| Year |
Citation |
Score |
| 2015 |
Monti F, Imperiale I, Reggiani S, Gnani E, Gnudi A, Baccarani G, Nguyen L, Hernandez-Luna A, Huckabee J, Tipirneni N, Denison M. Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 2015: 381-384. DOI: 10.1109/ISPSD.2015.7123469 |
0.328 |
|
| 2014 |
Joh J, Tipirneni N, Pendharkar S, Krishnan S. Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications Ieee International Reliability Physics Symposium Proceedings. DOI: 10.1109/IRPS.2014.6861112 |
0.504 |
|
| 2014 |
Tipirneni N, Kao MY. Session 8 normally off gan power devices Cs Mantech 2014 - 2014 International Conference On Compound Semiconductor Manufacturing Technology. 139-140. |
0.331 |
|
| 2013 |
Jin D, Joh J, Krishnan S, Tipirneni N, Pendharkar S, Del Alamo JA. Total current collapse in high-voltage GaN MIS-HEMTs induced by Zener trapping Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2013.6724572 |
0.473 |
|
| 2009 |
Wang B, Tipirneni N, Riva M, Monti A, Simin G, Santi E. An efficient high-frequency drive circuit for GaN power HFETs Ieee Transactions On Industry Applications. 45: 843-853. DOI: 10.1109/Tia.2009.2013578 |
0.656 |
|
| 2007 |
Tipirneni N, Adivarahan V, Simin G, Khan A. Silicon dioxide-encapsulated high-voltage AlGaN/GaN HFETs for power-switching applications Ieee Electron Device Letters. 28: 784-786. DOI: 10.1109/Led.2007.903910 |
0.724 |
|
| 2007 |
Tipirneni N, Wang B, Monti A, Simin G. AlGaN/GaN bidirectional power switch 65th Drc Device Research Conference. 97-98. DOI: 10.1109/DRC.2007.4373667 |
0.387 |
|
| 2006 |
Rai S, Adivarahan V, Tipirneni N, Koudymov A, Yang J, Simin G, Khan MA. Low threshold-14 W/mm ZrO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 4985-4987. DOI: 10.1143/Jjap.45.4985 |
0.713 |
|
| 2006 |
Tipirneni N, Koudymov A, Adivarahan V, Yang J, Simin G, Khan MA. The 1.6-kV AlGaN/GaN HFETs Ieee Electron Device Letters. 27: 716-718. DOI: 10.1109/Led.2006.881084 |
0.711 |
|
| 2006 |
Wang B, Tipirneni N, Riva M, Monti A, Simin G, Santi E. A resonant drive circuit for GaN power MOSHFET Conference Record - Ias Annual Meeting (Ieee Industry Applications Society). 1: 364-368. DOI: 10.1109/IAS.2006.256547 |
0.49 |
|
| 2006 |
Adivarahan V, Rai S, Tipirneni N, Koudymov A, Yang J, Simin G, Khan MA. Digital oxide deposition of SiO 2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors Applied Physics Letters. 88. DOI: 10.1063/1.2198508 |
0.686 |
|
| 2005 |
Koley G, Lakshmanan L, Tipirneni N, Gaevski M, Koudymov A, Simin G, Cha HY, Spencer MG, Khan A. Nanoscale capacitance-voltage characterization of two-dimensional electron gas in AlGaN/GaN heterostructures Japanese Journal of Applied Physics, Part 2: Letters. 44. DOI: 10.1143/Jjap.44.L1348 |
0.691 |
|
| 2005 |
Simin G, Tipirneni N, Rai S, Koudymov A, Adivarahan V, Yang J, Khan MA. 1.5 kV power AlGaN/GaN HFETs 2005 International Semiconductor Device Research Symposium. 2005: 164-165. |
0.708 |
|
| 2005 |
Koudymov A, Saygi S, Tipirneni N, Simin G, Adivarahan V, Yang J, Khan MA. AlGaN/GaN HFETs and insulated gate HFETs DC and RF stability Materials Research Society Symposium Proceedings. 831: 349-354. |
0.679 |
|
| 2004 |
Koudymov A, Saygi S, Tipirneni N, Simin G, Adivarahan V, Yang J, Khan MA. AlGaN/GaN HFETs and Insulated Gate HFETs DC and RF stability Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E6.4 |
0.652 |
|
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