Roland Nagy - Publications

Affiliations: 
3. Institute of Physics University of Stuttgart, Germany 

7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Morioka N, Babin C, Nagy R, Gediz I, Hesselmeier E, Liu D, Joliffe M, Niethammer M, Dasari D, Vorobyov V, Kolesov R, Stöhr R, Ul-Hassan J, Son NT, Ohshima T, et al. Author Correction: Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide. Nature Communications. 12: 5978. PMID 34620847 DOI: 10.1038/s41467-021-25869-w  0.601
2021 Nagy R, Dasari DBR, Babin C, Liu D, Vorobyov V, Niethammer M, Widmann M, Linkewitz T, Gediz I, Stöhr R, Weber HB, Ohshima T, Ghezellou M, Son NT, Ul-Hassan J, et al. Narrow inhomogeneous distribution of spin-active emitters in silicon carbide Applied Physics Letters. 118: 144003. DOI: 10.1063/5.0046563  0.546
2020 Morioka N, Babin C, Nagy R, Gediz I, Hesselmeier E, Liu D, Joliffe M, Niethammer M, Dasari D, Vorobyov V, Kolesov R, Stöhr R, Ul-Hassan J, Son NT, Ohshima T, et al. Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide. Nature Communications. 11: 2516. PMID 32433556 DOI: 10.1038/s41467-020-16330-5  0.647
2019 Nagy R, Niethammer M, Widmann M, Chen YC, Udvarhelyi P, Bonato C, Hassan JU, Karhu R, Ivanov IG, Son NT, Maze JR, Ohshima T, Soykal ÖO, Gali Á, Lee SY, et al. High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide. Nature Communications. 10: 1954. PMID 31028260 DOI: 10.1038/S41467-019-09873-9  0.62
2019 Chen YC, Salter PS, Niethammer M, Widmann M, Kaiser F, Nagy R, Morioka N, Babin C, Erlekampf J, Berwian P, Booth MJ, Wrachtrup J. Laser Writing of Scalable Single Color Centers in Silicon Carbide. Nano Letters. PMID 30882227 DOI: 10.1021/acs.nanolett.8b05070  0.481
2019 Udvarhelyi P, Nagy R, Kaiser F, Lee S, Wrachtrup J, Gali A. Spectrally Stable Defect Qubits with no Inversion Symmetry for Robust Spin-To-Photon Interface Physical Review Applied. 11: 44022. DOI: 10.1103/Physrevapplied.11.044022  0.582
2018 Nagy R, Widmann M, Niethammer M, Dasari DBR, Gerhardt I, Soykal ÖO, Radulaski M, Ohshima T, Vučković J, Son NT, Ivanov IG, Economou SE, Bonato C, Lee S, Wrachtrup J. Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide Physical Review Applied. 9: 34022. DOI: 10.1103/Physrevapplied.9.034022  0.524
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