| Year |
Citation |
Score |
| 2019 |
Scarel G, Stevens EC. The Effect of Infrared Light’s Power on the Infrared Spectra of Thin Films World Journal of Condensed Matter Physics. 9: 1-21. DOI: 10.4236/Wjcmp.2019.91001 |
0.397 |
|
| 2017 |
Given RP, Wenger KS, Wheeler VD, Utter BC, Scarel G. Fabrication of nanopower generators using thin atomic layer deposited films Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 35: 01B120. DOI: 10.1116/1.4971403 |
0.479 |
|
| 2015 |
Mann HS, Lang BN, Schwab Y, Niemelä JP, Karppinen M, Scarel G. Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO2 films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4901457 |
0.506 |
|
| 2014 |
Schwab Y, Mann HS, Lang BN, Scarel G. Polariton Evaporation: The Blackbody Radiation Nature of the Low-Frequency Radiation Emitted by Radiative Polaritons to the Surrounding Space World Journal of Condensed Matter Physics. 4: 58-65. DOI: 10.4236/Wjcmp.2014.42009 |
0.3 |
|
| 2013 |
Vincent-Johnson AJ, Schwab Y, Mann HS, Francoeur M, Hammonds JS, Scarel G. Origin of the low frequency radiation emitted by radiative polaritons excited by infrared radiation in planar La2O3 films. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 25: 035901. PMID 23221332 DOI: 10.1088/0953-8984/25/3/035901 |
0.397 |
|
| 2013 |
Vincent-Johnson AJ, Masters AE, Hu X, Scarel G. Excitation of radiative polaritons by polarized broadband infrared radiation in thin oxide films deposited by atomic layer deposition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 31: 01A111. DOI: 10.1116/1.4759442 |
0.405 |
|
| 2013 |
Petrochenko PE, Scarel G, Hyde GK, Parsons GN, Skoog SA, Zhang Q, Goering PL, Narayan RJ. Prevention of ultraviolet (UV)-induced surface damage and cytotoxicity of polyethersulfone using atomic layer deposition (ALD) titanium dioxide Jom. 65: 550-556. DOI: 10.1007/S11837-013-0565-8 |
0.778 |
|
| 2012 |
Vincent-Johnson AJ, Vasquez KA, Scarel G, Hammonds JS, Francoeur M. Effects of metallic, semiconducting, and insulating substrates on the coupling involving radiative polaritons in thin oxide films. Applied Spectroscopy. 66: 188-97. PMID 22449283 DOI: 10.1366/11-06489 |
0.526 |
|
| 2012 |
Vasquez KA, Vincent-Johnson AJ, Hughes WC, Augustine BH, Lee K, Parsons GN, Scarel G. Wetting properties induced in nano-composite POSS-MA polymer films by atomic layer deposited oxides Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3639134 |
0.799 |
|
| 2011 |
Johnston-Peck AC, Scarel G, Wang J, Parsons GN, Tracy JB. Sinter-free phase conversion and scanning transmission electron microscopy of FePt nanoparticle monolayers Nanoscale. 3: 4142-4149. PMID 21869998 DOI: 10.1039/C1Nr10567A |
0.52 |
|
| 2011 |
Hyde GK, Stewart SM, Scarel G, Parsons GN, Shih CC, Shih CM, Lin SJ, Su YY, Monteiro-Riviere NA, Narayan RJ. Atomic layer deposition of titanium dioxide on cellulose acetate for enhanced hemostasis Biotechnology Journal. 6: 213-223. PMID 21298806 DOI: 10.1002/Biot.201000342 |
0.812 |
|
| 2011 |
Vincent-Johnson AJ, Vasquez KA, Bridstrup JE, Masters AE, Hu X, Scarel G. Heat recovery mechanism in the excitation of radiative polaritons by broadband infrared radiation in thin oxide films Applied Physics Letters. 99. DOI: 10.1063/1.3643464 |
0.307 |
|
| 2011 |
Johnston-Peck A, Scarel G, Wang J, Parsons G, Tracy J. Order-Disorder Phase Conversion of FePt Nanoparticles for Ultrahigh-Density Magnetic Recording Microscopy and Microanalysis. 17: 1830-1831. DOI: 10.1017/S1431927611010026 |
0.471 |
|
| 2010 |
Scarel G, Na JS, Parsons GN. Angular behavior of the Berreman effect investigated in uniform Al2O3 layers formed by atomic layer deposition. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 22: 155401. PMID 21389555 DOI: 10.1088/0953-8984/22/15/155401 |
0.759 |
|
| 2010 |
Scarel G, Na JS, Gong B, Parsons GN. Phonon response in the infrared region to thickness of oxide films formed by atomic layer deposition. Applied Spectroscopy. 64: 120-6. PMID 20132607 DOI: 10.1366/000370210790571954 |
0.758 |
|
| 2010 |
Hyde GK, Scarel G, Spagnola JC, Peng Q, Lee K, Gong B, Roberts KG, Roth KM, Hanson CA, Devine CK, Stewart SM, Hojo D, Na JS, Jur JS, Parsons GN. Atomic layer deposition and abrupt wetting transitions on nonwoven polypropylene and woven cotton fabrics. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 2550-8. PMID 19799446 DOI: 10.1021/La902830D |
0.686 |
|
| 2010 |
Scarel G, Na JS, Parsons GN. Angular behavior of the Berreman effect investigated in uniform Al 2O3 layers formed by atomic layer deposition Journal of Physics Condensed Matter. 22. DOI: 10.1088/0953-8984/22/15/155401 |
0.684 |
|
| 2010 |
Na JS, Scarel G, Parsons GN. In situ analysis of dopant incorporation, activation, and film growth during thin film ZnO ZnO:Al Atomic layer deposition Journal of Physical Chemistry C. 114: 383-388. DOI: 10.1021/Jp908332Q |
0.753 |
|
| 2010 |
Gittard SD, Hojo D, Hyde GK, Scarel G, Narayan RJ, Parsons GN. Antifungal textiles formed using silver deposition in supercritical carbon dioxide Journal of Materials Engineering and Performance. 19: 368-373. DOI: 10.1007/S11665-009-9514-7 |
0.741 |
|
| 2010 |
Scarel G, Na JS, Gong B, Parsons GN. Phonon response in the infrared region to thickness of oxide films formed by atomic layer deposition Applied Spectroscopy. 64: 120-126. |
0.746 |
|
| 2009 |
Na JS, Gong B, Scarel G, Parsons GN. Surface polarity shielding and hierarchical ZnO nano-architectures produced using sequential hydrothermal crystal synthesis and thin film atomic layer deposition Acs Nano. 3: 3191-3199. PMID 19785432 DOI: 10.1021/Nn900702E |
0.722 |
|
| 2009 |
Lamagna L, Scarel G, Fanciulli M, Pavia G. Investigation of interfacial layer development between thin Al2O3 films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100) Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 27: 443-448. DOI: 10.1116/1.3097849 |
0.528 |
|
| 2009 |
Li XL, Tsoutsou D, Scarel G, Wiemer C, Capelli SC, Volkos SN, Lamagna L, Fanciulli M. Chemical and structural properties of atomic layer deposited La2O3 films capped with a thin Al2O3 layer Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 27: L1-L7. DOI: 10.1116/1.3079632 |
0.542 |
|
| 2009 |
Na JS, Peng Q, Scarel G, Parsons GN. Role of gas doping sequence in surface reactions and dopant incorporation during atomic layer deposition of Al-Doped ZnO Chemistry of Materials. 21: 5585-5593. DOI: 10.1021/Cm901404P |
0.76 |
|
| 2009 |
Tsoutsou D, Scarel G, Debernardi A, Capelli S, Volkos S, Lamagna L, Schamm S, Coulon P, Fanciulli M. Erratum to “Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing” Microelectronic Engineering 85 (2008) 2411–2413 Microelectronic Engineering. 86: 2138. DOI: 10.1016/J.Mee.2008.12.062 |
0.31 |
|
| 2008 |
Lu HL, Scarel G, Wiemer C, Perego M, Spiga S, Fanciulli M, Pavia G. Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors Journal of the Electrochemical Society. 155: H807-H811. DOI: 10.1149/1.2965456 |
0.487 |
|
| 2008 |
Scarel G, Hyde GK, Hojo D, Parsons GN. Berreman effect in infrared absorption spectroscopy of ionic oxide coatings formed by atomic layer deposition on three-dimensional structures Journal of Applied Physics. 104. DOI: 10.1063/1.3013439 |
0.762 |
|
| 2008 |
Lu HL, Scarel G, Lamagna L, Fanciulli M, Ding S, Zhang DW. Effect of rapid thermal annealing on optical and interfacial properties of atomic-layer-deposited Lu2O3 films on Si (100) Applied Physics Letters. 93: 152906. DOI: 10.1063/1.3002373 |
0.512 |
|
| 2008 |
Lu HL, Scarel G, Alia M, Fanciulli M, Ding S, Zhang DW. Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition Applied Physics Letters. 92: 222907. DOI: 10.1063/1.2938697 |
0.521 |
|
| 2008 |
Perego M, Seguini G, Scarel G, Fanciulli M, Wallrapp F. Energy band alignment at TiO2∕Si interface with various interlayers Journal of Applied Physics. 103: 043509. DOI: 10.1063/1.2885109 |
0.397 |
|
| 2008 |
Tsoutsou D, Scarel G, Debernardi A, Capelli S, Volkos S, Lamagna L, Schamm S, Coulon P, Fanciulli M. Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing Microelectronic Engineering. 85: 2411-2413. DOI: 10.1016/J.Mee.2008.09.033 |
0.38 |
|
| 2008 |
Lu H, Scarel G, Li X, Fanciulli M. Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors Journal of Crystal Growth. 310: 5464-5468. DOI: 10.1016/J.JCRYSGRO.2008.08.031 |
0.437 |
|
| 2007 |
Mantovan R, Georgieva M, Perego M, Lu H, Cocco S, Zenkevich A, Scarel G, Fanciulli M. Atomic Layer Deposition of Magnetic Thin Films Acta Physica Polonica A. 112: 1271-1280. DOI: 10.12693/Aphyspola.112.1271 |
0.523 |
|
| 2007 |
Baldovino S, Spiga S, Scarel G, Fanciulli M. Effects of the oxygen precursor on the interface between (100)Si and HfO2 films grown by atomic layer deposition Applied Physics Letters. 91. DOI: 10.1063/1.2802040 |
0.452 |
|
| 2007 |
Scarel G, Debernardi A, Tsoutsou D, Spiga S, Capelli SC, Lamagna L, Volkos SN, Alia M, Fanciulli M. Vibrational and electrical properties of hexagonal La2 O3 films Applied Physics Letters. 91. DOI: 10.1063/1.2779108 |
0.52 |
|
| 2007 |
Perego M, Scarel G, Fanciulli M, Fedushkin IL, Skatova AA. Fabrication of GeO2 layers using a divalent Ge precursor Applied Physics Letters. 90: 162115. DOI: 10.1063/1.2723684 |
0.488 |
|
| 2007 |
Malvestuto M, Pedio M, Nannarone S, Pavia G, Scarel G, Fanciulli M, Boscherini F. A study of the growth of Lu2O3 on Si(001) by synchrotron radiation photoemission and transmission electron microscopy Journal of Applied Physics. 101: 074104. DOI: 10.1063/1.2717128 |
0.395 |
|
| 2007 |
Zenkevich A, Lebedinskii Y, Scarel G, Fanciulli M, Baturin A, Lubovin N. Degradation kinetics of ultrathin HfO2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM Microelectronics Reliability. 47: 657-659. DOI: 10.1016/J.Microrel.2007.01.071 |
0.401 |
|
| 2007 |
Zenkevich A, Lebedinskii Y, Spiga S, Wiemer C, Scarel G, Fanciulli M. Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si Microelectronic Engineering. 84: 2263-2266. DOI: 10.1016/J.Mee.2007.04.126 |
0.443 |
|
| 2007 |
Scarel G, Wiemer C, Fanciulli M, Fedushkin IL, Fukin GK, Domrachev GA, Lebedinskii Y, Zenkevich A, Pavia G. [(Me3Si)2N]3Lu: Molecular Structure and Use as Lu and Si Source for Atomic Layer Deposition of Lu Silicate Films Zeitschrift FüR Anorganische Und Allgemeine Chemie. 633: 2097-2103. DOI: 10.1002/ZAAC.200700223 |
0.379 |
|
| 2006 |
Scarel G, Wiemer C, Tallarida G, Spiga S, Seguini G, Bonera E, Fanciulli M, Lebedinskii Y, Zenkevich A, Pavia G, Fedushkin IL, Fukin GK, Domrachev GA. Atomic layer deposition of Lu silicate films using [(Me3Si) 2N]3 Lu Journal of the Electrochemical Society. 153: F271-F276. DOI: 10.1149/1.2347109 |
0.511 |
|
| 2006 |
Dallera C, Fracassi F, Braicovich L, Scarel G, Wiemer C, Fanciulli M, Pavia G, Cowie BCC. Nondestructive diagnostics of high-κ dielectrics for advanced electronic devices Applied Physics Letters. 89: 183521. DOI: 10.1063/1.2374843 |
0.43 |
|
| 2006 |
Elliott SD, Scarel G, Wiemer C, Fanciulli M, Pavia G. Ozone-based atomic layer deposition of alumina from TMA: Growth, morphology, and reaction mechanism Chemistry of Materials. 18: 3764-3773. DOI: 10.1021/Cm0608903 |
0.451 |
|
| 2006 |
Malvestuto M, Scarel G, Wiemer C, Fanciulli M, D’Acapito F, Boscherini F. X-ray absorption spectroscopy study of Yb2O3 and Lu2O3 thin films deposited on Si(100) by atomic layer deposition Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 246: 90-95. DOI: 10.1016/J.Nimb.2005.12.020 |
0.499 |
|
| 2006 |
Perego M, Seguini G, Scarel G, Fanciulli M. X-ray photoelectron spectroscopy study of energy-band alignments of Lu2O3 on Ge Surface and Interface Analysis. 38: 494-497. DOI: 10.1002/Sia.2268 |
0.408 |
|
| 2005 |
Bonera E, Scarel G, Fanciulli M, Delugas P, Fiorentini V. Dielectric properties of high-kappa oxides: theory and experiment for Lu2O3. Physical Review Letters. 94: 027602. PMID 15698229 DOI: 10.1103/Physrevlett.94.027602 |
0.441 |
|
| 2005 |
Spiga S, Wiemer C, Tallarida G, Scarel G, Ferrari S, Seguini G, Fanciulli M. Effects of the oxygen precursor on the electrical and structural properties of HfO 2 films grown by atomic layer deposition on Ge Applied Physics Letters. 87. DOI: 10.1063/1.2042631 |
0.514 |
|
| 2004 |
Schumanna H, Fedushkin IL, Hummert M, Scarel G, Bonera E, Fanciulli M. Crystal and Molecular Structure of [(η5-C5H4SiMe3)2LuCl]2: A Precursor for the Production of Lu2O3 Films Zeitschrift FüR Naturforschung. B, a Journal of Chemical Sciences. 59: 1035-1038. DOI: 10.1515/Znb-2004-0914 |
0.302 |
|
| 2004 |
Scarel G, Bonera E, Wiemer C, Tallarida G, Spiga S, Fanciulli M, Fedushkin IL, Schumann H, Lebedinskii Y, Zenkevich A. Atomic-layer deposition of Lu2O3 Applied Physics Letters. 85: 630-632. DOI: 10.1063/1.1773360 |
0.539 |
|
| 2004 |
Ferrari S, Scarel G. Oxygen diffusion in atomic layer deposited ZrO2 and HfO 2 thin films on Si (100) Journal of Applied Physics. 96: 144-149. DOI: 10.1063/1.1753080 |
0.411 |
|
| 2004 |
Scarel G, Spiga S, Wiemer C, Tallarida G, Ferrari S, Fanciulli M. Trends of structural and electrical properties in atomic layer deposited HfO2 films Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 109: 11-16. DOI: 10.1016/J.Mseb.2003.10.021 |
0.52 |
|
| 2003 |
Fanciulli M, Spiga S, Scarel G, Tallarida G, Wiemer C, Seguini G. Structural and Electrical Properties of HfO2 Films Grown by Atomic Layer Deposition on Si, Ge, GaAs and GaN Mrs Proceedings. 786. DOI: 10.1557/Proc-786-E6.14 |
0.536 |
|
| 2003 |
Scarel G, Ferrari S, Spiga S, Wiemer C, Tallarida G, Fanciulli M. Effects of growth temperature on the properties of atomic layer deposition grown ZrO2 films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 1359-1365. DOI: 10.1116/1.1564032 |
0.538 |
|
| 2003 |
Baldovino S, Nokhrin S, Scarel G, Fanciulli M, Graf T, Brandt M. Investigation of point defects at the high-k oxides/Si(100) interface by electrically detected magnetic resonance Journal of Non-Crystalline Solids. 322: 168-173. DOI: 10.1016/S0022-3093(03)00277-1 |
0.326 |
|
| 2003 |
Bonera E, Scarel G, Fanciulli M. Structure evolution of atomic layer deposition grown ZrO2 films by deep-ultra-violet Raman and far-infrared spectroscopies Journal of Non-Crystalline Solids. 322: 105-110. DOI: 10.1016/S0022-3093(03)00188-1 |
0.55 |
|
| 2003 |
Scarel G, Aita CR, Sklyarov AV. Effect of substrate conductivity on infrared reflection spectra of thin TiO2 films Journal of Non-Crystalline Solids. 318: 168-174. DOI: 10.1016/S0022-3093(02)01875-6 |
0.64 |
|
| 2002 |
Ferrari S, Scarel G, Wiemer C, Fanciulli M. Chlorine mobility during annealing in N2 in ZrO2 and HfO2 films grown by atomic layer deposition Journal of Applied Physics. 92: 7675-7677. DOI: 10.1063/1.1521802 |
0.512 |
|
| 2002 |
Scarel G, Hirschmugl CJ, Yakovlev VV, Sorbello RS, Aita CR, Tanaka H, Hisano K. Infrared response of vitreous titanium dioxide films with anatase short-range order Journal of Applied Physics. 91: 1118-1128. DOI: 10.1063/1.1427430 |
0.642 |
|
| 2002 |
Scarel G, Aita CR, Tanaka H, Hisano K. Far-infrared spectra of amorphous titanium dioxide films Journal of Non-Crystalline Solids. 303: 50-53. DOI: 10.1016/S0022-3093(02)00963-8 |
0.625 |
|
| 2000 |
Yakovlev VV, Scarel G, Aita CR, Mochizuki S. Short-range order in ultrathin film titanium dioxide studied by Raman spectroscopy Applied Physics Letters. 76: 1107-1109. DOI: 10.1063/1.125953 |
0.677 |
|
| 1999 |
DeLoach JD, Scarel G, Aita CR. Correlation between titania film structure and near ultraviolet optical absorption Journal of Applied Physics. 85: 2377-2384. DOI: 10.1063/1.369553 |
0.674 |
|
| Low-probability matches (unlikely to be authored by this person) |
| 2006 |
Compagnoni CM, Spinelli AS, Bianchini A, Lacaita AL, Spiga S, Scarel G, Wiemer C, Fanciulli M. Temperature dependence of transient and steady-state gate currents in HfO2 capacitors Applied Physics Letters. 89. DOI: 10.1063/1.2345237 |
0.281 |
|
| 1995 |
Kovač J, Scarel G, Sakho O, Sancrotti M. An experimental study of the electronic structure of C60 films grown at the Ag(110) surface Journal of Electron Spectroscopy and Related Phenomena. 72: 71-75. DOI: 10.1016/0368-2048(94)02336-0 |
0.277 |
|
| 2009 |
Schamm S, Coulon PE, Miao S, Volkos SN, Lu LH, Lamagna L, Wiemer C, Tsoutsou D, Scarel G, Fanciulli M. Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La[sub 2]O[sub 3]∕Si Interfaces for Advanced Gate Stacks Journal of the Electrochemical Society. 156: H1. DOI: 10.1149/1.3000594 |
0.275 |
|
| 2004 |
Seguini G, Bonera E, Spiga S, Scarel G, Fanciulli M. Energy-band diagram of metal/Lu2O 3silicon structures Applied Physics Letters. 85: 5316-5318. DOI: 10.1063/1.1828600 |
0.271 |
|
| 1999 |
Kovac J, Scarel G, Sancrotti M, Beghi MG, Bottani CE, Ossi PM, Calliari L, Bonelli M, Miotello A. Time-dependent evolution of thin TiN films prepared by ion beam assisted deposition Journal of Applied Physics. 86: 5566-5572. DOI: 10.1063/1.371561 |
0.269 |
|
| 2018 |
Gordon AL, Scarel G. Interaction in the Steady State between Electromagnetic Waves and Matter World Journal of Condensed Matter Physics. 8: 171-184. DOI: 10.4236/Wjcmp.2018.84012 |
0.258 |
|
| 2014 |
Schwab Y, Mann HS, Lang BN, Lancaster JL, Parise RJ, Vincent-Johnson AJ, Scarel G. Infrared power generation in an insulated compartment Complexity. 19: 44-55. DOI: 10.1002/Cplx.21484 |
0.247 |
|
| 2016 |
John TCS, Marinelli ZJ, Kaczmar JM, Given RP, Wenger KS, Utter BC, Scarel G. Conversion of infrared light into usable energy Proceedings of Spie. 9927: 8. DOI: 10.1117/12.2236971 |
0.246 |
|
| 2015 |
Gordon AL, Schwab Y, Lang BN, Gearhart GP, Jobin TR, Kaczmar JM, Marinelli ZJ, Mann HS, Utter BC, Scarel G. Decoupling the Electrical and Entropic Contributions to Energy Transfer from Infrared Radiation to a Power Generator World Journal of Condensed Matter Physics. 5: 301-318. DOI: 10.4236/Wjcmp.2015.54031 |
0.243 |
|
| 2019 |
Scarel G. The Role of Pτ in the Photothermoelectric Effect and in Photoredox Catalysis Reactions World Journal of Condensed Matter Physics. 9: 91-101. DOI: 10.4236/Wjcmp.2019.94007 |
0.237 |
|
| 2014 |
Mann HS, Schwab Y, Lang BN, Lancaster JL, Parise RJ, Scarel G. Effective Thermoelectric Power Generation in an Insulated Compartment World Journal of Condensed Matter Physics. 4: 153-165. DOI: 10.4236/Wjcmp.2014.43020 |
0.235 |
|
| 2018 |
Boone DE, Jackson CH, Swecker AT, Hergenrather JS, Wenger KS, Kokhan O, Terzić B, Melnikov I, Ivanov IN, Stevens EC, Scarel G. Probing the Wave Nature of Light-Matter Interaction World Journal of Condensed Matter Physics. 8: 62-89. DOI: 10.4236/Wjcmp.2018.82005 |
0.228 |
|
| 2007 |
Scarel G, Debernardi A, Tsoutsou D, Spiga S, Capelli SC, Lamagna L, Volkos SN, Alia M, Fanciulli M. Erratum: “Vibrational and electrical properties of hexagonal La2O3 films” [Appl. Phys. Lett. 91, 102901 (2007)] Applied Physics Letters. 91: 189901. DOI: 10.1063/1.2811709 |
0.227 |
|
| 2020 |
Pickens KT, Scarel G. Estimation of the Power of the Anomalous Microwave Emission World Journal of Condensed Matter Physics. 10: 105-117. DOI: 10.4236/Wjcmp.2020.103007 |
0.227 |
|
| 2006 |
Zenkevich AV, Lebedinskii YY, Barantsev NS, Nevolin VN, Kulikauskas VS, Scarel G, Fanciulli M. Degradation pattern of thin HfO2 films on Si(100) under ultrahigh-vacuum annealing: An investigation by x-ray photoelectron spectroscopy and low-energy ion scattering Russian Microelectronics. 35: 210-215. DOI: 10.1134/S1063739706040020 |
0.227 |
|
| 2019 |
Scarel G. Quantum and Non-Quantum Formulation of Eye’s Adaptation to Light’s Intensity Increments World Journal of Condensed Matter Physics. 9: 62-74. DOI: 10.4236/Wjcmp.2019.93005 |
0.22 |
|
| 2004 |
Ferrari S, Modreanu M, Scarel G, Fanciulli M. X-Ray reflectivity and spectroscopic ellipsometry as metrology tools for the characterization of interfacial layers in high-κ materials Thin Solid Films. 450: 124-127. DOI: 10.1016/J.TSF.2003.10.051 |
0.183 |
|
| 2019 |
Schamm S, Coulon P, Miao S, Volkos SN, Lu LH, Lamagna L, Wiemer C, Tsoutsou D, Scarel G, Fanciulli M. ALD-Grown Rare Earth Oxides for Advanced Gate Stacks Ecs Transactions. 13: 77-88. DOI: 10.1149/1.2911487 |
0.167 |
|
| 1997 |
Santoni A, Cowie B, Scarel G, Dhanak V. The structure of (√3 × √3)R30°-sulphur on Rh(111) surface studied by X-ray standing wavefield absorption and surface EXAFS Surface Science. 388: 254-261. DOI: 10.1016/S0039-6028(97)00420-2 |
0.147 |
|
| 1996 |
Dhanak V, Harte S, Scarel G, Cowie B, Santoni A. Structure determination of Rh(100)-c(2 × 2)-S using the surface extended X-ray absorption fine structure technique Surface Science. 366: L765-L768. DOI: 10.1016/0039-6028(96)00939-9 |
0.119 |
|
| 1998 |
Lazzarino M, Scarel G, Rubini S, Bratina G, Sorba L, Franciosi A, Berthod C, Binggeli N, Baldereschi A. Al/ZnSe(100) Schottky-barrier height versus initial ZnSe surface reconstruction Physical Review B. 57: R9431-R9434. DOI: 10.1103/PhysRevB.57.R9431 |
0.116 |
|
| 1998 |
Laidani N, Dorigoni C, Miotello A, Calliari L, Scarel G, Sancrotti M. Depth-profiling via X-Ray photoemission and Auger spectroscopies of N+ implanted tungsten carbides grown on the Ti–6Al–4V alloy Thin Solid Films. 317: 477-480. DOI: 10.1016/S0040-6090(97)00567-1 |
0.091 |
|
| 1996 |
Mercer J, Scarel G, Santoni A, Cowie B, Lewis D, Robinson A, McGrath R, Dhanak V. Structural study of Rh(100)-c(2 × 2)-S using the normal-incidence standing X-ray wavefield method Surface Science. 369: 36-44. DOI: 10.1016/S0039-6028(96)00899-0 |
0.057 |
|
| 2007 |
Brusa R, Macchi C, Mariazzi S, Karwasz G, Scarel G, Fanciulli M. Innovative dielectrics for semiconductor technology Radiation Physics and Chemistry. 76: 189-194. DOI: 10.1016/J.RADPHYSCHEM.2006.03.033 |
0.046 |
|
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