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David E. Kotecki - Publications

Affiliations: 
The University of Maine, Orono, ME, United States 
Area:
Electronics and Electrical Engineering
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31 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2001 Saenger KL, Costrini G, Kotecki DE, Kwietniak KT, Andricacos PC. Submicrometer Platinum Electrodes by Through-Mask Plating Journal of the Electrochemical Society. 148. DOI: 10.1149/1.1410971  0.318
2000 Cabral C, Saenger KL, Kotecki DE, Harper JME. Optimization of Ta–Si–N thin films for use as oxidation-resistant diffusion barriers Journal of Materials Research. 15: 194-198. DOI: 10.1557/Jmr.2000.0031  0.32
1999 Kotecki DE, Baniecki JD, Shen H, Laibowitz RB, Saenger KL, Lian JJ, Shaw TM, Athavale SD, Cabral C, Duncombe PR, Gutsche M, Kunkel G, Park Y-, Wang Y-, Wise R. (Ba,Sr)TiO 3 dielectrics for future stacked- capacitor DRAM Ibm Journal of Research and Development. 43: 367-382. DOI: 10.1147/Rd.433.0367  0.423
1999 Baniecki JD, Laibowitz RB, Shaw TM, Saenger KL, Duncombe PR, Cabral C, Kotecki DE, Shen H, Lian J, Ma QY. Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0·7Sr0·3TiO3 thin film capacitors Journal of the European Ceramic Society. 19: 1457-1461. DOI: 10.1016/S0955-2219(98)00449-X  0.397
1998 Baniecki JD, Laibowitz RB, Shaw TM, Duncombe PR, Kotecki DE, Shen H, Lian J, Mat QY. Nonlinear Dielectric Relaxation of Mn Doped Polycrystalline (Ba,Sr)TiO 3 Thin Films Over the Temperature Range of 4.2 - 473 K Mrs Proceedings. 541: 23. DOI: 10.1557/Proc-541-23  0.346
1998 Saenger KL, Grill A, Kotecki DE. Buried, self-aligned barrier layer structures for perovskite-based memory devices comprising Pt or Ir bottom electrodes on silicon-contributing substrates Journal of Applied Physics. 83: 802-813. DOI: 10.1063/1.366761  0.449
1998 Copel M, Baniecki JD, Duncombe PR, Kotecki D, Laibowitz R, Neumayer DA, Shaw TM. Compensation doping of Ba0.7Sr0.3TiO3 thin films Applied Physics Letters. 73: 1832-1834. DOI: 10.1063/1.122297  0.382
1998 Baniecki JD, Laibowitz RB, Shaw TM, Duncombe PR, Neumayer DA, Kotecki DE, Shen H, Ma QY. Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz Applied Physics Letters. 72: 498-500. DOI: 10.1063/1.120796  0.382
1997 Shen H, Kotecki DE, Murphy RJ, Zaitz M, Laibowitz RB, Shaw TM, Saenger KL, Baniecki J, Beitel G, Klueppel V, Cerva H. Microstructure Control of (Ba, Sr)TiO 3 Films for Gigabit Dram Mrs Proceedings. 493: 33. DOI: 10.1557/Proc-493-33  0.431
1997 Baniecki JD, Laibowitz RB, Shaw TM, Duncombe PR, Neumayer DA, Cope M, Kotecki DE, Shen H, Ma QY. Electrical and Microwave Properties of Mn Implanted (Ba,Sr)TiO 3 Thin Films Mrs Proceedings. 493: 27. DOI: 10.1557/Proc-493-27  0.342
1997 Hamaguchi S, Mayo AA, Rossnagel SM, Kotecki DE, Milkove KR, Wang C, Farrell CE. Numerical Simulation of Etching and Deposition Processes Japanese Journal of Applied Physics. 36: 4762-4768. DOI: 10.1143/Jjap.36.4762  0.35
1997 Farrell CE, Milkove KR, Wang C, Kotecki DE. A reactive ion etch study for producing patterned platinum structures Integrated Ferroelectrics. 16: 109-138. DOI: 10.1080/10584589708013034  0.411
1997 Kotecki DE. A review of high dielectric materials for DRAM capacitors Integrated Ferroelectrics. 16: 1-19. DOI: 10.1080/10584589708013025  0.308
1996 Economikos L, Kotecki DE, Surprenant R. Controlling the Dimensions of Laser Chemical Vapor Deposited Metallurgy Journal of Electronic Packaging. 118: 7-10. DOI: 10.1115/1.2792126  0.351
1996 Nguyen T, Ho HL, Kotecki DE, Nguyen TD. Reaction mechanism of cobalt with silicon dioxide Journal of Applied Physics. 79: 1123-1128. DOI: 10.1063/1.362667  0.412
1995 Colgan EG, Cabral C, Kotecki DE. Activation energy for CoSi and CoSi2 formation measured during rapid thermal annealing Journal of Applied Physics. 77: 614-619. DOI: 10.1063/1.359046  0.334
1995 Kotecki DE, Chapple‐Sokol JD. Hydrogen incorporation in silicon nitride films deposited by remote electron‐cyclotron‐resonance chemical vapor deposition Journal of Applied Physics. 77: 1284-1293. DOI: 10.1063/1.358930  0.449
1994 Ransom CM, Jackson TN, DeGelormo JF, Zeller C, Kotecki DE, Graimann C, Sadana DK, Benedict J. Shallow n+ Junctions in Silicon by Arsenic Gas‐Phase Doping Journal of the Electrochemical Society. 141: 1378-1381. DOI: 10.1149/1.2054928  0.313
1994 Ransom CM, Jackson TN, DeGelormo JF, Kotecki D, Graimann C, Sadana DK. Arsenic gas‐phase doping of polysilicon Journal of Vacuum Science & Technology B. 12: 1390-1393. DOI: 10.1116/1.587304  0.319
1994 Kotecki DE, Conti RA, Barbee SG, Cacouris TD, Chapple‐Sokol JD, Eschbach RJ, Wilson DL, Wong J, Zuhoski SP. Applications of computational fluid dynamics for improved performance in chemical‐vapor‐deposition reactors Journal of Vacuum Science & Technology B. 12: 2752-2757. DOI: 10.1116/1.587187  0.391
1993 Nguyen T, Ho HL, Kotecki DE, Nguyen TD. Reaction study of cobalt and silicon nitride Journal of Materials Research. 8: 2354-2361. DOI: 10.1557/Jmr.1993.2354  0.339
1992 Kotecki DE, Colgan EG, Rose A. Reactor Issues Important for the Deposition of Selective Tungsten by Chemical Vapor Deposition Using the SiH4 Reduction of WF6 Mrs Proceedings. 282. DOI: 10.1557/Proc-282-371  0.381
1992 Jeng SJ, Kotecki DE, Kanicki J, Parks CC, Tien J. Structure, Characteristics, and the Application of Phosphorus Doped Hydrogenated Microcrystalline Silicon Mrs Proceedings. 242. DOI: 10.1557/Proc-242-693  0.453
1992 Kotecki DE, Conti RA. Temperature distribution in an ideal azimuthally symmetric chemical‐vapor‐deposition reactor Journal of Vacuum Science and Technology. 10: 3136-3142. DOI: 10.1116/1.577877  0.312
1992 Kotecki DE, Barbee SG. Temperature optimization in an azimuthally symmetric single‐wafer chemical vapor deposition reactor: The low pressure regime Journal of Vacuum Science and Technology. 10: 843-849. DOI: 10.1116/1.577682  0.331
1991 Jeng SJ, Kotecki DE, Kanicki J, Parks CC, Tien J. Structure, properties, and thermal stability ofinsituphosphorus‐doped hydrogenated microcrystalline silicon prepared by plasma‐enhanced chemical vapor deposition Applied Physics Letters. 58: 1632-1634. DOI: 10.1063/1.105148  0.406
1989 Kotecki DE, Jeng SJ, Kanicki J, Parks CC, Rausch W, Seshan K, Tien J. Correlations Between Optical, Electrical, and Structural Properties of In-Situ Phosphorus-Doped Hydrogenated Microcrystalline Silicon - Effects of Rapid Thermal Annealing on Material Properties Mrs Proceedings. 164. DOI: 10.1557/Proc-164-353  0.48
1988 Kotecki DE, Herman IP. A real time Monte Carlo simulation of thin film nucleation in localized-laser chemical vapor deposition Journal of Applied Physics. 64: 4920-4942. DOI: 10.1063/1.342442  0.608
1987 Kotecki DE, Herman IP. Initial Stages of Silicon Growth on the (100) Surface of Silicon By Localized Laser Cvd Mrs Proceedings. 101. DOI: 10.1557/Proc-101-119  0.594
1986 Kotecki DE, Herman IP. Nucleation and Growth of Silicon Microstructures by Direct-Laser Writing Mrs Proceedings. 75. DOI: 10.1557/Proc-75-65  0.622
1986 Herman IP, Magnotta F, Kotecki DE. Direct‐laser writing of silicon microstructures: Raman microprobe diagnostics and modeling of the nucleation phase of deposition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 4: 659-664. DOI: 10.1116/1.573824  0.571
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