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Peter J. McNulty - Publications

Affiliations: 
Clemson University, Clemson, SC, United States 
Area:
Elementary Particles and High Energy Physics, Electronics and Electrical Engineering
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52 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Reed RA, Weller RA, Akkerman A, Barak J, Culpepper W, Duzellier S, Foster C, Gaillardin M, Hubert G, Jordan T, Jun I, Koontz S, Lei F, McNulty P, Mendenhall MH, et al. Anthology of the development of radiation transport tools as applied to single event effects Ieee Transactions On Nuclear Science. 60: 1876-1911. DOI: 10.1109/Tns.2013.2262101  0.369
2011 McNulty PJ, Poole KF, Scheick LZ, Yow S. Role of process variation in the radiation response of FGMOS devices Ieee Transactions On Nuclear Science. 58: 2673-2679. DOI: 10.1109/Tns.2011.2172987  0.352
2006 McNulty PJ, Poole KF, Crissler M, Reneau J, Cellere G, Paccagnella A, Visconti A, Bonanomi M, Stroebel D, Fennell M, Perez R. Sensitivity and dynamic range of FGMOS dosemeters. Radiation Protection Dosimetry. 122: 460-2. PMID 17387126 DOI: 10.1093/Rpd/Ncl487  0.344
2006 Cellere G, Paccagnella A, Visconti A, Bonanomi M, McNulty PJ. Single-ion dosemeter based on floating gate memories. Radiation Protection Dosimetry. 122: 457-9. PMID 17132673 DOI: 10.1093/Rpd/Ncl394  0.343
2006 Chabane H, Vaillé JR, Barelaud B, Wrobel F, Calzavara Y, McNulty PJ, Decossas JL, Garcia P, Dusseau L, Boch J, Saigné F. Measurement of the energy depositions in a silicon volume by 14 MeV neutrons Ieee Transactions On Nuclear Science. 53: 3707-3712. DOI: 10.1109/Tns.2006.885008  0.433
2004 McNulty PJ, Kinnison JD, Maurer RH, Roth DR, Reed RA, Abdel-Kader WG. Energy-deposition events measured by the CRRES PHA experiment Ieee Transactions On Nuclear Science. 51: 3381-3387. DOI: 10.1109/Tns.2004.839241  0.677
2003 Kinnison JD, Maurer R, Roth DR, McNulty PJ, Abdel-Kader WG. Neutron-Induced Pion Production in Silicon-Based Circuits Ieee Transactions On Nuclear Science. 50: 2251-2255. DOI: 10.1109/Tns.2003.821385  0.682
2002 McNulty PJ, Yow S, Scheick LZ, Abdel-Kader WG. Charge removal from FGMOS floating gates Ieee Transactions On Nuclear Science. 49: 3016-3021. DOI: 10.1109/Tns.2002.805975  0.378
2002 Reed RA, Marshall PW, Kim HS, McNulty PJ, Fodness B, Jordan TM, Reedy R, Tabbert C, Liu MST, Heikkila W, Buchner S, Ladbury R, LaBel KA. Evidence for angular effects in proton-induced single-event upsets Ieee Transactions On Nuclear Science. 49: 3038-3044. DOI: 10.1109/Tns.2002.805446  0.461
2001 McNulty PJ, Scheick LZ, Yow S, Campbell AB, Savage MW. Single-chip dosimeters to accompany photometric systems flown in space Ieee Transactions On Nuclear Science. 48: 2039-2042. DOI: 10.1109/23.983169  0.372
2000 Scheick LZ, McNulty PJ, Roth DR. Measurement of the effective sensitive volume of FAMOS cells of an ultraviolet erasable programmable read-only memory Ieee Transactions On Nuclear Science. 47: 2428-2434. DOI: 10.1109/23.903788  0.373
2000 McNulty PJ, Scheick LZ, Roth DR, Davis MG, Tortora MRS. First failure predictions for EPROMs of the type flown on the MPTB satellite Ieee Transactions On Nuclear Science. 47: 2237-2243. DOI: 10.1109/23.903759  0.325
1999 Scheick LZ, McNulty PJ, Roth DR, Davis MG, Mason BE. Measurements of dose with individual FAMOS transistors Ieee Transactions On Nuclear Science. 46: 1751-1756. DOI: 10.1109/23.819149  0.397
1999 Roth DR, Maurer RH, Kinnison JD, McNulty PJ, Savage MW. Charged particle and neutron solid state detectors - a comparison Ieee Nuclear Science Symposium and Medical Imaging Conference. 1: 694-697.  0.66
1998 Savage MW, McNulty PJ, Roth DR, Foster CC. Possible role for secondary particles in proton-induced single event upsets of modern devices Ieee Transactions On Nuclear Science. 45: 2745-2751. DOI: 10.1109/23.736523  0.403
1998 Scheick LZ, McNulty PJ, Roth DR. Dosimetry based on the erasure of floating gates in the natural radiation environments in space Ieee Transactions On Nuclear Science. 45: 2681-2688. DOI: 10.1109/23.736515  0.432
1998 McNulty PJ, Savage MW, Roth DR, Foster CC. Proton SEU rate predictions Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 570-575.  0.365
1997 Reed RA, Carts MA, Marshall PW, Marshall CJ, Musseau O, McNulty PJ, Roth DR, Buchner S, Melinger J, Corbière T. Heavy ion and proton-induced single event multiple upset Ieee Transactions On Nuclear Science. 44: 2224-2229. DOI: 10.1109/23.659039  0.401
1996 McNulty PJ. Proton interactions in microelectronic systems flown in the low-earth orbits typical of space station Sae Technical Papers. DOI: 10.4271/961615  0.389
1996 McNulty PJ. Single-event effects experienced by astronauts and microelectronic circuits flown in space Ieee Transactions On Nuclear Science. 43: 475-482. DOI: 10.1109/23.490894  0.394
1995 Reed RA, McNulty PJ. Effects of Geometry on the Proton Seu Dependence on the Angle of Incidence Ieee Transactions On Nuclear Science. 42: 1803-1808. DOI: 10.1109/23.488782  0.379
1994 McNulty PJ, Stassinopoulos EG. Uncertainties in radiation effect predictions for the natural radiation environments of space. Advances in Space Research : the Official Journal of the Committee On Space Research (Cospar). 14: 947-57. PMID 11540040 DOI: 10.1016/0273-1177(94)90561-4  0.304
1994 Reed RA, McNulty PJ, Beauvais WJ, Abdel Kader WG, Stassinopoulos EG, Barth J. A simple algorithm for predicting proton seu rates in space compared to the rates measured on the crres satellite Ieee Transactions On Nuclear Science. 41: 2389-2395. DOI: 10.1109/23.340592  0.417
1994 Reed RA, McNulty PJ, Abdel Kader WG. Implications Of Angle Of Incidence In Seu Testing Of Modern Circuits Ieee Transactions On Nuclear Science. 41: 2049-2054. DOI: 10.1109/23.340541  0.45
1994 Chen L, McNulty PJ, Larson S, Thompson DA, Miller TL, Lee T. Dark Current Induced In Large Ccd Arrays By Proton-Induced Elastic Reactions And Single To Multiple-Event Spallation Reactions Ieee Transactions On Nuclear Science. 41: 1992-1998. DOI: 10.1109/23.340534  0.409
1994 Dale CJ, Chen L, McNulty PJ, Marshall PW, Burke EA. A Comparison of Monte Carlo and Analytic Treatments of Displacement Damage in Si Microvolumes Ieee Transactions On Nuclear Science. 41: 1974-1983. DOI: 10.1109/23.340532  0.305
1994 McNulty PJ, Abdel-Kader WG, Farrell GE. Proton induced spallation reactions Radiation Physics and Chemistry. 43: 139-149. DOI: 10.1016/0969-806X(94)90207-0  0.411
1993 Roth DR, McNulty PJ, Abdel-Kader WG, Strauss L, Stassinopoulos EG. Monitoring SEU Parameters at Reduced Bias Ieee Transactions On Nuclear Science. 40: 1721-1724. DOI: 10.1109/23.273487  0.409
1993 Reed RA, McNulty PJ, Beauvais WJ, Roth DR. Charge collection spectroscopy Ieee Transactions On Nuclear Science. 40: 1880-1887. DOI: 10.1109/23.273466  0.4
1993 McNulty PJ, Abdel-Kader WG, Beauvais WJ, Adams L, Daly EJ, Harboe-Sorensen R. Simple model for proton-induced latch-up Ieee Transactions On Nuclear Science. 40: 1947-1951. DOI: 10.1109/23.273459  0.471
1992 McNulty PJ, Beauvais WJ, Roth DR, Lynch JE. Microbeam analysis of MOS circuits First European Conference On Radiation and Its Effects On Devices and Systems - Radecs 91. 435-439. DOI: 10.1109/23.277532  0.358
1992 McNulty PJ, Beauvais WJ, Reed RA, Roth DR, Stassinopoulos EG, Brucker GJ. Charge collection at large angles of incidence Ieee Transactions On Nuclear Science. 39: 1622-1629. DOI: 10.1109/23.211344  0.384
1991 McNulty PJ, Mullen EG, Beauvais WJ, Ray KP, Abdel-Kader WG, El-Teleaty SS. Test of SEU Algorithms Against Preliminary CRRES Satellite Data Ieee Transactions On Nuclear Science. 38: 1642-1646. DOI: 10.1109/23.124157  0.458
1991 McNulty PJ, Beauvais WJ, Roth DR. Determination of SEU Parameters of NMOS and CMOS SRAMs Ieee Transactions On Nuclear Science. 38: 1463-1470. DOI: 10.1109/23.124133  0.393
1991 Normand E, Stapor WJ, McNulty P, Abdel-Kader WG, Yaktieen MH. Quantitative comparison of single event upsets induced by protons and neutrons (RAM devices) Ieee Transactions On Nuclear Science. 38: 1457-1462. DOI: 10.1109/23.124132  0.489
1991 Weatherford TR, Tran L, Stapor WJ, Petersen EL, Langworthy JB, McMorrow D, Abdel-Kader WG, McNulty PJ. Proton and heavy ion upsets in GaAs MESFET devices Ieee Transactions On Nuclear Science. 38: 1450-1456. DOI: 10.1109/23.124131  0.424
1991 El-Teleaty S, Abdel-Kader WG, McNulty PJ, Yaktieen MH. Charge collection in partially depleted GaAs test structures induced by alphas, heavy ions, and protons Journal of Applied Physics. 69: 475-480. DOI: 10.1063/1.347688  0.443
1991 McNulty PJ, Roth DR, Beauvais WJ, Abdel-Kader WG, Dinge DC. Comparison of the charge collecting properties of junctions and the SEU response of microelectronic circuits International Journal of Radiation Applications and Instrumentation. Part. 19: 929-938. DOI: 10.1016/1359-0189(91)90344-H  0.405
1991 McNulty PJ, Abdel-Kader WG, Lynch JE. Modeling charge collection and single event upsets in microelectronics Nuclear Inst. and Methods in Physics Research, B. 61: 52-60. DOI: 10.1016/0168-583X(91)95560-Z  0.394
1991 Abdel-Kader WG, El-Teleaty SS, McNulty PJ. Charge collection measurements and theoretical calculations for partially depleted silicon devices Nuclear Inst. and Methods in Physics Research, B. 56: 1246-1250. DOI: 10.1016/0168-583X(91)95143-2  0.432
1989 Yaktieen MH, McNulty PJ, Lynch JE, Roth DR, Salzman JF, Yuan JH. Charge collection and SEU sensitivity for Ga/As bipolar devices Ieee Transactions On Nuclear Science. 36: 2300-2304. DOI: 10.1109/23.45439  0.45
1989 El-Teleaty S, McNulty PJ, Abdel-Kader WG, Beauvais WJ. Soft fails in microelectronic circuits due to proton-induced nuclear reactions in material surrounding the SEU-sensitive volume Nuclear Inst. and Methods in Physics Research, B. 40: 1300-1305. DOI: 10.1016/0168-583X(89)90644-7  0.358
1987 Abdel-Kader WG, McNulty PJ, El-Teleaty S, Lynch JE, Khondker AN. Estimating the dimensions of the seu-sensitive volume Ieee Transactions On Nuclear Science. 34: 1300-1304. DOI: 10.1109/TNS.1987.4337469  0.316
1987 Abdel-Kader WG, McNulty PJ, El-Teleaty S, Lynch JE, Khondker AN. ESTIMATING THE DIMENSIONS OF THE SEU-SENSITIVE VOLUME Ieee Transactions On Nuclear Science.  0.355
1986 Bisgrove JM, Lynch JE, McNulty PJ, Abdel-Kader WG, Kletnieks V, Kolasinski WA. COMPARISON OF SOFT ERRORS INDUCED BY HEAVY IONS AND PROTONS Ieee Transactions On Nuclear Science. DOI: 10.1109/TNS.1986.4334643  0.312
1986 Bisgrove JM, Lynch JE, McNulty PJ, Abdel-Kader WG, Kletnieks V, Kolasinski WA. COMPARISON OF SOFT ERRORS INDUCED BY HEAVY IONS AND PROTONS Ieee Transactions On Nuclear Science.  0.312
1985 McNulty PJ, Abdel-Kader WG, Bisgrove JM. METHODS FOR CALCULATING SEU RATES FOR BIPOLAR AND NMOS CIRCUITS Ieee Transactions On Nuclear Science. DOI: 10.1109/TNS.1985.4334090  0.306
1983 Teleaty SE, Farrell GE, McNulty PJ. Charge-deposition spectra in thin slabs of silicon induced by energetic protons Ieee Transactions On Nuclear Science. 30: 4394-4397. DOI: 10.1109/TNS.1983.4333144  0.372
1982 Farrell GE, McNulty PJ. Microdosimetric aspects of proton-induced nuclear reactions in thin layers of silicon Ieee Transactions On Nuclear Science. 29: 2012-2016. DOI: 10.1109/TNS.1982.4336488  0.317
1981 McNulty PJ, Farrell GE, Tucker WP. Proton-induced nuclear reactions in silicon Ieee Transactions On Nuclear Science. 28: 4007-4012. DOI: 10.1109/TNS.1981.4335664  0.373
1980 McNulty PJ, Farrell GE, Wyatt RC, Rothwell PL, Filz RCA, Bradford JN. Upset Phenomena Induced by Energetic Protons and Electrons Ieee Transactions On Nuclear Science. 27: 1516-1522. DOI: 10.1109/TNS.1980.4331062  0.307
1977 McNulty PJ, Farrell GE, Filz RC, Schimmerling W, Vosburgh KG. Threshold pion production and multiplicity in heavy-ion collisions Physical Review Letters. 38: 1519-1522. DOI: 10.1103/PhysRevLett.38.1519  0.305
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