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Ramakrishnan Vaidyanathan, Ph.D.

Affiliations: 
2007 University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
Area:
Chemical Engineering
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Edmund G. Seebauer grad student 2007 UIUC
 (New forms of defect engineering in silicon and metal oxide semiconductors.)

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Publications

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Seebauer EG, Jung MYL, Kwok CTM, et al. (2011) Measurement of photostimulated self-diffusion in silicon Journal of Applied Physics. 109
Vaidyanathan R, Felch S, Graoui H, et al. (2011) Nonthermal illumination effects on ultra-shallow junction formation Applied Physics Letters. 98
Chen K, Vaidyanathan R, Seebauer EG, et al. (2010) General expression for effective diffusivity of foreign atoms migrating via a fast intermediate Journal of Applied Physics. 107
Vaidyanathan R, Jung MYL, Seebauer EG. (2007) Mechanism and energetics of self-interstitial formation and diffusion in silicon Physical Review B - Condensed Matter and Materials Physics. 75
Yeong SH, Srinivasan MP, Colombeau B, et al. (2007) Defect engineering by surface chemical state in boron-doped preamorphized silicon Applied Physics Letters. 91
Seebauer EG, Dev K, Jung MY, et al. (2006) Control of defect concentrations within a semiconductor through adsorption. Physical Review Letters. 97: 055503
Zhang X, Yu M, Kwok CTM, et al. (2006) Precursor mechanism for interaction of bulk interstitial atoms with Si(100) Physical Review B - Condensed Matter and Materials Physics. 74
Vaidyanathan R, Seebauer EG, Graoui H, et al. (2006) Influence of surface adsorption in improving ultrashallow junction formation Applied Physics Letters. 89
Vaidyanathan R, Jung MYL, Braatz RD, et al. (2006) Measurement of defect-mediated diffusion: The case of silicon self-diffusion Aiche Journal. 52: 366-370
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