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Bruce M. Green, Ph.D. - Publications

Affiliations: 
2001 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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33 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2010 Hartin O, Green B. AlGaN/GaN HEMT TCAD simulation and model extraction for RF applications Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 232-236. DOI: 10.1109/BIPOL.2010.5667949  0.32
2004 Hwang J, Schaff WJ, Green BM, Cha H, Eastman LF. Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors Solid-State Electronics. 48: 363-366. DOI: 10.1016/S0038-1101(03)00324-1  0.671
2004 Piel PM, Miller M, Green B. A 26 volts, 45 watts GaAs pHEMT for 2 GHz WCDMA applications Ieee Mtt-S International Microwave Symposium Digest. 3: 1363-1366.  0.406
2003 Green BM, Tilak V, Kaper VS, Smart JA, Shealy JR, Eastman LF. Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions Ieee Transactions On Microwave Theory and Techniques. 51: 618-623. DOI: 10.1109/Tmtt.2002.807680  0.79
2003 Eastman LF, Tilak V, Thompson R, Green B, Kaper V, Prunty T, Shealy R, Smart J, Kim H. High power AlGaN/GaN HEMT's Institute of Physics Conference Series. 174: 227-230.  0.696
2002 Kaper V, Tilak V, Green B, Thompson R, Prunty T, Eastman LF, Shealy JR. Time-domain characterization of nonlinear operation of an AlGaN/GaN HEMT 61st Arftg Conference Digest Spring 2003: Measurement Accuracy, Arftg Spring 2003. 97-102. DOI: 10.1109/ARFTGS.2003.1216872  0.663
2002 Shealy JR, Kaper V, Tilak V, Prunty T, Smart JA, Green B, Eastman LF. An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer Journal of Physics Condensed Matter. 14: 3499-3509. DOI: 10.1088/0953-8984/14/13/308  0.8
2002 Eastman LF, Tilak V, Kaper V, Smart J, Thompson R, Green B, Shealy JR, Prunty T. Progress in high-power, high frequency AlGaN/GaN HEMTs Physica Status Solidi (a) Applied Research. 194: 433-438. DOI: 10.1002/1521-396X(200212)194:2<433::Aid-Pssa433>3.0.Co;2-R  0.772
2002 Kaper V, Tilak V, Green B, Prunty T, Smart J, Eastman LF, Shealy JR. Dependence of Power and Efficiency of AlGaN/GaN HEMT's on the Load Resistance for Class B Bias Proceedings Ieee Lester Eastman Conference On High Performance Devices. 118-125.  0.722
2002 Green BM, Kaper VS, Tilak V, Shealy JR, Eastman LF. Dynamic loadline analysis of AlGaN/GaN HEMTS Proceedings Ieee Lester Eastman Conference On High Performance Devices. 443-452.  0.685
2001 Kim H, Tilak V, Green BM, Cha HY, Smart JA, Shealy JR, Eastman LF. Degradation characteristics of AlGaN-GaN high electron mobility transistors Ieee International Reliability Physics Symposium Proceedings. 2001: 214-218. DOI: 10.1109/RELPHY.2001.922904  0.758
2001 Lee JW, Green BM, Tilak V, Lee S, Shealy JR, Eastman LF, Webb KJ. A broadband GaN push-pull distributed microwave power amplifier 2001 International Semiconductor Device Research Symposium, Isdrs 2001 - Proceedings. 391-393. DOI: 10.1109/ISDRS.2001.984526  0.747
2001 Tilak V, Green B, Kaper V, Kim H, Prunty T, Smart J, Shealy J, Eastman L. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs Ieee Electron Device Letters. 22: 504-506. DOI: 10.1109/55.962644  0.81
2001 Green BM, Tilak V, Lee S, Kim H, Smart JA, Webb KJ, Shealy JR, Eastman LF. High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates Ieee Transactions On Microwave Theory and Techniques. 49: 2486-2493. DOI: 10.1109/22.971640  0.774
2001 Eastman LF, Tilak V, Smart J, Green BM, Chumbes EM, Dimitrov R, Kim H, Ambacher OS, Weimann N, Prunty T, Murphy M, Schaff WJ, Shealy JR. Undoped AlGaN/GaN HEMTs for microwave power amplification Ieee Transactions On Electron Devices. 48: 479-485. DOI: 10.1109/16.906439  0.812
2001 Kim H, Tilak V, Green BM, Smart JA, Schaff WJ, Shealy JR, Eastman LF. Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate Physica Status Solidi (a) Applied Research. 188: 203-206. DOI: 10.1002/1521-396X(200111)188:1<203::Aid-Pssa203>3.0.Co;2-C  0.797
2001 Kim H, Tilak V, Green BM, Cha H, Smart JA, Shealy JR, Eastman LF. Degradation characteristics of AlGaN/GaN high electron mobility transistors Annual Proceedings - Reliability Physics (Symposium). 214-218.  0.734
2001 Green BM, Tilak V, Lee S, Kim H, Smart JA, Webb KJ, Shealy JR, Eastman LF. High-power broadband AlGaN/GaN HEMT MMIC's on SiC substrates Ieee Mtt-S International Microwave Symposium Digest. 2: 1059-1062.  0.766
2000 Tilak V, Dimitrov R, Murphy M, Green B, Smart J, Schaff WJ, Shealy JR, Eastman LF. Electric and morphology studies of ohmic contacts on AlGaN/GaN Materials Research Society Symposium - Proceedings. 622: T741-T746. DOI: 10.1557/Proc-622-T7.4.1  0.753
2000 Ambacher O, Link A, Hackenbuchner S, Stutzmann M, Dimitrov R, Murphy M, Smart J, Shealy JR, Green B, Schaff WJ, Eastman LF. 2DEGs and 2DHGs induced by spontaneous and piezoelectric polarization in AlGaN/GaN heterostructures Materials Research Society Symposium - Proceedings. 622: T5101-T5106. DOI: 10.1557/Proc-622-T5.10.1  0.687
2000 Green BM, Chu KK, Smart JA, Tilak V, Kim H, Shealy JR, Eastman LF. Cascode connected AlGaN/GaN HEMTs on SiC substrates Ieee Microwave and Guided Wave Letters. 10: 316-318. DOI: 10.1109/75.862226  0.796
2000 Green BM, Lee S, Chu K, Webb KJ, Eastman LF. High efficiency monolithic gallium nitride distributed amplifier Ieee Microwave and Wireless Components Letters. 10: 270-272. DOI: 10.1109/75.856985  0.615
2000 Green BM, Chu KK, Chumbes EM, Smart JA, Shealy JR, Eastman LF. Effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's Ieee Electron Device Letters. 21: 268-270. DOI: 10.1109/55.843146  0.788
2000 Dimitrov R, Tilak V, Yeo W, Green B, Kim H, Smart J, Chumbes E, Shealy JR, Schaff W, Eastman LF, Miskys C, Ambacher O, Stutzmann M. Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors Solid-State Electronics. 44: 1361-1365. DOI: 10.1016/S0038-1101(00)00085-X  0.777
2000 Lee S, Green B, Chu K, Webb KJ, Eastman LF. Demonstration of a high efficiency nonuniform monolithic gallium-nitride distributed amplifier Ieee Mtt-S International Microwave Symposium Digest. 1: 549-552.  0.302
2000 Tilak V, Green B, Kim H, Dimitrov R, Smart J, Schaff WJ, Shealy JR, Eastman LF. Effect of passivation on AlGaN/GaN HEMT device performance Ieee International Symposium On Compound Semiconductors, Proceedings. 357-363.  0.735
2000 Eastman LF, Green B, Smart J, Tilak V, Chumbes E, Kim H, Prunty T, Weimann N, Dimitrov R, Ambacher O, Schaff WJ, Shealy JR. Power limits of polarization-induced AlGaN/GaN HEMT's Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 242-246.  0.745
2000 Green BM, Kim H, Chu KK, Lin HS, Tilak V, Shealy JR, Smart JA, Eastman LF. Validation of an analytical large signal model for AlGaN/GaN HEMTs Ieee Mtt-S International Microwave Symposium Digest. 2: 761-764.  0.602
2000 Green BM, Kim H, Tilak V, Shealy JR, Smart JA, Eastman LF. Validation of an analytical large signal model for AlGaN/GaN HEMT's on SiC substrates Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 237-241.  0.613
2000 Lee S, Green BM, Lee J, Webb KJ, Eastman LF. High efficiency GaN cascode-connected HEMT nonuniform distributed amplifier Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 79-83.  0.454
2000 Green BM, Chu KK, Smart JA, Tilak V, Kim H, Shealy JR, Eastman LF. Cascode connected A1GaN/GaN HEMT's on SiC substrates Ieee Microwave and Wireless Components Letters. 10: 316-318.  0.638
1999 Ambacher O, Dimitrov R, Stutzmann M, Foutz BE, Murphy MJ, Smart JA, Shealy JR, Weimann NG, Chu K, Chumbes M, Green B, Sierakowski AJ, Schaff WJ, Eastman LF. Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices Physica Status Solidi B-Basic Solid State Physics. 216: 381-389. DOI: 10.1002/(Sici)1521-3951(199911)216:1<381::Aid-Pssb381>3.0.Co;2-O  0.766
1999 Ambacher O, Dimitrov R, Stutzmann M, Foutz BE, Murphy MJ, Smart JA, Shealy JR, Weimann NG, Chu K, Chumbes M, Green B, Sierakowski AJ, Schaff WJ, Eastman LF. Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices Physica Status Solidi (B) Basic Research. 216: 381-389.  0.6
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