Year |
Citation |
Score |
2002 |
Jiang N, Eustis TJ, Cai J, Ponce F, Spence J, Silcox J. Polarity determination by atomic location by channeling-enhanced microanalysis Applied Physics Letters. 80: 389-391. DOI: 10.1063/1.1433919 |
0.483 |
|
2000 |
Eustis TJ, Silcox J, Murphy MJ, Schaff WJ. Evidence From EELS of Oxygen in the Nucleation Layer of a MBE Grown III-N HEMT Mrs Internet Journal of Nitride Semiconductor Research. 5: 188-194. DOI: 10.1557/S1092578300004269 |
0.549 |
|
2000 |
Schaff WJ, Wu H, Praharaj CJ, Murphy M, Eustis T, Foutz B, Ambacher O, Eastman LF. GaN/SiC heterojunction bipolar transistors Solid-State Electronics. 44: 259-264. DOI: 10.1016/S0038-1101(99)00232-4 |
0.417 |
|
1999 |
Murphy MJ, Foutz BE, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Dimitrov R, Stutzmann M, Rieger W. Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 4: 840-845. DOI: 10.1557/S1092578300003501 |
0.408 |
|
1999 |
Eustis TJ, Silcox J, Murphy MJ, Schaff WJ. Evidence from EELS of Oxygen in the Nucleation Layer of a MBE grown III-N HEMT Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W3.31 |
0.549 |
|
1999 |
Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Smart J, Shealy JR, Eastman LF, Eustis TJ. Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures Journal of Vacuum Science & Technology B. 17: 1252-1254. DOI: 10.1116/1.590733 |
0.502 |
|
1999 |
Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Silcox J, Dimitrov R, Stutzmann M. High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 75: 3653-3655. DOI: 10.1063/1.125418 |
0.552 |
|
1998 |
Murphy MJ, Foutz BE, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Dimitrov R, Stutzmann M, Rieger W. Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G8.4 |
0.408 |
|
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