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Roman V. Drachev, Ph.D. - Publications

Affiliations: 
2002 University of South Carolina, Columbia, SC 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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23 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Raghavan PS, Drachev R, Bathey B, Chou H. A Comparative Study of the Crystal Growth Techniques of Silicon Carbide, Technology Adaption and the Road to Low Cost Silicon Carbide Materials Materials Science Forum. 963: 51-55. DOI: 10.4028/Www.Scientific.Net/Msf.963.51  0.445
2012 Wu F, Wang H, Byrappa S, Raghothamachar B, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Synchrotron X-ray topography studies of the propagation and post-growth mutual interaction of threading growth dislocations with C-component of Burgers vector in PVT-Grown 4H-SiC Materials Science Forum. 717: 343-346. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.343  0.398
2012 Wang H, Byrappa S, Wu F, Raghothamachar B, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Basal plane dislocation multiplication via the hopping Frank-Read source mechanism and observations of prismatic glide in 4H-SiC Materials Science Forum. 717: 327-330. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.327  0.359
2012 Wang H, Wu F, Byrappa S, Sun S, Raghothamachar B, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC Applied Physics Letters. 100. DOI: 10.1063/1.4704679  0.366
2011 Dudley M, Wang H, Wu F, Byrappa S, Raghothamachar B, Choi G, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Formation mechanism of stacking faults in PVT 4H-SiC created by deflection of threading dislocations with burgers vector c+a Materials Science Forum. 679: 269-272. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.269  0.389
2011 Dudley M, Wu F, Wang H, Byrappa S, Raghothamachar B, Choi G, Sun S, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H-SiC Applied Physics Letters. 98. DOI: 10.1063/1.3597226  0.366
2010 Dudley M, Zhang N, Zhang Y, Raghothamachar B, Byrappa S, Choi G, Sanchez EK, Hansen D, Drachev R, Loboda MJ. Characterization of 100 mm diameter 4H-Silicon carbide crystals with extremely low basal plane dislocation density Materials Science Forum. 645: 291-294. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.291  0.397
2010 Dudley M, Byrappa S, Wang H, Wu F, Zhang Y, Raghothamachar B, Choi G, Sanchez E, Hansen D, Drachev R, Loboda M. Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals Mrs Proceedings. 1246. DOI: 10.1557/Proc-1246-B02-02  0.397
2010 Hansen DM, Loboda MJ, Drachev RV, Sanchez EK, Zhang J, Carlson EP, Wan J, Chung G. Defect reduction in SiC growth using Physical Vapor Transport Materials Research Society Symposium Proceedings. 1246: 21-26. DOI: 10.1557/Proc-1246-B01-04  0.515
2010 Drachev RV, Hansen DM, Loboda MJ. Boule shape dependence of shear and von-Mises stress distributions in bulk SiC during sublimation growth Materials Research Society Symposium Proceedings. 1246: 15-20. DOI: 10.1557/Proc-1246-B01-03  0.485
2007 Tupitsyn EY, Arulchakkaravarthi A, Drachev RV, Sudarshan TS. Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth Journal of Crystal Growth. 299: 70-76. DOI: 10.1016/J.Jcrysgro.2006.10.258  0.562
2006 Drachev R, Deyneka E, Rhodes C, Schupp J, Sudarshan TS. Fundamental limitations of SiC PVT growth reactors with cylindrical heaters Materials Science Forum. 15-20. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.15  0.602
2004 Drachev RV, Cherednichenko DI, Sudarshan TS. Analysis of in situ off-axis seeding surface preparation conditions for SiC PVT growth Journal of Crystal Growth. 265: 179-183. DOI: 10.1016/J.Jcrysgro.2004.01.062  0.54
2004 Cherednichenko DI, Drachev RV, Sudarshan TS. Self-congruent process of SiC growth by physical vapor transport Journal of Crystal Growth. 262: 175-181. DOI: 10.1016/J.Jcrysgro.2003.09.048  0.669
2003 Drachev R, Cherednichenko DI, Khlebnikov II, Khlebnikov YI, Sudarshan TS. Graphitization of the seeding surface during the heating stage of SiC PVT bulk growth Materials Science Forum. 433: 99-102. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.99  0.672
2002 Cherednichenko DI, Khlebnikov YI, Drachev R, Khlebnikov II, Sudarshan TS. Influence of the Crystal Thickness on the SiC PVT Growth Rate Materials Science Forum. 95-98. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.95  0.727
2002 Cherednichenko DI, Drachev RV, Khlebnikov II, Deng X, Sudarshan TS. Thermal stress as the major factor of defect generation in SiC during PVT growth Mrs Proceedings. 742. DOI: 10.1557/Proc-742-K2.18  0.577
2002 Cherednichenko DI, Drachev RV, Khlebnikov II, Deng X, Sudarshan TS. Thermal stress as the major factor of defect generation in SiC during PVT growth Materials Research Society Symposium - Proceedings. 742: 131-136.  0.338
2002 Cherednichenko DI, Khlebnikov YI, Drachev RV, Khlebnikov II, Sudarshan TS. Influence of the crystal thickness on the SiC PVT growth rate Materials Science Forum. 389: 95-98.  0.737
2001 Cherednichenko DI, Khlebnikov YI, Khlebnikov II, Drachev RV, Sudarshan TS. Dislocations as a source of micropipe development in the growth of silicon carbide Journal of Applied Physics. 89: 4139-4141. DOI: 10.1063/1.1332422  0.705
2001 Drachev RV, Straty GD, Cherednichenko DI, Khlebnikov II, Sudarshan TS. Liquid phase silicon at the front of crystallization during SiC PVT growth Journal of Crystal Growth. 233: 541-547. DOI: 10.1016/S0022-0248(01)01604-9  0.625
2001 Khlebnikov YI, Drachev RV, Rhodes CA, Cherednichenko DI, Khlebnikov II, Sudarshan TS. Point and planar defect formation in SiC during PVT growth Materials Research Society Symposium - Proceedings. 640.  0.715
2000 Khlebnikov YI, Drachev RV, Rhodes CA, Cherednichenko DI, Khlebnikov II, Sudarshan TS. Point and planar defect formation in SiC during PVT growth Mrs Proceedings. 640. DOI: 10.1557/Proc-640-H5.1  0.722
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