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Jeeson (Kate) Kim - Publications

Affiliations: 
2015-2018 Sejong University, Korea 
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8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Jeon K, Kim J, Ryu JJ, Yoo SJ, Song C, Yang MK, Jeong DS, Kim GH. Self-rectifying resistive memory in passive crossbar arrays. Nature Communications. 12: 2968. PMID 34016978 DOI: 10.1038/s41467-021-23180-2  0.372
2019 Kim J, Nili H, Truong ND, Ahmed T, Yang J, Jeong DS, Sriram S, Ranasinghe DC, Ippolito S, Chun H, Kavehei O. Nano-Intrinsic True Random Number Generation: A Device to Data Study Ieee Transactions On Circuits and Systems I: Regular Papers. 66: 2615-2626. DOI: 10.1109/Tcsi.2019.2895045  0.667
2019 Kim G, Kornijcuk V, Kim J, Kim D, Hwang CS, Jeong DS. Combination-Encoding Content-Addressable Memory With High Content Density Ieee Access. 7: 137620-137628. DOI: 10.1109/Access.2019.2942150  0.337
2018 Kim J, Ahmed T, Nili H, Yang J, Jeong DS, Beckett P, Sriram S, Ranasinghe DC, Kavehei O. A Physical Unclonable Function With Redox-Based Nanoionic Resistive Memory Ieee Transactions On Information Forensics and Security. 13: 437-448. DOI: 10.1109/Tifs.2017.2756562  0.741
2018 Nili H, Adam GC, Hoskins B, Prezioso M, Kim J, Mahmoodi MR, Bayat FM, Kavehei O, Strukov DB. Hardware-intrinsic security primitives enabled by analogue state and nonlinear conductance variations in integrated memristors Nature Electronics. 1: 197-202. DOI: 10.1038/S41928-018-0039-7  0.58
2017 Ahmed T, Walia S, Kim J, Nili H, Ramanathan R, Mayes ELH, Lau DWM, Kavehei O, Bansal V, Bhaskaran M, Sriram S. Transparent amorphous strontium titanate resistive memories with transient photo-response. Nanoscale. PMID 28944813 DOI: 10.1039/C7Nr04372D  0.607
2017 Kim J, Nili H, Adam GC, Strukov D, Kavehei O. Predictive Analysis of Randomness in 3D RRAM-based Physically Unclonable Security Primitive The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2017.M-2-04  0.546
2016 Nili H, Ahmed T, Walia S, Ramanathan R, Kandjani AE, Rubanov S, Kim J, Kavehei O, Bansal V, Bhaskaran M, Sriram S. Microstructure and dynamics of vacancy-induced nanofilamentary switching network in donor doped SrTiO3-x memristors. Nanotechnology. 27: 505210. PMID 27861164 DOI: 10.1088/0957-4484/27/50/505210  0.6
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