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Richard D. Heller, Ph.D. - Publications

Affiliations: 
2003 University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics
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18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2007 Kim J, Kondratko PK, Chuang SL, Walter G, Holonyak N, Heller RD, Zhang XB, Dupuis RD. Experimental demonstration of the polarization-dependent photon-mediated carrier redistribution in tunneling injection InP quantum-dot lasers with external-grating feedback Applied Physics Letters. 90. DOI: 10.1063/1.2741118  0.567
2006 Zhang XB, Heller RD, Ryou JH, Dupuis RD, Walter G, Holonyak N. Growth of InP self-assembled quantum dots on strained and strain-relaxed in x(Al 0.6Ga 0.4) 1-xP matrices by metal-organic chemical vapor deposition Journal of Applied Physics. 100. DOI: 10.1063/1.2244519  0.487
2006 Chuang SL, Kim J, Kondratko PK, Walter G, Holonyak N, Heller RD, Zhang XB, Dupuis RD. Tunneling injection quantum-dot lasers Materials Research Society Symposium Proceedings. 891: 51-58.  0.579
2005 Kondratko PK, Chuang SL, Walter G, Holonyak N, Heller RD, Zhang X, Dupuis RD. Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser Ieee Photonics Technology Letters. 17: 938-940. DOI: 10.1109/Lpt.2005.844328  0.578
2005 Kim J, Kondratko PK, Chuang SL, Walter G, Holonyak N, Heller RD, Zhang XB, Dupuis RD. Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing Ieee Journal of Quantum Electronics. 41: 1369-1379. DOI: 10.1109/Jqe.2005.857067  0.57
2004 Walter G, Elkow J, Holonyak N, Heller RD, Zhang XB, Dupuis RD. Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In 0.46Ga 0.54P quantum wells Applied Physics Letters. 84: 666-668. DOI: 10.1063/1.1645674  0.508
2004 Chuang SL, Kondratko PK, Kim J, Walter G, Elkow J, Holonyak N, Heller RD, Zhang XB, Dupuis RD. Tunneling injection quantum-dot laser: Theory and experiment Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 621-622.  0.481
2003 Zhang XB, Heller RD, Noh MS, Dupuis RD, Walter G, Holonyak N. Effect of the InAIGaP matrix on the growth of self-assembled InP quantum dots by metalorganic chemical vapor deposition Applied Physics Letters. 83: 1349-1351. DOI: 10.1063/1.1600825  0.388
2003 Zhang XB, Heller RD, Noh MS, Dupuis RD, Walter G, Holonyak N. Growth of InP quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition Applied Physics Letters. 83: 476-478. DOI: 10.1063/1.1595152  0.393
2003 Zhang XB, Heller RD, Noh MS, Dupuis RD, Walter G, Holonyak N. Effect of Si delta doping on the luminescence properties of InP/InAIP quantum dots Applied Physics Letters. 82: 4343-4345. DOI: 10.1063/1.1582364  0.369
2003 Heller RD, Walter G, Holonyak N, Mathes DT, Hull R, Dupuis RD. Low-threshold room-temperature continuous-wave InP quantum dot coupled to InGaP quantum well heterostructure lasers grown by metalorganic chemical vapor deposition Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 89-91.  0.443
2003 Zhang XB, Heller RD, Noh MS, Dupuis RD, Walter G, Holonyak N. Optimizing the growth of vertically stacked InP/In0.5Al0.3Ga0.2P quantum dots by metalorganic chemical vapor deposition Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 92-95.  0.336
2003 Zhang XB, Heller RD, Noh MS, Dupuis RD, Walter G, Holonyak N. Improved area density and luminescence properties of InP quantum dots grown on In0.5Al0.5P by metal-organic chemical vapor deposition Journal of Electronic Materials. 32: 1335-1338.  0.352
2002 Dupuis RD, Ryou JH, Heller RD, Walter G, Kellogg DA, Holonyak N, Reddy CV, Narayanamurti V, Mathes DT, Hull R. InP self assembled quantum dot lasers grown on GaAs substrates by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 707: 149-154. DOI: 10.1557/Proc-707-H11.6.1  0.537
2002 Kou L, Hall DC, Strohhöfer C, Polman A, Zhang T, Kolbas RM, Heller RD, Dupuis RD. Er-doped AlGaAs native oxides: Photoluminescence characterization and process optimization Ieee Journal On Selected Topics in Quantum Electronics. 8: 880-890. DOI: 10.1109/Jstqe.2002.801689  0.362
2002 Walter G, Holonyak N, Heller RD, Dupuis RD. Visible spectrum (654 nm) room temperature continuous wave InP quantum dot coupled to InGaP quantum well InP-InGaP-In(AlGa)P-InAIP heterostructure laser Applied Physics Letters. 81: 4604-4606. DOI: 10.1063/1.1526454  0.425
2002 Dupuis RD, Ryou JH, Heller RD, Walter G, Kellogg DA, Holonyak N, Reddy CV, Narayanamurti V, Mathes DT, Hull R. InP self assembled quantum dot lasers grown on GaAs substrates by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 707: 149-154.  0.383
2002 Dupuis RD, Heller RD, Ryou JH, Walter G, Holonyak N, Reddy C, Narayanamurti V, Mathes D, Hull R. Low-threshold lasers based upon InP self-assembled quantum dots embedded in InAlGaP grown by metalorganic chemical vapor deposition Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 721.  0.385
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