| Year |
Citation |
Score |
| 2018 |
Tapriya A, Novak B, Williams S, Kurinec S. Shallow Si N + P junction diodes realized via molecular monolayer doping Microelectronic Engineering. 193: 1-6. DOI: 10.1016/J.Mee.2018.02.008 |
0.364 |
|
| 2015 |
MacMahon D, Florent K, Kurinec S. Layered structure of MoS2 investigated using electron energy loss spectroscopy Materials Letters. 161: 96-99. DOI: 10.1016/J.Matlet.2015.08.083 |
0.343 |
|
| 2012 |
Devasia A, MacMahon D, Raoux S, Campbell KA, Kurinec SK. Investigation of inter-diffusion in bilayer GeTe/SnSe phase change memory films Thin Solid Films. 520: 3931-3935. DOI: 10.1016/J.Tsf.2012.02.005 |
0.609 |
|
| 2011 |
Panferov A, Kurinec SK. Modeling Quantum Efficiency of Ultraviolet 6H–SiC Photodiodes Ieee Transactions On Electron Devices. 58: 3976-3983. DOI: 10.1109/Ted.2011.2165720 |
0.318 |
|
| 2011 |
Josan GS, Devasia A, Rommel S, Kurinec SK. Simulation and verification of void transfer patterning (VTP) technique for nm-scale features Microelectronic Engineering. 88: 53-59. DOI: 10.1016/J.Mee.2010.08.020 |
0.565 |
|
| 2010 |
Devasia A, Kurinec S, Campbell KA, Raoux S. Influence of Sn Migration on phase transition in GeTe and Ge2 Se3 thin films Applied Physics Letters. 96. DOI: 10.1063/1.3385781 |
0.592 |
|
| 2009 |
Mukherjee SS, Kurinec SK. A stable SPICE macro-model for magnetic tunnel junctions for applications in memory and logic circuits Ieee Transactions On Magnetics. 45: 3260-3268. DOI: 10.1109/Tmag.2009.2021263 |
0.549 |
|
| 2009 |
Mukherjee SS, Bai F, MacMahon D, Lee CL, Gupta SK, Kurinec SK. Crystallization and grain growth behavior of CoFeB and MgO layers in multilayer magnetic tunnel junctions Journal of Applied Physics. 106. DOI: 10.1063/1.3176501 |
0.589 |
|
| 2009 |
Mukherjee SS, MacMahon D, Bai F, Lee CL, Kurinec SK. Study of boron diffusion in MgO in CoFeB|MgO film stacks using parallel electron energy loss spectroscopy Applied Physics Letters. 94. DOI: 10.1063/1.3090035 |
0.596 |
|
| 2007 |
Barron LW, Neidrich J, Kurinec SK. Optical, electrical, and structural properties of sputtered aluminum alloy thin films with copper, titanium and chromium additions Thin Solid Films. 515: 3363-3372. DOI: 10.1016/J.Tsf.2006.09.030 |
0.344 |
|
| 2006 |
Washburn C, Jorne J, Kurinec S. Cathodic Electrophoretic Deposition of Ceramic Nano-Particle Manganese Zinc Ferrite Key Engineering Materials. 314: 127-132. DOI: 10.4028/Www.Scientific.Net/Kem.314.127 |
0.383 |
|
| 2004 |
Chung SY, Jin N, Berger PR, Yu R, Thompson PE, Lake R, Rommel SL, Kurinec SK. Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration Applied Physics Letters. 84: 2688-2690. DOI: 10.1063/1.1690109 |
0.334 |
|
| 2004 |
Sudirgo S, Nandgaonkar RP, Curanovic B, Hebding JL, Saxer RL, Islam SS, Hirschman KD, Rommel SL, Kurinec SK, Thompson PE, Jin N, Berger PR. Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation Solid-State Electronics. 48: 1907-1910. DOI: 10.1016/J.Sse.2004.05.034 |
0.33 |
|
| 2003 |
Jin N, Chung SY, Rice AT, Berger PR, Thompson PE, Rivas C, Lake R, Sudirgo S, Kempisty JJ, Curanovic B, Rommel SL, Hirschman KD, Kurinec SK, Chi PH, Simons DS. Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions Ieee Transactions On Electron Devices. 50: 1876-1884. DOI: 10.1109/Ted.2003.815375 |
0.399 |
|
| 1998 |
Langley RJ, Pettis GF, Kurinec SK, Potter MD. A new material for thin‐film low‐voltage blue phosphors Journal of the Society For Information Display. 6: 181-184. DOI: 10.1889/1.1985231 |
0.374 |
|
| 1996 |
Smith BW, Butt S, Alam Z, Kurinec S, Lane RL. Attenuated phase shift mask materials for 248 and 193 nm lithography Journal of Vacuum Science & Technology B. 14: 3719-3723. DOI: 10.1116/1.588655 |
0.372 |
|
| 1994 |
Duttagupta SP, Fauchet PM, Peng C, Kurinec S, Hirschman K, Blanton TN. Micron-Size and Submicron-Size Light-Emitting Porous Silicon Structures Mrs Proceedings. 358. DOI: 10.1557/Proc-358-647 |
0.339 |
|
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