Yiqun Liu, Ph.D.
Affiliations: | 2011 | Harvard University, Cambridge, MA, United States |
Area:
applied mathematics, quantum mechanics, spectroscopy, intermolecular forces, solid state and materials scienceGoogle:
"Yiqun Liu"Mean distance: 11.97
Parents
Sign in to add mentor| Roy Gerald Gordon | grad student | 2011 | Harvard | |
| (Atomic Layer Deposition of Rare-Earth Oxide Films for Microelectronics.) | ||||
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Publications
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| Han H, Zhang Q, Li W, et al. (2023) Interfacial Oxygen Octahedral Coupling-Driven Robust Ferroelectricity in Epitaxial NaBiTiO Thin Films. Research (Washington, D.C.). 6: 0191 |
| Li Y, Pan G, Wang J, et al. (2020) Tailoring the Polyamide Active Layer of Thin-Film Composite Forward Osmosis Membranes with Combined Cosolvents during Interfacial Polymerization Industrial & Engineering Chemistry Research. 59: 8230-8242 |
| Liu Y, Kim H, Wang J, et al. (2019) Effects of Low Temperature O2 Treatment on the Electrical Characteristics of Amorphous LaAlO3 Films by Atomic Layer Deposition Ecs Transactions. 16: 471-478 |
| Wang H, Madaan N, Bagley J, et al. (2015) Spectroscopic ellipsometric modeling of a Bi-Te-Se write layer of an optical data storage device as guided by atomic force microscopy, scanning electron microscopy, and X-ray diffraction Thin Solid Films. 569: 124-130 |
| Wang X, Dong L, Zhang J, et al. (2013) Heteroepitaxy of La2O3 and La(2-x)Y(x)O3 on GaAs (111)A by atomic layer deposition: achieving low interface trap density. Nano Letters. 13: 594-9 |
| Lee SW, Liu Y, Heo J, et al. (2012) Creation and control of two-dimensional electron gas using Al-based amorphous oxides/SrTiO₃ heterostructures grown by atomic layer deposition. Nano Letters. 12: 4775-83 |
| Liu Q, Dong L, Liu Y, et al. (2012) Frequency response of LaAlO 3/SrTiO 3 all-oxide field-effect transistors Solid-State Electronics. 76: 1-4 |
| Shen S, Liu Y, Gordon RG, et al. (2011) Impact of ultrathin Al2O3 diffusion barriers on defects in high- k LaLuO3 on Si Applied Physics Letters. 98 |
| Liu Y, Shen S, Brillson LJ, et al. (2011) Impact of ultrathin Al2 O3 barrier layer on electrical properties of LaLuO3 metal-oxide-semiconductor devices Applied Physics Letters. 98 |
| Heo J, Liu Y, Sinsermsuksakul P, et al. (2011) (Sn,Al)Ox films grown by atomic layer deposition Journal of Physical Chemistry C. 115: 10277-10283 |