| Year |
Citation |
Score |
| 2020 |
Sharma S, Zeng K, Saha S, Singisetti U. Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage Ieee Electron Device Letters. 41: 836-839. DOI: 10.1109/Led.2020.2991146 |
0.353 |
|
| 2019 |
Randle M, Lipatov A, Kumar A, Dowben PA, Sinitskii A, Singisetti U, Bird JP. Reply to "Comment on 'Gate-Controlled Metal-Insulator Transition in TiS Nanowire Field-Effect Transistors'". Acs Nano. 13: 8498-8500. PMID 31454865 DOI: 10.1021/Acsnano.9B06062 |
0.307 |
|
| 2019 |
Zeng K, Vaidya A, Singisetti U. A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ · cm2 on-resistance Applied Physics Express. 12: 081003. DOI: 10.7567/1882-0786/Ab2E86 |
0.439 |
|
| 2019 |
Abuwasib M, Lee H, Lee J, Eom C, Gruverman A, Singisetti U. Characterization and Modeling of Co/BaTiO3/SrRuO3 Ferroelectric Tunnel Junction Memory by Capacitance–Voltage (${C}$ –${V}$ ), Current–Voltage (${I}$ –${V}$ ), and High- Frequency Measurements Ieee Transactions On Electron Devices. 66: 2186-2191. DOI: 10.1109/Ted.2019.2904019 |
0.381 |
|
| 2019 |
Chatterjee B, Zeng K, Nordquist CD, Singisetti U, Choi S. Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors Ieee Transactions On Components, Packaging and Manufacturing Technology. 9: 2352-2365. DOI: 10.1109/Tcpmt.2019.2923356 |
0.392 |
|
| 2019 |
Vaidya A, Sarker J, Zhang Y, Lubecki L, Wallace J, Poplawsky JD, Sasaki K, Kuramata A, Goyal A, Gardella JA, Mazumder B, Singisetti U. Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate Journal of Applied Physics. 126: 095702. DOI: 10.1063/1.5113509 |
0.347 |
|
| 2019 |
Kwan C, Street M, Mahmood A, Echtenkamp W, Randle M, He K, Nathawat J, Arabchigavkani N, Barut B, Yin S, Dixit R, Singisetti U, Binek C, Bird JP. Space-charge limited conduction in epitaxial chromia films grown on elemental and oxide-based metallic substrates Aip Advances. 9: 055018. DOI: 10.1063/1.5087832 |
0.301 |
|
| 2018 |
Randle M, Lipatov A, Kumar A, Kwan CP, Nathawat J, Barut B, Yin S, He K, Arabchigavkani N, Dixit R, Komesu T, Avila J, Asensio MC, Dowben PA, Sinitskii A, ... Singisetti U, et al. Gate-Controlled Metal-Insulator Transition in TiS Nanowire Field-Effect Transistors. Acs Nano. PMID 30586504 DOI: 10.1021/Acsnano.8B08260 |
0.322 |
|
| 2018 |
Zeng K, Vaidya A, Singisetti U. 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs Ieee Electron Device Letters. 39: 1385-1388. DOI: 10.1109/Led.2018.2859049 |
0.406 |
|
| 2018 |
Dowben PA, Binek C, Zhang K, Wang L, Mei W, Bird JP, Singisetti U, Hong X, Wang KL, Nikonov D. Towards a Strong Spin–Orbit Coupling Magnetoelectric Transistor Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 4: 1-9. DOI: 10.1109/Jxcdc.2018.2809640 |
0.326 |
|
| 2017 |
He G, Nathawat J, Kwan CP, Ramamoorthy H, Somphonsane R, Zhao M, Ghosh K, Singisetti U, Perea-López N, Zhou C, Elías AL, Terrones M, Gong Y, Zhang X, Vajtai R, et al. Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs. Scientific Reports. 7: 11256. PMID 28900169 DOI: 10.1038/S41598-017-11647-6 |
0.38 |
|
| 2017 |
Abuwasib M, Lee J, Lee H, Eom C, Gruverman A, Singisetti U. Sub-100 nm integrated ferroelectric tunnel junction devices using hydrogen silsesquioxane planarization Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 021803. DOI: 10.1116/1.4978519 |
0.426 |
|
| 2017 |
Zeng K, Wallace JS, Heimburger C, Sasaki K, Kuramata A, Masui T, Gardella JA, Singisetti U. Ga2O3MOSFETs Using Spin-On-Glass Source/Drain Doping Technology Ieee Electron Device Letters. 38: 513-516. DOI: 10.1109/Led.2017.2675544 |
0.44 |
|
| 2017 |
Zeng K, Singisetti U. Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations Applied Physics Letters. 111: 122108. DOI: 10.1063/1.4991400 |
0.33 |
|
| 2017 |
Jia Y, Zeng K, Singisetti U. Interface characterization of atomic layer deposited high-k on non-polar GaN Journal of Applied Physics. 122: 154104. DOI: 10.1063/1.4986215 |
0.421 |
|
| 2016 |
Jia Y, Dabiran AM, Singisetti U. Electrical characterization of atomic layer deposited Al2O3/InN interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4936928 |
0.373 |
|
| 2016 |
Zeng K, Jia Y, Singisetti U. Interface State Density in Atomic Layer Deposited SiO2/β-Ga2O3 (2-01) MOSCAPs Ieee Electron Device Letters. 37: 906-909. DOI: 10.1109/Led.2016.2570521 |
0.339 |
|
| 2016 |
Abuwasib M, Lu H, Li T, Buragohain P, Lee H, Eom CB, Gruverman A, Singisetti U. Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions Applied Physics Letters. 108. DOI: 10.1063/1.4947020 |
0.397 |
|
| 2015 |
He G, Ghosh K, Singisetti U, Ramamoorthy H, Somphonsane R, Bohra G, Matsunaga M, Higuchi A, Aoki N, Najmaei S, Gong Y, Zhang X, Vajtai R, Ajayan PM, Bird JP. Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation. Nano Letters. PMID 26121164 DOI: 10.1021/Acs.Nanolett.5B01159 |
0.395 |
|
| 2015 |
Wistey MA, Baraskar AK, Singisetti U, Burek GJ, Shin B, Kim E, McIntyre PC, Gossard AC, Rodwell MJW. Control of InGaAs and InAs facets using metal modulation epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4905497 |
0.728 |
|
| 2015 |
Abuwasib M, Lee H, Gruverman A, Eom CB, Singisetti U. Contact resistance to SrRuO3 and La0.67Sr0.33MnO3 epitaxial films Applied Physics Letters. 107. DOI: 10.1063/1.4938143 |
0.422 |
|
| 2015 |
Jia Y, Zeng K, Wallace JS, Gardella JA, Singisetti U. Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β -Ga2O3 (2 ¯ 01) Applied Physics Letters. 106. DOI: 10.1063/1.4915262 |
0.362 |
|
| 2015 |
Ghosh K, Singisetti U. Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices Journal of Applied Physics. 117. DOI: 10.1063/1.4907800 |
0.337 |
|
| 2015 |
Jia Y, Wallace JS, Qin Y, Gardella JA, Dabiran AM, Singisetti U. Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride Journal of Electronic Materials. DOI: 10.1007/S11664-015-4175-9 |
0.325 |
|
| 2014 |
Ghosh K, Singisetti U. RF performance and avalanche breakdown analysis of InN tunnel FETs Ieee Transactions On Electron Devices. 61: 3405-3410. DOI: 10.1109/Ted.2014.2344914 |
0.409 |
|
| 2013 |
Wong MH, Keller S, Dasgupta NS, Denninghoff DJ, Kolluri S, Brown DF, Lu J, Fichtenbaum NA, Ahmadi E, Singisetti U, Chini A, Rajan S, Denbaars SP, Speck JS, Mishra UK. N-polar GaN epitaxy and high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074009 |
0.405 |
|
| 2013 |
Singisetti U, Wong MH, Mishra UK. High-performance N-polar GaN enhancement-mode device technology Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074006 |
0.367 |
|
| 2012 |
Wong MH, Singisetti U, Lu J, Speck JS, Mishra UK. Anomalous output conductance in N-polar GaN high electron mobility transistors Ieee Transactions On Electron Devices. 59: 2988-2995. DOI: 10.1109/Ted.2012.2211599 |
0.397 |
|
| 2012 |
Singisetti U, Wong MH, Speck JS, Mishra UK. Enhancement-mode N-polar GaN MOS-HFET with 5-nm GaN channel, 510-mS/mm g m, and 0.66-Ω • mm R on Ieee Electron Device Letters. 33: 26-28. DOI: 10.1109/Led.2011.2170656 |
0.4 |
|
| 2012 |
Singisetti U, Hoi Wong M, Mishra UK. Interface roughness scattering in ultra-thin N-polar GaN quantum well channels Applied Physics Letters. 101. DOI: 10.1063/1.4732795 |
0.34 |
|
| 2011 |
Singisetti U, Wong MH, Dasgupta S, Speck JS, Mishra UK. Enhancement-mode N-polar GaN metal-insulator-semiconductor field effect transistors with current gain cutoff frequency of 120GHz Applied Physics Express. 4. DOI: 10.1143/Apex.4.024103 |
0.444 |
|
| 2011 |
Singisetti U, Wong MH, Dasgupta S, Nidhi, Swenson B, Thibeault BJ, Speck JS, Mishra UK. Enhancement-mode n-polar GaN MISFETs with self-aligned source/drain regrowth Ieee Electron Device Letters. 32: 137-139. DOI: 10.1109/Led.2010.2090125 |
0.417 |
|
| 2011 |
Nidhi, Dasgupta S, Brown DF, Singisetti U, Keller S, Speck JS, Mishra UK. Self-aligned technology for N-polar GaN/Al(Ga)N MIS-HEMTs Ieee Electron Device Letters. 32: 33-35. DOI: 10.1109/Led.2010.2086427 |
0.472 |
|
| 2010 |
Baraskar A, Wistey MA, Jain V, Lobisser E, Singisetti U, Burek G, Lee YJ, Thibeault B, Gossard A, Rodwell M. Ex situ Ohmic contacts to n-InGaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C5l7-C5l9. DOI: 10.1116/1.3454372 |
0.726 |
|
| 2010 |
Baraskar A, Jain V, Wistey MA, Singisetti U, Lee YJ, Thibeault B, Gossard A, Rodwell MJW. High doping effects on in-situ Ohmic contacts to n-InAs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 481-484. DOI: 10.1109/ICIPRM.2010.5516269 |
0.739 |
|
| 2010 |
Rodwell MJW, Singisetti U, Wistey M, Burek GJ, Carter A, Baraskar A, Law J, Thibeault BJ, Kim EJ, Shin B, Lee YJ, Steiger S, Lee S, Ryu H, Tan Y, et al. III-V MOSFETs: Scaling laws, scaling limits, fabrication processes Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 25-30. DOI: 10.1109/ICIPRM.2010.5515914 |
0.664 |
|
| 2010 |
Singisetti U, Wong MH, Dasgupta S, Nidhi, Swenson BL, Thibeault BJ, Speck JS, Mishra UK. Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth Device Research Conference - Conference Digest, Drc. 191-192. DOI: 10.1109/DRC.2010.5551902 |
0.337 |
|
| 2009 |
Baraskar AK, Wistey MA, Jain V, Singisetti U, Burek G, Thibeault BJ, Lee YJ, Gossard AC, Rodwell MJW. Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2036-2039. DOI: 10.1116/1.3182737 |
0.796 |
|
| 2009 |
Singisetti U, Wistey MA, Burek GJ, Baraskar AK, Thibeault BJ, Gossard AC, Rodwell MJW, Shin B, Kim EJ, McIntyre PC, Yu B, Yuan Y, Wang D, Taur Y, Asbeck P, et al. In0.53Ga0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth Ieee Electron Device Letters. 30: 1128-1130. DOI: 10.1109/Led.2009.2031304 |
0.736 |
|
| 2009 |
Singisetti U, Wistey MA, Burek GJ, Baraskar AK, Cagnon J, Thibeault B, Gossard AC, Stemmer S, Rodwell MJW, Kim E, Shin B, McIntyre PC, Lee YJ. Enhancement Mode In0.53Ga0.47As MOSFET with self-aligned epitaxial Source/Drain regrowth Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 120-123. DOI: 10.1109/ICIPRM.2009.5012456 |
0.724 |
|
| 2009 |
Jain V, Baraskar AK, Wistey MA, Singisetti U, Griffith Z, Lobisser E, Thibeault BJ, Gossard AC, Rodwell MJW. Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 358-361. DOI: 10.1109/ICIPRM.2009.5012438 |
0.739 |
|
| 2009 |
Singisetti U, Wistey MA, Burek GJ, Baraskar AK, Cagnon J, Thibeault BJ, Stemmer S, Gossard AC, Rodwell MJW, Kim E, Shin B, McIntyre PC, Lee YJ. 37 mS/μm In0.53Ga0.47as MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain Device Research Conference - Conference Digest, Drc. 253-254. DOI: 10.1109/DRC.2009.5354901 |
0.73 |
|
| 2009 |
Singisetti U, Zimmerman JD, Wistey MA, Cagnon J, Thibeault BJ, Rodwell MJW, Gossard AC, Stemmer S, Bank SR. ErAs epitaxial Ohmic contacts to InGaAs/InP Applied Physics Letters. 94. DOI: 10.1063/1.3087313 |
0.654 |
|
| 2009 |
Burek GJ, Wistey MA, Singisetti U, Nelson A, Thibeault BJ, Bank SR, Rodwell MJW, Gossard AC. Height-selective etching for regrowth of self-aligned contacts using MBE Journal of Crystal Growth. 311: 1984-1987. DOI: 10.1016/J.Jcrysgro.2008.11.012 |
0.635 |
|
| 2009 |
Singisetti U, Wistey MA, Burek GJ, Arkun E, Baraskar AK, Sun Y, Kiewra EW, Thibeault BJ, Gossard AC, Palmstrøm CJ, Rodwell MJW. InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 1394-1398. DOI: 10.1002/Pssc.200881532 |
0.741 |
|
| 2008 |
Singisetti U, Wistey MA, Zimmerman JD, Thibeault BJ, Rodwell MJW, Gossard AC, Bank SR. Ultralow resistance in situ Ohmic contacts to InGaAs/InP Applied Physics Letters. 93. DOI: 10.1063/1.3013572 |
0.662 |
|
| 2007 |
Rodwell M, Lind E, Griffith Z, Bank SR, Crook AM, Singisetti U, Wistey M, Burek G, Gossard AC. Frequency limits of InP-based integrated circuits Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 9-13. DOI: 10.1109/ICIPRM.2007.380676 |
0.563 |
|
| 2006 |
Rodwell M, Griffith Z, Parthasarathy N, Singisetti U, Paidi V, Urteaga M, Pierson R, Rowell P, Brar B. Frequency limits of bipolar integrated circuits Ieee Mtt-S International Microwave Symposium Digest. 329-332. DOI: 10.1109/MWSYM.2006.249518 |
0.752 |
|
| 2006 |
Parthasarathy N, Griffith Z, Kadow C, Singisetti U, Rodwell MJW, Fang XM, Loubychev D, Wu Y, Fastenau JM, Liu AWK. Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process Ieee Electron Device Letters. 27: 313-316. DOI: 10.1109/Led.2006.872836 |
0.734 |
|
| 2006 |
Parthasarathy N, Griffith Z, Kadow C, Singisetti U, Rodwell MJW, Urteaga M, Shinohara K, Brar B. Selectively implanted subcollector DHBTs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 2006: 104-107. |
0.561 |
|
| 2005 |
Rodwell M, Griffith Z, Paidi V, Parthasarathy N, Sheldon C, Singisetti U, Urteaga M, Pierson R, Rowell P, Brar B. InP HBT digital ICs and MMICs in the 140-220 GHz band The Joint 30th International Conference On Infrared and Millimeter Waves and 13th International Conference On Terahertz Electronics, 2005. Irmmw-Thz 2005. 2: 620-621. |
0.753 |
|
| 2003 |
Chakraborty PS, McCartney MR, Li J, Gopalan C, Singisetti U, Goodnick SM, Thornton TJ, Kozicki MN. Electron holographic characterization of nanoscale charge distributions for ultra shallow PN junctions in Si Physica E: Low-Dimensional Systems and Nanostructures. 19: 167-172. DOI: 10.1016/S1386-9477(03)00302-3 |
0.344 |
|
| 2003 |
Singisetti U, McCartney MR, Li J, Chakraborty PS, Goodnick SM, Kozicki MN, Thornton TJ. Two-dimensional electrical characterization of ultrashallow source/drain extensions for nanoscale MOSFETs Superlattices and Microstructures. 34: 301-310. DOI: 10.1016/J.Spmi.2004.03.020 |
0.305 |
|
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