Year |
Citation |
Score |
2014 |
Holder CO, Leonard JT, Farrell RM, Cohen DA, Yonkee B, Speck JS, DenBaars SP, Nakamura S, Feezell DF. Erratum: “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching” [Appl. Phys. Lett. 105, 031111 (2014)] Applied Physics Letters. 105: 89902. DOI: 10.1063/1.4894638 |
0.616 |
|
2014 |
Holder CO, Leonard JT, Farrell RM, Cohen DA, Yonkee B, Speck JS, Denbaars SP, Nakamura S, Feezell DF. Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching Applied Physics Letters. 105. DOI: 10.1063/1.4890864 |
0.641 |
|
2013 |
Holder C, Feezell D, Speck JS, DenBaars SP, Nakamura S. Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers Proceedings of Spie - the International Society For Optical Engineering. 8639. DOI: 10.1117/12.2008277 |
0.665 |
|
2013 |
Hardy MT, Holder CO, Feezell DF, Nakamura S, Speck JS, Cohen DA, Denbaars SP. Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes Applied Physics Letters. 103. DOI: 10.1063/1.4819171 |
0.678 |
|
2013 |
Hardy MT, Holder CO, Nakamura S, Speck JS, Cohen DA, Denbaars SP. Demonstration of true green ITO clad semipolar InGaN/GaN laser diodes 2013 Conference On Lasers and Electro-Optics, Cleo 2013. |
0.632 |
|
2013 |
Hardy MT, Holder CO, Nakamura S, Speck JS, Cohen DA, DenBaars SP. Demonstration of true green ITO clad semipolar(2021) InGaN/GaN laser diodes Cleo: Science and Innovations, Cleo_si 2013. CF1F.1. |
0.619 |
|
2010 |
Tyagi A, Farrell MR, Kelchner KM, Huang CY, Hsu PS, Haeger DA, Hardy MT, Holder C, Fujito K, Cohen DA, Ohta H, Speck JS, DenBaars SP, Nakamura S. AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4nm Applied Physics Express. 3. DOI: 10.1143/Apex.3.011002 |
0.346 |
|
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