| Year |
Citation |
Score |
| 2018 |
Fleetwood ZE, Ildefonso A, Tzintzarov GN, Wier B, Raghunathan U, Cho M, Song I, Wachter MT, Nergui D, Khachatrian A, Warner JH, McMarr P, Hughes H, Zhang E, McMorrow D, ... ... Jain V, et al. SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients Ieee Transactions On Nuclear Science. 65: 399-406. DOI: 10.1109/Tns.2017.2782183 |
0.343 |
|
| 2018 |
Wier BR, Raghunathan US, Fleetwood ZE, Oakley MA, Joseph AJ, Jain V, Cressler JD. Limiting Effects on the Design of Vertical Superjunction Collectors in SiGe HBTs Ieee Transactions On Electron Devices. 65: 793-797. DOI: 10.1109/Ted.2017.2782768 |
0.329 |
|
| 2016 |
Hoffman J, Martin-Gosse JR, Shopov S, Pekarik JJ, Camillo-Castillo R, Jain V, Harame D, Voinigescu SP. Analog circuit blocks for 80-GHz bandwidth frequency-interleaved, linear, large-swing front-ends Ieee Journal of Solid-State Circuits. 51: 1985-1993. DOI: 10.1109/Jssc.2016.2567445 |
0.38 |
|
| 2015 |
Rode JC, Chiang HW, Choudhary P, Jain V, Thibeault BJ, Mitchell WJ, Rodwell MJW, Urteaga M, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu AWK. Indium Phosphide Heterobipolar Transistor Technology beyond 1-THz Bandwidth Ieee Transactions On Electron Devices. 62: 2779-2785. DOI: 10.1109/Ted.2015.2455231 |
0.724 |
|
| 2015 |
Rode JC, Chiang HW, Choudhary P, Jain V, Thibeault BJ, Mitchell WJ, Rodwell MJW, Urteaga M, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu AWK. An InGaAs/InP DHBT with simultaneous fτ/fmax404/901 GHz and 4.3 v breakdown voltage Ieee Journal of the Electron Devices Society. 3: 54-57. DOI: 10.1109/Jeds.2014.2363178 |
0.734 |
|
| 2013 |
Lobisser E, Rode JC, Jain V, Chiang HW, Baraskar A, Mitchell WJ, Thibeault BJ, Rodwell MJW, Urteaga M, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu AWK. InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced Ccb and increased RF cut-off frequency Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 769-772. DOI: 10.1002/Pssc.201200674 |
0.656 |
|
| 2011 |
Jain V, Rodwell MJW. Transconductance degradation in near-THz InP double-heterojunction bipolar transistors Ieee Electron Device Letters. 32: 1068-1070. DOI: 10.1109/Led.2011.2157451 |
0.313 |
|
| 2011 |
Jain V, Lobisser E, Baraskar A, Thibeault BJ, Rodwell MJW, Griffith Z, Urteaga M, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu WK. InGaAs/InP DHBTs in a dry-etched refractory metal emitter process demonstrating simultaneous fτ/fmax ∼430/800GHz Ieee Electron Device Letters. 32: 24-26. DOI: 10.1109/Led.2010.2084069 |
0.65 |
|
| 2011 |
Seo M, Urteaga M, Hacker J, Young A, Griffith Z, Jain V, Pierson R, Rowell P, Skalare A, Peralta A, Lin R, Lin D, Pukala D, Rodwell M. InP HBT IC technology for terahertz frequencies: Fundamental oscillators Up to 0.57 THz Ieee Journal of Solid-State Circuits. 46: 2203-2214. DOI: 10.1109/Jssc.2011.2163213 |
0.713 |
|
| 2010 |
Baraskar A, Wistey MA, Jain V, Lobisser E, Singisetti U, Burek G, Lee YJ, Thibeault B, Gossard A, Rodwell M. Ex situ Ohmic contacts to n-InGaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C5l7-C5l9. DOI: 10.1116/1.3454372 |
0.65 |
|
| 2009 |
Baraskar AK, Wistey MA, Jain V, Singisetti U, Burek G, Thibeault BJ, Lee YJ, Gossard AC, Rodwell MJW. Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2036-2039. DOI: 10.1116/1.3182737 |
0.746 |
|
| 2008 |
Jain V, Rajbongshi BK, Mallajosyula AT, Bhattacharjya G, Iyer SSK, Ramanathan G. Photovoltaic effect in single-layer organic solar cell devices fabricated with two new imidazolin-5-one molecules Solar Energy Materials and Solar Cells. 92: 1043-1046. DOI: 10.1016/J.Solmat.2008.02.039 |
0.392 |
|
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