| Year |
Citation |
Score |
| 2009 |
Yu R, Anisha R, Jin N, Chung S, Berger PR, Gramila TJ, Thompson PE. Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si∕SiGe resonant interband tunnel diodes via electron tunneling spectroscopy Journal of Applied Physics. 106: 034501. DOI: 10.1063/1.3187832 |
0.827 |
|
| 2008 |
Anisha R, Jin N, Chung S, Yu R, Berger PR, Thompson PE. Strain engineered Si∕SiGe resonant interband tunneling diodes with outside barriers grown on Si0.8Ge0.2 virtual substrates Applied Physics Letters. 93: 102113. DOI: 10.1063/1.2981211 |
0.84 |
|
| 2007 |
Choi S, Jin N, Kumar V, Adesida I, Shannon M. Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 2085. DOI: 10.1116/1.2794315 |
0.395 |
|
| 2007 |
Chung S, Jin N, Pavlovicz RE, Yu R, Berger PR, Thompson PE. Analysis of the Voltage Swing for Logic and Memory Applications in Si/SiGe Resonant Interband Tunnel Diodes Grown by Molecular Beam Epitaxy Ieee Transactions On Nanotechnology. 6: 158-163. DOI: 10.1109/Tnano.2007.891831 |
0.823 |
|
| 2007 |
Memis OG, Katsnelson A, Kong SC, Mohseni H, Yan M, Zhang S, Hossain T, Jin N, Adesida I. A photon detector with very high gain at low bias and at room temperature Applied Physics Letters. 91. DOI: 10.1063/1.2802043 |
0.377 |
|
| 2006 |
Jin N, Chung S, Yu R, Heyns RM, Berger PR, Thompson PE. The Effect of Spacer Thicknesses on Si-Based Resonant Interband Tunneling Diode Performance and Their Application to Low-Power Tunneling Diode SRAM Circuits Ieee Transactions On Electron Devices. 53: 2243-2249. DOI: 10.1109/Ted.2006.879678 |
0.842 |
|
| 2006 |
Chung S, Yu R, Jin N, Park S, Berger PR, Thompson PE. Si/SiGe resonant interband tunnel diode with f/sub r0/ 20.2 GHz and peak current density 218 kA/cm/sup 2/ for K-band mixed-signal applications Ieee Electron Device Letters. 27: 364-367. DOI: 10.1109/Led.2006.873379 |
0.814 |
|
| 2005 |
Jin N, Chung S, Yu R, Giacomo SJD, Berger PR, Thompson PE. RF performance and modeling of Si/SiGe resonant interband tunneling diodes Ieee Transactions On Electron Devices. 52: 2129-2135. DOI: 10.1109/Ted.2005.856183 |
0.847 |
|
| 2005 |
Jin N, Yu R, Chung S, Berger PR, Thompson PE, Fay P. High sensitivity Si-based backward diodes for zero-biased square-law detection and the effect of post-growth annealing on performance Ieee Electron Device Letters. 26: 575-578. DOI: 10.1109/Led.2005.852738 |
0.838 |
|
| 2005 |
Jin N, Chung S, Yu R, Berger P, Thompson P. Temperature dependent DC∕RF performance of Si∕SiGe resonant interband tunnelling diodes Electronics Letters. 41: 559. DOI: 10.1049/El:20050020 |
0.82 |
|
| 2005 |
Jin N, Chung SY, Heyns RM, Berger PR, Yu R, Thompson PE, Rommel SL. Phosphorus diffusion in Si-based resonant interband tunneling diodes and tri-state logic using vertically stacked diodes Materials Science in Semiconductor Processing. 8: 411-416. DOI: 10.1016/J.Mssp.2004.09.080 |
0.838 |
|
| 2004 |
Jin N, Chung SY, Heyns RM, Berger PR, Yu R, Thompson PE, Rommel SL. Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR Ieee Electron Device Letters. 25: 646-648. DOI: 10.1109/Led.2004.833845 |
0.827 |
|
| 2004 |
Chung S, Jin N, Pavlovicz RE, Berger PR, Yu R, Fang Z, Thompson PE. Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy Journal of Applied Physics. 96: 747-753. DOI: 10.1063/1.1755436 |
0.839 |
|
| 2004 |
Weaver BD, Thompson PE, Jin N, Chung SY, Rice AT, Berger PR. Radiation tolerance of Si/Si 0.6Ge 0.4 resonant interband tunneling diodes Journal of Applied Physics. 95: 6406-6408. DOI: 10.1063/1.1710719 |
0.856 |
|
| 2004 |
Chung SY, Jin N, Berger PR, Yu R, Thompson PE, Lake R, Rommel SL, Kurinec SK. Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration Applied Physics Letters. 84: 2688-2690. DOI: 10.1063/1.1690109 |
0.836 |
|
| 2004 |
Jin N, Chung S, Yu R, Berger P, Thompson P. Improved vertically stacked Si∕SiGe resonant interband tunnel diode pair with small peak voltage shift and unequal peak currents Electronics Letters. 40: 1548. DOI: 10.1049/El:20046078 |
0.835 |
|
| 2004 |
Sudirgo S, Nandgaonkar RP, Curanovic B, Hebding JL, Saxer RL, Islam SS, Hirschman KD, Rommel SL, Kurinec SK, Thompson PE, Jin N, Berger PR. Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation Solid-State Electronics. 48: 1907-1910. DOI: 10.1016/J.Sse.2004.05.034 |
0.854 |
|
| 2003 |
Jin N, Chung SY, Rice AT, Berger PR, Thompson PE, Rivas C, Lake R, Sudirgo S, Kempisty JJ, Curanovic B, Rommel SL, Hirschman KD, Kurinec SK, Chi PH, Simons DS. Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions Ieee Transactions On Electron Devices. 50: 1876-1884. DOI: 10.1109/Ted.2003.815375 |
0.815 |
|
| 2003 |
Jin N, Chung SY, Rice AT, Berger PR, Yu R, Thompson PE, Lake R. 151 kA/cm2 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications Applied Physics Letters. 83: 3308-3310. DOI: 10.1063/1.1618927 |
0.823 |
|
| 2003 |
Chung SY, Jin N, Rice AT, Berger PR, Yu R, Fang ZQ, Thompson PE. Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy Journal of Applied Physics. 93: 9104-9110. DOI: 10.1063/1.1569029 |
0.786 |
|
| 2001 |
Jin N, Berger PR, Rommel SL, Thompson PE, Hobart KP. pnp Si resonant interband tunnel diode with symmetrical NDR Electronics Letters. 37: 1412-1414. DOI: 10.1049/El:20010961 |
0.837 |
|
| Show low-probability matches. |