| Year |
Citation |
Score |
| 2020 |
Bhandari S, Zvanut ME. Optical transitions for impurities in Ga2O3 as determined by photo-induced electron paramagnetic resonance spectroscopy Journal of Applied Physics. 127: 65704. DOI: 10.1063/1.5140193 |
0.377 |
|
| 2020 |
Paudel S, Zvanut ME, Iwinska M, Sochacki T, Bockowski M. A Deep Carbon‐Related Acceptor Identified through Photo‐Induced Electron Paramagnetic Resonance Physica Status Solidi B-Basic Solid State Physics. 257: 1900593. DOI: 10.1002/Pssb.201900593 |
0.312 |
|
| 2019 |
Sunay UR, Zvanut ME, Marbey J, Hill S, Leach J, Udwary K. Small non-uniform basal crystal fields in HVPE free-standing GaN:Mg as evidenced by angular dependent and frequency-dependent EPR. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 31096190 DOI: 10.1088/1361-648X/Ab21Ec |
0.302 |
|
| 2019 |
Bhandari S, Zvanut ME, Varley JB. Optical absorption of Fe in doped Ga2O3 Journal of Applied Physics. 126: 165703. DOI: 10.1063/1.5124825 |
0.305 |
|
| 2019 |
Willoughby WR, Zvanut ME, Bockowski M. Photo-EPR study of compensated defects in Be-doped GaN substrates Journal of Applied Physics. 125: 75701. DOI: 10.1063/1.5058142 |
0.37 |
|
| 2019 |
Zvanut ME, Paudel S, Glaser ER, Iwinska M, Sochacki T, Bockowski M. Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates Journal of Electronic Materials. 48: 2226-2232. DOI: 10.1007/S11664-019-07016-W |
0.384 |
|
| 2018 |
Zvanut ME, Paudel S, Sunay UR, Willoughby WR, Iwinska M, Sochacki T, Bockowski M. Charge transfer process for carbon-related center in semi-insulating carbon-doped GaN Journal of Applied Physics. 124: 75701. DOI: 10.1063/1.5037598 |
0.401 |
|
| 2018 |
Willoughby WR, Zvanut ME, Paudel S, Iwinska M, Sochacki T, Bockowski M. A compensating point defect in carbon-doped GaN substrates studied with electron paramagnetic resonance spectroscopy Journal of Applied Physics. 123: 161547. DOI: 10.1063/1.5004411 |
0.42 |
|
| 2016 |
Zvanut ME, Dashdorj J, Sunay UR, Leach JH, Udwary K. Effect of local fields on the Mg acceptor in GaN films and GaN substrates Journal of Applied Physics. 120. DOI: 10.1063/1.4963112 |
0.353 |
|
| 2016 |
Willoughby WR, Zvanut ME, Dashdorj J, Bockowski M. A model for Be-related photo-absorption in compensated GaN:Be substrates Journal of Applied Physics. 120. DOI: 10.1063/1.4962460 |
0.388 |
|
| 2016 |
Zvanut ME, Dashdorj J, Freitas JA, Glaser ER, Willoughby WR, Leach JH, Udwary K. Incorporation of Mg in Free-Standing HVPE GaN Substrates Journal of Electronic Materials. 45: 2692-2696. DOI: 10.1007/S11664-016-4413-9 |
0.369 |
|
| 2015 |
Poole VM, Dashdorj J, Zvanut ME, McCluskey MD. Large Persistent Photoconductivity in Strontium Titanate at Room Temperature Mrs Proceedings. 1792. DOI: 10.1557/Opl.2015.531 |
0.419 |
|
| 2015 |
Sunay UR, Zvanut ME, Allerman AA. The effects of Al on the neutral Mg acceptor impurity in Al<inf>x</inf>Ga<inf>1-x</inf>N Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 357-360. DOI: 10.1002/Pssc.201400184 |
0.349 |
|
| 2015 |
Dashdorj J, Willoughby WR, Zvanut ME, Bockowski M. Electron paramagnetic resonance studies of bulk Mg-doped GaN grown by high nitrogen pressure solution method Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 338-340. DOI: 10.1002/Pssc.201400181 |
0.409 |
|
| 2015 |
Dashdorj J, Zvanut ME, Bockowski M. Determination of an acceptor level in bulk GaN grown by high nitrogen pressure solution method Physica Status Solidi (B) Basic Research. 252: 923-927. DOI: 10.1002/Pssb.201451567 |
0.426 |
|
| 2014 |
Sunay UR, Zvanut ME, Allerman AA. Reduction in the Number of Mg Acceptors with Al Concentration in Al<inf>x</inf>Ga<inf>1−x</inf>N Journal of Electronic Materials. 44: 4139-4143. DOI: 10.1007/S11664-014-3475-9 |
0.366 |
|
| 2014 |
Zvanut ME, Willoughby WR, Sunay UR, Koleske DD, Allerman AA, Wang K, Araki T, Nanishi Y. The effect of growth parameters on the Mg acceptor in InxGa1-xN: MG and AlxGa1-xN: Mg Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 594-597. DOI: 10.1002/Pssc.201300515 |
0.352 |
|
| 2013 |
Zvanut ME, Willoughby WR, Koleske DD. The source of holes in p-type InxGa1-xN films Proceedings of Spie - the International Society For Optical Engineering. 8625. DOI: 10.1117/12.2002569 |
0.324 |
|
| 2012 |
Zvanut ME, Sunay UR, Dashdorj J, Willoughby WR, Allerman AA. Mg-hydrogen interaction in AlGaN alloys Proceedings of Spie - the International Society For Optical Engineering. 8262. DOI: 10.1117/12.916073 |
0.394 |
|
| 2012 |
Dashdorj J, Zvanut ME, Harrison JG, Udwary K, Paskova T. Charge transfer in semi-insulating Fe-doped GaN Journal of Applied Physics. 112. DOI: 10.1063/1.4732352 |
0.338 |
|
| 2011 |
Zvanut ME, Uprety Y, Dashdorj J, Moseley M, Alan Doolittle W. Passivation and activation of Mg acceptors in heavily doped GaN Journal of Applied Physics. 110. DOI: 10.1063/1.3626461 |
0.391 |
|
| 2010 |
Zvanut ME, Thomas SA, Dashdorj J. Intrinsic surface defects on 4H SiC substrates Materials Research Society Symposium Proceedings. 1246: 43-48. DOI: 10.1557/Proc-1246-B03-03 |
0.425 |
|
| 2009 |
Glaser ER, Garces NY, Caldwell JD, Carlos WE, Zvanut ME, Magnusson B, Hansen DM, Chung G, Loboda MJ. Infrared PL signatures of n-type bulk SiC substrates with nitrogen impurity concentration between 1016 and 1017 cm-3 Materials Science Forum. 600: 449-452. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.449 |
0.374 |
|
| 2009 |
Zvanut ME, Ngetich G, Chung HJ, Polyakov AY, Skowronski M, Garces NY, Glaser ER. Defect level of the carbon vacancy-carbon antisite pair center in Si 4H SiC Materials Science Forum. 600: 385-388. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.385 |
0.464 |
|
| 2009 |
Zvanut ME, Ngetich G, Dashdorj J, Garces NY, Glaser ER. Photoinduced behavior of the VC C Si - Pair defect in 4H -SiC grown by physical vapor transport and halide chemical vapor deposition Journal of Applied Physics. 106. DOI: 10.1063/1.3224892 |
0.474 |
|
| 2009 |
Rozen J, Dhar S, Zvanut ME, Williams JR, Feldman LC. Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC Journal of Applied Physics. 105. DOI: 10.1063/1.3131845 |
0.449 |
|
| 2008 |
Dashdorj J, Zvanut ME. Study of chromium impurities in SrTiO3 by photo-electron paramagnetic resonance spectroscopy Materials Research Society Symposium Proceedings. 1034: 26-31. DOI: 10.1557/Proc-1034-K10-19 |
0.373 |
|
| 2008 |
Dashdorj J, Zvanut ME, Harrison JG. Measurements of optical cross sections of the carbon vacancy in 4H-SiC by time-dependent photoelectron paramagnetic resonance Journal of Applied Physics. 104. DOI: 10.1063/1.3032907 |
0.374 |
|
| 2008 |
Zvanut ME, Jeddy S, Towett E, Janowski GM, Brooks C, Schlom D. An annealing study of an oxygen vacancy related defect in SrTiO3 substrates Journal of Applied Physics. 104. DOI: 10.1063/1.2986244 |
0.394 |
|
| 2008 |
Zvanut ME, Ngetich G, Chung HJ, Polyakov AY, Skowronski M. A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition Journal of Materials Science: Materials in Electronics. 19: 678-681. DOI: 10.1007/S10854-007-9378-2 |
0.491 |
|
| 2007 |
Zvanut ME, Chung HJ, Polyakov AY, Skowronski M. Point defects in 4H SiC grown by halide chemical vapor deposition Materials Science Forum. 556: 473-476. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.473 |
0.452 |
|
| 2007 |
Mitchel WC, Mitchell WD, Landis G, Smith HE, Lee W, Zvanut ME. Vanadium donor and acceptor levels in semi-insulating 4H - And 6H-SiC Journal of Applied Physics. 101. DOI: 10.1063/1.2407263 |
0.602 |
|
| 2007 |
Zvanut ME, van Tol J. Nitrogen-related point defect in 4H and 6H SiC Physica B: Condensed Matter. 401: 73-76. DOI: 10.1016/J.Physb.2007.08.116 |
0.424 |
|
| 2007 |
Lee W, Zvanut ME. A study of deep defect levels in semi-insulating SiC using optical admittance spectroscopy Journal of Electronic Materials. 36: 623-628. DOI: 10.1007/S11664-007-0100-1 |
0.611 |
|
| 2006 |
Lee W, Zvanut ME. The optical admittance spectroscopy of the vanadium donor and acceptor levels in semi-insulating 4H-SiC and 6H-SiC Materials Science Forum. 527: 647-650. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.647 |
0.406 |
|
| 2006 |
Zvanut ME, Lee W, Wang H, Mitchel WC, Mitchell WD. Deep level point defects in semi-insulating SiC Materials Science Forum. 527: 517-522. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.517 |
0.504 |
|
| 2006 |
Jeddy S, Zvanut ME, Lassiter BE, Janowski GM, Brillson LJ. Thermal stability of defects in substrates for multiferroic materials Materials Research Society Symposium Proceedings. 966: 265-269. DOI: 10.1557/Proc-0966-T05-04 |
0.396 |
|
| 2006 |
Lee W, Zvanut ME. A study of V3+/4+ levels in semi-insulating 6H-SiC using optical admittance and electron paramagnetic resonance spectroscopies Materials Research Society Symposium Proceedings. 911: 231-235. DOI: 10.1557/Proc-0911-B06-05 |
0.572 |
|
| 2006 |
Mitchel WC, Mitchell WD, Smith HE, Zvanut ME, Lee W. Electrical Measurement of the Vanadium Acceptor Level in 4H- and 6H-SiC Mrs Proceedings. 911. DOI: 10.1557/PROC-0911-B05-06 |
0.329 |
|
| 2006 |
Mitchel WC, Mitchell WD, Smith HE, Zvanut ME, Lee W. Electrical measurement of the vanadium acceptor level in 4H- and 6H-SiC Materials Research Society Symposium Proceedings. 911: 225-230. DOI: 10.1557/Proc-0911-B05-06 |
0.628 |
|
| 2006 |
Zvanut ME, Lee W, Mitchel WC, Mitchell WD, Landis G. The acceptor level for vanadium in 4H and 6H SiC Physica B: Condensed Matter. 376: 346-349. DOI: 10.1016/J.Physb.2005.12.089 |
0.623 |
|
| 2005 |
Zvanut ME, Wang H, Richards M, Konovalov VV. Observation of a spin one native defect in as-grown high-purity semi-insulating 4H SiC Journal of Applied Physics. 97. DOI: 10.1063/1.1928329 |
0.44 |
|
| 2005 |
Matlock DM, Zvanut ME, Wang H, Dimaio JR, Davis RF, Van Nostrand JE, Henry RL, Koleske D, Wickenden A. The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy Journal of Electronic Materials. 34: 34-39. DOI: 10.1007/S11664-005-0177-3 |
0.417 |
|
| 2004 |
Zvanut ME, Konovalov VV, Mitchel WC, Mitchell WD. Optically induced transitions among point defects in high purity and vanadium-doped semi-insulating 4H SiC Materials Science Forum. 457: 489-492. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.489 |
0.43 |
|
| 2004 |
Zvanut ME, Konovalov VV, Wang H, Mitchel WC, Mitchell WD, Landis G. Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H-SiC Journal of Applied Physics. 96: 5484-5489. DOI: 10.1063/1.1797547 |
0.48 |
|
| 2004 |
Zvanut ME, Matlock DM, Henry RL, Koleske D, Wickenden A. Thermal activation of Mg-doped GaN as monitored by electron paramagnetic resonance spectroscopy Journal of Applied Physics. 95: 1884-1887. DOI: 10.1063/1.1639954 |
0.44 |
|
| 2004 |
Mitchel WC, Mitchell WD, Zvanut ME, Landis G. High temperature Hall effect measurements of semi-insulating 4H-SiC substrates Solid-State Electronics. 48: 1693-1697. DOI: 10.1016/J.Sse.2004.02.025 |
0.426 |
|
| 2004 |
Johnson MB, Mirov SB, Fedorov V, Zvanut ME, Harrison JG, Badikov VV, Shevirdyaeva GS. Absorption and photoluminescence studies of CdGa2S 4:Cr Optics Communications. 233: 403-410. DOI: 10.1016/J.Optcom.2004.01.054 |
0.316 |
|
| 2004 |
Zvanut ME. Electron paramagnetic resonance of electronic-grade SiC substrates Journal of Physics Condensed Matter. 16. DOI: 10.1002/CHIN.200518209 |
0.416 |
|
| 2003 |
Konovalov VV, Zvanut ME, Van Tol J. 240 GHz electron paramagnetic resonance studies of intrinsic defects in as-grown 4H SiC Physical Review B - Condensed Matter and Materials Physics. 68: 121021-121024. DOI: 10.1103/Physrevb.68.012102 |
0.457 |
|
| 2003 |
Alvarez D, Konovalov VV, Zvanut ME. Effects of high-temperature annealing on defects and impurities in As-grown semi-insulating 4H SiC Journal of Electronic Materials. 32: 444-447. DOI: 10.1007/S11664-003-0175-2 |
0.46 |
|
| 2002 |
Matlock D, Zvanut ME, DiMaio JR, Davis RF, Henry RL, Koleske D, Wickenden A. Activation of Mg acceptors in GaN:Mg monitored by electron paramagnetic resonance spectroscopy Materials Research Society Symposium - Proceedings. 743: 819-824. DOI: 10.1557/Proc-743-L11.59 |
0.392 |
|
| 2002 |
Zvanut ME, Konovalov VV. The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance Applied Physics Letters. 80: 410-412. DOI: 10.1063/1.1432444 |
0.414 |
|
| 2002 |
Konovalov VV, Zvanut ME. Interactions between intrinsic defects and nitrogen/boron impurities in high-resistivity 4H SiC: Electron paramagnetic resonance study Journal of Electronic Materials. 31: 351-355. DOI: 10.1007/S11664-002-0081-Z |
0.454 |
|
| 2001 |
Macfarlane PJ, Zvanut ME, Janowski GM. Intrinsic point defects in oxidized 3C epitaxial layers on Si substrates Journal of Applied Physics. 89: 955-959. DOI: 10.1063/1.1333741 |
0.781 |
|
| 2001 |
Konovalov VV, Zvanut ME, Tsvetkov VF, Jenny JR, Müller SG, Hobgood HM. Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H-SiC Physica B: Condensed Matter. 308: 671-674. DOI: 10.1016/S0921-4526(01)00789-X |
0.455 |
|
| 2000 |
Macfarlane PJ, Zvanut ME. Effects of oxidation conditions on the concentration of carbon dangling bonds in oxidized 6H-SiC Materials Science Forum. 338. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1125 |
0.8 |
|
| 2000 |
Macfarlane PJ, Zvanut ME. Characterization of paramagnetic defect centers in three polytypes of dry heat treated, oxidized SiC Journal of Applied Physics. 88: 4122-4127. DOI: 10.1063/1.1311810 |
0.795 |
|
| 2000 |
Johnson MB, Zvanut ME, Richardson O. HF chemical etching of SiO2 on 4H and 6H SiC Journal of Electronic Materials. 29: 368-371. DOI: 10.1007/S11664-000-0079-3 |
0.488 |
|
| 1999 |
Macfarlane PJ, Zvanut ME. Effect of varying oxidation parameters on the generation of C-dangling bond centers in oxidized SiC Materials Research Society Symposium - Proceedings. 572: 51-55. DOI: 10.1557/Proc-572-51 |
0.798 |
|
| 1999 |
Macfarlane PJ, Zvanut ME. Reduction and creation of paramagnetic centers on surfaces of three different polytypes of SiC Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 1627-1631. DOI: 10.1116/1.590802 |
0.799 |
|
| 1999 |
Price KJ, McNeil LE, Suvkanov A, Irene EA, MacFarlane PJ, Zvanut ME. Characterization of the luminescence center in photo- and electroluminescent amorphous silicon oxynitride films Journal of Applied Physics. 86: 2628-2637. DOI: 10.1063/1.371102 |
0.765 |
|
| 1999 |
Zvanut ME, Chun W, Stahlbush RE. Effect of confinement and temperature on the initial hole trapping efficiency of buried oxide films Microelectronic Engineering. 48: 347-350. DOI: 10.1016/S0167-9317(99)00402-5 |
0.482 |
|
| 1999 |
Macfarlane PJ, Zvanut ME. Dangling bond defects in SiC: The dependence on oxidation time Microelectronic Engineering. 48: 269-272. DOI: 10.1016/S0167-9317(99)00386-X |
0.804 |
|
| 1999 |
Macfarlane PJ, Zvanut ME. Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC Journal of Electronic Materials. 28: 144-147. DOI: 10.1007/S11664-999-0004-3 |
0.804 |
|
| 1998 |
MacFarlane PJ, Zvanut ME. EPR study of the role of hydrogen in the defect formation upon heat treatment of oxidized SiC Materials Research Society Symposium - Proceedings. 513: 433-438. DOI: 10.1557/Proc-513-433 |
0.813 |
|
| 1998 |
Gogotsi Y, Kraft T, Nickel KG, Zvanut ME. Hydrothermal behavior of diamond Diamond and Related Materials. 7: 1459-1465. DOI: 10.1016/S0925-9635(98)00199-X |
0.396 |
|
| 1998 |
Lin H, Zvanut ME. Near-interface trapped charge induced by Fowler-Nordheim injection in hydrogen or argon annealed MOS capacitors Journal of Electronic Materials. 27: 838-841. DOI: 10.1007/S11664-998-0106-3 |
0.453 |
|
| 1997 |
Zvanut ME, Chen TL. Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO2 Materials Science Forum. 7-10. DOI: 10.4028/Www.Scientific.Net/Msf.239-241.7 |
0.329 |
|
| 1997 |
Macfarlane PJ, Zvanut ME. The interaction of H2O with an electron paramagnetic resonance center in oxidized, heat treated SiC Applied Physics Letters. 71: 2148-2150. DOI: 10.1063/1.119364 |
0.78 |
|
| 1997 |
Zvanut ME, Macfarlane PJ. Properties of Eδ' center in microelectronic grade oxide films Microelectronic Engineering. 36: 197-200. DOI: 10.1016/S0167-9317(97)00047-6 |
0.772 |
|
| 1997 |
Zvanut ME, Chen TL. Generation and annealing kinetics of oxygen vacancy and oxygen excess centers in thin film SiO2 Materials Science Forum. 239: 7-10. |
0.362 |
|
| 1996 |
Macfarlane PJ, Zvanut ME, Carlos WE, Twigg ME, Thompson PE. Ge-related interfacial defects in SiGe alloy structures Materials Research Society Symposium - Proceedings. 406: 573-578. DOI: 10.1557/Proc-405-453 |
0.786 |
|
| 1996 |
Zvanut ME, Chen TL. Production of E′δ center induced by dry heat treatment of nonburied SiO2 films Applied Physics Letters. 69: 28-30. |
0.332 |
|
| 1994 |
Zvanut ME, Benefield C, Hughes HL, Lawrence RK. Effect of Supplemental O Implantation on the Radiation-Induced Hole Traps in SIMOX Buried Oxides Ieee Transactions On Nuclear Science. 41: 2284-2290. DOI: 10.1109/23.340577 |
0.37 |
|
| 1994 |
Zvanut ME, Carlos WE, Freitas JA, Jamison KD, Hellmer RP. Identification of phosphorus in diamond thin films using electron paramagnetic-resonance spectroscopy Applied Physics Letters. 65: 2287-2289. DOI: 10.1063/1.112720 |
0.358 |
|
| 1994 |
Zhang S, Zvanut ME, Vohra YK, Vagarali SS. Nitrogen in the isotopically enriched 12C diamond Applied Physics Letters. 65: 2951-2953. DOI: 10.1063/1.112544 |
0.36 |
|
| 1993 |
Zvanut ME, Carlos WE, Paine DC, Caragianis C. Atomic structure of Ge-related point defects in Ge-incorporated oxide films Applied Physics Letters. 63: 3049-3051. DOI: 10.1063/1.110254 |
0.489 |
|
| 1992 |
Zvanut ME, Carlos WE, Twigg ME, Stahlbush RE, Godbey DJ. Observation of a Trivalent Ge Defect in Oxygen Implanted SiGe Alloys Materials Science Forum. 1493-1498. DOI: 10.4028/Www.Scientific.Net/Msf.83-87.1493 |
0.324 |
|
| 1992 |
Zvanut ME, Carlos WE, Twigg ME, Stahlbush RE, Godbey DJ. Interfacial point defects in heavily implanted silicon germanium alloys Journal of Vacuum Science & Technology B. 10: 2026-2029. DOI: 10.1116/1.586310 |
0.395 |
|
| 1992 |
Twigg ME, Zvanut ME, Stahlbush R, Godbey DJ, Jenkins WC. Distribution of Ge in O+ implanted silicon Applied Physics Letters. 61: 3142-3144. DOI: 10.1063/1.107987 |
0.418 |
|
| 1992 |
Zvanut ME, Stahlbush RE, Carlos WE. Radiation-induced E' centers in H2-annealed oxide films Applied Physics Letters. 60: 2989-2991. DOI: 10.1063/1.106785 |
0.519 |
|
| 1991 |
Zvanut ME, Carlos WE, Prokes SM, Stahlbush RE. Defect Centers Formed During Wet Oxidation of Si-Ge/Si Heterostructures Mrs Proceedings. 220: 199. DOI: 10.1557/Proc-220-199 |
0.475 |
|
| 1991 |
Zvanut ME, Stahlbush RE, Carlos WE, Hughes HL, Lawrence RK. SIMOX with epitaxial silicon: point defects and positive charge Ieee Transactions On Nuclear Science. 38: 1253-1258. DOI: 10.1109/23.124101 |
0.436 |
|
| 1991 |
Wang K, Han D, Zvanut ME, Silver M. Temperature and current dependence of electroluminescence in a-Si: H Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 63: 175-187. DOI: 10.1080/01418639108224438 |
0.343 |
|
| 1989 |
Zvanut ME, Feigl FJ, Fowler WB, Rudra JK, Caplan PJ, Poindexter EH, Zook JD. Rechargeable E' centers in sputter-deposited silicon dioxide films Applied Physics Letters. 54: 2118-2120. DOI: 10.1063/1.101512 |
0.424 |
|
| 1989 |
Jernigan JC, Surridge NA, Zvanut ME, Silver M, Murray RW. Electrical-field-driven electron self-exchange in a mixed-valent osmium(II/III) bipyridine polymer: solid-state reactions of low exothermicity The Journal of Physical Chemistry. 93: 4620-4627. DOI: 10.1021/J100348A043 |
0.325 |
|
| 1988 |
Zvanut ME, Feigl FJ, Zook JD. A defect relaxation model for bias instabilities in metal-oxide- semiconductor capacitors Journal of Applied Physics. 64: 2221-2223. DOI: 10.1063/1.341688 |
0.355 |
|
| 1986 |
Trombetta LP, Zeto RJ, Feigl FJ, Zvanut ME. Electrical Properties of Silicon Dioxide Films Fabricated at 700 ° C. Cheminform. 17. DOI: 10.1002/Chin.198611011 |
0.344 |
|
| 1985 |
Trombetta LP, Zeto RJ, Feigl FJ, Zvanut ME. ELECTRICAL PROPERTIES OF SILICON DIOXIDE FILMS FABRICATED AT 700 degree C. III. HIGH PRESSURE THERMAL OXIDATION. Journal of the Electrochemical Society. 132: 2706-2713. DOI: 10.1149/1.2113651 |
0.421 |
|
| 1985 |
Zvanut ME, Feigl FJ, Butler SR, Titcomb SL. Electrical properties of silicon dioxide films fabricated at 700°C. II: Low pressure hydride deposition Journal of Electronic Materials. 14: 343-366. DOI: 10.1007/Bf02661227 |
0.482 |
|
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