| Year |
Citation |
Score |
| 2003 |
Wooten F. Structure, odd lines and topological entropy of disorder of amorphous silicon. Correction Acta Crystallographica Section A. 59: 286-286. DOI: 10.1107/S0108767303007037 |
0.335 |
|
| 2002 |
Wooten F. Structure, odd lines and topological entropy of disorder of amorphous silicon Acta Crystallographica Section A. 58: 346-351. PMID 12089457 DOI: 10.1107/S0108767302006669 |
0.353 |
|
| 1999 |
Allen PB, Feldman JL, Fabian J, Wooten F. Diffusons, locons and propagons : character of atomic vibrations in amorphous Si Philosophical Magazine Part B. 79: 1715-1731. DOI: 10.1080/13642819908223054 |
0.361 |
|
| 1996 |
Dinh LN, Chase LL, Balooch M, Siekhaus WJ, Wooten F. Optical properties of passivated Si nanocrystals and SiOx nanostructures. Physical Review. B, Condensed Matter. 54: 5029-5037. PMID 9986467 DOI: 10.1103/Physrevb.54.5029 |
0.381 |
|
| 1995 |
Djordjević BR, Thorpe MF, Wooten F. Computer model of tetrahedral amorphous diamond Physical Review B. 52: 5685-5689. DOI: 10.1103/Physrevb.52.5685 |
0.408 |
|
| 1993 |
Feldman JL, Kluge MD, Allen PB, Wooten F. Thermal conductivity and localization in glasses: Numerical study of a model of amorphous silicon. Physical Review. B, Condensed Matter. 48: 12589-12602. PMID 10007627 DOI: 10.1103/Physrevb.48.12589 |
0.372 |
|
| 1993 |
Weaire D, Hobbs D, Morgan GJ, Holender JM, Wooten F. New applications of the equation-of-motion method: Optical properties Journal of Non-Crystalline Solids. 877-880. DOI: 10.1016/0022-3093(93)91137-R |
0.415 |
|
| 1991 |
Feldman JL, Broughton JQ, Wooten F. Elastic properties of amorphous Si and derived Debye temperatures and Grüneisen parameters: Model calculation. Physical Review. B, Condensed Matter. 43: 2152-2158. PMID 9997485 DOI: 10.1103/Physrevb.43.2152 |
0.387 |
|
| 1990 |
Sakamoto S, Yonezawa F, Wooten F, Nosé S, Hori M. Molecular orbital study for electronic structures of metallic microclusters Journal of Non-Crystalline Solids. 281-284. DOI: 10.1016/0022-3093(90)90932-C |
0.344 |
|
| 1989 |
Wooten F, Weaire D. A computer-generated model of the crystalline/amorphous interface in silicon Journal of Non-Crystalline Solids. 114: 681-683. DOI: 10.1016/0022-3093(89)90689-3 |
0.395 |
|
| 1986 |
Winer K, Wooten F. Vibrational Properties of Metastable Phases of Si and Ge Physica Status Solidi B-Basic Solid State Physics. 136: 519-527. DOI: 10.1002/Pssb.2221360216 |
0.413 |
|
| 1985 |
Wooten F, Winer K, Weaire D. Computer generation of structural models of amorphous Si and Ge. Physical Review Letters. 54: 1392-1395. PMID 10031020 DOI: 10.1103/Physrevlett.54.1392 |
0.383 |
|
| 1985 |
Hickey BJ, Morgan GJ, Weaire DL, Wooten F. The density of states in amorphous Si Journal of Non-Crystalline Solids. 67-70. DOI: 10.1016/0022-3093(85)90612-X |
0.396 |
|
| 1985 |
Wooten F, Fuller GA, Winer K, Weaire D. Computer generation of structural models of amorphous Si: Studies of nucleation of crystallization Journal of Non-Crystalline Solids. 75: 45-50. DOI: 10.1016/0022-3093(85)90200-5 |
0.414 |
|
| 1984 |
Winer K, Wooten F. Structure and Vibrational Spectra of a Model of a-Si:H with Periodic Boundary Conditions Physica Status Solidi B-Basic Solid State Physics. 124: 473-480. DOI: 10.1002/Pssb.2221240204 |
0.379 |
|
| 1983 |
Winer K, Wooten F. Structure and vibrational spectra of a model of a-Si:H with periodic boundary conditions Journal of Non-Crystalline Solids. 193-196. DOI: 10.1016/0022-3093(83)90554-9 |
0.385 |
|
| 1980 |
Weaire D, Wooten F. A structural model for hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 495-500. DOI: 10.1016/0022-3093(80)90643-2 |
0.408 |
|
| 1979 |
Alward JF, Fong CY, Wooten F. Band Structures and optical properties of CdSn P 2 and CdSn As 2 Physical Review B. 19: 6337. DOI: 10.1103/Physrevb.19.6337 |
0.345 |
|
| 1975 |
Alward JF, Fong CY, El-Batanouny M, Wooten F. Band structures and optical properties of two transition-metal carbides—TiC and ZrC Physical Review B. 12: 1105-1117. DOI: 10.1103/Physrevb.12.1105 |
0.323 |
|
| 1975 |
Alward JF, Fong CY, El-Batanouny M, Wooten F. The d-p hybridized valence charge distribution in TiC Solid State Communications. 17: 1063-1065. DOI: 10.1016/0038-1098(75)90255-0 |
0.306 |
|
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