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Dmitry Donetsky - Publications

Affiliations: 
Electrical Engineering Stony Brook University, Stony Brook, NY, United States 
Area:
Electronics and Electrical Engineering
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43 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Liu J, Donetsky D, Jiang H, Kipshidze G, Shterengas L, Belenky G, Sarney WL, Svensson SP. Electrical modulation of the LWIR absorption and refractive index in InAsSb-based strained layer superlattice heterostructures Journal of Applied Physics. 128: 83101. DOI: 10.1063/5.0016149  0.496
2017 Svensson SP, Sarney WL, Donetsky D, Kipshidze G, Lin Y, Shterengas L, Xu Y, Belenky G. Materials design parameters for infrared device applications based on III-V semiconductors. Applied Optics. 56: B58-B63. PMID 28157865 DOI: 10.1364/Ao.56.000B58  0.429
2016 Vurgaftman I, Belenky G, Lin Y, Donetsky D, Shterengas L, Kipshidze G, Sarney WL, Svensson SP. Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials Applied Physics Letters. 108. DOI: 10.1063/1.4953035  0.378
2016 Sarney WL, Svensson SP, Lin Y, Donetsky D, Shterengas L, Kipshidze G, Belenky G. Extremely small bandgaps, engineered by controlled multi-scale ordering in InAsSb Journal of Applied Physics. 119. DOI: 10.1063/1.4952754  0.347
2015 Belenky G, Lin Y, Shterengas L, Donetsky D, Kipshidze G, Suchalkin S. Lattice parameter engineering for III-V long wave infrared photonics Electronics Letters. 51: 1521-1522. DOI: 10.1049/El.2015.2572  0.395
2015 Sarney WL, Svensson SP, Wang D, Donetsky D, Kipshidze G, Shterengas L, Lin Y, Belenky G. AlInAsSb for M-LWIR detectors Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.036  0.336
2015 Lin Y, Donetsky D, Wang D, Westerfeld D, Kipshidze G, Shterengas L, Sarney WL, Svensson SP, Belenky G. Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors Journal of Electronic Materials. 44: 3360-3366. DOI: 10.1007/S11664-015-3892-4  0.427
2014 Lin Y, Wang D, Donetsky D, Kipshidze G, Shterengas L, Belenky G, Sarney WL, Svensson SP. Structural and optical characteristics of metamorphic bulk InAsSb International Journal of High Speed Electronics and Systems. 23. DOI: 10.1142/S0129156414500219  0.497
2014 Lin Y, Wang D, Donetsky D, Kipshidze G, Shterengas L, Vorobjev LE, Belenky G. Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/112002  0.388
2014 Lin Y, Wang D, Donetsky D, Belenky G, Hier H, Sarney WL, Svensson SP. Minority carrier lifetime in beryllium-doped InAs/InAsSb strained layer superlattices Journal of Electronic Materials. 43: 3184-3190. DOI: 10.1007/S11664-014-3239-6  0.38
2013 Wang D, Lin Y, Donetsky D, Kipshidze G, Shterengas L, Belenky G, Stefan PS, Wendy LS, Hier H. Infrared emitters and photodetectors with InAsSb bulk active regions Proceedings of Spie - the International Society For Optical Engineering. 8704. DOI: 10.1117/12.2016082  0.485
2013 Wang D, Donetsky D, Kipshidze G, Lin Y, Shterengas L, Belenky G, Sarney W, Svensson S. Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region Applied Physics Letters. 103. DOI: 10.1063/1.4817823  0.456
2013 Belenky G, Wang D, Lin Y, Donetsky D, Kipshidze G, Shterengas L, Westerfeld D, Sarney WL, Svensson SP. Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications Applied Physics Letters. 102. DOI: 10.1063/1.4796181  0.467
2013 Lin Y, Wang D, Donetsky D, Shterengas L, Kipshidze G, Belenky G, Svensson SP, Sarney WL, Hier HS. Conduction- and valence-band energies in bulk InAs1-x Sb x and type II InAs1-x Sb x /InAs strained-layer superlattices Journal of Electronic Materials. 42: 918-926. DOI: 10.1007/S11664-013-2528-9  0.421
2012 Wang D, Donetsky D, Lin Y, Kipshidze G, Shterengas L, Belenky G, Sarney WL, Svensson SP. InAs1-xSbx alloys with native lattice parameters grown on compositionally graded buffers: Structural and optical properties International Journal of High Speed Electronics and Systems. 21. DOI: 10.1142/S0129156412500139  0.492
2012 Wang D, Lin Y, Donetsky D, Shterengas L, Kipshidze G, Belenky G, Sarney WL, Hier H, Svensson SP. Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919451  0.502
2012 Svensson SP, Hier H, Sarney WL, Donetsky D, Wang D, Belenky G. Molecular beam epitaxy control and photoluminescence properties of InAsBi Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672023  0.366
2012 Sarney WL, Svensson SP, Hier H, Kipshidze G, Donetsky D, Wang D, Shterengas L, Belenky G. Structural and luminescent properties of bulk InAsSb Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3670749  0.325
2012 Svensson SP, Sarney WL, Hier H, Lin Y, Wang D, Donetsky D, Shterengas L, Kipshidze G, Belenky G. Band gap of InAs1-xSbx with native lattice constant Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.245205  0.444
2011 Belenky G, Kipshidze G, Donetsky D, Svensson SP, Sarney WL, Hier H, Shterengas L, Wang D, Lin Y. Effects of carrier concentration and phonon energy on carrier lifetime in Type-2 SLS and properties of InAs1-XSbX alloys Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.883625  0.425
2011 Sarney WL, Svensson SP, Hier H, Donetsky D, Wang D, Shterengas L, Suchalkin S, Belenky G. New approaches to direct bandgap III-V materials for LWIR detector applications Aip Conference Proceedings. 1416: 59-61. DOI: 10.1063/1.3671698  0.326
2011 Belenky G, Donetsky D, Kipshidze G, Wang D, Shterengas L, Sarney WL, Svensson SP. Properties of unrelaxed InAs1-XSbX alloys grown on compositionally graded buffers Applied Physics Letters. 99. DOI: 10.1063/1.3650473  0.485
2011 Svensson SP, Donetsky D, Wang D, Hier H, Crowne FJ, Belenky G. Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization Journal of Crystal Growth. 334: 103-107. DOI: 10.1016/J.Jcrysgro.2011.08.030  0.456
2010 Svensson SP, Donetsky D, Wang D, Maloney P, Belenky G. Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.849514  0.504
2010 Donetsky D, Belenky G, Svensson S, Suchalkin S. Minority carrier lifetime in type-2 InAs-GaSb strained-layer superlattices and bulk HgCdTe materials Applied Physics Letters. 97. DOI: 10.1063/1.3476352  0.457
2009 Donetsky D, Svensson SP, Vorobjev LE, Belenky G. Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures Applied Physics Letters. 95. DOI: 10.1063/1.3267103  0.509
2008 Belenky G, Shterengas L, Donetsky D, Kisin M, Kipshidze G. Advances in type-I GaSb based lasers Japanese Journal of Applied Physics. 47: 8236-8238. DOI: 10.1143/Jjap.47.8236  0.395
2008 Belenky G, Donetsky D, Shterengas L, Hosoda T, Chen J, Kipshidze G, Kisin M, Westerfeld D. Interband GaSb-based laser diodes for spectral regions of 2.3-2.4 μm and 3-3.1 μm with improved room-temperature performance Proceedings of Spie - the International Society For Optical Engineering. 6900. DOI: 10.1117/12.754713  0.327
2008 Chen J, Donetsky D, Shterengas L, Kisin MV, Kipshidze G, Belenky G. Effect of quantum well compressive strain above 1 % on differential gain and threshold current density in type-I GaSb-based diode lasers Ieee Journal of Quantum Electronics. 44: 1204-1210. DOI: 10.1109/Jqe.2008.2002104  0.401
2008 Shterengas L, Kipshidze G, Hosoda T, Donetsky D, Belenky G. Room temperature operated 3.1-μm type-I GaSb-based diode lasers with 80mW continuous wave output power 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1063/1.2919720  0.307
2007 Donetsky D, Anikeev S, Gu N, Dashiell M, Ehsani H, Newman F, Wanlass M, Wang C. Effects of zinc and tellurium doping on minority carrier recombination in lattice-matched and lattice-mismatched InGaAs/InP epitaxial layers and thermophotovoltaic cells Conference Record of the 2006 Ieee 4th World Conference On Photovoltaic Energy Conversion, Wcpec-4. 1: 764-767. DOI: 10.1109/WCPEC.2006.279568  0.381
2004 Shterengas L, Belenky GL, Gourevitch A, Donetsky D, Kim JG, Martinelli RU, Westerfeld D. High-power 2.3-μm GaSb-based linear laser array Ieee Photonics Technology Letters. 16: 2218-2220. DOI: 10.1109/Lpt.2004.833920  0.348
2004 Laikhtman B, Gourevitch A, Donetsky D, Westerfeld D, Belenky G. Current spread and overheating of high power laser bars Journal of Applied Physics. 95: 3880-3889. DOI: 10.1063/1.1655687  0.341
2004 Wang CA, Shiau DA, Donetsky D, Anikeev S, Belenky G, Luryi S. Effect of growth interruption on surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor-phase epitaxy Journal of Crystal Growth. 272: 711-718. DOI: 10.1016/J.Jcrysgro.2004.09.020  0.348
2004 Wang CA, Shiau DA, Murphy PG, O'Brien PW, Huang RK, Connors MK, Anderson AC, Donetsky D, Anikeev S, Belenky G, Depoy DM, Nichols G. Wafer Bonding and Epitaxial Transfer of GaSb-Based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices Journal of Electronic Materials. 33: 213-217. DOI: 10.1007/S11664-004-0182-Y  0.42
2003 Anikeev S, Donetsky D, Belenky G, Luryi S, Wang CA, Borrego JM, Nichols G. Measurement of the Auger recombination rate in p-type 0.54 eV GalnAsSb by time-resolved photoluminescence Applied Physics Letters. 83: 3317-3319. DOI: 10.1063/1.1621455  0.336
2003 Donetsky D, Anikeev S, Belenky G, Luryi S, Wang CA, Nichols G. Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures Applied Physics Letters. 81: 4769-4771. DOI: 10.1063/1.1530743  0.432
1999 Belenky GL, Reynolds CL, Donetsky DV, Shtengel GE, Hybertsen MS, Alam MA, Baraff GA, Smith RK, Kazarinov RF, Winn J, Smith LE. Role of p-doping profile and regrowth on the static characteristics of 1.3-μm MQW InGaAsP-InP lasers: experiment and modeling Ieee Journal of Quantum Electronics. 35: 1515-1520. DOI: 10.1109/3.792585  0.307
1998 Donetsky DV, Belenky GL, Shtengel GE, Reynolds CL, Kazarinov RF, Luryi S. Temperature dependencies of output characteristics of 1.3 μm InGaAsP/InP lasers with different profiles of p-doping Proceedings of Spie - the International Society For Optical Engineering. 3283: 423-431. DOI: 10.1117/12.316692  0.345
1998 Belenky G, Donetsky D, Reynolds C, Shtengel G, Kazarinov R, Luryi S. 1.3μm InGaAsP/InP MQW lasers for high temperature operation. Experiment and modeling Conference On Lasers and Electro-Optics Europe - Technical Digest. 227.  0.347
1998 Donetsky DV, Reynolds CL, Belenky GL, Shtengel GE, Kazarinov RF, Luryi S. Optimization of p-doping profile of 1.3-μm InGaAsP/InP MQW lasers for high-temperature operation Conference On Lasers and Electro-Optics Europe - Technical Digest. 302-303.  0.354
1997 Belenky GL, Donetsky DV, Reynolds CL, Kazarinov RF, Shtengel GE, Luryi S, Lopata J. Temperature performance of 1.3-μm InGaAsP-InP lasers with different profile of p-doping Ieee Photonics Technology Letters. 9: 1558-1560. DOI: 10.1109/68.643259  0.321
1997 Donetsky DV, Belenky GL, Reynolds CL, Kazarinov RF, Luryi S. Effect of p-doping on carrier leakage and characteristic temperature To of 1.3 μm strained InGaAsP/InP multiple quantum well lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 11: 157.  0.339
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