| Year |
Citation |
Score |
| 2016 |
Stephenson CA, O'Brien WA, Penninger MW, Schneider WF, Gillett-Kunnath M, Zajicek J, Yu KM, Kudrawiec R, Stillwell RA, Wistey MA. Band structure of germanium carbides for direct bandgap silicon photonics Journal of Applied Physics. 120. DOI: 10.1063/1.4959255 |
0.364 |
|
| 2015 |
Wistey MA, Baraskar AK, Singisetti U, Burek GJ, Shin B, Kim E, McIntyre PC, Gossard AC, Rodwell MJW. Control of InGaAs and InAs facets using metal modulation epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4905497 |
0.364 |
|
| 2015 |
Stephenson CA, O’brien WA, Qi M, Penninger M, Schneider WF, Wistey MA. Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals Journal of Electronic Materials. 1-6. DOI: 10.1007/S11664-015-4300-9 |
0.351 |
|
| 2015 |
O’Brien WA, Qi M, Yan L, Stephenson CA, Protasenko V, Xing H, Millunchick JM, Wistey MA. Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001) Journal of Electronic Materials. DOI: 10.1007/S11664-014-3583-6 |
0.439 |
|
| 2014 |
O'Brien WA, Wu B, Stephenson C, Liang K, Cress S, Protasenko V, Arisio C, Lieberman M, Xing HG, Wistey MA. Optimal oxide passivation of ge for optoelectronics Ecs Journal of Solid State Science and Technology. 3: P273-P276. DOI: 10.1149/2.0171407Jss |
0.315 |
|
| 2014 |
Qi M, Stephenson CA, Protasenko V, O'Brien WA, Mintairov A, Xing H, Wistey MA. Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects Applied Physics Letters. 104. DOI: 10.1063/1.4866278 |
0.436 |
|
| 2012 |
Zhou G, Lu Y, Li R, Zhang Q, Liu Q, Vasen T, Zhu H, Kuo JM, Kosel T, Wistey M, Fay P, Seabaugh A, Xing H. InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and I ON/I OFF ratio near 10 6 Ieee Electron Device Letters. 33: 782-784. DOI: 10.1109/Led.2012.2189546 |
0.364 |
|
| 2012 |
Guo J, Li G, Faria F, Cao Y, Wang R, Verma J, Gao X, Guo S, Beam E, Ketterson A, Schuette M, Saunier P, Wistey M, Jena D, Xing H. MBE-regrown ohmics in InAlN HEMTs with a regrowth interface resistance of 0.05 Ω̇mm Ieee Electron Device Letters. 33: 525-527. DOI: 10.1109/Led.2012.2186116 |
0.317 |
|
| 2012 |
Li R, Lu Y, Zhou G, Liu Q, Chae SD, Vasen T, Hwang WS, Zhang Q, Fay P, Kosel T, Wistey M, Xing H, Seabaugh A. AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μaμm at 0.5 v Ieee Electron Device Letters. 33: 363-365. DOI: 10.1109/Led.2011.2179915 |
0.318 |
|
| 2012 |
Afroz Faria F, Guo J, Zhao P, Li G, Kumar Kandaswamy P, Wistey M, Xing H, Jena D. Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4738768 |
0.342 |
|
| 2012 |
Li R, Lu Y, Chae SD, Zhou G, Liu Q, Chen C, Shahriar Rahman M, Vasen T, Zhang Q, Fay P, Kosel T, Wistey M, Xing HG, Koswatta S, Seabaugh A. InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 389-392. DOI: 10.1002/Pssc.201100241 |
0.351 |
|
| 2011 |
Zhou G, Lu Y, Li R, Zhang Q, Hwang WS, Liu Q, Vasen T, Chen C, Zhu H, Kuo JM, Koswatta S, Kosel T, Wistey M, Fay P, Seabaugh A, et al. Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate Ieee Electron Device Letters. 32: 1516-1518. DOI: 10.1109/Led.2011.2164232 |
0.353 |
|
| 2011 |
Guo J, Cao Y, Lian C, Zimmermann T, Li G, Verma J, Gao X, Guo S, Saunier P, Wistey M, Jena D, Xing HG. Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy Physica Status Solidi (a). 208: 1617-1619. DOI: 10.1002/Pssa.201001177 |
0.352 |
|
| 2010 |
Baraskar A, Wistey MA, Jain V, Lobisser E, Singisetti U, Burek G, Lee YJ, Thibeault B, Gossard A, Rodwell M. Ex situ Ohmic contacts to n-InGaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C5l7-C5l9. DOI: 10.1116/1.3454372 |
0.305 |
|
| 2009 |
Baraskar AK, Wistey MA, Jain V, Singisetti U, Burek G, Thibeault BJ, Lee YJ, Gossard AC, Rodwell MJW. Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2036-2039. DOI: 10.1116/1.3182737 |
0.327 |
|
| 2009 |
Singisetti U, Wistey MA, Burek GJ, Baraskar AK, Thibeault BJ, Gossard AC, Rodwell MJW, Shin B, Kim EJ, McIntyre PC, Yu B, Yuan Y, Wang D, Taur Y, Asbeck P, et al. In0.53Ga0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth Ieee Electron Device Letters. 30: 1128-1130. DOI: 10.1109/Led.2009.2031304 |
0.319 |
|
| 2009 |
Mintairov AM, Sun K, Merz JL, Yuen H, Bank S, Wistey M, Harris JS, Peake G, Egorov A, Ustinov V, Kudrawiec R, Misiewicz J. Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/7/075013 |
0.695 |
|
| 2009 |
Singisetti U, Zimmerman JD, Wistey MA, Cagnon J, Thibeault BJ, Rodwell MJW, Gossard AC, Stemmer S, Bank SR. ErAs epitaxial Ohmic contacts to InGaAs/InP Applied Physics Letters. 94. DOI: 10.1063/1.3087313 |
0.572 |
|
| 2009 |
Kudrawiec R, Poloczek P, Misiewicz J, Bae HP, Sarmiento T, Bank SR, Yuen HB, Wistey MA, Harris JS. Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5-1.65 μm: Broadening of the fundamental transition Applied Physics Letters. 94. DOI: 10.1063/1.3073718 |
0.723 |
|
| 2009 |
Burek GJ, Wistey MA, Singisetti U, Nelson A, Thibeault BJ, Bank SR, Rodwell MJW, Gossard AC. Height-selective etching for regrowth of self-aligned contacts using MBE Journal of Crystal Growth. 311: 1984-1987. DOI: 10.1016/J.Jcrysgro.2008.11.012 |
0.577 |
|
| 2009 |
Singisetti U, Wistey MA, Burek GJ, Arkun E, Baraskar AK, Sun Y, Kiewra EW, Thibeault BJ, Gossard AC, Palmstrøm CJ, Rodwell MJW. InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 1394-1398. DOI: 10.1002/Pssc.200881532 |
0.378 |
|
| 2008 |
Singisetti U, Wistey MA, Zimmerman JD, Thibeault BJ, Rodwell MJW, Gossard AC, Bank SR. Ultralow resistance in situ Ohmic contacts to InGaAs/InP Applied Physics Letters. 93. DOI: 10.1063/1.3013572 |
0.583 |
|
| 2008 |
Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Misiewicz J. On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%-32% Journal of Applied Physics. 104. DOI: 10.1063/1.2961330 |
0.689 |
|
| 2008 |
Xin YC, Lin CY, Li Y, Bae HP, Yuen HB, Wistey MA, Harris JS, Bank SR, Lester LF. Monolithic 1.55m GaInNAsSb quantum well passively modelocked lasers Electronics Letters. 44: 581-582. DOI: 10.1049/El:20080362 |
0.656 |
|
| 2008 |
Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Gladysiewicz M, Misiewicz J. The Fermi level position in as-grown GaInNAs(Sb) quantum wells and layers studied by contactless electroreflectance Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 473-477. DOI: 10.1002/Pssc.200777468 |
0.675 |
|
| 2007 |
Oye MM, Shahrjerdi D, Ok I, Hurst JB, Lewis SD, Dey S, Kelly DQ, Joshi S, Mattord TJ, Yu X, Wistey MA, Harris JS, Holmes AL, Lee JC, Banerjee SK. Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si1-x Gex step-graded buffer layers for high- κ III-V metal-oxide-semiconductor field effect transistor applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1098-1102. DOI: 10.1116/1.2713119 |
0.538 |
|
| 2007 |
Bank SR, Bae H, Goddard LL, Yuen HB, Wistey MA, Kudrawiec R, Harris JS. Recent Progress on 1.55-μm dilute-nitride lasers Ieee Journal of Quantum Electronics. 43: 773-785. DOI: 10.1109/Jqe.2007.902301 |
0.702 |
|
| 2007 |
Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Misiewicz J. Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells Journal of Applied Physics. 102. DOI: 10.1063/1.2817258 |
0.688 |
|
| 2007 |
Oye MM, Mattord TJ, Hallock GA, Bank SR, Wistey MA, Reifsnider JM, Ptak AJ, Yuen HB, Harris JS, Holmes AL. Effects of different plasma species (atomic N, metastable N 2 *, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 91. DOI: 10.1063/1.2806226 |
0.791 |
|
| 2007 |
Bae HP, Bank SR, Yuen HB, Sarmiento T, Pickett ER, Wistey MA, Harris JS. Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers Applied Physics Letters. 90. DOI: 10.1063/1.2746944 |
0.818 |
|
| 2007 |
Jackrel DB, Bank SR, Yuen HB, Wistey MA, Harris JS, Ptak AJ, Johnston SW, Friedman DJ, Kurtz SR. Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy Journal of Applied Physics. 101. DOI: 10.1063/1.2744490 |
0.766 |
|
| 2007 |
Kudrawiec R, Bank SR, Yuen HB, Bae H, Wistey MA, Goddard LL, Harris JS, Gladysiewicz M, Motyka M, Misiewicz J. Conduction band offset for Ga0.62In0.38N xAs0.991-xSb0.009/GaNyAs 1-y/GaAs systems with the ground state transition at 1.5-1.65 μm Applied Physics Letters. 90. DOI: 10.1063/1.2716366 |
0.733 |
|
| 2007 |
Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Misiewicz J. Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance Applied Physics Letters. 90. DOI: 10.1063/1.2437729 |
0.688 |
|
| 2007 |
Wistey MA, Fang YY, Tolle J, Chizmeshya AVG, Kouvetakis J. Chemical routes to GeSi (100) structures for low temperature Si-based semiconductor applications Applied Physics Letters. 90. DOI: 10.1063/1.2437098 |
0.374 |
|
| 2007 |
Kudrawiec R, Yuen HB, Motyka M, Gladysiewicz M, Misiewicz J, Bank SR, Bae HP, Wistey MA, Harris JS. Contactless electroreflectance of GaInNAsSbGaAs single quantum wells with indium content of 8%-32% Journal of Applied Physics. 101. DOI: 10.1063/1.2382721 |
0.68 |
|
| 2007 |
Yang H, Khalili A, Wistey M, Harris J. Evanescent-coupled GaInNAsSb in-line fibre photodetectors Iet Optoelectronics. 1: 175-177. DOI: 10.1049/Iet-Opt:20060065 |
0.665 |
|
| 2007 |
Harris JS, Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Jackrel D, Pickett ER, Sarmiento T, Goddard LL, Lordi V, Gugov T. Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications Physica Status Solidi (B) Basic Research. 244: 2707-2729. DOI: 10.1002/Pssb.200675620 |
0.77 |
|
| 2007 |
Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Gladysiewicz M, Misiewicz J. Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium content Physica Status Solidi (a) Applications and Materials Science. 204: 364-372. DOI: 10.1002/Pssa.200673954 |
0.699 |
|
| 2007 |
Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Harris JS, Motyka M, Gladysiewicz M, Misiewicz J. The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contacless electroreflectance Physica Status Solidi (a) Applications and Materials Science. 204: 543-546. DOI: 10.1002/Pssa.200673291 |
0.675 |
|
| 2006 |
Ptak AJ, Friedman DJ, Kurtz S, Reedy RC, Young M, Jackrel DB, Yuen HB, Bank SR, Wistey MA, Harris JS. Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1540. DOI: 10.1116/1.2190664 |
0.763 |
|
| 2006 |
Kudrawiec R, Gladysiewicz M, Misiewicz J, Yuen HB, Bank SR, Wistey MA, Bae HP, Harris JS. Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0Physical Review B. 73: 245413. DOI: 10.1103/Physrevb.73.245413 |
0.659 |
|
| 2006 |
Bank SR, Yuen HB, Bae H, Wistey MA, Moto A, Harris JS. Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes Applied Physics Letters. 88: 241923. DOI: 10.1063/1.2213176 |
0.824 |
|
| 2006 |
Kudrawiec R, Motyka M, Gladysiewicz M, Misiewicz J, Yuen HB, Bank SR, Bae H, Wistey MA, Harris JS. Band gap discontinuity in Ga0.9In0.1N0.027As0.973−xSbx∕GaAs single quantum wells with 0⩽x<0.06 studied by contactless electroreflectance spectroscopy Applied Physics Letters. 88: 221113. DOI: 10.1063/1.2208949 |
0.684 |
|
| 2006 |
Yuen HB, Bank SR, Bae H, Wistey MA, Harris JS. Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells Applied Physics Letters. 88: 221913. DOI: 10.1063/1.2208937 |
0.794 |
|
| 2006 |
Bank SR, Yuen HB, Bae H, Wistey MA, Harris JS. Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications Applied Physics Letters. 88: 221115. DOI: 10.1063/1.2208375 |
0.808 |
|
| 2006 |
Yuen HB, Bank SR, Bae H, Wistey MA, Harris JS. The role of antimony on properties of widely varying GaInNAsSb compositions Journal of Applied Physics. 99: 093504. DOI: 10.1063/1.2191745 |
0.813 |
|
| 2006 |
Wistey M, Bank S, Bae H, Yuen H, Pickett E, Goddard L, Harris J. GaInNAsSb∕GaAs vertical cavity surface emitting lasers at 1534 nm Electronics Letters. 42: 282. DOI: 10.1049/El:20064455 |
0.7 |
|
| 2006 |
Bank SR, Bae HP, Yuen HB, Wistey MA, Goddard LL, Harris JS. Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs Electronics Letters. 42: 156-157. DOI: 10.1049/El:20064022 |
0.627 |
|
| 2006 |
Kudrawiec R, Gladysiewicz M, Misiewicz J, Yuen H, Bank S, Wistey M, Bae H, Harris JS. Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5μm Solid State Communications. 137: 138-141. DOI: 10.1016/J.Ssc.2005.11.006 |
0.692 |
|
| 2006 |
Kudrawiec R, Gladysiewicz M, Motyka M, Misiewicz J, Yuen H, Bank S, Wistey M, Bae H, Harris JS. Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms Applied Surface Science. 253: 152-157. DOI: 10.1016/J.Apsusc.2006.05.111 |
0.683 |
|
| 2005 |
Bank SR, Wistey MA, Yuen HB, Goddard LL, Bae H, Harris JS. Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 μm Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1337. DOI: 10.1116/1.1914825 |
0.823 |
|
| 2005 |
Wistey MA, Bank SR, Yuen HB, Goddard LL, Gugov T, Harris JS. Protecting wafer surface during plasma ignition using an arsenic cap Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1324. DOI: 10.1116/1.1914820 |
0.769 |
|
| 2005 |
Wistey MA, Bank SR, Yuen HB, Harris JS, Oye MM, Holmes AL. Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 460-464. DOI: 10.1116/1.1881635 |
0.676 |
|
| 2005 |
Yuen HB, Wistey MA, Bank SR, Bae H, Harris JS. Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1328. DOI: 10.1116/1.1881592 |
0.797 |
|
| 2005 |
Bank SR, Wistey MA, Yuen HB, Lordi V, Gambin VF, Harris JS. Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1320. DOI: 10.1116/1.1878995 |
0.792 |
|
| 2005 |
Bank SR, Goddard LL, Wistey MA, Yuen HB, Harris JS. On the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers Ieee Journal of Selected Topics in Quantum Electronics. 11: 1089-1098. DOI: 10.1109/Jstqe.2005.853852 |
0.616 |
|
| 2005 |
Lordi V, Yuen HB, Bank SR, Wistey MA, Harris JS, Friedrich S. Nearest-neighbor distributions inGa1−xInxNyAs1−yandGa1−xInxNyAs1−y−zSbzthin films upon annealing Physical Review B. 71. DOI: 10.1103/Physrevb.71.125309 |
0.801 |
|
| 2005 |
Kudrawiec R, Motyka M, Misiewicz J, Yuen HB, Bank SR, Wistey MA, Bae HP, Harris JS. Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11∕GaAs single quantum wells Journal of Applied Physics. 98: 63527. DOI: 10.1063/1.2060940 |
0.703 |
|
| 2005 |
Bank SR, Yuen HB, Wistey MA, Lordi V, Bae HP, Harris JS. Effects of growth temperature on the structural and optical properties of 1.55μm GaInNAsSb quantum wells grown on GaAs Applied Physics Letters. 87: 021908. DOI: 10.1063/1.1993772 |
0.81 |
|
| 2005 |
Oye MM, Wistey MA, Reifsnider JM, Agarwal S, Mattord TJ, Govindaraju S, Hallock GA, Holmes AL, Bank SR, Yuen HB, Harris JS. Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1940126 |
0.78 |
|
| 2005 |
Yuen HB, Bank SR, Wistey MA, Harris JS, Seong M, Yoon S, Kudrawiec R, Misiewicz J. Improved optical quality of GaNAsSb in the dilute Sb limit Journal of Applied Physics. 97: 113510. DOI: 10.1063/1.1926398 |
0.81 |
|
| 2005 |
Kudrawiec R, Ryczko K, Misiewicz J, Yuen HB, Bank SR, Wistey MA, Bae HP, Harris JS. Band-gap discontinuity in GaN0.02As0.87Sb0.11∕GaAs single-quantum wells investigated by photoreflectance spectroscopy Applied Physics Letters. 86: 141908. DOI: 10.1063/1.1897849 |
0.681 |
|
| 2005 |
Kudrawiec R, Sitarek P, Misiewicz J, Bank SR, Yuen HB, Wistey MA, Harris JJS. Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance Applied Physics Letters. 86: 91115. DOI: 10.1063/1.1873052 |
0.636 |
|
| 2005 |
Goddard LL, Bank SR, Wistey MA, Yuen HB, Rao Z, Harris JS. Recombination, gain, band structure, efficiency, and reliability of 1.5-μm GaInNAsSb/GaAs lasers Journal of Applied Physics. 97: 083101. DOI: 10.1063/1.1873035 |
0.811 |
|
| 2005 |
Kudrawiec R, Yuen HB, Ryczko K, Misiewicz J, Bank SR, Wistey MA, Bae HP, Harris JS. Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb∕GaAsN∕GaAs quantum well tailored at 1.5μm: The energy level structure and the Stokes shift Journal of Applied Physics. 97: 53515. DOI: 10.1063/1.1854729 |
0.68 |
|
| 2005 |
Wistey MA, Bank SR, Yuen HB, Bae H, Harris JS. Nitrogen plasma optimization for high-quality dilute nitrides Journal of Crystal Growth. 278: 229-233. DOI: 10.1016/J.Jcrysgro.2004.12.060 |
0.793 |
|
| 2004 |
Gugov T, Wistey M, Yuen H, Bank S, Harris JS. Structural Characterization of Molecular Beam Epitaxy Grown GaInNAs and GaInNAsSb Quantum Wells by Transmission Electron Microscopy Mrs Proceedings. 817. DOI: 10.1557/Proc-817-L6.40 |
0.808 |
|
| 2004 |
Wistey MA, Bank SR, Yuen HB, Goddard LL, Harris JS. GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.460 μm Journal of Vacuum Science & Technology B. 22: 1562-1564. DOI: 10.1116/1.1714940 |
0.657 |
|
| 2004 |
Fu J, Bank SR, Wistey MA, Yuen HB, Harris JS. Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 μm Journal of Vacuum Science & Technology B. 22: 1463-1467. DOI: 10.1116/1.1691411 |
0.82 |
|
| 2004 |
Gugov T, Gambin V, Wistey M, Yuen H, Bank S, Harris JS. Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 1588. DOI: 10.1116/1.1650853 |
0.808 |
|
| 2004 |
Bank SR, Wistey MA, Goddard LL, Yuen HB, Lordi V, Harris JS. Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs Ieee Journal of Quantum Electronics. 40: 656-664. DOI: 10.1109/Jqe.2004.828249 |
0.767 |
|
| 2004 |
Yuen HB, Bank SR, Wistey MA, Harris JS, Moto A. Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3–1.55μm Journal of Applied Physics. 96: 6375-6381. DOI: 10.1063/1.1807028 |
0.832 |
|
| 2004 |
Gollub D, Kamp M, Forchel A, Seufert J, Bank SR, Wistey MA, Yuen HB, Goddard LL, Harris JS. Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 μm Electronics Letters. 40: 1487-1488. DOI: 10.1049/El:20046601 |
0.609 |
|
| 2004 |
Bank SR, Wistey MA, Goddard LL, Yuen HB, Bae HP, Harris JS. High-performance 1.5 µm GaInNAsSb lasers grown on GaAs Electronics Letters. 40: 1186-1187. DOI: 10.1049/El:20046270 |
0.686 |
|
| 2003 |
Wistey MA, Bank SR, Yuen HB, Goddard LL, Harris JS. Monolithic, GaInNAsSb VCSELs at 1.46 [micro sign]m on GaAs by MBE Electronics Letters. 39: 1822. DOI: 10.1049/El:20031139 |
0.558 |
|
| 2003 |
Bank SR, Wistey MA, Yuen HB, Goddard LL, Ha W, Harris JS. Low-threshold CW GaInNAsSb∕GaAs laser at 1.49 [micro sign]m Electronics Letters. 39: 1445. DOI: 10.1049/El:20030928 |
0.589 |
|
| 2003 |
Bank SR, Ha W, Gambin V, Wistey M, Yuen H, Goddard L, Kim S, Harris JS. 1.5 μm GaInNAs(Sb) lasers grown on GaAs by MBE Journal of Crystal Growth. 251: 367-371. DOI: 10.1016/S0022-0248(02)02446-6 |
0.818 |
|
| 2003 |
Volz K, Gambin V, Ha W, Wistey MA, Yuen H, Bank S, Harris JS. The role of Sb in the MBE growth of (GaIn)(NAsSb) Journal of Crystal Growth. 251: 360-366. DOI: 10.1016/S0022-0248(02)02198-X |
0.687 |
|
| 2003 |
Gambin V, Lordi V, Ha W, Wistey M, Takizawa T, Uno K, Friedrich S, Harris J. Structural changes on annealing of MBE grown (Ga, In)(N, As) as measured by X-ray absorption fine structure Journal of Crystal Growth. 251: 408-411. DOI: 10.1016/S0022-0248(02)02194-2 |
0.73 |
|
| 2002 |
Gambin V, Ha W, Wistey M, Yuen H, Bank SR, Kim SM, Harris JS. GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy Ieee Journal of Selected Topics in Quantum Electronics. 8: 795-800. DOI: 10.1109/Jstqe.2002.800843 |
0.653 |
|
| 2002 |
Ha W, Gambin V, Bank S, Wistey M, Yuen H, Kim S, Harris JS. Long-wavelength GaInNAs(Sb) lasers on GaAs Ieee Journal of Quantum Electronics. 38: 1260-1267. DOI: 10.1109/Jqe.2002.802451 |
0.83 |
|
| 2002 |
Ha W, Gambin V, Wistey M, Bank S, Kim S, Harris JS. Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m Ieee Photonics Technology Letters. 14: 591-593. DOI: 10.1109/68.998694 |
0.737 |
|
| 2002 |
Ha W, Gambin V, Wistey M, Bank SR, Yuen H, Kim S, Harris JS. Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers Electronics Letters. 38: 277-278. DOI: 10.1049/El:20020207 |
0.693 |
|
| 2001 |
Gambin V, Ha W, Wistey M, Kim S, Harris JS. GaInNAs Material Properties for Long Wavelength Opto-Electronic Devices Mrs Proceedings. 692. DOI: 10.1557/Proc-692-H7.1.1 |
0.613 |
|
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