Mary E. Zvanut
Affiliations: | University of Alabama, Birmingham, Birmingham, AL, United States |
Area:
Condensed Matter PhysicsGoogle:
"Mary Zvanut"Mean distance: (not calculated yet)
Children
Sign in to add trainee| Patricia J. Macfarlane | grad student | 2000 | UAB |
| Wonwoo Lee | grad student | 2006 | UAB |
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Publications
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| Bhandari S, Zvanut ME. (2020) Optical transitions for impurities in Ga2O3 as determined by photo-induced electron paramagnetic resonance spectroscopy Journal of Applied Physics. 127: 65704 |
| Paudel S, Zvanut ME, Iwinska M, et al. (2020) A Deep Carbon‐Related Acceptor Identified through Photo‐Induced Electron Paramagnetic Resonance Physica Status Solidi B-Basic Solid State Physics. 257: 1900593 |
| Sunay UR, Zvanut ME, Marbey J, et al. (2019) Small non-uniform basal crystal fields in HVPE free-standing GaN:Mg as evidenced by angular dependent and frequency-dependent EPR. Journal of Physics. Condensed Matter : An Institute of Physics Journal |
| Bhandari S, Zvanut ME, Varley JB. (2019) Optical absorption of Fe in doped Ga2O3 Journal of Applied Physics. 126: 165703 |
| Willoughby WR, Zvanut ME, Bockowski M. (2019) Photo-EPR study of compensated defects in Be-doped GaN substrates Journal of Applied Physics. 125: 75701 |
| Zvanut ME, Paudel S, Glaser ER, et al. (2019) Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates Journal of Electronic Materials. 48: 2226-2232 |
| Zvanut ME, Paudel S, Sunay UR, et al. (2018) Charge transfer process for carbon-related center in semi-insulating carbon-doped GaN Journal of Applied Physics. 124: 75701 |
| Willoughby WR, Zvanut ME, Paudel S, et al. (2018) A compensating point defect in carbon-doped GaN substrates studied with electron paramagnetic resonance spectroscopy Journal of Applied Physics. 123: 161547 |
| Zvanut ME, Dashdorj J, Sunay UR, et al. (2016) Effect of local fields on the Mg acceptor in GaN films and GaN substrates Journal of Applied Physics. 120 |
| Willoughby WR, Zvanut ME, Dashdorj J, et al. (2016) A model for Be-related photo-absorption in compensated GaN:Be substrates Journal of Applied Physics. 120 |