Parents
Sign in to add mentor| James S. Harris | grad student | 2005 | Stanford | |
| (Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy.) | ||||
Children
Sign in to add trainee| Md. Shamim Reza | grad student | 2017- | Texas State, San Marcos |
| TUHIN DEY | grad student | 2018- | Texas State, San Marcos (Neurotree) |
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Publications
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| Stephenson CA, O'Brien WA, Penninger MW, et al. (2016) Band structure of germanium carbides for direct bandgap silicon photonics Journal of Applied Physics. 120 |
| Wistey MA, Baraskar AK, Singisetti U, et al. (2015) Control of InGaAs and InAs facets using metal modulation epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33 |
| Stephenson CA, O’brien WA, Qi M, et al. (2015) Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals Journal of Electronic Materials. 1-6 |
| O’Brien WA, Qi M, Yan L, et al. (2015) Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001) Journal of Electronic Materials |
| O'Brien WA, Wu B, Stephenson C, et al. (2014) Optimal oxide passivation of ge for optoelectronics Ecs Journal of Solid State Science and Technology. 3: P273-P276 |
| Qi M, Stephenson CA, Protasenko V, et al. (2014) Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects Applied Physics Letters. 104 |
| Zhou G, Lu Y, Li R, et al. (2012) InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and I ON/I OFF ratio near 10 6 Ieee Electron Device Letters. 33: 782-784 |
| Guo J, Li G, Faria F, et al. (2012) MBE-regrown ohmics in InAlN HEMTs with a regrowth interface resistance of 0.05 Ω̇mm Ieee Electron Device Letters. 33: 525-527 |
| Li R, Lu Y, Zhou G, et al. (2012) AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μaμm at 0.5 v Ieee Electron Device Letters. 33: 363-365 |
| Afroz Faria F, Guo J, Zhao P, et al. (2012) Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy Applied Physics Letters. 101 |