| Year |
Citation |
Score |
| 2008 |
Breed AA, Roenker KP. Comparison of the scaling characteristics of nanoscale SOI N-channel multiple-gate MOSFETs Analog Integrated Circuits and Signal Processing. 56: 135-141. DOI: 10.1007/S10470-007-9129-6 |
0.308 |
|
| 2005 |
Sampathkumaran R, Roenker KP. Effects of self-heating on the microwave performance of SiGe HBTs Solid-State Electronics. 49: 1292-1296. DOI: 10.1016/J.Sse.2005.05.008 |
0.372 |
|
| 2004 |
Srivastava S, Roenker KP. Numerical modeling study of the InP/InGaAs uni-travelling carrier photodiode Solid-State Electronics. 48: 461-470. DOI: 10.1016/J.Sse.2003.08.004 |
0.42 |
|
| 2002 |
Breed A, Roenker KP, Todorova D. Numerical modeling of parasitic barrier formation at the SiGe/Si heterojunction due to p-n junction displacement Solid-State Electronics. 46: 2199-2208. DOI: 10.1016/S0038-1101(02)00225-3 |
0.358 |
|
| 2000 |
Mushini P, Roenker KP. Simulation study of high injection effects and parasitic barrier formation in SiGe HBTs operating at high current densities Solid-State Electronics. 44: 2239-2246. DOI: 10.1016/S0038-1101(00)00201-X |
0.46 |
|
| 1999 |
Oh KW, Ahn CH, Roenker KP. Flip-chip packaging using micromachined conductive polymer bumps and alignment pedestals for MOEMS Ieee Journal On Selected Topics in Quantum Electronics. 5: 119-126. DOI: 10.1109/2944.748115 |
0.314 |
|
| 1999 |
Datta S, Roenker KP, Cahay MM, Stanchina WE. Implications of hole vs electron transport properties for high speed Pnp heterojunction bipolar transistors Solid-State Electronics. 43: 73-79. DOI: 10.1016/S0038-1101(98)00237-8 |
0.411 |
|
| 1998 |
Oh KW, Ahn CH, Roenker KP. Optical characteristics of GaAs MSM photodetectors flip-chip bonded upon micromirrors using micromachined conductive polymer bumps Proceedings of Spie. 3513: 50-58. DOI: 10.1117/12.324282 |
0.301 |
|
| 1998 |
Morrison CB, Glinz AP, Zhu Z, Bechtel JH, Frimel SM, Roenker KP. Wide-area thin film metal-semiconductor-metal photodetectors for lidar applications High-Power Lasers and Applications. 3287: 40-47. DOI: 10.1117/12.304501 |
0.397 |
|
| 1996 |
Kumar T, Cahay M, Roenker K. Trends in the emitter-base bias dependence of the average base transit time through abrupt heterojunction bipolar transistors Journal of Applied Physics. 80: 5478-5482. DOI: 10.1063/1.362737 |
0.336 |
|
| 1995 |
Song CK, Roenker KP. Novel pulse-mode neural circuits based on an algaas-gaas multi-quantum well diode Japanese Journal of Applied Physics. 34: 1043-1049. DOI: 10.1143/Jjap.34.1043 |
0.433 |
|
| 1995 |
Kumar T, Cahay M, Shi S, Roenker K, Stanchina WE. Limit of validity of the thermionic-field-emission treatment of electron injection across emitter-base junctions in abrupt heterojunction bipolar transistors Journal of Applied Physics. 77: 5786-5792. DOI: 10.1063/1.359224 |
0.329 |
|
| 1995 |
Song C, Roenker KP. A neuron-like Multi-Quantum-Well Injection-Mode Device for electronic pulse-mode circuits Solid-State Electronics. 38: 1953-1967. DOI: 10.1016/0038-1101(95)00018-O |
0.52 |
|
| 1994 |
Song C, Roenker KP. Novel heterostructure device for electronic pulse-mode neural circuits. Ieee Transactions On Neural Networks / a Publication of the Ieee Neural Networks Council. 5: 663-5. PMID 18267839 DOI: 10.1109/72.298236 |
0.418 |
|
| 1994 |
Song CK, Roenker KP. Novel Pulse-Mode Neural Circuits Based on an AlGaAs-GaAs Multi-Quantum Well Diode The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1994.Pc-4-3 |
0.309 |
|
| 1992 |
Song C, Roenker KP. S‐type switching characteristics from transverse transport in multiquantum well diodes Journal of Applied Physics. 72: 4417-4421. DOI: 10.1063/1.352208 |
0.368 |
|
| 1988 |
Hof TE, Morthorst TJ, Roenker KP. Measurement of generation lifetime in thin silicon layers Solid-State Electronics. 31: 937-944. DOI: 10.1016/0038-1101(88)90048-2 |
0.309 |
|
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