Darren A. DeNardis, Ph.D. - Publications

Affiliations: 
2006 University of Arizona, Tucson, AZ 
Area:
Chemical Engineering

14 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2010 DeNardis D, Rosales-Yeomans D, Borucki L, Philipossian A. Studying the effect of temperature on the copper oxidation process using hydrogen peroxide for use in multi-step chemical mechanical planarization models Thin Solid Films. 518: 3903-3909. DOI: 10.1016/J.Tsf.2009.12.089  0.774
2010 DeNardis D, Rosales-Yeomans D, Borucki L, Philipossian A. A three-step copper chemical mechanical planarization model including the dissolution effects of a commercial slurry Thin Solid Films. 518: 3910-3916. DOI: 10.1016/J.Tsf.2009.12.088  0.784
2008 Rosales-Yeomans D, DeNardis D, Borucki L, Suzuki T, Sampurno Y, Philipossian A. Evaluation of Pad Groove Designs under Reduced Slurry Flow Rate Conditions during Copper CMP Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2966692  0.731
2008 Rosales-Yeomans D, DeNardis D, Borucki L, Suzuki T, Philipossian A. Analysis of pads with slanted grooves for copper CMP Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2963345  0.788
2008 Rosales-Yeomans D, Denardis D, Borucki L, Philipossian A. Design and evaluation of pad grooves for copper CMP Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2963268  0.786
2007 Lee H, DeNardis D, Philipossian A, Seike Y, Takaoka M, Miyachi K, Furukawa S, Terada A, Zhuang Y, Borucki L. Thermal, Tribological, and Removal Rate Characteristics of Pad Conditioning in Copper CMP Transactions On Electrical and Electronic Materials. 8: 67-72. DOI: 10.4313/Teem.2007.8.2.067  0.699
2007 Lee H, DeNardis D, Philipossian A, Seike Y, Takaoka M, Miyachi K, Doi T. Development of a Pad Conditioning Method for ILD CMP using a High Pressure Micro Jet System Transactions On Electrical and Electronic Materials. 8: 26-31. DOI: 10.4313/Teem.2007.8.1.026  0.691
2006 Denardis D, Doi T, Hiskey B, Ichikawa K, Ichikawa D, Philipossian A. Modeling copper CMP removal rate dependency on wafer pressure, velocity, and dissolved oxygen concentration Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2180627  0.691
2006 DeNardis D, Seike Y, Takaoka M, Miyachi K, Philipossian A. Investigation of high-pressure micro jet technology as an alternative to diamond disc conditioning in ILD CMP Wear. 260: 1224-1231. DOI: 10.1016/J.Wear.2005.08.002  0.626
2005 Denardis D, Doi T, Hiskey B, Ichikawa K, Ichikawa D, Philipossian A. Impact of gaseous additives on copper CMP in neutral and alkaline solutions using a CAP system Journal of the Electrochemical Society. 152. DOI: 10.1149/1.2042908  0.669
2005 Seike Y, Denardis D, Sugiyama M, Miyachi K, Doi T, Philipossian A. Development and analysis of a high-pressure micro jet pad conditioning system for interlayer dielectric chemical mechanical planarization Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 1225-1231. DOI: 10.1143/Jjap.44.1225  0.6
2005 DeNardis D, Rosales-Yeomans D, Borucki L, Philipossian A. Characterization of copper-hydrogen peroxide film growth kinetics 2005 Proceedings - 22nd International Vlsi Multilevel Interconnection Conference, Vmic 2005. 620-624. DOI: 10.1016/J.Tsf.2006.02.010  0.748
2004 Sorooshian J, DeNardis D, Charns L, Li Z, Shadman F, Boning D, Hetherington D, Philipossian A. Arrhenius Characterization of ILD and Copper CMP Processes Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1635388  0.732
2003 DeNardis D, Sorooshian J, Habiro M, Rogers C, Philipossian A. Tribology and Removal Rate Characteristics of Abrasive-Free Slurries for Copper CMP Applications Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42: 6809-6814. DOI: 10.1143/Jjap.42.6809  0.756
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