Brown C. Peethala, Ph.D. - Publications

Affiliations: 
2012 Chemical Engineering Clarkson University, Potsdam, NY, United States 
Area:
Chemical Engineering, Materials Science Engineering

13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Popuri R, Sagi KV, Alety SR, Peethala BC, Amanapu H, Patlolla R, Babu SV. Citric Acid as a Complexing Agent in Chemical Mechanical Polishing Slurries for Cobalt Films for Interconnect Applications Ecs Journal of Solid State Science and Technology. 6: P594-P602. DOI: 10.1149/2.0111709Jss  0.538
2013 Penta NK, Peethala BC, Amanapu HP, Melman A, Babu SV. Role of hydrogen bonding on the adsorption of several amino acids on SiO2 and Si3N4 and selective polishing of these materials using ceria dispersions Colloids and Surfaces a: Physicochemical and Engineering Aspects. 429: 67-73. DOI: 10.1016/J.Colsurfa.2013.03.046  0.517
2013 Penta NK, Amanapu HP, Peethala BC, Babu SV. Use of anionic surfactants for selective polishing of silicon dioxide over silicon nitride films using colloidal silica-based slurries Applied Surface Science. 283: 986-992. DOI: 10.1016/J.Apsusc.2013.07.057  0.603
2012 Peethala BC, Amanapu HP, Lagudu URK, Babu SV. Cobalt polishing with reduced galvanic corrosion at copper/cobalt interface using hydrogen peroxide as an oxidizer in colloidal silica-based slurries Journal of the Electrochemical Society. 159. DOI: 10.1149/2.073206Jes  0.619
2011 Veera Dandu PR, Peethala BC, Amanapu HP, Babu SV. Silicon nitride film removal during chemical mechanical polishing using ceria-based dispersions Journal of the Electrochemical Society. 158. DOI: 10.1149/1.3596181  0.625
2011 Peethala BC, Roy D, Babu SV. Controlling the galvanic corrosion of copper during chemical mechanical planarization of ruthenium barrier films Electrochemical and Solid-State Letters. 14. DOI: 10.1149/1.3589308  0.541
2011 Peethala BC, Babu SV. Ruthenium polishing using potassium periodate as the oxidizer and silica abrasives Journal of the Electrochemical Society. 158. DOI: 10.1149/1.3528942  0.562
2010 Veera Dandu PR, Penta NK, Peethala BC, Babu SV. Novel phosphate-functionalized silica-based dispersions for selectively polishing silicon nitride over silicon dioxide and polysilicon films. Journal of Colloid and Interface Science. 348: 114-8. PMID 20471025 DOI: 10.1016/J.Jcis.2010.04.034  0.578
2010 Dandu PRV, Peethala BC, Babu SV. Role of different additives on silicon dioxide film removal rate during chemical mechanical polishing using ceria-based dispersions Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3457387  0.606
2010 Surisetty CVVS, Peethala BC, Roy D, Babu SV. Utility of oxy-anions for selective low pressure polishing of Cu and Ta in chemical mechanical planarization Electrochemical and Solid-State Letters. 13. DOI: 10.1149/1.3418616  0.539
2010 Janjam SVSB, Peethala BC, Zheng JP, Babu SV, Roy D. Electrochemical investigation of surface reactions for chemically promoted chemical mechanical polishing of TaN in tartaric acid solutions Materials Chemistry and Physics. 123: 521-528. DOI: 10.1016/J.Matchemphys.2010.05.008  0.59
2010 Veera Dandu PR, Peethala BC, Penta NK, Babu SV. Role of amines and amino acids in enhancing the removal rates of undoped and P-doped polysilicon films during chemical mechanical polishing Colloids and Surfaces a: Physicochemical and Engineering Aspects. 366: 68-73. DOI: 10.1016/J.Colsurfa.2010.05.026  0.567
2009 Janjam SVSB, Peethala BC, Roy D, Babu SV. Chemical mechanical planarization of TaN wafers using oxalic and tartaric acid based slurries Electrochemical and Solid-State Letters. 13. DOI: 10.1149/1.3247070  0.601
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