Yang K. Choi, Ph.D.
Affiliations: | 2001 | University of California, Berkeley, Berkeley, CA, United States |
Area:
Semiconductor Device TechnologiesGoogle:
"Yang Choi"Parents
Sign in to add mentor| Chenming Hu | grad student | 2001 | UC Berkeley | |
| (Nanofabrication technologies and novel device structures for nanoscale CMOS.) | ||||
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Publications
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| Shin GH, Lee GB, An ES, et al. (2020) High-Performance Field-Effect Transistor and Logic Gates based on GaS-MoS2 van der Waals Heterostructure. Acs Applied Materials & Interfaces |
| Han J, Hur J, Kim W, et al. (2020) A Study of High-Temperature Effects on an Asymmetrically Doped Vertical Pillar-Type Field-Effect Transistor Ieee Transactions On Nanotechnology. 19: 52-55 |
| Son JW, Hur J, Kim W, et al. (2020) A Strategy for Optimizing Low Operating Voltage in a Silicon Biristor Ieee Transactions On Nanotechnology. 19: 5-10 |
| Yu J, Park J, Yoo TJ, et al. (2020) Quantitative Analysis of High-Pressure Deuterium Annealing Effects on Vertically Stacked Gate-All-Around SONOS Memory Ieee Transactions On Electron Devices. 67: 3903-3907 |
| Park J, Moon D, Lee G, et al. (2020) Curing of Aged Gate Dielectric by the Self-Heating Effect in MOSFETs Ieee Transactions On Electron Devices. 67: 777-788 |
| Han J, Seo M, Yu J, et al. (2020) A Single Transistor Neuron With Independently Accessed Double-Gate for Excitatory-Inhibitory Function and Tunable Firing Threshold Voltage Ieee Electron Device Letters. 41: 1157-1160 |
| Lee TY, Lee SH, Son JW, et al. (2020) Analysis of fluorine effects on charge-trap flash memory of W/TiN/Al2O3/Si3N4/SiO2/poly-Si gate stack Solid-State Electronics. 164: 107713 |
| Lee G, Kim C, Bang T, et al. (2020) Analysis of damage curing in a MOSFET with joule heat generated by forward junction current at the source and drain Microelectronics Reliability. 104: 113548 |
| Kwon J, Lee BH, Kim SY, et al. (2019) Nanoscale FET-Based Transduction toward Sensitive Extended-Gate Biosensors. Acs Sensors |
| Shin GH, Park J, Lee KJ, et al. (2019) Si-MoS2 Vertical Heterojunction for Photodetector with High Responsivity and Low Noise Equivalent Power. Acs Applied Materials & Interfaces |