van Campenhout J. High-responsivity low-voltage 28-Gb/s Ge p-i-n photodetector with silicon contacts Journal of Lightwave Technology. 33: 820-824. DOI: 10.1109/JLT.2014.2367134 |
0.171 |
|
| 2012 |
Verheyen P, Lepage G, Van Campenhout J, Pantouvaki M, Absil P, De Heyn P, Bogaerts W, Dumon P, Selvaraja S. Co-integration of Ge detectors and Si modulators in an advanced Si photonics platform Proceedings of Spie - the International Society For Optical Engineering. 8431. DOI: 10.1117/12.921747 |
0.167 |
|
| 2009 |
Veloso A, Demuynck S, Ercken M, Goethals AM, Locorotondo S, Lazzarino F, Altamirano E, Huffman C, De Keersgieter A, Brus S, Dem M, Struyf H, De Backer J, Hermans J, Delvaux C, ... ... Absil P, et al. Demonstration of scaled 0.099μ2 FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2009.5424365 |
0.166 |
|
| 2016 |
Karmarkar AP, Guo W, Xu X, Van Der Plas G, Van Huylenbroeck S, Gonzalez M, Absil P, El Sayed K, Beyne E. Performance and Reliability Impact of Copper Plasticity in Backside TSV-Last Fabrication Process Ieee Transactions On Device and Materials Reliability. 16: 402-412. DOI: 10.1109/TDMR.2016.2596838 |
0.165 |
|
| 2007 |
Shickova A, Kaczer B, Simoen E, Verheyen P, Eneman G, Jurczak M, Absil P, Maes H, Groeseneken G. Dielectric quality and reliability of FUSI/HfSiON devices with process induced strain Microelectronic Engineering. 84: 1906-1909. DOI: 10.1016/J.Mee.2007.04.110 |
0.164 |
|
| 2011 |
Mitard J, De Jaeger B, Eneman G, Dobbie A, Myronov M, Kobayashi M, Geypen J, Bender H, Vincent B, Krom R, Franco J, Winderickx G, Vrancken E, Vanherle W, Wang WE, ... ... Absil PP, et al. High hole mobility in 65nm strained Ge p-channel field effect transistors with Hfo2 gate dielectric Japanese Journal of Applied Physics. 50. DOI: 10.1143/JJAP.50.04DC17 |
0.164 |
|
| 2007 |
Yu HY, Li MF, Lauwers A, Kittl JA, Singanamalla R, Veloso A, Hoffmann T, De Meyer K, Jurczak M, Absil P, Biesemans S. Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices Icsict-2006: 2006 8th International Conference On Solid-State and Integrated Circuit Technology, Proceedings. 404-407. DOI: 10.1109/ICSICT.2006.306263 |
0.163 |
|
| 2007 |
Kittl JA, Lauwers A, Demeurisse C, Vrancken C, Kubicek S, Absil P, Biesemans S. Direct evidence of linewidth effect: Ni31Si12 and Ni3Si formation on 25nm Ni fully silicided gates Applied Physics Letters. 90: 172107. DOI: 10.1063/1.2732820 |
0.159 |
|
| 2009 |
Ortolland C, Ragnarsson LA, Kerner C, Chiarella T, Rosseel E, Okuno Y, Favia P, Richard O, Everaert JL, Schram T, Kubicek S, Absil PP, Biesemans S, Schreutelkamp R, Hoffmann T. Junction anneal sequence optimization for advanced high-k / metal gate CMOS technology Extended Abstracts of the 9th International Workshop On Junction Technology, Iwjt 2009. 54-57. DOI: 10.1109/IWJT.2009.5166219 |
0.159 |
|
| 2006 |
Pawlak B, Duffy R, Augendre E, Severi S, Janssens T, Absil P, Vandervorst W, Collart E, Felch S, Schreutelkamp R, Cowern N. The Carbon Co-implant with Spike RTA Solution for Phosphorus Extension Mrs Proceedings. 912. DOI: 10.1557/PROC-0912-C01-06 |
0.156 |
|
| 2016 |
Chasin A, Scholz M, Guo W, Franco J, Potoms G, Jourdain A, Linten D, Van Der Plas G, Absil P, Beyne E. Impact of wafer thinning on front-end reliability for 3D integration Ieee International Reliability Physics Symposium Proceedings. 2016: 6B21-6B26. DOI: 10.1109/IRPS.2016.7574562 |
0.154 |
|
| 2007 |
Cho HJ, Yu HY, Ragnarsson LA, Chang VS, Schram T, O'Sullivan BJ, Kubicek S, Mitsuhashi R, Akheyar A, Van Elshocht S, Witters T, Delabie A, Adelmann C, Röhr E, Singanamalla R, ... ... Absil PP, et al. Nitrogen profile and dielectric cap layer (Al2O3, Dy2O3, La2O3) engineering on Hf-silicate Proceedings 2007 Ieee International Conference On Integrated Circuit Design and Technology, Icicdt. 114-116. DOI: 10.1109/ICICDT.2007.4299552 |
0.152 |
|
| 2013 |
Korn D, Palmer R, Yu H, Schindler PC, Alloatti L, Baier M, Schmogrow R, Bogaerts W, Selvaraja S, Lepage G, Pantouvaki M, Wouters J, Verheyen P, Van Campenhout J, Absil P, et al. Silicon-organic hybrid (SOH) IQ modulator for 16QAM at 112 Gbit/s Optics Infobase Conference Papers. DOI: 10.1109/CLEOE-IQEC.2013.6801453 |
0.152 |
|
| 2010 |
Hellings G, Witters L, Krom R, Mitard J, Hikavyy A, Loo R, Schulze A, Eneman G, Kerner C, Franco J, Chiarella T, Takeoka S, Tseng J, Wang WE, Vandervorst W, ... Absil P, et al. Implant-free SiGe quantum well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel Technical Digest - International Electron Devices Meeting, Iedm. 10.4.1-10.4.4. DOI: 10.1109/IEDM.2010.5703335 |
0.151 |
|
| 2010 |
Horiguchi N, Demuynck S, Ercken M, Locorotondo S, Lazzarino F, Altamirano E, Huffman C, Brus S, Demand M, Struyf H, De Backer J, Hermans J, Delvaux C, Vandeweyer T, Baerts C, ... ... Absil P, et al. High yield sub-0.1μm2 6T-SRAM cells, featuring high-k/metal-gate finfet devices, double gate patterning, a novel fin etch strategy, full-field EUV lithography and optimized junction design & layout Digest of Technical Papers - Symposium On Vlsi Technology. 23-24. DOI: 10.1109/VLSIT.2010.5556133 |
0.149 |
|
| 2006 |
Kubicek S, De Marneffe JF, Vrancken C, Chiarella T, Kerner C, Mertens S, Eyckens B, Delabie A, Veloso A, Hoffman T, Lauwers A, Kittl JA, Jurczak M, Biesemans S, Absil PP. A novel CMP-less integration scheme for dual work function Ni-FUSI CMOS Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.347006 |
0.149 |
|
| 2007 |
Shickova A, Kauerauf T, Rotlischild A, Aoulaiche M, Sahhaf S, Kaczer B, Veloso A, Torregiani C, Pantisano L, Lauwers A, Zahid M, Rost T, Tigelaar H, Pas M, Fretwell J, ... ... Absil PP, et al. Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS Digest of Technical Papers - Symposium On Vlsi Technology. 158-159. DOI: 10.1109/VLSIT.2007.4339765 |
0.148 |
|
| 2019 |
Shickova AK, Verheyen P, Eneman G, San Andres E, Absil P, Kaczer B, Groeseneken G. NBTI Study on PMOS Devices with TiN/HfO2 Gate Stack and Process Induced Strain Ecs Transactions. 3: 253-261. DOI: 10.1149/1.2356285 |
0.147 |
|
| 2007 |
Yu HY, Singanamalla R, Ragnarsson LA, Chang VS, Cho HJ, Mitsuhashi R, Adelmann C, Van Elshocht S, Lehnen P, Chang SZ, Yin KM, Schram T, Kubicek S, De Gendt S, Absil P, et al. Demonstration of metal-gated low Vt n-MOSFETs using a poly-Si/ TaN/Dy2O3/SiON gate stack with a scaled EOT value Ieee Electron Device Letters. 28: 656-658. DOI: 10.1109/LED.2007.900308 |
0.143 |
|
| 2016 |
Chen H, Verheyen P, De Heyn P, Lepage G, De Coster J, Balakrishnan S, Absil P, Roelkens G, Van Campenhout J. Dark current analysis in high-speed germanium p-i-n waveguide photodetectors Journal of Applied Physics. 119. DOI: 10.1063/1.4953147 |
0.141 |
|
| 2011 |
Ortolland C, Togo M, Rosseel E, Mertens S, Kittl J, Absil PP, Lauwers A, Hoffmann T. New carbon-based thermal stability improvement technique for NiPtSi used in CMOS technology Microelectronic Engineering. 88: 578-582. DOI: 10.1016/j.mee.2010.07.008 |
0.136 |
|
| 2005 |
Eneman G, Verheyen P, Rooyackers R, Nouri F, Washington L, Degraeve R, Kaczer B, Moroz V, De Keersgieter A, Schreutelkamp R, Kawaguchi M, Kim Y, Samoilov A, Smith L, Absil PP, et al. Layout impact on the performance of a locally strained PMOSFET Digest of Technical Papers - Symposium On Vlsi Technology. 2005: 22-23. DOI: 10.1109/.2005.1469196 |
0.135 |
|
| 2014 |
Rakowski M, Ingels M, De Meyer K, Steyaert M, Absil P, Van Campenhout J. Highly sensitive, low-power, 10-20Gb/s transimpedance amplifier based on cascaded CMOS inverter gain stages 2014 Ieee Optical Interconnects Conference, Oi 2014. 115-116. DOI: 10.1109/OIC.2014.6886106 |
0.135 |
|
| 2015 |
Wang Z, Tian B, Pantouvaki M, Guo W, Absil P, Van Campenhout J, Merckling C, Van Thourhout D. Room-temperature InP distributed feedback laser array directly grown on silicon Nature Photonics. 9: 837-842. DOI: 10.1038/nphoton.2015.199 |
0.134 |
|
| 2010 |
Noda T, Vandervorst W, Vrancken C, Ortolland C, Rosseel E, Eyben P, Absil PP, Biesemans S, Hoffmann TY. Analysis of pocket profile deactivation and its impact on Vth variation for laser annealed device using an atomistic kinetic Monte Carlo approach Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2010.5703371 |
0.133 |
|
| 2006 |
Verheyen P, Severi S, Eneman G, Loo R, Shamiryan D, Rooyackers R, Demand M, Veloso A, Lauwers A, De Meyer K, Absil P, Jurczak M, Biesemans S. The combination of embedded Si1-xGe, S/D and metal gate options for high performance PMOS transistors Ecs Transactions. 3: 697-711. DOI: 10.1149/1.2355865 |
0.129 |
|
| 2006 |
Pawlak B, Augendre E, Severi S, Eyben P, Janssens T, Falepin A, Absil P, Vandervorst W, Felch S, Collart E, Schreutelkamp R, Cowern N. The Carbon Co-implant with Spike RTA Solution for Boron Extension Mrs Proceedings. 912. DOI: 10.1557/PROC-0912-C01-03 |
0.128 |
|
| 2006 |
Severi S, Augendre E, Falepin A, Kerner C, Ramos J, Eyben P, Vandervost W, Curatola C, Felch S, Nouri F, Kraus P, Parihar V, Noda T, Schreutelkamp R, Hoffmann TY, ... Absil P, et al. NMOS and PMOS metal gate transistors with junctions activated by laser annealing International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. 119-120. DOI: 10.1109/VTSA.2006.251093 |
0.118 |
|
| 2007 |
Veloso A, Yu HY, Chang SZ, Adelmann C, Onsia B, Brus S, Demand M, Lauwers A, O'Sullivan BJ, Singanamalla R, Pourtois G, Lehnen P, Van Elshocht S, De Meyer K, Jurczak M, ... Absil PP, et al. Achieving low-VT Ni-FUSI CMOS by ultra-thin Dy2 O3 capping of hafnium silicate dielectrics Ieee Electron Device Letters. 28: 980-983. DOI: 10.1109/LED.2007.908505 |
0.114 |
|
| 2015 |
Guo W, Karmarkar AP, Xu X, Van Der Plas G, Van Huylenbroeck S, Gonzalez M, Absil P, El Sayed K, Beyne E. Analysis of copper plasticity impact in TSV-middle and backside TSV-last fabrication processes Proceedings - Electronic Components and Technology Conference. 2015: 1038-1044. DOI: 10.1109/ECTC.2015.7159723 |
0.114 |
|
| 2010 |
Chiarella T, Witters L, Mercha A, Kerner C, Rakowski M, Ortolland C, Ragnarsson L, Parvais B, De Keersgieter A, Kubicek S, Redolfi A, Vrancken C, Brus S, Lauwers A, Absil P, et al. Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession Solid-State Electronics. 54: 855-860. DOI: 10.1016/j.sse.2010.04.010 |
0.112 |
|
| 2006 |
Yu HY, Kittl JA, Lauwers A, Singanamalla R, Demeurisse C, Kubicek S, Augendre E, Veloso A, Brus S, Vrancken C, Hoffmann T, Mertens S, Onsia B, Verbeeck R, Demand M, ... ... Absil PP, et al. Demonstration of a new approach towards 0.25V Low-Vt CMOS using Ni-based FUSI Digest of Technical Papers - Symposium On Vlsi Technology. 98-99. |
0.108 |
|
| 2010 |
Ortolland C, Sahhaf S, Srividya V, Degraeve R, Saino K, Kim CS, Gilbert M, Kauerauf T, Cho MJ, Dehan M, Schram T, Togo M, Horiguchi N, Groeseneken G, Biesemans S, ... Absil PP, et al. Ion-implantation-based low-cost Hk/MG process for CMOS low-power application Digest of Technical Papers - Symposium On Vlsi Technology. 185-186. DOI: 10.1109/VLSIT.2010.5556221 |
0.108 |
|
| 2009 |
Ortolland C, Mathew S, Duffy R, Saino K, Kim CS, Mertens S, Horiguchi N, Vrancken C, Chiarella T, Kerner C, Absil PP, Lauwers A, Biesemans S, Hoffmann T. Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications Proceedings of the 10th International Conference On Ultimate Integration of Silicon, Ulis 2009. 147-150. DOI: 10.1109/ULIS.2009.4897559 |
0.106 |
|
| 2006 |
Collart EJH, Felch SB, Pawlak BJ, Absil PP, Severi S, Janssens T, Vandervorst W. Co-implantation with conventional spike anneal solutions for 45 nm n -type metal-oxide-semiconductor ultra-shallow junction formation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 507-509. DOI: 10.1116/1.2151906 |
0.103 |
|
| 2014 |
Xing Y, Ako T, George JP, Korn D, Yu H, Verheyen P, Pantouvaki M, Lepage G, Absil P, Koos C, Leuthold J, Beeckman J, Bogaerts W. Direct digital control of an efficient silicon+liquid crystal phase shifter Ieee International Conference On Group Iv Photonics Gfp. 43-44. DOI: 10.1109/Group4.2014.6962029 |
0.1 |
|
| 2008 |
Schram T, Kubicek S, Rohr E, Brus S, Vrancken C, Chang SZ, Chang VS, Mitsuhashi R, Okuno Y, Akheyar A, Cho HJ, Hooker JC, Paraschiv V, Vos R, Sebai F, ... ... Absil PP, et al. Novel process to pattern selectively dual dielectric capping layers using soft-mask only Digest of Technical Papers - Symposium On Vlsi Technology. 44-45. DOI: 10.1109/VLSIT.2008.4588557 |
0.098 |
|
| 2007 |
Chang S, Yu H, Veloso A, Lauwers A, Delabie A, Everaert J, Kerner C, Absil P, Hoffmann T, Biesemans S. The Application of an Ultrathin ALD HfSiON Cap Layer on SiON Dielectrics for Ni-FUSI CMOS Technology Targeting at Low-Power Applications Ieee Electron Device Letters. 28: 634-636. DOI: 10.1109/LED.2007.899331 |
0.097 |
|
| 2007 |
Kittl JA, Pawlak MA, Torregiani C, Lauwers A, Demeurisse C, Vrancken C, Absil PP, Biesemans S, Detavernier C, Jordan-Sweet J, Lavoie C. Kinetics of Ni3Si2 formation in the Ni 2Si-NiSi thin film reaction from in situ measurements Applied Physics Letters. 91. DOI: 10.1063/1.2822411 |
0.096 |
|
| 2017 |
Hsu MM, Van Thourhout D, Pantouvaki M, Meersschaut J, Conard T, Richard O, Bender H, Favia P, Vila M, Cid R, Rubio-Zuazo J, Castro GR, Van Campenhout J, Absil P, Merckling C. Controlled orientation of molecular-beam-epitaxial BaTiO3on Si(001) using thickness engineering of BaTiO3and SrTiO3buffer layers Applied Physics Express. 10: 065501. DOI: 10.7567/APEX.10.065501 |
0.091 |
|
| 2007 |
Kittl JA, Pawlak MA, Torregiani C, Lauwers A, Demeurisse C, Vrancken C, Absil PP, Biesemans S, Coia C, Detavernier C, Jordan-Sweet J, Lavoie C. Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications Applied Physics Letters. 91. DOI: 10.1063/1.2799247 |
0.088 |
|
| 2004 |
Van Meir V, Verhoye M, Absil P, Eens M, Balthazart J, Van der Linden A. Differential effects of testosterone on neuronal populations and their connections in a sensorimotor brain nucleus controlling song production in songbirds: a manganese enhanced-magnetic resonance imaging study. Neuroimage. 21: 914-23. PMID 15006658 DOI: 10.1016/J.Neuroimage.2003.10.007 |
0.084 |
|
| 2016 |
Hsu MM, Merckling C, El Kazzi S, Pantouvaki M, Richard O, Bender H, Meersschaut J, Van Campenhout J, Absil P, Van Thourhout D. Diffraction studies for stoichiometry effects in BaTiO3grown by molecular beam epitaxy on Ge(001) Journal of Applied Physics. 120: 225114. DOI: 10.1063/1.4972101 |
0.08 |
|
| 2007 |
Veloso A, Verheyen P, Vos R, Brus S, Ito S, Mitsuhashi R, Paraschiv V, Shi X, Onsia B, Arnauts S, Loo R, Lauwers A, Conard T, De Marneffe JF, Goossens D, ... ... Absil PP, et al. Strain enhanced FUSI/HfSiON technology with optimized CMOS process window Digest of Technical Papers - Symposium On Vlsi Technology. 200-201. DOI: 10.1109/VLSIT.2007.4339692 |
0.075 |
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| 2007 |
Rosseel E, Lu JP, Hikavyy A, Verheyen P, Hoffmann T, Richard O, Geypen J, Bender H, Loo R, Absil P, McIntosh R, Felch SB, Schreutelkamp R. Impact of sub-melt laser annealing on Si1-x-Gex source /drain defectivity 15th Ieee International Conference On Advanced Thermal Processing of Semiconductors, Rtp 2007. 307-315. DOI: 10.1109/RTP.2007.4383859 |
0.074 |
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| 2010 |
Noda T, Ortolland C, Vandervorst W, Vrancken C, Rosseel E, Clarysse T, Absil PP, Biesemans S, Hoffmann T. Laser annealed junctions: Pocket profile analysis using an atomistic kinetic Monte Carlo approach Digest of Technical Papers - Symposium On Vlsi Technology. 73-74. DOI: 10.1109/VLSIT.2010.5556177 |
0.073 |
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| 2008 |
Noda T, Eyben P, Vandervorst W, Vrancken C, Rosseel E, Ortolland C, Clarysse T, Goossens J, De Keersgieter A, Felch S, Schreutelkamp R, Absil PP, Jurczak M, De Meyer K, Biesemans S, et al. Advanced 2D/3D simulations for laser annealed device using an atomistic kinetic monte carlo approach and scanning spreading resistance microscopy (SSRM) Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796745 |
0.071 |
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| 2008 |
Gonzalez MB, Simoen E, Rosseel E, Verheyen P, Souriau L, Geypen J, Bender H, Hoffmann T, Loo R, Absil P, Claeys C. Impact of millisecond laser anneal on the thermal stress-induced defect creation in Si1-x Gex source/drain junctions Ecs Transactions. 13: 23-30. DOI: 10.1149/1.2911481 |
0.067 |
|
| 2014 |
Absil P. High-Speed-Datenverbindungen mit Silizium-Photonik Optik & Photonik. 9: 26-28. DOI: 10.1002/opph.201400056 |
0.061 |
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| 2006 |
Noda T, Vandervorst W, Felch S, Parihar V, Vrancken C, Severi S, Falepin A, Janssens T, Bender H, Van Daele B, Eyben P, Niwa M, Schreutelkamp R, Nouri F, Absil PP, et al. Analysis of dopant diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.346789 |
0.05 |
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| 2007 |
Noda T, Vandervorst W, Felch S, Parihar V, Cuperus A, Mcintosh R, Vrancken C, Rosseel E, Bender H, Van Daele B, Niwa M, Umimoto H, Schreutelkamp R, Absil PP, Jurczak M, et al. Analysis of As, P diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach Technical Digest - International Electron Devices Meeting, Iedm. 955-958. DOI: 10.1109/IEDM.2007.4419111 |
0.047 |
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| 2003 |
Absil P, Pinxten R, Balthazart J, Eens M. Effect of age and testosterone on autumnal neurogenesis in male European starlings (Sturnus vulgaris). Behavioural Brain Research. 143: 15-30. PMID 12842292 DOI: 10.1016/S0166-4328(03)00006-8 |
0.045 |
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| 2019 |
Mertens S, Hoffmann TY, Vrancken C, Jakschik S, Richard O, Verleysen E, Bender H, Zhao C, Vandervorst W, Absil P, Lauwers A. NI (PT) SI Thermal Stability Improvement by Carbon Implantation Ecs Transactions. 13: 397-404. DOI: 10.1149/1.2911522 |
0.043 |
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| 2002 |
Absil P, Papello M, Viglietti-Panzica C, Balthazart J, Panzica G. The medial preoptic nucleus receives vasotocinergic inputs in male quail: a tract-tracing and immunocytochemical study. Journal of Chemical Neuroanatomy. 24: 27-39. PMID 12084409 DOI: 10.1016/S0891-0618(02)00017-0 |
0.034 |
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| 2003 |
Absil P, Pinxten R, Balthazart J, Eens M. Effects of testosterone on Reelin expression in the brain of male European starlings. Cell and Tissue Research. 312: 81-93. PMID 12712319 DOI: 10.1007/S00441-003-0701-9 |
0.022 |
|
| 2013 |
De Vroey S, Huynh H, Lepaumier H, Absil P, Thielens M. Corrosion Investigations In 2-ethanolamine Based Post- Combustion CO2 Capture Pilot Plants Energy Procedia. 37: 2047-2057. DOI: 10.1016/J.EGYPRO.2013.06.083 |
0.022 |
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| 2002 |
Absil P, Braquenier JB, Balthazart J, Ball GF. Effects of lesions of nucleus taeniae on appetitive and consummatory aspects of male sexual behavior in Japanese quail. Brain, Behavior and Evolution. 60: 13-35. PMID 12239468 DOI: 10.1159/000064119 |
0.021 |
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| 2007 |
Demeurisse C, Verheyen P, Opsomer K, Vrancken C, Absil P, Lauwers A. Thermal stability of NiPt- and Pt-silicide contacts on SiGe source/drain Microelectronic Engineering. 84: 2547-2551. DOI: 10.1016/j.mee.2007.05.065 |
0.01 |
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| 2007 |
Yu HY, Lauwers A, Demeurisse C, Richard O, Mertens S, Opsomer K, Singanamalla R, Rosseel E, Absil P, Biesemans S. Electrical Properties of nMOSFETs Using the NiSi:Yb FUSI Electrode Ieee Electron Device Letters. 28: 154-156. DOI: 10.1109/LED.2006.889259 |
0.01 |
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