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Bruce M. Green, Ph.D.

Affiliations: 
2001 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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"Bruce Green"
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Lester F. Eastman grad student 2001 Cornell
 (Characteristics, optimization, and integrated circuit applications of aluminum gallium nitride/gallium nitride high electron mobility transistors.)

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Publications

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Hartin O, Green B. (2010) AlGaN/GaN HEMT TCAD simulation and model extraction for RF applications Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 232-236
Hwang J, Schaff WJ, Green BM, et al. (2004) Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors Solid-State Electronics. 48: 363-366
Piel PM, Miller M, Green B. (2004) A 26 volts, 45 watts GaAs pHEMT for 2 GHz WCDMA applications Ieee Mtt-S International Microwave Symposium Digest. 3: 1363-1366
Green BM, Tilak V, Kaper VS, et al. (2003) Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions Ieee Transactions On Microwave Theory and Techniques. 51: 618-623
Eastman LF, Tilak V, Thompson R, et al. (2003) High power AlGaN/GaN HEMT's Institute of Physics Conference Series. 174: 227-230
Kaper V, Tilak V, Green B, et al. (2002) Time-domain characterization of nonlinear operation of an AlGaN/GaN HEMT 61st Arftg Conference Digest Spring 2003: Measurement Accuracy, Arftg Spring 2003. 97-102
Shealy JR, Kaper V, Tilak V, et al. (2002) An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer Journal of Physics Condensed Matter. 14: 3499-3509
Eastman LF, Tilak V, Kaper V, et al. (2002) Progress in high-power, high frequency AlGaN/GaN HEMTs Physica Status Solidi (a) Applied Research. 194: 433-438
Kaper V, Tilak V, Green B, et al. (2002) Dependence of Power and Efficiency of AlGaN/GaN HEMT's on the Load Resistance for Class B Bias Proceedings Ieee Lester Eastman Conference On High Performance Devices. 118-125
Green BM, Kaper VS, Tilak V, et al. (2002) Dynamic loadline analysis of AlGaN/GaN HEMTS Proceedings Ieee Lester Eastman Conference On High Performance Devices. 443-452
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