| Year |
Citation |
Score |
| 2020 |
Tiwari D, Alibhai D, Cherns D, Fermin DJ. Crystal and Electronic Structure of Bismuth Thiophosphate, BiPS4: An Earth-Abundant Solar Absorber Chemistry of Materials. 32: 1235-1242. DOI: 10.1021/Acs.Chemmater.9B04626 |
0.592 |
|
| 2020 |
Farhad SFU, Cherns D, Smith JA, Fox NA, Fermín DJ. Pulsed laser deposition of single phase n- and p-type Cu2O thin films with low resistivity Materials & Design. 193: 108848. DOI: 10.1016/J.Matdes.2020.108848 |
0.305 |
|
| 2019 |
Liu C, Heard P, Griffiths I, Cherns D, Flewitt P. Carbide Precipitation Associated with Carburisation of 9Cr-1Mo Steel in Hot CO2 Gas Materialia. 7: 100415. DOI: 10.1016/J.Mtla.2019.100415 |
0.314 |
|
| 2018 |
Soundararajah QY, Webster RF, Griffiths IJ, Novikov SV, Foxon CT, Cherns D. Composition and strain relaxation of InxGa1-xN graded core shell-nanorods. Nanotechnology. PMID 30010093 DOI: 10.1088/1361-6528/Aad38D |
0.353 |
|
| 2018 |
Farhad SFU, Webster RF, Cherns D. Electron microscopy and diffraction studies of pulsed laser deposited cuprous oxide thin films grown at low substrate temperatures Materialia. 3: 230-238. DOI: 10.1016/J.Mtla.2018.08.032 |
0.365 |
|
| 2017 |
Phan TL, Vincent R, Cherns D, Nghia NX. CVD PREPARED Mn-DOPED ZnO NANOWIRES Asean Journal On Science and Technology For Development. 24: 125-130. DOI: 10.29037/Ajstd.191 |
0.311 |
|
| 2016 |
Kattan NA, Griffiths IJ, Cherns D, Fermín DJ. Observation of antisite domain boundaries in Cu2ZnSnS4 by atomic-resolution transmission electron microscopy. Nanoscale. PMID 27405278 DOI: 10.1039/C6Nr04185J |
0.624 |
|
| 2016 |
Griffiths IJ, Cherns D, Albert S, Bengoechea-Encabo A, Sanchez MA, Calleja E, Schimpke T, Strassburg M. Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy Journal of Microscopy. 262: 167-170. PMID 26366483 DOI: 10.1111/Jmi.12285 |
0.377 |
|
| 2016 |
Tiwari D, Koehler T, Lin X, Harniman R, Griffiths I, Wang L, Cherns D, Klenk R, Fermin DJ. Cu2ZnSnS4 Thin Films Generated from a Single Solution Based Precursor: The Effect of Na and Sb Doping Chemistry of Materials. 28: 4991-4997. DOI: 10.1021/Acs.Chemmater.6B01499 |
0.314 |
|
| 2016 |
Le Boulbar ED, Edwards PR, Vajargah SH, Griffiths I, Gîrgel I, Coulon PM, Cherns D, Martin RW, Humphreys CJ, Bowen CR, Allsopp DWE, Shields PA. Structural and Optical Emission Uniformity of m-Plane InGaN Single Quantum Wells in Core-Shell Nanorods Crystal Growth and Design. 16: 1907-1916. DOI: 10.1021/Acs.Cgd.5B01438 |
0.372 |
|
| 2015 |
Webster RF, Soundararajah QY, Griffiths IJ, Cherns D, Novikov SV, Foxon CT. Microstructure of InxGa1-xN nanorods grown by molecular beam epitaxy Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/11/114014 |
0.379 |
|
| 2015 |
Webster RF, Cherns D, Kuball M, Jiang Q, Allsopp D. Electron microscopy of gallium nitride growth on polycrystalline diamond Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/11/114007 |
0.412 |
|
| 2015 |
Burton LA, Whittles TJ, Hesp D, Linhart WM, Skelton JM, Hou B, Webster RF, O'Dowd G, Reece C, Cherns D, Fermin DJ, Veal TD, Dhanak VR, Walsh A. Electronic and optical properties of single crystal SnS2: An earth-abundant disulfide photocatalyst Journal of Materials Chemistry A. 4: 1312-1318. DOI: 10.1039/C5Ta08214E |
0.514 |
|
| 2015 |
Kattan N, Hou B, Fermín DJ, Cherns D. Crystal structure and defects visualization of Cu2ZnSnS4 nanoparticles employing transmission electron microscopy and electron diffraction Applied Materials Today. 1: 52-59. DOI: 10.1016/J.Apmt.2015.08.004 |
0.586 |
|
| 2014 |
Huang P, Kalyar MM, Webster RF, Cherns D, Ashfold MN. Tungsten oxide nanorod growth by pulsed laser deposition: influence of substrate and process conditions. Nanoscale. 6: 13586-97. PMID 25268109 DOI: 10.1039/C4Nr03977G |
0.375 |
|
| 2014 |
Cherns D, Webster RF, Novikov SV, Foxon CT, Fischer AM, Ponce FA, Haigh SJ. Compositional variations in In(0.5)Ga(0.5)N nanorods grown by molecular beam epitaxy. Nanotechnology. 25: 215705. PMID 24785272 DOI: 10.1088/0957-4484/25/21/215705 |
0.366 |
|
| 2014 |
Hou B, Benito-Alifonso D, Webster R, Cherns D, Galan MC, Fermín DJ. Rapid phosphine-free synthesis of CdSe quantum dots: promoting the generation of Se precursors using a radical initiator J. Mater. Chem. A. 2: 6879-6886. DOI: 10.1039/C4Ta00285G |
0.689 |
|
| 2014 |
Zhang Q, Celorrio V, Bradley K, Eisner F, Cherns D, Yan W, Fermín DJ. Density of deep trap states in oriented TiO2 nanotube arrays Journal of Physical Chemistry C. 118: 18207-18213. DOI: 10.1021/Jp505091T |
0.301 |
|
| 2014 |
Goff LE, Powell REL, Kent AJ, Foxon CT, Novikov SV, Webster R, Cherns D. Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates Journal of Crystal Growth. 386: 135-138. DOI: 10.1016/J.Jcrysgro.2013.09.049 |
0.335 |
|
| 2014 |
Kumarakuru H, Cherns D, Collins AM. The growth and conductivity of nanostructured ZnO films grown on Al-doped ZnO precursor layers by pulsed laser deposition Ceramics International. 40: 8389-8395. DOI: 10.1016/J.Ceramint.2014.01.045 |
0.368 |
|
| 2014 |
Griffiths I, Cherns D, Wang X, Wehman H, Mandl M, Strassburg M, Waag A. Characterisation of 3D-GaN/InGaN core-shell nanostructures by transmission electron microscopy Physica Status Solidi (C). 11: 425-427. DOI: 10.1002/Pssc.201300522 |
0.415 |
|
| 2014 |
Webster RF, Cherns D, Novikov SV, Foxon CT. Transmission electron microscopy of indium gallium nitride nanorods grown by molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 417-420. DOI: 10.1002/Pssc.201300454 |
0.409 |
|
| 2013 |
Hou B, Benito-Alifonso D, Kattan N, Cherns D, Galan MC, Fermín DJ. Initial stages in the formation of Cu2ZnSn(S,Se)4 nanoparticles. Chemistry (Weinheim An Der Bergstrasse, Germany). 19: 15847-51. PMID 24151102 DOI: 10.1002/Chem.201302722 |
0.682 |
|
| 2013 |
Ward MB, Kapitul?inová D, Brown AP, Heard PJ, Cherns D, Cockell CS, Hallam KR, Ragnarsdóttir KV. Investigating the role of microbes in mineral weathering: nanometre-scale characterisation of the cell-mineral interface using FIB and TEM. Micron (Oxford, England : 1993). 47: 10-7. PMID 23375115 DOI: 10.1016/J.Micron.2012.12.006 |
0.353 |
|
| 2013 |
Hou B, Parker D, Kissling GP, Jones JA, Cherns D, Fermín DJ. Structure and Band Edge Energy of Highly Luminescent CdSe1–xTex Alloyed Quantum Dots The Journal of Physical Chemistry C. 117: 6814-6820. DOI: 10.1021/Jp400208A |
0.671 |
|
| 2013 |
Wang X, Li S, Mohajerani MS, Ledig J, Wehmann H, Mandl M, Strassburg M, Steegmüller U, Jahn U, Lähnemann J, Riechert H, Griffiths I, Cherns D, Waag A. Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core–Shell LED Structures Crystal Growth & Design. 13: 3475-3480. DOI: 10.1021/Cg4003737 |
0.342 |
|
| 2013 |
Kumarakuru H, Cherns D. The preferential growth of ZnS on ZnOnanorods Journal of Solid State Chemistry. 199: 109-115. DOI: 10.1016/J.Jssc.2012.12.009 |
0.378 |
|
| 2013 |
Cherns D, Webster RF, Novikov SV, Foxon CT, Fischer AM, Ponce FA. The growth of In0.5Ga0.5N and InN layers on (1 1 1)Si using nanorod intermediate arrays Journal of Crystal Growth. 384: 55-60. DOI: 10.1016/J.Jcrysgro.2013.09.012 |
0.375 |
|
| 2011 |
Montes De Oca MG, Kumarakuru H, Cherns D, Fermín DJ. Hydrogen adsorption at strained Pd nanoshells Journal of Physical Chemistry C. 115: 10489-10496. DOI: 10.1021/Jp2021209 |
0.591 |
|
| 2011 |
Kumarakuru H, Cherns D, Fuge GM. The growth of Al-doped ZnO nanorods on c-axis sapphire by pulsed laser deposition Surface & Coatings Technology. 205: 5083-5087. DOI: 10.1016/J.Surfcoat.2011.05.011 |
0.324 |
|
| 2010 |
Liu C, Shields PA, Chen Q, Allsopp DWE, Wang WN, Bowen CR, Phan TL, Cherns D. Variations in mechanisms of selective area growth of GaN on nano-patterned substrates by MOVPE Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 32-35. DOI: 10.1002/Pssc.200982618 |
0.353 |
|
| 2009 |
Phan T, Vincent R, Cherns D, Dan NH, Yu S. Characterization of (Mn, Co)-Codoped ZnO Nanorods Prepared by Thermal Diffusion Ieee Transactions On Magnetics. 45: 2435-2438. DOI: 10.1109/Tmag.2009.2018601 |
0.323 |
|
| 2009 |
Ponce F, Wei QY, Wu ZH, Fonseca-Filho HD, Almeida CM, Prioli R, Cherns D. Nanoscale dislocation patterning by scratching in an atomic force microscope Journal of Applied Physics. 106: 76106. DOI: 10.1063/1.3245321 |
0.334 |
|
| 2009 |
Foxon CT, Novikov SV, Hall JL, Campion RP, Cherns D, Griffiths I, Khongphetsak S. A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy Journal of Crystal Growth. 311: 3423-3427. DOI: 10.1016/J.Jcrysgro.2009.04.021 |
0.313 |
|
| 2008 |
Wang WN, Liu C, Gott A, Denchitcharoen S, Shields P, Meshi L, Khongphetsak S, Griffiths I, Cherns D, Campion R. Nano-pendeo GaN Growth of Light Emitting Devices on Silicon Journal of Light & Visual Environment. 32: 187-190. DOI: 10.2150/Jlve.32.187 |
0.33 |
|
| 2008 |
Cherns D, Meshi L, Griffiths I, Khongphetsak S, Novikov SV, Farley NRS, Campion RP, Foxon CT. Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy Applied Physics Letters. 93: 111911. DOI: 10.1063/1.2987423 |
0.383 |
|
| 2008 |
Sun Y, Cherns D, Doherty RP, Warren JL, Heard PJ. Reduction of threading dislocations in ZnO/(0001) sapphire film heterostructure by epitaxial lateral overgrowth of nanorods Journal of Applied Physics. 104. DOI: 10.1063/1.2957082 |
0.395 |
|
| 2008 |
Cherns D, Meshi L, Griffiths IJ, Khongphetsak S, Novikov SV, Farley N, Campion RP, Foxon CT. Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers Applied Physics Letters. 92: 121902. DOI: 10.1063/1.2899944 |
0.377 |
|
| 2008 |
Cherns D, Sun Y. Defect reduction by epitaxial lateral overgrowth of nanorods in ZnO/(0001) sapphire films Applied Physics Letters. 92: 51909. DOI: 10.1063/1.2841707 |
0.342 |
|
| 2008 |
Meshi L, Cherns D, Griffiths I, Khongphetsak S, Gott A, Liu C, Denchitcharoen S, Shields P, Wang WN, Campion R, Novikov S, Foxon T. The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer Physica Status Solidi (C). 5: 1645-1647. DOI: 10.1002/Pssc.200778562 |
0.401 |
|
| 2008 |
Hawkridge M, Cherns D, Liliental-Weber Z. Electron irradiation and the equilibrium of open core dislocations in gallium nitride Physica Status Solidi B-Basic Solid State Physics. 245: 903-906. DOI: 10.1002/Pssb.200778610 |
0.431 |
|
| 2007 |
Sun Y, Cherns D. New method of reducing threading dislocation in epitaxial ZnO films grown on c-sapphire Mrs Proceedings. 1035. DOI: 10.1557/Proc-1035-L09-07 |
0.308 |
|
| 2007 |
Nicholls D, Vincent R, Cherns D, Sun Y, Ashfold MNR. Polarity determination of zinc oxide nanorods by defocused convergent-beam electron diffraction Philosophical Magazine Letters. 87: 417-421. DOI: 10.1080/09500830701203164 |
0.357 |
|
| 2007 |
Phan T, Vincent R, Cherns D, Nghia NX, Phan M, Yu S. Electron spin resonance and Raman studies of Mn-doped ZnO ceramics Journal of Applied Physics. 101: 1-3. DOI: 10.1063/1.2709756 |
0.328 |
|
| 2007 |
Doherty R, Sun Y, Sun Y, Warren J, Fox N, Cherns D, Ashfold M. Growth of nanostructured ZnO thin films on sapphire Applied Physics A. 89: 49-55. DOI: 10.1007/S00339-007-4075-9 |
0.369 |
|
| 2006 |
Liu R, Mei J, Srinivasan S, Omiya H, Ponce FA, Cherns D, Narukawa Y, Mukai T. Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN Japanese Journal of Applied Physics. 45. DOI: 10.1143/Jjap.45.L549 |
0.389 |
|
| 2006 |
Cherns D, Hawkridge M. Open core threading dislocations in GaN grown by hydride vapour phase epitaxy Philosophical Magazine. 86: 4747-4756. DOI: 10.1080/14786430600690481 |
0.416 |
|
| 2005 |
Sahonta SL, Cherns D, Liu R, Ponce F, Amano H, Akasaki I. CBED study of grain misorientations in AlGaN epilayers Ultramicroscopy. 103: 23-32. PMID 15777597 DOI: 10.1016/J.Ultramic.2004.11.013 |
0.404 |
|
| 2005 |
Hawkridge ME, Cherns D. Oxygen Segregation to Nanopipes in Gallium Nitride Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff22-05 |
0.39 |
|
| 2004 |
Henley S, Ashfold MNR, Cherns D. The growth of transparent conducting ZnO films by pulsed laser ablation Surface & Coatings Technology. 177: 271-276. DOI: 10.1016/J.Surfcoat.2003.09.005 |
0.336 |
|
| 2004 |
Henley SJ, Ashfold MNR, Nicholls DP, Wheatley P, Cherns D. Controlling the size and alignment of ZnO microrods using ZnO thin film templates deposited by pulsed laser ablation Applied Physics A. 79: 1169-1173. DOI: 10.1007/S00339-004-2697-8 |
0.315 |
|
| 2003 |
Baines MQ, Cherns D, Novikov SV, Manfra MJ, Thomas Foxon C. The structure of dislocations in GaN grown by MBE as a function of the gallium to nitrogen ratio Materials Research Society Symposium - Proceedings. 798: 729-734. DOI: 10.1557/Proc-798-Y9.3 |
0.389 |
|
| 2003 |
Liu R, Ponce F, Sahonta SL, Cherns D, Amano H, Akasaki I. Effects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well Mrs Proceedings. 798: 775-780. DOI: 10.1557/Proc-798-Y5.33 |
0.334 |
|
| 2003 |
Bell A, Liu R, Ponce F, Amano H, Akasaki I, Cherns D. Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire Applied Physics Letters. 82: 349-351. DOI: 10.1063/1.1537517 |
0.364 |
|
| 2003 |
Liu R, Bell A, Ponce F, Amano H, Akasaki I, Cherns D. Thick crack-free AlGaN films deposited by facet-controlled epitaxial lateral overgrowth Physica Status Solidi (C). 2136-2140. DOI: 10.1002/Pssc.200303450 |
0.407 |
|
| 2002 |
Jiao C, Cherns D. Investigation of the charge on threading edge dislocations in GaN by electron holography Journal of Electron Microscopy. 51: 105-112. PMID 12005163 DOI: 10.1093/Jmicro/51.2.105 |
0.357 |
|
| 2002 |
Baines MQ, Cherns D, Hsu JWP, Manfra MJ. The effect of growth stoichiometry on the GaN dislocation core structure Materials Research Society Symposium - Proceedings. 743: 41-46. DOI: 10.1557/Proc-743-L2.5 |
0.386 |
|
| 2002 |
Cherns D, Wang YQ, Liu R, Ponce F, Amano H, Akasaki I. Hollow core dislocations in Mg-doped AlGaN Mrs Proceedings. 743: 609-614. DOI: 10.1557/Proc-743-L10.9 |
0.303 |
|
| 2002 |
Cherns D, Wang YQ, Liu R, Ponce F. Observation of coreless edge and mixed dislocations in Mg-doped Al0.03Ga0.97N Applied Physics Letters. 81: 4541-4543. DOI: 10.1063/1.1527978 |
0.379 |
|
| 2002 |
Cherns D. TEM characterisation of defects, strains and local electric fields in AlGaN/InGaN/GaN structures Materials Science and Engineering B-Advanced Functional Solid-State Materials. 91: 274-279. DOI: 10.1016/S0921-5107(01)01039-X |
0.409 |
|
| 2002 |
Henley S, Ashfold MNR, Cherns D. The oriented growth of ZnO films on NaCl substrates by pulsed laser ablation Thin Solid Films. 422: 69-72. DOI: 10.1016/S0040-6090(02)00986-0 |
0.38 |
|
| 2002 |
Sahonta SL, Baines MQ, Cherns D, Amano H, Ponce F. Migration of Dislocations in Strained GaN Heteroepitaxial Layers Physica Status Solidi B-Basic Solid State Physics. 234: 952-955. DOI: 10.1002/1521-3951(200212)234:3<952::Aid-Pssb952>3.0.Co;2-4 |
0.377 |
|
| 2002 |
Cherns D, Jiao CG, Mokhtari H, Cai J, Ponce F. Electron Holography Studies of the Charge on Dislocations in GaN Physica Status Solidi B-Basic Solid State Physics. 234: 924-930. DOI: 10.1002/1521-3951(200212)234:3<924::Aid-Pssb924>3.0.Co;2-8 |
0.362 |
|
| 2002 |
Cherns D, Baines MQ, Wang YQ, Liu R, Ponce F, Amano H, Akasaki I. Mg incorporation in AlGaN layers grown on grooved sapphire substrates Physica Status Solidi B-Basic Solid State Physics. 234: 850-854. DOI: 10.1002/1521-3951(200212)234:3<850::Aid-Pssb850>3.0.Co;2-G |
0.364 |
|
| 2001 |
Cherns D, Jiao CG, Mokhtari H. Profiling electric fields around dislocations in GaN Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I10.2.1 |
0.343 |
|
| 2001 |
Liliental-Weber Z, Cherns D. Microstructure of laterally overgrown GaN layers Journal of Applied Physics. 89: 7833-7840. DOI: 10.1063/1.1370366 |
0.358 |
|
| 2001 |
Cherns D, Henley SJ, Ponce F. Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence Applied Physics Letters. 78: 2691-2693. DOI: 10.1063/1.1369610 |
0.408 |
|
| 2001 |
Henley SJ, Bewick A, Cherns D, Ponce FA. Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells Journal of Crystal Growth. 230: 481-486. DOI: 10.1016/S0022-0248(01)01245-3 |
0.398 |
|
| 2001 |
Cherns D, Mokhtari H, Jiao CG, Averbeck R, Riechert H. Profiling band structure in GaN devices by electron holography Journal of Crystal Growth. 230: 410-414. DOI: 10.1016/S0022-0248(01)01243-X |
0.37 |
|
| 2000 |
Cherns D, Liliental-Weber Z. Can laterally overgrown GaN layers be free of structural defects Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G5.2 |
0.318 |
|
| 2000 |
Kuball M, Mokhtari H, Cherns D, Lu J, Westwood DI. Amorphous GaN Grown by Room Temperature Molecular Beam Epitaxy Japanese Journal of Applied Physics. 39: 4753-4754. DOI: 10.1143/Jjap.39.4753 |
0.409 |
|
| 2000 |
Takeda S, Cherns D. Preface to recent developments in the electron microscopy of semiconductors Journal of Electron Microscopy. 49: 209-209. DOI: 10.1093/Oxfordjournals.Jmicro.A023799 |
0.347 |
|
| 1999 |
Cherns D, Barnard J, Mokhtari H. Characterisation of defects and piezoelectric fields in InGaN/GaN layers by transmission electron microscopy Materials Science and Engineering B-Advanced Functional Solid-State Materials. 66: 33-38. DOI: 10.1016/S0921-5107(99)00143-9 |
0.426 |
|
| 1999 |
Cherns D, Barnard J, Ponce F. Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography Solid State Communications. 111: 281-285. DOI: 10.1016/S0038-1098(99)00130-1 |
0.367 |
|
| 1998 |
Cherns D, Young WT, Saunders M, Steeds JW, Ponce F, Nakamura S. Determination of the atomic structure of inversion domain boundaries in α-GaN by transmission electron microscopy Philosophical Magazine. 77: 273-286. DOI: 10.1080/01418619808214243 |
0.382 |
|
| 1997 |
Ponce F, Cherns D, Goetz W, Kern RS. Microstructure of InGaN Quantum Wells Mrs Proceedings. 482: 453-458. DOI: 10.1557/Proc-482-453 |
0.37 |
|
| 1997 |
Cherns D, Young WT, Ponce F. Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy Materials Science and Engineering B-Advanced Functional Solid-State Materials. 50: 76-81. DOI: 10.1016/S0921-5107(97)00171-2 |
0.414 |
|
| 1997 |
Cherns D, Young W, Steeds JW, Ponce F, Nakamura S. Observation of coreless dislocations in α-GaN Journal of Crystal Growth. 178: 201-206. DOI: 10.1016/S0022-0248(97)00081-X |
0.372 |
|
| 1996 |
Morniroli JP, Cherns D. Analysis of grain boundary dislocations by large angle convergent beam electron diffraction. Ultramicroscopy. 62: 53-63. PMID 22666917 DOI: 10.1016/0304-3991(95)00087-9 |
0.332 |
|
| 1996 |
Ponce F, Cherns D, Young WT, Steeds JW. Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques Applied Physics Letters. 69: 770-772. DOI: 10.1063/1.117886 |
0.417 |
|
| 1995 |
Cordier P, Morniroli JP, Cherns D. Characterization of crystal defects in quartz by large-angle convergent-beam electron diffraction Philosophical Magazine. 72: 1421-1430. DOI: 10.1080/01418619508236266 |
0.375 |
|
| 1995 |
Atici Y, Cherns D. Observation of crystal distortions in SiGeSi superlattice using a new application of large-angle convergent-beam electron diffraction Ultramicroscopy. 58: 435-440. DOI: 10.1016/0304-3991(95)00004-K |
0.379 |
|
| 1995 |
Atici Y, Cherns D. Transmission electron microscope study of surface steps on SiGe/Si(001) superlattices produced by differential etching Journal of Crystal Growth. 154: 262-268. DOI: 10.1016/0022-0248(95)00166-2 |
0.385 |
|
| 1994 |
Rossouw CJ, Spellward P, Perovic DD, Cherns D. Dynamical zone axis electron diffraction contrast of Boron-doped Si multilayers Philosophical Magazine. 69: 255-265. DOI: 10.1080/01418619408244342 |
0.398 |
|
| 1994 |
Duan X, Cherns D, Steeds JW. Effects of elastic relaxation on large-angle convergent-beam electron diffraction from cross-sectional specimens of GexSi1−x/Si strained-layer superlattices Philosophical Magazine. 70: 1091-1105. DOI: 10.1080/01418619408242951 |
0.339 |
|
| 1994 |
Cherns D, Morniroli J-. Analysis of partial and stair-rod dislocations by large angle convergent beam electron diffraction Ultramicroscopy. 53: 167-180. DOI: 10.1016/0304-3991(94)90007-8 |
0.369 |
|
| 1993 |
Duan X, Cherns D, Steeds JW. High spatial resolution of diffraction information in large angle convergent beam electron diffraction patterns from cross-sectional specimens of GeSi/Si strained laser superlattices Acta Crystallographica Section A. 49: 356-356. DOI: 10.1107/S0108767378090054 |
0.338 |
|
| 1993 |
Steeds JW, Cherns D. Probing semiconductor interfaces by transmission electron microscopy Philosophical Transactions of the Royal Society A. 344: 545-556. DOI: 10.1098/Rsta.1993.0107 |
0.321 |
|
| 1993 |
Cherns D, Chou C, Steeds JW, Ashenford D, Lunn B. A multiple cross-slip mechanism for the generation of misfit dislocations in (001) semiconductor heterostructures Philosophical Magazine Letters. 67: 323-330. DOI: 10.1080/09500839308241269 |
0.324 |
|
| 1993 |
Chou CT, Hutchison JL, Cherns D, Casanove M‐, Steeds JW, Vincent R, Lunn B, Ashenford DA. An ordered Ga2Te3 phase in the ZnTe/GaSb interface Journal of Applied Physics. 74: 6566-6570. DOI: 10.1063/1.355118 |
0.313 |
|
| 1992 |
Al-Khafaji MA, Cherns D, Rossouw CJ, Woolf DA. Interface atomic structure determination of an AI(001)/GaAs(001) bicrystal using higher-order Law zone analysis and atom location by channelling-enhanced microanalysis Philosophical Magazine Part B. 65: 385-399. DOI: 10.1080/13642819208207639 |
0.355 |
|
| 1992 |
Al-Khafaji MA, Cherns D, Rossouw CJ, Woolf DA. Determination of a rigid shift across the Al(001)-GaAs(001) interface Philosophical Magazine. 66: 319-332. DOI: 10.1080/01418619208201559 |
0.384 |
|
| 1991 |
Cherns D, Loretto D, Chand N, Bahnck D, Gibson JM. Interdiffusion-assisted dislocation migration in GaAs/Ga1-xAlxAs layers on Si(001) Philosophical Magazine. 63: 1335-1344. DOI: 10.1080/01418619108205587 |
0.381 |
|
| 1991 |
Cherns D, Touaitia R, Preston AR, Rossouw CJ, Houghton DC. Convergent beam electron diffraction studies of strain in Si/SiGe superlattices Philosophical Magazine. 64: 597-612. DOI: 10.1080/01418619108204862 |
0.368 |
|
| 1991 |
Rossouw C, Al-Khafaji M, Cherns D, Steeds JW, Touaitia R. A treatment of dynamical diffraction for multiply layered structures Ultramicroscopy. 35: 229-236. DOI: 10.1016/0304-3991(91)90074-G |
0.39 |
|
| 1990 |
Gibson JM, Loretto D, Cherns D. In-Situ Transmission Electron Microscopy of the Formation of Metal-Semiconductor Contacts Mrs Proceedings. 181: 91. DOI: 10.1557/Proc-181-91 |
0.343 |
|
| 1989 |
Kiely CJ, Cherns D. On the atomic structure of the Al-GaAs(100) interface Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 59: 1-29. DOI: 10.1080/01418618908220328 |
0.365 |
|
| 1988 |
Cherns D, Jordan IK, Vincent R. Composition Phdfiies in AlGaAs/GaAs and InGaAs/InP Strutures Examined by Convergent Beam Electron Diffraction Mrs Proceedings. 138. DOI: 10.1557/Proc-138-431 |
0.354 |
|
| 1988 |
Cherns D, Jordan IK, Vincent R. Convergent-beam electron diffraction from AlGaAs/GaAs single quantum wells Philosophical Magazine Letters. 58: 45-51. DOI: 10.1080/09500838808214729 |
0.368 |
|
| 1988 |
Cherns D, Kiely CJ, Preston AR. Electron diffraction studies of strain in epitaxial bicrystals and multilayers Ultramicroscopy. 24: 355-369. DOI: 10.1016/0304-3991(88)90127-1 |
0.393 |
|
| 1987 |
Cherns D. The Role of Misfit Dislocation During Epitaxial Growth Mrs Proceedings. 94: 99. DOI: 10.1557/Proc-94-99 |
0.314 |
|
| 1985 |
Cherns D, Feuillet G. The mechanism of dislocation climb in GaAs under electron irradiation Philosophical Magazine. 51: 661-674. DOI: 10.1080/01418618508245280 |
0.39 |
|
| 1984 |
Cherns D, Hetherington CJD, Humphreys CJ. The atomic structure of the NiSi2-(001)Si interface Philosophical Magazine. 49: 165-177. DOI: 10.1080/01418618408233436 |
0.342 |
|
| 1983 |
Cherns D, Pond RC. On the Structure of Metal Silicide:Silicon Interfaces. Mrs Proceedings. 25. DOI: 10.1557/Proc-25-423 |
0.355 |
|
| Show low-probability matches. |