| Year |
Citation |
Score |
| 2020 |
Stübner R, Kolkovsky V, Weber J, Abrosimov NV, Stanley CM, Backlund DJ, Estreicher S. Identification of the donor and acceptor states of the bond-centered hydrogen–carbon pair in Si and diluted SiGe alloys Journal of Applied Physics. 127: 45701. DOI: 10.1063/1.5135757 |
0.408 |
|
| 2010 |
Backlund DJ, Estreicher SK. Ti, Fe, and Ni in Si and their interactions with the vacancy and the A center: A theoretical study Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.235213 |
0.393 |
|
| 2009 |
Estreicher SK, Gibbons TM. Non-equilibrium molecular-dynamics for impurities in semiconductors: Vibrational lifetimes and thermal conductivities Physica B: Condensed Matter. 404: 4509-4514. DOI: 10.1016/J.Physb.2009.08.102 |
0.334 |
|
| 2007 |
Gonzalez Szwacki N, Estreicher SK. First-principles investigations of Fe-H interactions in silicon Physica B: Condensed Matter. 401: 171-174. DOI: 10.1016/J.Physb.2007.08.139 |
0.376 |
|
| 2003 |
Estreicher SK, West D, Goss J, Knack S, Weber J. First-principles calculations of pseudolocal vibrational modes: the case of Cu and Cu pairs in Si. Physical Review Letters. 90: 035504. PMID 12570504 DOI: 10.1103/Physrevlett.90.035504 |
0.308 |
|
| 2002 |
Estreicher SK, West D, Ordejón P. Copper-defect and copper-impurity interactions in silicon Solid State Phenomena. 82: 341-348. |
0.322 |
|
| 2001 |
Estreicher SK, Gharaibeh M, Fedders PA, Ordejón P. Unexpected dynamics for self-interstitial clusters in silicon. Physical Review Letters. 86: 1247-50. PMID 11178055 DOI: 10.1103/Physrevlett.86.1247 |
0.636 |
|
| 2001 |
Gharaibeh M, Estreicher SK, Fedders PA. Dynamics of Si self-interstitial clustering using the fast-diffusing I3 cluster Physica B: Condensed Matter. 308: 510-512. DOI: 10.1016/S0921-4526(01)00729-3 |
0.649 |
|
| 2001 |
Estreicher SK, Fedders PA, Ordejón P. The fascinating dynamics of defects in silicon Physica B: Condensed Matter. 308: 1-7. DOI: 10.1016/S0921-4526(01)00647-0 |
0.384 |
|
| 2000 |
Estreicher SK. Structure and dynamics of point defects in crystalline silicon Physica Status Solidi (B) Basic Research. 217: 513-532. |
0.44 |
|
| 1999 |
Estreicher SK, Hastings JL, Feeders PA. Hydrogen-defect interactions in Si Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 58: 31-35. DOI: 10.1016/S0921-5107(98)00270-0 |
0.338 |
|
| 1999 |
Gharaibeh M, Estreicher SK, Fedders PA. Molecular-dynamics studies of self-interstitial aggregates in Si Physica B: Condensed Matter. 273: 532-534. DOI: 10.1016/S0921-4526(99)00566-9 |
0.636 |
|
| 1999 |
Estreicher SK. Copper-related defects in silicon Physica B: Condensed Matter. 273: 424-428. DOI: 10.1016/S0921-4526(99)00496-2 |
0.32 |
|
| 1999 |
Hastings JL, Gharaibeh M, Estreicher SK, Fedders PA. Hydrogen interactions with intrinsic defects in silicon Physica B: Condensed Matter. 273: 216-219. DOI: 10.1016/S0921-4526(99)00456-1 |
0.656 |
|
| 1999 |
Hourahine B, Jones R, Safonov AN, Öberg S, Briddon PR, Estreicher SK. Optically active hydrogen dimers in silicon Physica B: Condensed Matter. 273: 176-179. DOI: 10.1016/S0921-4526(99)00439-1 |
0.304 |
|
| 1994 |
Estreicher SK, Roberson MA, Maric DM. Hydrogen and hydrogen dimers in c-C, Si, Ge, and α-Sn Physical Review B. 50: 17018-17027. DOI: 10.1103/PhysRevB.50.17018 |
0.38 |
|
| 1994 |
Roberson MA, Estreicher SK. Vacancy and vacancy-hydrogen complexes in silicon Physical Review B. 49: 17040-17049. DOI: 10.1103/PhysRevB.49.17040 |
0.35 |
|
| 1993 |
Roberson MA, Estreicher SK, Chu CH. Interstitial oxygen in elemental and compound semiconductors: Fundamental properties and trends Journal of Physics: Condensed Matter. 5: 8943-8954. DOI: 10.1088/0953-8984/5/48/005 |
0.311 |
|
| 1992 |
Korpás L, Corbett JW, Estreicher SK. Multiple trapping of hydrogen at boron and phosphorus in silicon Physical Review B. 46: 12365-12370. DOI: 10.1103/PhysRevB.46.12365 |
0.311 |
|
| 1992 |
Woon DE, Marynick DS, Estreicher SK. Titanium and copper in Si: Barriers for diffusion and interactions with hydrogen Physical Review B. 45: 13383-13389. DOI: 10.1103/Physrevb.45.13383 |
0.384 |
|
| 1991 |
Roberson MA, Estreicher SK. Interstitial hydrogen in cubic and hexagonal SiC Physical Review B. 44: 10578-10584. DOI: 10.1103/PhysRevB.44.10578 |
0.33 |
|
| 1991 |
Maric DM, Vogel S, Meier PF, Estreicher SK. Theoretical study of the Cox-Symons model for normal muonium in silicon Hyperfine Interactions. 64: 573-578. DOI: 10.1007/BF02396192 |
0.352 |
|
| 1990 |
Chu CH, Estreicher SK. Similarities, differences, and trends in the properties of interstitial H in cubic C, Si, BN, BP, AlP, and SiC Physical Review B. 42: 9486-9495. DOI: 10.1103/PhysRevB.42.9486 |
0.376 |
|
| 1990 |
Estreicher SK. Copper, lithium, and hydrogen passivation of boron in c-Si Physical Review B. 41: 5447-5450. DOI: 10.1103/PhysRevB.41.5447 |
0.315 |
|
| 1989 |
Estreicher SK, Chu CH, Marynick DS. Equilibrium structures of neutral interstitial hydrogen in zinc-blende BN and BP Physical Review B. 40: 5739-5744. DOI: 10.1103/PhysRevB.40.5739 |
0.313 |
|
| 1988 |
Estreicher S. Surface and size effects for impurities in Si clusters Physical Review B. 37: 858-863. DOI: 10.1103/Physrevb.37.858 |
0.457 |
|
| 1987 |
Estreicher S. Equilibrium sites and electronic structure of interstitial hydrogen in Si Physical Review B. 36: 9122-9128. DOI: 10.1103/Physrevb.36.9122 |
0.457 |
|
| 1986 |
Estreicher S, Ray AK, Fry JL, Marynick DS. Interstitial hydrogen in diamond: A detailed Hartree-Fock analysis. Physical Review. B, Condensed Matter. 34: 6071-6079. PMID 9940479 DOI: 10.1103/Physrevb.34.6071 |
0.307 |
|
| 1986 |
Marynick DS, Estreicher S. Localized molecular orbitals and electronic structure of buckminsterfullerene Chemical Physics Letters. 132: 383-386. DOI: 10.1016/0009-2614(86)80630-3 |
0.356 |
|
| 1986 |
Estle TL, Estreicher S, Marynick DS. Preliminary calculations confirming that anomalous muonium in diamond and silicon is bond-centered interstitial muonium Hyperfine Interactions. 32: 637-639. DOI: 10.1007/Bf02394968 |
0.374 |
|
| 1986 |
Estreicher S, Marynick DS. Lattice relaxation for normal muonium in diamond Hyperfine Interactions. 32: 613-617. DOI: 10.1007/Bf02394964 |
0.351 |
|
| 1984 |
Estreicher S, Estle TL. Rotronic Jahn-Teller effect for diatomic molecular impurities at cubic sites in ionic crystals Physical Review B. 30: 7-18. DOI: 10.1103/Physrevb.30.7 |
0.305 |
|
| 1984 |
Estreicher S, Meier PF. Change of energy profiles for muons upon lattice relaxation Hyperfine Interactions. 17: 371-375. DOI: 10.1007/Bf02065928 |
0.333 |
|
| 1983 |
Estreicher S, Meier PF. Energy profiles for light impurities in simple metals Physical Review B. 27: 642-658. DOI: 10.1103/Physrevb.27.642 |
0.364 |
|
| Low-probability matches (unlikely to be authored by this person) |
| 2012 |
Estreicher SK, Carvalho A. The Cu PL defect and the Cu s1Cu i3 complex Physica B: Condensed Matter. 407: 2967-2969. DOI: 10.1016/J.Physb.2011.08.002 |
0.298 |
|
| 1984 |
Estreicher S, Meier PF. Trapping of muons in doped Al and Cu Hyperfine Interactions. 17: 241-246. DOI: 10.1007/Bf02065909 |
0.298 |
|
| 2004 |
Estreicher SK, Sanati M, West D, Ruymgaart F. Thermodynamics of impurities in semiconductors Physical Review B - Condensed Matter and Materials Physics. 70. DOI: 10.1103/Physrevb.70.125209 |
0.296 |
|
| 1989 |
Maric DM, Vogel S, Meier PF, Estreicher SK. Equilibrium configuration of bond-centered H0 in GaAs Physical Review B. 40: 8545-8547. DOI: 10.1103/PhysRevB.40.8545 |
0.293 |
|
| 2002 |
Pruneda JM, Estreicher SK, Junquera J, Ferrer J, Ordejón P. Ab initio local vibrational modes of light impurities in silicon Physical Review B - Condensed Matter and Materials Physics. 65: 752101-752108. |
0.291 |
|
| 2011 |
Estreicher SK, Backlund DJ, Carbogno C, Scheffler M. Activation energies for diffusion of defects in silicon: the role of the exchange-correlation functional. Angewandte Chemie (International Ed. in English). 50: 10221-5. PMID 21598366 DOI: 10.1002/Anie.201100733 |
0.291 |
|
| 2001 |
Gharaibeh M, Estreicher SK, Fedders PA, Ordejón P. Self-interstitial - Hydrogen complexes in Si Physical Review B - Condensed Matter and Materials Physics. 64: 2352111-2352117. |
0.289 |
|
| 1994 |
Roberson MA, Estreicher SK, Korpas L, Corbett JW. Vacancies and {V,Hn} complexes in Si: Stable structures, relative stability, and diffusion properties Materials Science Forum. 143: 1227-1232. |
0.288 |
|
| 1985 |
Estreicher S, Ray AK, Fry JL, Marynick DS. Surface effects in cluster calculations of energy profiles of muonium in diamond. Physical Review Letters. 55: 1976-1978. PMID 10031977 DOI: 10.1103/PhysRevLett.55.1976 |
0.286 |
|
| 1995 |
Estreicher SK. Hydrogen-related defects in crystalline semiconductors: a theorist's perspective Materials Science and Engineering R. 14: 319-412. DOI: 10.1016/0927-796X(95)00178-6 |
0.285 |
|
| 1998 |
Estreicher SK, Hastings JL, Fedders PA. Defect-induced dissociation of H2 in silicon Physical Review B - Condensed Matter and Materials Physics. 57: R12663-R12665. DOI: 10.1103/Physrevb.57.R12663 |
0.284 |
|
| 1993 |
Maric DM, Meier PF, Estreicher SK. {H,B}, {H,C}, and {H,Si} pairs in silicon and germanium Physical Review B. 47: 3620-3625. DOI: 10.1103/PhysRevB.47.3620 |
0.284 |
|
| 2001 |
Estreicher SK, Wells K, Fedders PA, Ordejón P. Dynamics of interstitial hydrogen molecules in crystalline silicon Journal of Physics Condensed Matter. 13: 6271-6283. DOI: 10.1088/0953-8984/13/29/301 |
0.283 |
|
| 1982 |
Estreicher S, Meier PF. Hyperfine fields at impurities in ferromagnetic metals Physical Review B. 25: 297-310. DOI: 10.1103/Physrevb.25.297 |
0.283 |
|
| 1990 |
Estreicher SK. Interstitial O in Si and its interactions with H Physical Review B. 41: 9886-9891. DOI: 10.1103/PhysRevB.41.9886 |
0.281 |
|
| 2005 |
Estreicher SK. Theory of defects in semiconductors: Recent developments and challenges Electrochemical Society Interface. 14: 28-31. |
0.279 |
|
| 2003 |
Sanati M, Estreicher SK. Defects in silicon: The role of vibrational entropy Solid State Communications. 128: 181-185. DOI: 10.1016/j.ssc.2003.08.005 |
0.278 |
|
| 2012 |
Estreicher SK, Docaj A, Bebek MB, Backlund DJ, Stavola M. Hydrogen in C-rich Si and the diffusion of vacancy-H complexes Physica Status Solidi (a) Applications and Materials Science. 209: 1872-1879. DOI: 10.1002/Pssa.201200054 |
0.277 |
|
| 1997 |
Estreicher SK, Hastings JL, Fedders PA. The ring-hexavacany in silicon: A stable and inactive defect Applied Physics Letters. 70: 432-434. DOI: 10.1063/1.118172 |
0.277 |
|
| 2013 |
Gibbons TM, Estreicher SK, Potter K, Bekisli F, Stavola M. Huge isotope effect on the vibrational lifetimes of an H2*(C) defect in Si Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.115207 |
0.276 |
|
| 2006 |
Carvalho A, Jones R, Sanati M, Estreicher SK, Coutinho J, Briddon PR. First-principles investigation of a bistable boron-oxygen interstitial pair in Si Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/PhysRevB.73.245210 |
0.275 |
|
| 1997 |
Estreicher SK, Fedders PA. Molecular-dynamics simulations of microscopic defects in silicon Materials Science Forum. 258: 171-178. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.171 |
0.274 |
|
| 2010 |
Backlund DJ, Estreicher SK. Ti-H and Ni-H interactions in Si: First-principles theory Materials Research Society Symposium Proceedings. 1268: 19-24. |
0.274 |
|
| 1991 |
Korpàs L, Corbett JW, Estreicher SK. New traps for H0 in p-type Si Superlattices and Microstructures. 10: 121-125. DOI: 10.1016/0749-6036(91)90160-S |
0.272 |
|
| 2007 |
Sanati M, Szwacki NG, Estreicher SK. Interstitial Fe in Si and its interactions with hydrogen and shallow dopants Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/PhysRevB.76.125204 |
0.271 |
|
| 1996 |
Sopori BL, Deng X, Benner JP, Rohatgi A, Sana P, Estreicher SK, Park YK, Roberson MA. Hydrogen in silicon: A discussion of diffusion and passivation mechanisms Solar Energy Materials and Solar Cells. 41: 159-169. DOI: 10.1016/0927-0248(95)00098-4 |
0.271 |
|
| 2003 |
Sanati M, Estreicher SK. First-principles thermodynamics of defects in semiconductors Physica B: Condensed Matter. 340: 630-636. DOI: 10.1016/j.physb.2003.09.158 |
0.27 |
|
| 1999 |
Estreicher SK, Hastings JL. Cu-related complexes in silicon Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 58: 155-158. DOI: 10.1016/S0921-5107(98)00289-X |
0.27 |
|
| 1999 |
Estreicher SK. Rich chemistry of copper in crystalline silicon Physical Review B - Condensed Matter and Materials Physics. 60: 5375-5382. |
0.267 |
|
| 1994 |
Sopori BL, Deng X, Benner JP, Rohatgi A, Sana P, Estreicher SK, Park YK, Roberson MA. Hydrogen in silicon: current understanding of diffusion and passivation mechanisms Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 1615-1620. |
0.266 |
|
| 2004 |
Estreicher SK, Sanati M. Calculating the properties of defects in semiconductors at finite temperatures Defect and Diffusion Forum. 230: 47-54. |
0.266 |
|
| 1993 |
Estreicher SK, Maric DM. What is so strange about hydrogen interactions in germanium? Physical Review Letters. 70: 3963-3966. DOI: 10.1103/PhysRevLett.70.3963 |
0.266 |
|
| 2001 |
Pruneda JM, Junquera J, Ferrer J, Ordejón P, Estreicher SK. Vibrational properties of H-related defects in silicon Physica B: Condensed Matter. 308: 147-150. DOI: 10.1016/S0921-4526(01)00674-3 |
0.266 |
|
| 1984 |
Estreicher S, Meier PF. Influence of lattice relaxation and zero-point motion on the hyperfine field at muons in ferromagnetic metals Hyperfine Interactions. 17: 327-331. DOI: 10.1007/Bf02065920 |
0.265 |
|
| 2003 |
West D, Estreicher SK, Knack S, Weber J. Copper interactions with H, O, and the self-interstitial in silicon Physical Review B - Condensed Matter and Materials Physics. 68: 352101-352107. |
0.263 |
|
| 2001 |
Estreicher SK, McAfee JL, Fedders PA, Pruneda JM, Ordejón P. The strange behavior of interstitial H2 molecules Si and GaAs Physica B: Condensed Matter. 308: 202-205. DOI: 10.1016/S0921-4526(01)00721-9 |
0.262 |
|
| 2006 |
Kohli KK, Davies G, Vinh NQ, West D, Estreicher SK, Gregorkiewicz T, Izeddin I, Itoh KM. Isotope dependence of the lifetime of the 1136-cm-1 vibration of oxygen in silicon Physical Review Letters. 96. DOI: 10.1103/PhysRevLett.96.225503 |
0.261 |
|
| 2012 |
Docaj A, Estreicher SK. Three carbon pairs in Si Physica B: Condensed Matter. 407: 2981-2984. DOI: 10.1016/j.physb.2011.08.029 |
0.26 |
|
| 2008 |
Estreicher SK, Sanati M, Gonzalez Szwacki N. Fundamental interactions of fe in silicon: First-principles theory Solid State Phenomena. 131: 233-240. |
0.259 |
|
| 2006 |
Estreicher SK, Sanati M. D, H, and Mu in GaN: Theoretical predictions at finite temperatures Physica B: Condensed Matter. 374: 363-367. DOI: 10.1016/j.physb.2005.11.102 |
0.258 |
|
| 2006 |
Estreicher SK, West D. Vibrational lifetimes of light impurities in silicon Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 253: 196-199. DOI: 10.1016/J.Nimb.2006.10.044 |
0.258 |
|
| 1995 |
Zhou Y, Luchsinger R, Meier PF, Suter HU, Maric D, Estreicher SK. Calculations of the neutral and charged states of the {H,C} pair in silicon Materials Science Forum. 196: 891-896. |
0.257 |
|
| 2014 |
Stavola M, Estreicher SK, Seacrist M. Light-element impurities and their reactions in multicrystalline Si Solid State Phenomena. 205: 201-208. DOI: 10.4028/Www.Scientific.Net/Ssp.205-206.201 |
0.255 |
|
| 2006 |
West D, Estreicher SK. First-principles theory of the temperature dependence of vibrational lifetimes for light impurities in Si Physica B: Condensed Matter. 376: 963-965. DOI: 10.1016/j.physb.2005.12.239 |
0.254 |
|
| 2010 |
Estreicher SK, Backlund DJ. Electrically active and electrically inactive 3d transition metal centers in Si Materials Research Society Symposium Proceedings. 1268: 3-11. |
0.251 |
|
| 1995 |
Park YK, Estreicher SK, Myles CW, Fedders PA. Molecular-dynamics study of the vacancy and vacancy-hydrogen interactions in silicon. Physical Review. B, Condensed Matter. 52: 1718-1723. PMID 9981237 DOI: 10.1103/Physrevb.52.1718 |
0.25 |
|
| 1997 |
Estreicher SK, Weber J, Derecskei-Kovacs A, Marynick DS. Noble-gas-related defects in Si and the origin of the 1018 meV photoluminescence line Physical Review B - Condensed Matter and Materials Physics. 55: 5037-5044. |
0.248 |
|
| 2011 |
Peng C, Zhang H, Stavola M, Fowler WB, Esham B, Estreicher SK, Docaj A, Carnel L, Seacrist M. Microscopic structure of a VH4 center trapped by C in Si Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.195205 |
0.247 |
|
| 2010 |
Backlund DJ, Estreicher SK. Structural, electrical, and vibrational properties of Ti-H and Ni-H complexes in Si Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/PhysRevB.82.155208 |
0.247 |
|
| 2004 |
McAfee JL, Ren H, Estreicher SK. Structural and vibrational properties of {N,N} pairs and {N,H} complexes in Si Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/PhysRevB.69.165206 |
0.246 |
|
| 2002 |
Estreicher SK, West D, Pruneda JM, Knack S, Weber J. Formation and properties of three copper pairs in silicon Materials Research Society Symposium - Proceedings. 719: 421-426. |
0.245 |
|
| 1987 |
Estle TL, Estreicher S, Marynick DS. Bond-centered hydrogen or muonium in diamond: The explanation for anomalous muonium and an example of metastability Physical Review Letters. 58: 1547-1550. DOI: 10.1103/PhysRevLett.58.1547 |
0.245 |
|
| 1981 |
Holzschuh E, Estreicher S, Kündig W, Meier PF, Patterson BD, Sellshop JPF, Stemmet MC, Appel H. Muonium in diamond Hyperfine Interactions. 9: 611-616. DOI: 10.1007/Bf01020984 |
0.242 |
|
| 2014 |
Estreicher SK, Gibbons TM, Stavola M. Isotope-dependent phonon trapping at defects in semiconductors Solid State Phenomena. 205: 209-212. DOI: 10.4028/Www.Scientific.Net/Ssp.205-206.209 |
0.242 |
|
| 1994 |
Estreicher SK. Hydrogen in semiconductors: The roles of μSR and theory Hyperfine Interactions. 86: 625-637. DOI: 10.1007/BF02068957 |
0.241 |
|
| 1992 |
Estreicher SK, Latham CD, Heggie MI, Jones R, Öberg S. Stable and metastable states of C60H: buckminsterfullerene monohydride Chemical Physics Letters. 196: 311-316. DOI: 10.1016/0009-2614(92)85973-E |
0.241 |
|
| 2009 |
Estreicher SK, Backlund D, Gibbons TM, Doçaj A. Vibrational properties of impurities in semiconductors Modelling and Simulation in Materials Science and Engineering. 17. DOI: 10.1088/0965-0393/17/8/084006 |
0.238 |
|
| 2007 |
Backlund DJ, Estreicher SK. Theoretical study of the CiOi and IsiCiOi defects in Si Physica B: Condensed Matter. 401: 163-166. DOI: 10.1016/j.physb.2007.08.137 |
0.236 |
|
| 1997 |
Estreicher SK, Weber J. Photoluminescence centers associated with noble-gas impurities in silicon Materials Science Forum. 258: 605-610. |
0.235 |
|
| 2006 |
Estreicher SK, Sanati M. Dynamical matrices and free energies Topics in Applied Physics. 104: 95-114. DOI: 10.1007/11690320_5 |
0.235 |
|
| 2010 |
Estreicher SK, Backlund D, Gibbons TM. Theory of defects in Si and Ge: Past, present and recent developments Thin Solid Films. 518: 2413-2417. DOI: 10.1016/j.tsf.2009.09.131 |
0.235 |
|
| 2011 |
Carvalho A, Backlund DJ, Estreicher SK. Four-copper complexes in Si and the Cu-photoluminescence defect: A first-principles study Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/PhysRevB.84.155322 |
0.234 |
|
| 1992 |
Jones R, Latham CD, Heggie MI, Torres VJB, Oberg S, Estreicher SK. Ab initio calculations of the structure and dynamics of c60 and c3-60 Philosophical Magazine Letters. 65: 291-298. DOI: 10.1080/09500839208206000 |
0.234 |
|
| 2008 |
Estreicher SK, Sanati M, Gonzalez Szwacki N. Iron in silicon: Interactions with radiation defects, carbon, and oxygen Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/PhysRevB.77.125214 |
0.227 |
|
| 2000 |
Byberg JR, Bech Nielsen B, Fanciulli M, Estreicher SK, Fedders PA. Dimer of substitutional carbon in silicon studied by EPR and ab initio methods Physical Review B - Condensed Matter and Materials Physics. 61: 12939-12945. DOI: 10.1103/Physrevb.61.12939 |
0.226 |
|
| 2009 |
Estreicher SK, Backlund D, Gibbons TM. Non-equilibrium dynamics for impurities in semiconductors Physica B: Condensed Matter. 404: 4337-4340. DOI: 10.1016/j.physb.2009.09.024 |
0.225 |
|
| 2002 |
Estreicher SK. The H 2 molecule in semiconductors: An angel in GaAs, a devil in Si Acta Physica Polonica A. 102. |
0.225 |
|
| 2014 |
Kang B, Estreicher SK. Thermal conductivity of Si nanowires: A first-principles analysis of the role of defects Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/PhysRevB.89.155409 |
0.223 |
|
| 1989 |
Estreicher SK, Throckmorton L, Marynick DS. Hydrogen passivation of shallow acceptors and donors in c-Si: Comparisons and trends. Physical Review. B, Condensed Matter. 39: 13241-13251. PMID 9948225 DOI: 10.1103/Physrevb.39.13241 |
0.222 |
|
| 2006 |
Sanati M, Estreicher SK. Boron-oxygen complexes in Si Physica B: Condensed Matter. 376: 133-136. DOI: 10.1016/j.physb.2005.12.035 |
0.221 |
|
| 2003 |
McAfee JL, Estreicher SK. Structural and vibrational properties of Cs and {C s,H,H} complexes in Si Physica B: Condensed Matter. 340: 637-640. DOI: 10.1016/j.physb.2003.09.159 |
0.221 |
|
| 2016 |
Bebek MB, Stanley CM, Gibbons TM, Estreicher SK. Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping. Scientific Reports. 6: 32150. PMID 27535463 DOI: 10.1038/srep32150 |
0.219 |
|
| 2006 |
Estreicher SK, Sanati M. Predicting the energetics of defects at T>0 K Physica B: Condensed Matter. 376: 940-944. DOI: 10.1016/j.physb.2005.12.234 |
0.213 |
|
| 1994 |
Maric DM, Roberson MA, Estreicher SK. Relative stability of HT vs. H* and H2T vs. H*2 in c-C, Si, Ge, and α-Sn and their consequences Materials Science Forum. 143: 1245-1250. |
0.212 |
|
| 2005 |
Sanati M, Estreicher SK. Temperature and sample dependence of the binding free energies of complexes in crystals: The case of acceptor-oxygen complexes in Si Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/PhysRevB.72.165206 |
0.212 |
|
| 2001 |
Lowther JE, Estreicher SK, Temkin H. Nitrogen-related complexes in gallium arsenide Applied Physics Letters. 79: 200-202. DOI: 10.1063/1.1383280 |
0.207 |
|
| 2011 |
Gibbons TM, Kang B, Estreicher SK, Carbogno C. Thermal conductivity of Si nanostructures containing defects: Methodology, isotope effects, and phonon trapping Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/PhysRevB.84.035317 |
0.206 |
|
| 2005 |
Davies G, Hayama S, Hao S, Coutinho J, Estreicher SK, Sanati M, Itoh KM. Lattice isotope effects on the widths of optical transitions in silicon Journal of Physics Condensed Matter. 17. DOI: 10.1088/0953-8984/17/22/008 |
0.206 |
|
| 1983 |
Estreicher S, Meier PF. PARAMETRIZATION OF THE SELF-CONSISTENTLY CALCULATED ELECTRONIC DENSITIES AROUND A PROTON OF JELLIUM Nato Conference Series, (Series) 6: Materials Science. 6: 299-305. |
0.206 |
|
| 2008 |
Szwacki NG, Sanati M, Estreicher SK. Two FeH pairs in n -type Si and their implications: A theoretical study Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/PhysRevB.78.113202 |
0.203 |
|
| 2000 |
Hourahine B, Jones R, Safonov AN, Öberg S, Briddon PR, Estreicher SK. Identification of the hexavacancy in silicon with the B804 optical center Physical Review B - Condensed Matter and Materials Physics. 61: 12594-12597. |
0.202 |
|
| 1994 |
Estreicher SK. Theoretical and μSR studies related to hydrogen in compound semiconductors Materials Science Forum. 148: 349-392. |
0.202 |
|
| 2005 |
Estreicher SK, West D, Sanati M. Cu0*: A metastable configuration of the {Cus,Cui} pair in Si Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.121201 |
0.201 |
|
| 1981 |
Estreicher S, Denison AB, Meier PF. Effects of zero-point motion on the hyperfine field at the muon Hyperfine Interactions. 8: 601-604. DOI: 10.1007/Bf01037532 |
0.2 |
|
| 2007 |
Sanati M, Estreicher SK. First-principles study of iron and iron pairs in Si Physica B: Condensed Matter. 401: 105-108. DOI: 10.1016/j.physb.2007.08.123 |
0.199 |
|
| 2004 |
Sanati M, Estreicher SK, Cardona M. Isotopic dependence of the heat capacity of c-C, Si, and Ge: An ab initio calculation Solid State Communications. 131: 229-233. DOI: 10.1016/j.ssc.2004.04.043 |
0.198 |
|
| 1997 |
Hastings JL, Estreicher SK, Fedders PA. Vacancy aggregates in silicon Materials Science Forum. 258: 509-514. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.509 |
0.196 |
|
| 1997 |
Hastings JL, Estreicher SK, Fedders PA. Vacancy aggregates in silicon Materials Science Forum. 258: 509-514. |
0.196 |
|
| 2004 |
Estreicher SK. First-principles theory of copper in silicon Materials Science in Semiconductor Processing. 7: 101-111. DOI: 10.1016/j.mssp.2004.06.004 |
0.195 |
|
| 2014 |
Estreicher SK, Gibbons TM, Kang B, Bebek MB. Phonons and defects in semiconductors and nanostructures: Phonon trapping, phonon scattering, and heat flow at heterojunctions Journal of Applied Physics. 115. DOI: 10.1063/1.4838059 |
0.195 |
|
| 2012 |
Estreicher SK. Vibrational dynamics of impurities in semiconductors: Phonon trapping and isotope effects Materials Science Forum. 725: 203-208. DOI: 10.4028/www.scientific.net/MSF.725.203 |
0.192 |
|
| 2008 |
Backlund DJ, Estreicher SK. C4 defect and its precursors in Si: First-principles theory Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/PhysRevB.77.205205 |
0.192 |
|
| 1992 |
Myers SM, Baskes MI, Birnbaum HK, Corbett JW, Deleo GG, Estreicher SK, Haller EE, Jena P, Johnson NM, Kirchheim R, Pearton SJ, Stavola MJ. Hydrogen interactions with defects in crystalline solids Reviews of Modern Physics. 64: 559-617. DOI: 10.1103/Revmodphys.64.559 |
0.188 |
|
| 2015 |
Estreicher SK, Gibbons TM, Bebek MB. Thermal phonons and defects in semiconductors: The physical reason why defects reduce heat flow, and how to control it Journal of Applied Physics. 117. DOI: 10.1063/1.4913826 |
0.187 |
|
| 1999 |
Estreicher SK, Hastings JL, Feeders PA. Radiation-Induced Formation of H2* in Silicon Physical Review Letters. 82: 815-818. |
0.185 |
|
| 2003 |
Estreicher SK, West D, Goss J, Knack S, Weber J. First-principles calculations of pseudolocal vibrational modes: The case of Cu and Cu pairs in Si Physical Review Letters. 90. |
0.184 |
|
| 2007 |
West D, Estreicher SK. Isotope dependence of the vibrational lifetimes of light impurities in Si from first principles Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.075206 |
0.178 |
|
| 1994 |
Estreicher SK, Jones R. Passivation and reactivation of {H,P} pairs in Si Materials Science Forum. 143: 1215-1220. |
0.174 |
|
| 1991 |
Estreicher SK, Seager CH, Anderson RA. Bistability of donor-hydrogen complexes in silicon: A mechanism for debonding Applied Physics Letters. 59: 1773-1775. DOI: 10.1063/1.106196 |
0.173 |
|
| 1986 |
Estreicher S, Ray AK, Fry JL, Marynick DS. Estreicher et al. responds. Physical Review Letters. 57: 3301. PMID 10034014 DOI: 10.1103/Physrevlett.57.3301 |
0.172 |
|
| 2013 |
Lindroos J, Fenning DP, Backlund DJ, Verlage E, Gorgulla A, Estreicher SK, Savin H, Buonassisi T. Nickel: A very fast diffuser in silicon Journal of Applied Physics. 113. DOI: 10.1063/1.4807799 |
0.167 |
|
| 2006 |
West D, Estreicher SK. First-principles calculations of vibrational lifetimes and decay channels: Hydrogen-related modes in Si Physical Review Letters. 96. DOI: 10.1103/Physrevlett.96.115504 |
0.163 |
|
| 2006 |
Kohli KK, Davies G, Vinh NQ, West D, Estreicher SK, Gregorkiewicz T, Izeddin I, Itoh KM. Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 253: 200-204. DOI: 10.1016/J.Nimb.2006.10.055 |
0.161 |
|
| 1994 |
Estreicher SK, Jones R. {H,P}0↔{H,P}+ transitions: A new look at donor-hydrogen pairs in Si Applied Physics Letters. 64: 1670-1672. DOI: 10.1063/1.111826 |
0.16 |
|
| 2003 |
Estreicher SK. Defect theory: Elusive state-of-the-art Materials Today. 6: 26-35. DOI: 10.1016/S1369-7021(03)00631-X |
0.16 |
|
| 2006 |
Pereira RN, Bech Nielsen B, Stavola M, Sanati M, Estreicher SK, Mizuta M. Local vibrational modes of hydrogen in GaN: Observation and theory Physica B: Condensed Matter. 376: 464-467. DOI: 10.1016/J.Physb.2005.12.119 |
0.154 |
|
| 1985 |
Estreicher S, Estle TL. Possible mechanisms for orthorhombic Jahn-Teller distortions of orbital triplets Physical Review B. 31: 5616-5627. DOI: 10.1103/PhysRevB.31.5616 |
0.143 |
|
| 1995 |
Seager CH, Anderson RA, Estreicher SK. Comment on "Inverted order of acceptor and donor levels of monatomic hydrogen in silicon", Physical Review Letters. 74: 4565. DOI: 10.1103/PhysRevLett.74.4565 |
0.138 |
|
| 2015 |
Gibbons TM, Bebek MB, Kang B, Stanley CM, Estreicher SK. Phonon-phonon interactions: First principles theory Journal of Applied Physics. 118. DOI: 10.1063/1.4929452 |
0.109 |
|
| 2006 |
Drabold DA, Estreicher SK. Defect theory: An armchair history Topics in Applied Physics. 104: 11-28. DOI: 10.1007/11690320_2 |
0.109 |
|
| 1986 |
Estreicher S, Marynick DS. Comment on "identification of anomalous muonium in semiconductors as a vacancy-associated center", Physical Review Letters. 56: 1511. DOI: 10.1103/PhysRevLett.56.1511 |
0.106 |
|
| 2005 |
Davies G, Hayama S, Hao S, Bech Nielsen B, Coutinho J, Sanati M, Estreicher SK, Itoh KM. Host isotope effects on midinfrared optical transitions in silicon Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/PhysRevB.71.115212 |
0.101 |
|
| 2005 |
Kremer RK, Cardona M, Schmitt E, Blumm J, Estreicher SK, Sanati M, Bockowski M, Grzegory I, Suski T, Jezowski A. Heat capacity of α-GaN: Isotope effects Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.075209 |
0.092 |
|
| 2009 |
Gibbons TM, Estreicher SK. Impact of impurities on the thermal conductivity of semiconductor nanostructures: First-principles theory Physical Review Letters. 102. DOI: 10.1103/PhysRevLett.102.255502 |
0.091 |
|
| 2006 |
Myers SM, Wright AF, Sanati M, Estreicher SK. Theoretical properties of the N vacancy in p -type GaN(Mg,H) at elevated temperatures Journal of Applied Physics. 99. DOI: 10.1063/1.2195894 |
0.085 |
|
| 2016 |
Estreicher SK, Gibbons TM, Bebek MB, Cardona AL. Heat flow and defects in semiconductors: Beyond the phonon scattering assumption Solid State Phenomena. 242: 335-343. DOI: 10.4028/www.scientific.net/SSP.242.335 |
0.079 |
|
| 2006 |
Wright AF, Myers SM, Sanati M, Estreicher SK. Formation of VNH and MgV NH in p-type GaN(Mg,H) Physica B: Condensed Matter. 376: 477-481. DOI: 10.1016/j.physb.2005.12.122 |
0.074 |
|
| 2005 |
Estreicher S. Geometry does not a theory of employment make Employee Responsibilities and Rights Journal. 17: 123-126. DOI: 10.1007/s10672-005-3892-2 |
0.053 |
|
| 1997 |
Estreicher S. Predispute agreements to arbitrate statutory employment claims New York University Law Review. 72: 1344-1375. |
0.051 |
|
| 2006 |
Drabold DA, Estreicher SK. Topics in Applied Physics: Preface Topics in Applied Physics. 104: VII-VIII. |
0.05 |
|
| 2013 |
Estreicher SK. A brief history of wine in Spain European Review. 21: 209-239. DOI: 10.1017/S1062798712000373 |
0.05 |
|
| 2004 |
Sanati M, Estreicher SK. Specific heat and entropy of GaN Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/28/L02 |
0.047 |
|
| 2014 |
Estreicher S. 'Easy in, easy out': A future for U.S. Workplace representation Minnesota Law Review. 98: 1615-1636. |
0.038 |
|
| 2014 |
Estreicher SK. A brief history of wine in South Africa European Review. 22: 504-537. DOI: 10.1017/S1062798714000301 |
0.037 |
|
| 2004 |
Estreicher S. Negotiating the people's capital Journal of Labor Research. 25: 191-197. |
0.034 |
|
| 2011 |
Chen L, Estreicher S. Recent labor unrest may bring more challenges ahead for foreign companies operating or investing in China China Business Review. 38. |
0.03 |
|
| 2006 |
Brannon M, Estreicher S, Claiborne L. The Speed of Color Apparel. 47: 35-38. |
0.029 |
|
| 1996 |
Estreicher S. Freedom of contract and labor law reform: Opening up the possibilities for value-added unionism New York University Law Review. 71: 827-849. |
0.022 |
|
| 2014 |
Cavallini A, Estreicher SK. Preface and acknowledgments Journal of Applied Physics. 115. DOI: 10.1063/1.4838095 |
0.022 |
|
| 2005 |
Sherwyn D, Estreicher S, Heise M. Assessing the case for employment arbitration: A new path for empirical research Stanford Law Review. 57: 1557-1591. |
0.022 |
|
| 2007 |
Estreicher SK, Holtz MW, Seager CH, Wright AF. Editor Physica B: Condensed Matter. 401. DOI: 10.1016/j.physb.2007.08.100 |
0.022 |
|
| 2007 |
Estreicher S. The life of a color - From trend to consumer International Conference and Exhibition of the American Association of Textile Chemists and Colorists, Aatcc Ic and E 2007. 192-196. |
0.017 |
|
| 2002 |
Estreicher S, Siegel R. Partial strikes under the railway labor act: The need for a doctrine of unprotected concerted activity Journal of Labor Research. 23: 319-328. |
0.014 |
|
| 2005 |
Cardona M, Kremer RK, Sanati M, Estreicher SK, Anthony TR. Measurements of the heat capacity of diamond with different isotopic compositions Solid State Communications. 133: 465-468. DOI: 10.1016/j.ssc.2004.11.047 |
0.012 |
|
| 2015 |
Estreicher S, Bodie MT, Harper MC, Schwab SJ. Foreword: The Restatement of Employment Law project Cornell Law Review. 100: 1245-1254. |
0.01 |
|
| 2012 |
Estreicher S, Eigen ZJ. The forum for adjudication of employment disputes Research Handbook On the Economics of Labor and Employment Law. 409-423. DOI: 10.4337/9781849801010.00021 |
0.01 |
|
| 2006 |
Estreicher S. Disunity within the house of labor: Change to win or to stay the course? Journal of Labor Research. 27: 505-511. DOI: 10.1007/s12122-006-1017-9 |
0.01 |
|
| 2002 |
Estreicher S. Foreword: Human behavior and the economic paradigm at work New York University Law Review. 77: 1-5. |
0.01 |
|
| 2002 |
Estreicher S, Bodie MT. Review essay - Administrative delay at the NLRB: Some modest proposals Journal of Labor Research. 23: 87-104. |
0.01 |
|
| 2001 |
Estreicher S. Strategy for labor Journal of Labor Research. 22: 579-580. |
0.01 |
|
| 2001 |
Estreicher S, Bodie MT. Administrative delay at the NLRB: Some modest proposals Journal of Labor Research. 23: 103-104. |
0.01 |
|
| 2000 |
Estreicher S. Deregulating union democracy Journal of Labor Research. 21: 247-263. |
0.01 |
|
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