Gaurav Verma, Ph.D.
Affiliations: | 2004 | Stanford University, Palo Alto, CA |
Area:
Electronics and Electrical Engineering, Optics PhysicsGoogle:
"Gaurav Verma"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| John C. Bravman | grad student | 2004 | Stanford | |
| (Laser assisted fabrication of titanium salicide for deep sub-quarter micron MOSFETs.) | ||||
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Publications
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| Verma G, Gelatos C, Talwar S, et al. (2002) Formation of titanium silicide on narrow gates using laser thermal processing Ieee Transactions On Electron Devices. 49: 42-47 |
| Verma G, Talwar S, Bravman JC. (2001) Creating process margin in laser thermal processing: Application to formation of titanium silicide Applied Physics Letters. 78: 925-927 |
| Verma G, Talwar S, Bravman JC. (2000) Differential thermal budget in laser processing: Application to formation of titanium silicide Ieee Electron Device Letters. 21: 482-484 |
| Shamma N, Talwar S, Verma G, et al. (1997) Laser-Assisted TiSi 2 Formation for ULSI Applications Mrs Proceedings. 470: 265 |
| Verma G, Talwar S, Sigmon TW. (1996) Formation and control of phosphorus buried layers in silicon using a pulsed XeCl excimer laser Applied Physics Letters. 69: 319-321 |
| Verma G, Slaoui A, Talwar S, et al. (1995) Formation and Control of Boron Buried Layers in Silicon Using an Excimer Laser Ieee Electron Device Letters. 16: 14-16 |