Year |
Citation |
Score |
2021 |
Morioka N, Babin C, Nagy R, Gediz I, Hesselmeier E, Liu D, Joliffe M, Niethammer M, Dasari D, Vorobyov V, Kolesov R, Stöhr R, Ul-Hassan J, Son NT, Ohshima T, et al. Author Correction: Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide. Nature Communications. 12: 5978. PMID 34620847 DOI: 10.1038/s41467-021-25869-w |
0.601 |
|
2021 |
Nagy R, Dasari DBR, Babin C, Liu D, Vorobyov V, Niethammer M, Widmann M, Linkewitz T, Gediz I, Stöhr R, Weber HB, Ohshima T, Ghezellou M, Son NT, Ul-Hassan J, et al. Narrow inhomogeneous distribution of spin-active emitters in silicon carbide Applied Physics Letters. 118: 144003. DOI: 10.1063/5.0046563 |
0.546 |
|
2020 |
Morioka N, Babin C, Nagy R, Gediz I, Hesselmeier E, Liu D, Joliffe M, Niethammer M, Dasari D, Vorobyov V, Kolesov R, Stöhr R, Ul-Hassan J, Son NT, Ohshima T, et al. Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide. Nature Communications. 11: 2516. PMID 32433556 DOI: 10.1038/s41467-020-16330-5 |
0.647 |
|
2019 |
Nagy R, Niethammer M, Widmann M, Chen YC, Udvarhelyi P, Bonato C, Hassan JU, Karhu R, Ivanov IG, Son NT, Maze JR, Ohshima T, Soykal ÖO, Gali Á, Lee SY, et al. High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide. Nature Communications. 10: 1954. PMID 31028260 DOI: 10.1038/S41467-019-09873-9 |
0.62 |
|
2019 |
Chen YC, Salter PS, Niethammer M, Widmann M, Kaiser F, Nagy R, Morioka N, Babin C, Erlekampf J, Berwian P, Booth MJ, Wrachtrup J. Laser Writing of Scalable Single Color Centers in Silicon Carbide. Nano Letters. PMID 30882227 DOI: 10.1021/acs.nanolett.8b05070 |
0.481 |
|
2019 |
Udvarhelyi P, Nagy R, Kaiser F, Lee S, Wrachtrup J, Gali A. Spectrally Stable Defect Qubits with no Inversion Symmetry for Robust Spin-To-Photon Interface Physical Review Applied. 11: 44022. DOI: 10.1103/Physrevapplied.11.044022 |
0.582 |
|
2018 |
Nagy R, Widmann M, Niethammer M, Dasari DBR, Gerhardt I, Soykal ÖO, Radulaski M, Ohshima T, Vučković J, Son NT, Ivanov IG, Economou SE, Bonato C, Lee S, Wrachtrup J. Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide Physical Review Applied. 9: 34022. DOI: 10.1103/Physrevapplied.9.034022 |
0.524 |
|
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