Ferran Martin - Publications

Affiliations: 
2017 Institute of Photonic Sciences 

6/59 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Storz S, Schär J, Kulikov A, Magnard P, Kurpiers P, Lütolf J, Walter T, Copetudo A, Reuer K, Akin A, Besse JC, Gabureac M, Norris GJ, Rosario A, Martin F, et al. Loophole-free Bell inequality violation with superconducting circuits. Nature. 617: 265-270. PMID 37165240 DOI: 10.1038/s41586-023-05885-0  0.439
2020 Gomez P, Martin F, Mazzinghi C, Benedicto Orenes D, Palacios S, Mitchell MW. Bose-Einstein Condensate Comagnetometer. Physical Review Letters. 124: 170401. PMID 32412288 DOI: 10.1103/Physrevlett.124.170401  0.581
2019 Gomez P, Mazzinghi C, Martin F, Coop S, Palacios S, Mitchell MW. Interferometric measurement of interhyperfine scattering lengths in Rb87 Physical Review A. 100. DOI: 10.1103/Physreva.100.032704  0.562
1999 Martín F, García -, Oriols X, Suñé J. Quantum Simulation of Resonant Tunneling Diodes: a Reliable Approach Based on the Wigner Function Method Japanese Journal of Applied Physics. 38: 2669-2674. DOI: 10.1143/JJAP.38.2669  0.321
1998 Garcı́a-Garcı́a J, Martı́n F, Oriols X, Suñé J. Quantum Monte Carlo simulation of resonant tunneling diodes based on the Wigner distribution function formalism Applied Physics Letters. 73: 3539-3541. DOI: 10.1063/1.122800  0.314
1997 Oriols X, García-García JJ, Martín F, Suñé J, González T, Mateos J, Pardo D. Quantum Monte Carlo Simulation of Tunneling Devices Using Bohm Trajectories Physica Status Solidi (B). 204: 404-407. DOI: 10.1002/1521-3951(199711)204:1<404::AID-PSSB404>3.0.CO;2-A  0.306
Low-probability matches (unlikely to be authored by this person)
1998 Oriols X, Garcı́a-Garcı́a JJ, Martı́n F, Suñé J, González T, Mateos J, Pardo D. Bohm trajectories for the Monte Carlo simulation of quantum-based devices Applied Physics Letters. 72: 806-808. DOI: 10.1063/1.120899  0.298
1999 Vizoso J, Martín F, Martínez X, Garriga M, Aymerich X. Growth of Si nuclei on SiO2 for quantum dot memory applications Microelectronic Engineering. 48: 431-434. DOI: 10.1016/S0167-9317(99)00420-7  0.27
2018 Paredes F, Herrojo C, Mata-Contreras J, Moras M, Núñez A, Ramon E, Martín F. Near-Field Chipless Radio-Frequency Identification (RFID) Sensing and Identification System with Switching Reading. Sensors (Basel, Switzerland). 18. PMID 29642560 DOI: 10.3390/s18041148  0.129
2021 Paredes F, Herrojo C, Martín F. Position Sensors for Industrial Applications Based on Electromagnetic Encoders. Sensors (Basel, Switzerland). 21. PMID 33924501 DOI: 10.3390/s21082738  0.128
1999 Oriols X, García-García JJ, Martín F, Suñé J, Mateos J, González T, Pardo D, Vanbésien O. Towards the Monte Carlo simulation of resonant tunnelling diodes using time-dependent wavepackets and Bohm trajectories Semiconductor Science and Technology. 14: 532-542. DOI: 10.1088/0268-1242/14/6/308  0.127
2016 Bonache J, Zamora G, Paredes F, Zuffanelli S, Aguilà P, Martín F. Controlling the Electromagnetic Field Confinement with Metamaterials. Scientific Reports. 6: 37739. PMID 27886230 DOI: 10.1038/srep37739  0.126
2022 Paredes F, Karami-Horestani A, Martín F. Strategies to Enhance the Data Density in Synchronous Electromagnetic Encoders. Sensors (Basel, Switzerland). 22. PMID 35746141 DOI: 10.3390/s22124356  0.126
2021 Su L, Vélez P, Muñoz-Enano J, Martín F. Discussion and Analysis of Dumbbell Defect-Ground-Structure (DB-DGS) Resonators for Sensing Applications from a Circuit Theory Perspective. Sensors (Basel, Switzerland). 21. PMID 34960428 DOI: 10.3390/s21248334  0.125
1995 Oriols X, Suñé J, Martín F, Aymerich X. Stationary modeling of two‐dimensional states in resonant tunneling devices Journal of Applied Physics. 78: 2135-2137. DOI: 10.1063/1.360196  0.12
2002 Oriols X, Martín F, Suñé J. Journal of Computational Electronics. 1: 43-48. DOI: 10.1023/A:1020755509089  0.12
2019 Herrojo C, Paredes F, Mata-Contreras J, Martín F. Chipless-RFID: A Review and Recent Developments. Sensors (Basel, Switzerland). 19. PMID 31374987 DOI: 10.3390/s19153385  0.119
2019 Sun H, Gu C, Li Z, Xu Q, Wei M, Song J, Xu B, Dong X, Wang K, Martín F. Parametric Testing of Metasurface Stirrers for Metasurfaced Reverberation Chambers. Sensors (Basel, Switzerland). 19. PMID 30823608 DOI: 10.3390/s19040976  0.116
2002 Oriols X, Martı́n F, Suñé J. High frequency components of current fluctuations in semiconductor tunneling barriers Applied Physics Letters. 80: 4048-4050. DOI: 10.1063/1.1482136  0.115
1996 Oriols X, Martín F, Suñé J. Oscillatory bohm trajectories in resonant tunneling structures Solid State Communications. 99: 123-128. DOI: 10.1016/S0038-1098(96)80062-7  0.115
1999 Martı́n F, Garcı́a-Garcı́a J, Oriols X, Suñé J. Coupling between the Liouville equation and a classical Monte Carlo solver for the simulation of electron transport in resonant tunneling diodes Solid-State Electronics. 43: 315-323. DOI: 10.1016/S0038-1101(98)00273-1  0.114
2011 Naqui J, Durán-Sindreu M, Martín F. Novel sensors based on the symmetry properties of split ring resonators (SRRs). Sensors (Basel, Switzerland). 11: 7545-53. PMID 22164031 DOI: 10.3390/s110807545  0.114
1996 Suñé J, Oriols X, Martín F, Aymerich X. Bohm trajectories and their potential use for the Monte Carlo simulation of resonant tunnelling diodes Applied Surface Science. 102: 255-258. DOI: 10.1016/0169-4332(96)00060-8  0.112
1996 García-García J, Oriols X, Martín F, Suñé J. Comparison between the relaxation time approximation and the Boltzmann collision operator for simulation of dissipative electron transport in resonant tunnelling diodes Solid-State Electronics. 39: 1795-1804. DOI: 10.1016/S0038-1101(96)00119-0  0.112
2022 Paredes F, Herrojo C, Moya A, Berenguel Alonso M, Gonzalez D, Bruguera P, Delgado Simao C, Martín F. Electromagnetic Encoders Screen-Printed on Rubber Belts for Absolute Measurement of Position and Velocity. Sensors (Basel, Switzerland). 22. PMID 35271191 DOI: 10.3390/s22052044  0.109
2020 Herrojo C, Paredes F, Martín F. 3D-Printed All-Dielectric Electromagnetic Encoders with Synchronous Reading for Measuring Displacements and Velocities. Sensors (Basel, Switzerland). 20. PMID 32867115 DOI: 10.3390/s20174837  0.107
2018 Su L, Mata-Contreras J, Vélez P, Fernández-Prieto A, Martín F. Analytical Method to Estimate the Complex Permittivity of Oil Samples. Sensors (Basel, Switzerland). 18. PMID 29587460 DOI: 10.3390/s18040984  0.1
2016 Su L, Mata-Contreras J, Vélez P, Martín F. Configurations of Splitter/Combiner Microstrip Sections Loaded with Stepped Impedance Resonators (SIRs) for Sensing Applications. Sensors (Basel, Switzerland). 16. PMID 27999399 DOI: 10.3390/s16122195  0.099
2018 Sun H, Gu C, Li Z, Xu Q, Song J, Xu B, Dong X, Wang K, Martín F. Enhancing the Number of Modes in Metasurfaced Reverberation Chambers for Field Uniformity Improvement. Sensors (Basel, Switzerland). 18. PMID 30275373 DOI: 10.3390/s18103301  0.097
2022 Abdolrazzaghi M, Nayyeri V, Martin F. Techniques to Improve the Performance of Planar Microwave Sensors: A Review and Recent Developments. Sensors (Basel, Switzerland). 22. PMID 36146297 DOI: 10.3390/s22186946  0.096
1992 Martin F, Aymerich X. Interface and Bulk Traps in Oxide-Nitride Stacked Films Mrs Proceedings. 284. DOI: 10.1557/PROC-284-141  0.095
2015 Naqui J, Coromina J, Karami-Horestani A, Fumeaux C, Martín F. Angular Displacement and Velocity Sensors Based on Coplanar Waveguides (CPWs) Loaded with S-Shaped Split Ring Resonators (S-SRR). Sensors (Basel, Switzerland). 15: 9628-50. PMID 25915590 DOI: 10.3390/s150509628  0.09
2019 Vélez P, Muñoz-Enano J, Gil M, Mata-Contreras J, Martín F. Differential Microfluidic Sensors Based on Dumbbell-Shaped Defect Ground Structures in Microstrip Technology: Analysis, Optimization, and Applications. Sensors (Basel, Switzerland). 19. PMID 31331078 DOI: 10.3390/s19143189  0.086
2020 Casacuberta P, Muñoz-Enano J, Vélez P, Su L, Gil M, Martín F. Highly Sensitive Reflective-Mode Defect Detectors and Dielectric Constant Sensors Based on Open-Ended Stepped-Impedance Transmission Lines. Sensors (Basel, Switzerland). 20. PMID 33142909 DOI: 10.3390/s20216236  0.085
2016 Zuffanelli S, Aguila P, Zamora G, Paredes F, Martin F, Bonache J. A High-Gain Passive UHF-RFID Tag with Increased Read Range. Sensors (Basel, Switzerland). 16. PMID 27455274 DOI: 10.3390/s16071150  0.084
2018 Sun H, Li Z, Gu C, Xu Q, Chen X, Sun Y, Lu S, Martin F. Metasurfaced Reverberation Chamber. Scientific Reports. 8: 1577. PMID 29371675 DOI: 10.1038/s41598-018-20066-0  0.079
1998 Garcı́a-Garcı́a JJ, Oriols X, Martı́n F, Suñé J. Effects of spacer layers on the Wigner function simulation of resonant tunneling diodes Journal of Applied Physics. 83: 8057-8061. DOI: 10.1063/1.367899  0.078
2014 Martín F, Bonache J. Application of RF-MEMS-based split ring resonators (SRRs) to the implementation of reconfigurable stopband filters: a review. Sensors (Basel, Switzerland). 14: 22848-63. PMID 25474378 DOI: 10.3390/s141222848  0.077
2023 Shaterian Z, Horestani AK, Martín F, Mrozowski M. Design of novel highly sensitive sensors for crack detection in metal surfaces: theoretical foundation and experimental validation. Scientific Reports. 13: 18540. PMID 37899369 DOI: 10.1038/s41598-023-45556-8  0.074
1990 Barniol N, Farrés E, Martin F, Suñé J, Placencia I, Aymerich X. Simple STM theory Vacuum. 41: 379-381. DOI: 10.1016/0042-207X(90)90364-5  0.07
2023 Abdolrazzaghi M, Kazemi N, Nayyeri V, Martin F. AI-Assisted Ultra-High-Sensitivity/Resolution Active-Coupled CSRR-Based Sensor with Embedded Selectivity. Sensors (Basel, Switzerland). 23. PMID 37448086 DOI: 10.3390/s23136236  0.069
1997 Suñé J, Oriols X, García-García J, Martín F, González T, Mateos J, Pardo D. Bohm trajectories for the modeling of tunneling devices Microelectronic Engineering. 36: 125-128. DOI: 10.1016/S0167-9317(97)00031-2  0.064
1989 Suñé J, Placencia I, Farrés E, Barniol N, Martin F, Aymerich X. Gate oxide breakdown statistics in wearout tests of metal-oxide-semiconductor structures Microelectronics Journal. 20: 27-39. DOI: 10.1016/0026-2692(89)90065-7  0.064
1992 Martín F, Aymerich X. Characterization of the spatial distribution of traps in Si3N4 by field-assisted discharge of metal-nitride-oxide-semiconductor devices Thin Solid Films. 221: 147-153. DOI: 10.1016/0040-6090(92)90808-O  0.063
2015 Su L, Naqui J, Mata-Contreras J, Martín F. Miniature Microwave Notch Filters and Comparators Based on Transmission Lines Loaded with Stepped Impedance Resonators (SIRs). Micromachines. 7. PMID 30407374 DOI: 10.3390/mi7010001  0.063
2021 Muñoz-Enano J, Coromina J, Vélez P, Su L, Gil M, Casacuberta P, Martín F. Planar Phase-Variation Microwave Sensors for Material Characterization: A Review and Comparison of Various Approaches. Sensors (Basel, Switzerland). 21. PMID 33672180 DOI: 10.3390/s21041542  0.061
2001 Oriols X, Martı́n F, Suñé J. Approach to study the noise properties in nanoscale electronic devices Applied Physics Letters. 79: 1703-1705. DOI: 10.1063/1.1402651  0.056
1999 Miranda E, Suñé J, Rodríguez R, Nafría M, Martín F, Aymerich X. Soft Breakdown in Ultrathin SiO2Layers: the Conduction Problem from a New Point of View Japanese Journal of Applied Physics. 38: 2223-2226. DOI: 10.1143/JJAP.38.2223  0.047
2020 Martín F, Vélez P, Gil M. Microwave Sensors Based on Resonant Elements. Sensors (Basel, Switzerland). 20. PMID 32549274 DOI: 10.3390/s20123375  0.037
1992 Martín F, Aymerich X, Campabadal F, Acero M. Carrier transport and storage in Si3N4 for metal-nitride-oxide-semiconductor memory applications Thin Solid Films. 213: 235-243. DOI: 10.1016/0040-6090(92)90288-M  0.035
1997 Vizoso J, Martín F, Suñé J, Nafría M. Hydrogen desorption in SiGe films: A diffusion limited process Applied Physics Letters. 70: 3287-3289. DOI: 10.1063/1.118429  0.018
1997 Vizoso J, Martı́n F, Suñé J, Nafrı́a M. Model for hydrogen desorption in SiGe(100) films Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 15: 2693-2697. DOI: 10.1116/1.580949  0.018
1990 Suñé J, Placencia I, Barniol N, Farrés E, Martín F, Aymerich X. On the breakdown statistics of very thin SiO2 films Thin Solid Films. 185: 347-362. DOI: 10.1016/0040-6090(90)90098-X  0.014
2010 Vizoso J, Martin F, Martinez X, Garriga M, Aymerich X. ChemInform Abstract: Growth of Nanoscale Si Nuclei on SiO2 by Rapid Thermal Chemical Vapor Deposition Cheminform. 31: no-no. DOI: 10.1002/CHIN.200003255  0.013
1999 Vizoso J, Martín F, Martínez X, Garriga M, Aymerich X. Growth of Nanoscale Si Nuclei on SiO2 by Rapid Thermal Chemical Vapor Deposition Journal of the Electrochemical Society. 146: 4219-4225. DOI: 10.1149/1.1392617  0.012
1989 Suñé J, Farrés E, Placencia I, Barniol N, Martín F, Aymerich X. Nondestructive multiple breakdown events in very thin SiO2films Applied Physics Letters. 55: 128-130. DOI: 10.1063/1.102396  0.011
2004 Vilanova JC, Barceló J, Smirniotopoulos JG, Pérez-Andrés R, Villalón M, Miró J, Martin F, Capellades J, Ros PR. Hemangioma from head to toe: MR imaging with pathologic correlation. Radiographics : a Review Publication of the Radiological Society of North America, Inc. 24: 367-85. PMID 15026587 DOI: 10.1148/rg.242035079  0.01
1991 Martin F, Aymerich X. Transient analysis of charge transport in the nitride of MNOS devices under Fowler-Nordheim injection conditions Microelectronics Journal. 22: 5-17. DOI: 10.1016/0026-2692(91)90009-C  0.01
1990 Placencia I, Martin F, Sune J, Aymerich X. On the dissipation of energy by hot electrons in SiO2 Journal of Physics D: Applied Physics. 23: 1576-1581. DOI: 10.1088/0022-3727/23/12/014  0.01
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