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Chia-Hsiu Hsu - Publications

Affiliations: 
2006-2013 National Sun Yat-sen University, Taiwan 
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48 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Fujisawa Y, Pardo-Almanza M, Hsu CH, Mohamed A, Yamagami K, Krishnadas A, Chang G, Chuang FC, Khoo KH, Zang J, Soumyanarayanan A, Okada Y. Widely Tunable Berry curvature in the Magnetic Semimetal Cr Te. Advanced Materials (Deerfield Beach, Fla.). e2207121. PMID 36642840 DOI: 10.1002/adma.202207121  0.631
2022 Lin YH, Hsu CH, Jang I, Chen CJ, Chiu PM, Lin DS, Wu CT, Chuang FC, Chang PY, Hsu PJ. Proximity-Effect-Induced Anisotropic Superconductivity in a Monolayer Ni-Pb Binary Alloy. Acs Applied Materials & Interfaces. PMID 35575457 DOI: 10.1021/acsami.2c03034  0.643
2022 Sufyan A, Macam G, Huang ZQ, Hsu CH, Chuang FC. Robust Tunable Large-Gap Quantum Spin Hall States in Monolayer CuS on Insulating Substrates. Acs Omega. 7: 15760-15768. PMID 35571781 DOI: 10.1021/acsomega.2c00781  0.766
2022 Feng LY, Villaos RAB, Maghirang AB, Huang ZQ, Hsu CH, Lin H, Chuang FC. Prediction of topological Dirac semimetal in Ca-based Zintl layered compounds CaMX (M = Zn or Cd; X = N, P, As, Sb, or Bi). Scientific Reports. 12: 4582. PMID 35301355 DOI: 10.1038/s41598-022-08370-2  0.719
2021 Sino PAL, Feng LY, Villaos RAB, Cruzado HN, Huang ZQ, Hsu CH, Chuang FC. Anisotropic Rashba splitting in Pt-based Janus monolayers PtXY (X,Y = S, Se, or Te). Nanoscale Advances. 3: 6608-6616. PMID 36132660 DOI: 10.1039/d1na00334h  0.757
2021 Song S, Wang L, Su J, Xu Z, Hsu CH, Hua C, Lyu P, Li J, Peng X, Kojima T, Nobusue S, Telychko M, Zheng Y, Chuang FC, Sakaguchi H, et al. Manifold dynamic non-covalent interactions for steering molecular assembly and cyclization. Chemical Science. 12: 11659-11667. PMID 34667560 DOI: 10.1039/d1sc03733a  0.552
2021 Telychko M, Wang L, Hsu CH, Li G, Peng X, Song S, Su J, Chuang FC, Wu J, Wong MW, Lu J. Tailoring long-range superlattice chirality in molecular self-assemblies weak fluorine-mediated interactions. Physical Chemistry Chemical Physics : Pccp. PMID 34550130 DOI: 10.1039/d1cp02996g  0.535
2021 Chen G, Hsu C, Liu B, Chang L, Lin D, Chuang F, Hsu P. Quantum well electronic states in spatially decoupled 2D Pb nanoislands on Nb-doped SrTiO3(0 0 1) Applied Surface Science. 537: 147967. DOI: 10.1016/J.APSUSC.2020.147967  0.617
2020 Hu G, Zhu Y, Xiang J, Yang TY, Huang M, Wang Z, Wang Z, Liu P, Zhang Y, Feng C, Hou D, Zhu W, Gu M, Hsu CH, Chuang FC, et al. Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS3/Fe3GeTe2 Stacking Heterostructure. Acs Nano. PMID 32885948 DOI: 10.1021/Acsnano.0C05252  0.593
2020 Lin MK, Villaos RAB, Hlevyack JA, Chen P, Liu RY, Hsu CH, Avila J, Mo SK, Chuang FC, Chiang TC. Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe_{2} Films. Physical Review Letters. 124: 036402. PMID 32031832 DOI: 10.1103/Physrevlett.124.036402  0.627
2020 Huang Z, Xu M, Macam G, Hsu C, Chuang F. Large-gap topological insulators in functionalized ordered double transition metal carbide MXenes Physical Review B. 102. DOI: 10.1103/Physrevb.102.075306  0.77
2020 Feng L, Villaos RAB, Huang Z, Hsu C, Chuang F. Layer-dependent band engineering of Pd dichalcogenides: a first-principles study New Journal of Physics. 22: 53010. DOI: 10.1088/1367-2630/Ab7D7A  0.55
2020 Huang Z, Hsu C, Crisostomo CP, Macam G, Su J, Lin H, Bansil A, Chuang F. Quantum anomalous Hall insulator phases in Fe-doped GaBi honeycomb Chinese Journal of Physics. 67: 246-252. DOI: 10.1016/J.Cjph.2020.07.007  0.766
2020 Feng L, Villaos RAB, Cruzado HN, Huang Z, Hsu C, Hsueh H, Lin H, Chuang F. Magnetic and topological properties in hydrogenated transition metal dichalcogenide monolayers Chinese Journal of Physics. 66: 15-23. DOI: 10.1016/j.cjph.2020.03.018  0.703
2020 Hsieh S, Hsu C, Chen H, Lin D, Chuang F, Hsu P. Extended α-phase Bi atomic layer on Si(1 1 1) fabricated by thermal desorption Applied Surface Science. 504: 144103. DOI: 10.1016/J.Apsusc.2019.144103  0.627
2019 Lin CY, Hsu CH, Huang YZ, Hsieh SC, Chen HD, Huang L, Huang ZQ, Chuang FC, Lin DS. Controlling the Polarity of the Molecular Beam Epitaxy Grown In-Bi Atomic Film on the Si(111) Surface. Scientific Reports. 9: 756. PMID 30679630 DOI: 10.1038/S41598-018-37051-2  0.723
2019 Gao Z, Hsu CH, Liu J, Chuang FC, Zhang R, Xia B, Xu H, Huang L, Jin Q, Liu PN, Lin N. Synthesis and characterization of a single-layer conjugated metal-organic structure featuring a non-trivial topological gap. Nanoscale. PMID 30604812 DOI: 10.1039/C8Nr08477G  0.625
2019 Maghirang AB, Huang Z, Villaos RAB, Hsu C, Feng L, Florido E, Lin H, Bansil A, Chuang F. Predicting two-dimensional topological phases in Janus materials by substitutional doping in transition metal dichalcogenide monolayers Npj 2d Materials and Applications. 3. DOI: 10.1038/s41699-019-0118-2  0.734
2018 Hsu C, Huang Z, Lin C, Macam GM, Huang Y, Lin D, Chiang TC, Lin H, Chuang F, Huang L. Growth of a predicted two-dimensional topological insulator based on InBi-Si(111)-7×7 Physical Review B. 98. DOI: 10.1103/Physrevb.98.121404  0.771
2018 Hsu C, Huang Z, Macam GM, Chuang F, Huang L. Prediction of two-dimensional organic topological insulator in metal-DCB lattices Applied Physics Letters. 113: 233301. DOI: 10.1063/1.5064610  0.812
2017 Hsu C, Fang Y, Wu S, Huang Z, Crisostomo CP, Gu Y, Zhu Z, Lin H, Bansil A, Chuang F, Huang L. Quantum anomalous Hall insulator phase in asymmetrically functionalized germanene Physical Review B. 96. DOI: 10.1103/Physrevb.96.165426  0.773
2017 Crisostomo CP, Huang Z, Hsu C, Chuang F, Lin H, Bansil A. Chemically induced large-gap quantum anomalous Hall insulator states in III-Bi honeycombs Npj Computational Materials. 3. DOI: 10.1038/s41524-017-0044-9  0.777
2016 Wang TC, Hsu CH, Huang ZQ, Chuang FC, Su WS, Guo GY. Tunable magnetic states on the zigzag edges of hydrogenated and halogenated group-IV nanoribbons. Scientific Reports. 6: 39083. PMID 27982055 DOI: 10.1038/Srep39083  0.736
2016 Feng Y, Liu D, Feng B, Liu X, Zhao L, Xie Z, Liu Y, Liang A, Hu C, Hu Y, He S, Liu G, Zhang J, Chen C, Xu Z, ... ... Hsu CH, et al. Direct evidence of interaction-induced Dirac cones in a monolayer silicene/Ag(111) system. Proceedings of the National Academy of Sciences of the United States of America. PMID 27930314 DOI: 10.1073/Pnas.1613434114  0.739
2016 Chen SP, Huang ZQ, Crisostomo CP, Hsu CH, Chuang FC, Lin H, Bansil A. Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb. Scientific Reports. 6: 31317. PMID 27507248 DOI: 10.1038/Srep31317  0.804
2016 Hsu CH, Huang ZQ, Crisostomo CP, Yao LZ, Chuang FC, Liu YT, Wang B, Hsu CH, Lee CC, Lin H, Bansil A. Two-dimensional Topological Crystalline Insulator Phase in Sb/Bi Planar Honeycomb with Tunable Dirac Gap. Scientific Reports. 6: 18993. PMID 26764118 DOI: 10.1038/Srep18993  0.808
2016 Chuang FC, Hsu CH, Chou HL, Crisostomo CP, Huang ZQ, Wu SY, Kuo CC, Yeh WCV, Lin H, Bansil A. Prediction of two-dimensional topological insulator by forming a surface alloy on Au/Si(111) substrate Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.035429  0.773
2015 Yao LZ, Crisostomo CP, Yeh CC, Lai SM, Huang ZQ, Hsu CH, Chuang FC, Lin H, Bansil A. Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate. Scientific Reports. 5: 15463. PMID 26537227 DOI: 10.1038/Srep15463  0.786
2015 Crisostomo CP, Yao LZ, Huang ZQ, Hsu CH, Chuang FC, Lin H, Albao MA, Bansil A. Robust Large Gap Two-Dimensional Topological Insulators in Hydrogenated III-V Buckled Honeycombs. Nano Letters. PMID 26390082 DOI: 10.1021/Acs.Nanolett.5B02293  0.806
2015 Fang Y, Huang ZQ, Hsu CH, Li X, Xu Y, Zhou Y, Wu S, Chuang FC, Zhu ZZ. Quantum Spin Hall States in Stanene/Ge(111). Scientific Reports. 5: 14196. PMID 26374077 DOI: 10.1038/Srep14196  0.76
2015 Hsu CH, Huang ZQ, Chuang FC, Kuo CC, Liu YT, Lin H, Bansil A. The nontrivial electronic structure of Bi/Sb honeycombs on SiC(0001) New Journal of Physics. 17. DOI: 10.1088/1367-2630/17/2/025005  0.77
2014 Chuang FC, Yao LZ, Huang ZQ, Liu YT, Hsu CH, Das T, Lin H, Bansil A. Prediction of large-gap two-dimensional topological insulators consisting of bilayers of group III elements with Bi. Nano Letters. 14: 2505-8. PMID 24734779 DOI: 10.1021/Nl500206U  0.774
2014 Huang Z, Chou B, Hsu C, Chuang F, Lin H, Bansil A. Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)-3×3substrate Physical Review B. 90. DOI: 10.1103/Physrevb.90.245433  0.766
2014 Wu S, Hsu C, Yeh WV, Lin H, Chuang F, Kuo C. Stable structure of high In coverage onSi(111)−α−3×3-Au Physical Review B. 90. DOI: 10.1103/Physrevb.90.235407  0.556
2014 Chou B, Huang Z, Hsu C, Chuang F, Liu Y, Lin H, Bansil A. Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators New Journal of Physics. 16: 115008. DOI: 10.1088/1367-2630/16/11/115008  0.614
2014 Huang Z, Hsu C, Chuang F, Liu Y, Lin H, Su W, Ozolins V, Bansil A. Strain driven topological phase transitions in atomically thin films of group IV and V elements in the honeycomb structures New Journal of Physics. 16: 105018. DOI: 10.1088/1367-2630/16/10/105018  0.761
2014 Hsu C, Chang H, Chuang F, Liu Y, Huang Z, Lin H, Ozolinš V, Bansil A. First-principles study of atomic structures and electronic properties of ultrathin Bi films on Ge(111) Surface Science. 626: 68-75. DOI: 10.1016/J.Susc.2014.03.024  0.738
2013 Huang Z, Chuang F, Hsu C, Liu Y, Chang H, Lin H, Bansil A. Nontrivial topological electronic structures in a single Bi(111) bilayer on different substrates: A first-principles study Physical Review B. 88. DOI: 10.1103/Physrevb.88.165301  0.723
2013 Chuang F, Hsu C, Chen C, Huang Z, Ozolins V, Lin H, Bansil A. Tunable topological electronic structures in Sb(111) bilayers: A first-principles study Applied Physics Letters. 102: 022424. DOI: 10.1063/1.4776734  0.776
2013 Albao MA, Putungan DB, Hsu CH, Chuang FC. Enhanced nucleation of Al islands on H-dosed Si(100)-2 × 1 surface: A combined density functional theory and kinetic Monte Carlo study Surface Science. 617: 73-80. DOI: 10.1016/J.Susc.2013.07.003  0.559
2013 Hsu C, Ozolins V, Chuang F. First-principles study of Bi and Sb intercalated graphene on SiC(0001) substrate Surface Science. 616: 149-154. DOI: 10.1016/J.Susc.2013.06.002  0.62
2012 Hsu C, Lin W, Ozolins V, Chuang F. Electronic structure of the indium-adsorbed Au/Si(111)-3×3surface: A first-principles study Physical Review B. 85. DOI: 10.1103/Physrevb.85.155401  0.605
2012 Hsu C, Lin W, Ozolins V, Chuang F. Electronic structures of an epitaxial graphene monolayer on SiC(0001) after metal intercalation (metal = Al, Ag, Au, Pt, and Pd): A first-principles study Applied Physics Letters. 100: 063115. DOI: 10.1063/1.3682303  0.617
2011 Chuang FC, Lin WH, Huang ZQ, Hsu CH, Kuo CC, Ozolins V, Yeh V. Electronic structures of an epitaxial graphene monolayer on SiC(0001) after gold intercalation: a first-principles study. Nanotechnology. 22: 275704. PMID 21597151 DOI: 10.1088/0957-4484/22/27/275704  0.723
2010 Hsu CH, Chuang FC, Albao MA, Yeh V. Electronic structure of the Pb/Si (111 ) - (√7×√3 ) surface reconstruction: A first-principles study Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.033407  0.643
2010 Albao MA, Hsu CH, Putungan DB, Chuang FC. Room-temperature deposition of group III metals on Si(1 0 0): A comparative study of nucleation behavior Surface Science. 604: 396-403. DOI: 10.1016/J.Susc.2009.11.036  0.606
2008 Chuang F, Hsu C, Wang C, Ho K. Atomic and electronic structures of Ag/Si(111)-c(12×2) surface: A first-principles study Physical Review B. 78: 245418. DOI: 10.1103/Physrevb.78.245418  0.641
2008 Chuang F, Hsu C, Wang C, Ho K. Honeycomb chain structure of the Au/Si(111)-(5×2) surface reconstruction: A first-principles study Physical Review B. 77: 153409. DOI: 10.1103/Physrevb.77.153409  0.655
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