| Year |
Citation |
Score |
| 2007 |
Tu R, Zhang L, Nishi Y, Dai H. Measuring the capacitance of individual semiconductor nanowires for carrier mobility assessment. Nano Letters. 7: 1561-5. PMID 17488051 DOI: 10.1021/Nl070378W |
0.564 |
|
| 2007 |
Paul BC, Tu R, Fujita S, Okajima M, Lee TH, Nishi Y. An Analytical Compact Circuit Model for Nanowire FET Ieee Transactions On Electron Devices. 54: 1637-1644. DOI: 10.1109/Ted.2007.899397 |
0.365 |
|
| 2006 |
Zhang L, Tu R, Dai H. Parallel core-shell metal-dielectric-semiconductor germanium nanowires for high-current surround-gate field-effect transistors. Nano Letters. 6: 2785-9. PMID 17163706 DOI: 10.1021/Nl061833B |
0.588 |
|
| 2006 |
Zhang G, Qi P, Wang X, Lu Y, Li X, Tu R, Bangsaruntip S, Mann D, Zhang L, Dai H. Selective etching of metallic carbon nanotubes by gas-phase reaction. Science (New York, N.Y.). 314: 974-7. PMID 17095698 DOI: 10.1126/Science.1133781 |
0.589 |
|
| 2005 |
Wang D, Tu R, Zhang L, Dai H. Deterministic one-to-one synthesis of germanium nanowires and individual gold nanoseed patterning for aligned nanowire arrays. Angewandte Chemie (International Ed. in English). 44: 2925-9. PMID 20058329 DOI: 10.1002/Anie.200500291 |
0.57 |
|
| 2005 |
Li Y, Peng S, Mann D, Cao J, Tu R, Cho KJ, Dai H. On the origin of preferential growth of semiconducting single-walled carbon nanotubes. The Journal of Physical Chemistry. B. 109: 6968-71. PMID 16851791 DOI: 10.1021/Jp050868H |
0.618 |
|
| 2005 |
Javey A, Tu R, Farmer DB, Guo J, Gordon RG, Dai H. High performance n-type carbon nanotube field-effect transistors with chemically doped contacts. Nano Letters. 5: 345-8. PMID 15794623 DOI: 10.1021/Nl047931J |
0.646 |
|
| 2003 |
Wang D, Wang Q, Javey A, Tu R, Dai H, Kim H, McIntyre PC, Krishnamohan T, Saraswat KC. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics Applied Physics Letters. 83: 2432-2434. DOI: 10.1063/1.1611644 |
0.625 |
|
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