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Chia-Yen Huang, Ph.D. - Publications

Affiliations: 
2012 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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16 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Huang CY, Hong KB, Huang ZT, Hsieh WH, Huang WH, Lu TC. Challenges and Advancement of Blue III-Nitride Vertical-Cavity Surface-Emitting Lasers. Micromachines. 12. PMID 34207796 DOI: 10.3390/mi12060676  0.424
2018 Huang C, Tai T, Lin J, Chang T, Liu C, Lu T, Wu Y, Kuo H. Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing Acs Photonics. 5: 2724-2729. DOI: 10.1021/Acsphotonics.8B00471  0.429
2017 Huang CY, Lin JJ, Chang TC, Liu CY, Tai TY, Hong KB, Lu TC, Kuo HC. Collective lasing behavior of monolithic GaN-InGaN core-shell nanorod lattice under room temperature. Nano Letters. PMID 28926272 DOI: 10.1021/Acs.Nanolett.7B02922  0.321
2017 Wu P, Chen C, Huang C, Kuo H, Lin K, Wu YS. Growth of GaN on {12(3)over-bar5}-like Facets of Patterned Sapphire Substrate Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0351705Jss  0.327
2017 Wu P, Li J, Hsu L, Huang C, Cheng Y, Kuo H, Wu YS. Effect of sputtered AlN location on the growth mechanism of GaN Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0211709Jss  0.306
2017 Liu C, Chen T, Huang J, Lin T, Huang C, Li X, Kuo H, Shen J, Chang C. Enhanced Color-Conversion Efficiency of Hybrid Nanostructured-Cavities InGaN/GaN Light-Emitting Diodes Consisting of Nontoxic InP Quantum Dots Ieee Journal of Selected Topics in Quantum Electronics. 23: 8027032. DOI: 10.1109/Jstqe.2017.2749973  0.392
2016 Liu CY, Huang CY, Wu PY, Huang JK, Kao TS, Zhou AJ, Lin DW, Wu YCS, Chang CY, Kuo HC. High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al2O3 passivation Ieee Electron Device Letters. 37: 452-455. DOI: 10.1109/Led.2016.2532352  0.421
2015 Chi YC, Hsieh DH, Lin CY, Chen HY, Huang CY, He JH, Ooi B, DenBaars SP, Nakamura S, Kuo HC, Lin GR. Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication. Scientific Reports. 5: 18690. PMID 26687289 DOI: 10.1038/Srep18690  0.371
2014 Hardy MT, Wu F, Huang CY, Zhao Y, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes Ieee Photonics Technology Letters. 26: 43-46. DOI: 10.1109/Lpt.2013.2288927  0.714
2011 Huang CY, Hardy MT, Fujito K, Feezell DF, Speck JS, Denbaars SP, Nakamura S. Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20 21 ̄) InGaN/GaN quantum wells Applied Physics Letters. 99. DOI: 10.1063/1.3666791  0.597
2010 Huang CY, Tyagi A, Lin YD, Hardy MT, Hsu PS, Fujito K, Ha JS, Ohta H, Speck JS, DenBaars SP, Nakamura S. Propagation of spontaneous emission in birefringent m-axis oriented semipolar (1122) (Al,In,Ga)N waveguide structures Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.010207  0.706
2010 Lin Y, Yamamoto S, Huang C, Hsiung C, Wu F, Fujito K, Ohta H, Speck JS, DenBaars SP, Nakamura S. High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes Applied Physics Express. 3: 82001. DOI: 10.1143/Apex.3.082001  0.697
2010 Tyagi A, Farrell MR, Kelchner KM, Huang CY, Hsu PS, Haeger DA, Hardy MT, Holder C, Fujito K, Cohen DA, Ohta H, Speck JS, DenBaars SP, Nakamura S. AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4nm Applied Physics Express. 3. DOI: 10.1143/Apex.3.011002  0.621
2010 Huang C, Lin Y, Tyagi A, Chakraborty A, Ohta H, Speck JS, DenBaars SP, Nakamura S. Optical waveguide simulations for the optimization of InGaN-based green laser diodes Journal of Applied Physics. 107: 23101. DOI: 10.1063/1.3275325  0.729
2009 Lin YD, Hardy MT, Hsu PS, Kelchner KM, Huang CY, Haeger DA, Farrell RM, Fujito K, Chakraborty A, Ohta H, Speck JS, DenBaars SP, Nakamura S. Blue - Green ingan/gan laser diodes on miscut m - Plane gan substrate Applied Physics Express. 2. DOI: 10.1143/Apex.2.082102  0.732
2009 Lin YD, Huang CY, Hardy MT, Hsu PS, Fujito K, Chakraborty A, Ohta H, Speck JS, Denbaars SP, Nakamura S. M -plane pure blue laser diodes with p-GaN/n-AlGaN -based asymmetric cladding and InGaN-based wave-guiding layers Applied Physics Letters. 95. DOI: 10.1063/1.3212146  0.754
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