Judy L. Hoyt
Affiliations: | Stanford University, Palo Alto, CA |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Judy Hoyt"
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Publications
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| Hashemi P, Poweleit C, Canonico M, et al. (2019) Advanced Strained-Silicon and Core-Shell Si/Si1-xGex Nanowires for CMOS Transport Enhancement Ecs Transactions. 33: 687-698 |
| Kim M, Olubuyide O, Yoon J, et al. (2019) Selective Epitaxial Growth of Ge-on-Si for Photodiode Applications Ecs Transactions. 16: 837-847 |
| Hoyt J, Hashemi P, Gomez L. (2019) Prospects for Top-Down Fabricated Uniaxial Strained Nanowire MOSFETs Ecs Transactions. 16: 731-734 |
| Hashemi P, Canonico M, Yang JK, et al. (2019) Fabrication and Characterization of Suspended Uniaxial Tensile Strained-Si Nanowires for Gate-All-Around Nanowire n-MOSFETs Ecs Transactions. 16: 57-68 |
| Ni Chleirigh C, Wang X, Rimple G, et al. (2019) Laser Spike Annealing of Strained Si/ Strained Si0.3Ge0.7/ Relaxed Si0.7Ge0.3 Dual Channel High Mobility p-MOSFETs Ecs Transactions. 3: 355-362 |
| Ni Chleirigh C, Olubuyide O, Hoyt JL. (2019) Influence of Strained Si1-yGey Layer Thickness and Composition on Hole Mobility Enhancement in Heterostructure p-MOSFETs with Ge Contents y from 0.7 to 1.0 Ecs Transactions. 3: 963-972 |
| Sajjad RN, Chern W, Hoyt JL, et al. (2016) Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs Ieee Transactions On Electron Devices. 63: 4380-4387 |
| Li W, Fay P, Yu T, et al. (2016) Microwave detection performance of In0.53Ga0.47As/GaAs0.5Sb0.5 quantum-well tunnel field-effect transistors Electronics Letters. 52: 842-844 |
| Polyzoeva E, Abdul Hadi S, Nayfeh A, et al. (2015) Reducing optical and resistive losses in graded silicon-germanium buffer layers for silicon based tandem cells using step-cell design Aip Advances. 5 |
| Yu T, Teherani JT, Antoniadis DA, et al. (2014) Effects of substrate leakage and drain-side thermal barriers in In0.53Ga0.47As/GaAs0.5Sb0.5quantum-well tunneling field-effect transistors Applied Physics Express. 7 |