| Year |
Citation |
Score |
| 2019 |
Hashemi P, Poweleit C, Canonico M, Hoyt J. Advanced Strained-Silicon and Core-Shell Si/Si1-xGex Nanowires for CMOS Transport Enhancement Ecs Transactions. 33: 687-698. DOI: 10.1149/1.3487599 |
0.482 |
|
| 2019 |
Kim M, Olubuyide O, Yoon J, Hoyt J. Selective Epitaxial Growth of Ge-on-Si for Photodiode Applications Ecs Transactions. 16: 837-847. DOI: 10.1149/1.2986843 |
0.364 |
|
| 2019 |
Hoyt J, Hashemi P, Gomez L. Prospects for Top-Down Fabricated Uniaxial Strained Nanowire MOSFETs Ecs Transactions. 16: 731-734. DOI: 10.1149/1.2986831 |
0.379 |
|
| 2019 |
Hashemi P, Canonico M, Yang JK, Gomez L, Berggren KK, Hoyt J. Fabrication and Characterization of Suspended Uniaxial Tensile Strained-Si Nanowires for Gate-All-Around Nanowire n-MOSFETs Ecs Transactions. 16: 57-68. DOI: 10.1149/1.2986753 |
0.497 |
|
| 2019 |
Ni Chleirigh C, Wang X, Rimple G, Wang Y, Canonico M, Theodore DD, Olubuyide O, Hoyt JL. Laser Spike Annealing of Strained Si/ Strained Si0.3Ge0.7/ Relaxed Si0.7Ge0.3 Dual Channel High Mobility p-MOSFETs Ecs Transactions. 3: 355-362. DOI: 10.1149/1.2356295 |
0.524 |
|
| 2019 |
Ni Chleirigh C, Olubuyide O, Hoyt JL. Influence of Strained Si1-yGey Layer Thickness and Composition on Hole Mobility Enhancement in Heterostructure p-MOSFETs with Ge Contents y from 0.7 to 1.0 Ecs Transactions. 3: 963-972. DOI: 10.1149/1.2355890 |
0.469 |
|
| 2016 |
Sajjad RN, Chern W, Hoyt JL, Antoniadis DA. Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs Ieee Transactions On Electron Devices. 63: 4380-4387. DOI: 10.1109/Ted.2016.2603468 |
0.348 |
|
| 2016 |
Li W, Fay P, Yu T, Hoyt J. Microwave detection performance of In0.53Ga0.47As/GaAs0.5Sb0.5 quantum-well tunnel field-effect transistors Electronics Letters. 52: 842-844. DOI: 10.1049/El.2016.0328 |
0.332 |
|
| 2015 |
Polyzoeva E, Abdul Hadi S, Nayfeh A, Hoyt JL. Reducing optical and resistive losses in graded silicon-germanium buffer layers for silicon based tandem cells using step-cell design Aip Advances. 5. DOI: 10.1063/1.4921945 |
0.462 |
|
| 2014 |
Yu T, Teherani JT, Antoniadis DA, Hoyt JL. Effects of substrate leakage and drain-side thermal barriers in In0.53Ga0.47As/GaAs0.5Sb0.5quantum-well tunneling field-effect transistors Applied Physics Express. 7. DOI: 10.7567/Apex.7.094201 |
0.347 |
|
| 2014 |
Teherani JT, Chern W, Antoniadis DA, Hoyt JL. Ultra-thin, high quality HfO2 on strained-Ge MOS capacitors with low leakage current Ecs Transactions. 64: 267-271. DOI: 10.1149/06406.0267ecst |
0.422 |
|
| 2014 |
Agarwal S, Teherani JT, Hoyt JL, Antoniadis DA, Yablonovitch E. Engineering the electron-hole bilayer tunneling field-effect transistor Ieee Transactions On Electron Devices. 61: 1599-1606. DOI: 10.1109/Ted.2014.2312939 |
0.459 |
|
| 2014 |
Hadi SA, Polyzoeva E, Milakovich T, Bulsara M, Hoyt JL, Fitzgerald EA, Nayfeh A. Novel GaAs0.71P0.29/Si tandem step-cell design 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 1127-1131. DOI: 10.1109/PVSC.2014.6925114 |
0.336 |
|
| 2014 |
Chern W, Hashemi P, Teherani JT, Antoniadis DA, Hoyt JL. Record hole mobility at high vertical fields in planar strained germanium on insulator with asymmetric strain Ieee Electron Device Letters. 35: 309-311. DOI: 10.1109/Led.2014.2300197 |
0.512 |
|
| 2014 |
Dong Y, Chern W, Mooney PM, Hoyt JL, Xia GM. On the role and modeling of compressive strain in Si-Ge interdiffusion for SiGe heterostructures Semiconductor Science and Technology. 29: 15012. DOI: 10.1088/0268-1242/29/1/015012 |
0.492 |
|
| 2014 |
Abdul Hadi S, Hashemi P, DiLello N, Polyzoeva E, Nayfeh A, Hoyt JL. Thin-film Si1-xGex HIT solar cells Solar Energy. 103: 154-159. DOI: 10.1016/J.Solener.2014.01.039 |
0.553 |
|
| 2013 |
Yu T, Teherani JT, Antoniadis DA, Hoyt JL. In0.53 Ga0.47 As GaAs0.5 Sb0.5 Quantum-Well Tunnel-FETs with Tunable Backward Diode Characteristics Ieee Electron Device Letters. 34: 1503-1505. DOI: 10.1109/Led.2013.2287237 |
0.336 |
|
| 2013 |
Teherani JT, Agarwal S, Yablonovitch E, Hoyt JL, Antoniadis DA. Impact of quantization energy and gate leakage in bilayer tunneling transistors Ieee Electron Device Letters. 34: 298-300. DOI: 10.1109/Led.2012.2229458 |
0.399 |
|
| 2013 |
Teherani JT, Chern W, Antoniadis DA, Hoyt JL. Simulation of enhanced hole ballistic velocity in asymmetrically strained Germanium nanowire trigate p-MOSFETs Technical Digest - International Electron Devices Meeting, Iedm. 32.4.1-32.4.4. DOI: 10.1109/IEDM.2013.6724737 |
0.423 |
|
| 2013 |
Zhang R, Chern W, Yu X, Takenaka M, Hoyt JL, Takagi S. High mobility strained-Ge pMOSFETs with 0.7-nm ultrathin EOT using plasma post oxidation HfO2/Al2O3/GeOx gate stacks and strain modulation Technical Digest - International Electron Devices Meeting, Iedm. 26.1.1-26.1.4. DOI: 10.1109/IEDM.2013.6724694 |
0.456 |
|
| 2013 |
Teherani JT, Yu T, Antoniadis DA, Hoyt JL. Electrostatic design of vertical tunneling field-effect transistors 2013 3rd Berkeley Symposium On Energy Efficient Electronic Systems, E3s 2013 - Proceedings. DOI: 10.1109/E3S.2013.6705872 |
0.302 |
|
| 2013 |
Abdul Hadi S, Hashemi P, Dilello N, Polyzoeva E, Nayfeh A, Hoyt JL. Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1xGex/crystalline-Si heterojunction solar cells Aip Advances. 3. DOI: 10.1063/1.4805078 |
0.537 |
|
| 2012 |
Hadi SA, Hashemi P, DiLello N, Nayfeh A, Hoyt JL. Effect of c-Si1-xGex Thickness Grown by LPCVD on the Performance of Thin-Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells Mrs Proceedings. 1447. DOI: 10.1557/Opl.2012.1163 |
0.528 |
|
| 2012 |
Hadi SA, Hashemi P, Dilello N, Nayfeh A, Hoyt JL. Thin film a-Si/c-Si1-xGex/c-Si heterojunction solar cells with Ge content up to 56% Conference Record of the Ieee Photovoltaic Specialists Conference. 5-8. DOI: 10.1109/PVSC.2012.6317556 |
0.453 |
|
| 2012 |
Hashemi P, Chern W, Lee HS, Teherani JT, Zhu Y, Gonsalvez J, Shahidi GG, Hoyt JL. Ultrathin strained-ge channel P-MOSFETs with high-k/metal gate and Sub-1-nm equivalent oxide thickness Ieee Electron Device Letters. 33: 943-945. DOI: 10.1109/Led.2012.2195631 |
0.548 |
|
| 2012 |
Hashemi P, Hoyt JL. High Hole-Mobility Strained- $\hbox{Ge/Si}_{0.6} \hbox{Ge}_{0.4}$ P-MOSFETs With High-K/Metal Gate: Role of Strained-Si Cap Thickness Ieee Electron Device Letters. 33: 173-175. DOI: 10.1109/Led.2011.2176913 |
0.631 |
|
| 2012 |
Chern W, Hashemi P, Teherani JT, Yu T, Dong Y, Xia G, Antoniadis DA, Hoyt JL. High mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs Technical Digest - International Electron Devices Meeting, Iedm. 16.5.1-16.5.4. DOI: 10.1109/IEDM.2012.6479055 |
0.503 |
|
| 2012 |
Teherani JT, Chern W, Antoniadis DA, Hoyt JL, Ruiz L, Poweleit CD, Menéndez J. Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.205308 |
0.57 |
|
| 2012 |
DiLello NA, Johnstone DK, Hoyt JL. Characterization of dark current in Ge-on-Si photodiodes Journal of Applied Physics. 112: 054506. DOI: 10.1063/1.4749259 |
0.399 |
|
| 2011 |
Hadi SA, Hashemi P, Nayfeh A, Hoyt JL. Thin-film a-Si/c-Si 1-xGe x/c-Si heterojunction solar cells: Design and material quality requirements Ecs Transactions. 41: 3-14. DOI: 10.1149/1.3628603 |
0.434 |
|
| 2011 |
Sood AK, Richwine RA, Sood AW, Puri YR, DiLello NA, Hoyt JL, Akinwande TI, Dhar N, Balcerak RS, Bramhall TG. Characterization of SiGe-detector arrays for visible-NIR imaging sensor applications Proceedings of Spie. 8012: 801240. DOI: 10.1117/12.889205 |
0.384 |
|
| 2011 |
Hadi SA, Nayfeh A, Hashemi P, Hoyt J. A-Si/c-Si 1-xGe x/c-Si heterojunction solar cells International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 191-194. DOI: 10.1109/SISPAD.2011.6035083 |
0.417 |
|
| 2011 |
DiLello NA, Hoyt JL. Impact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide Applied Physics Letters. 99: 33508. DOI: 10.1063/1.3615800 |
0.495 |
|
| 2010 |
Sood AK, Richwine RA, Puri YR, DiLello N, Hoyt JL, Dhar N, Balcerak RS, Bramhall TG. Development of SiGe arrays for visible-near IR applications Proceedings of Spie. 7780. DOI: 10.1117/12.866362 |
0.365 |
|
| 2010 |
Gomez L, Chléirigh CN, Hashemi P, Hoyt JL. Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs Ieee Electron Device Letters. 31: 782-784. DOI: 10.1109/Led.2010.2050574 |
0.509 |
|
| 2010 |
Hashemi P, Teherani JT, Hoyt JL. Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-κ/metal-gate: Effects of hydrogen thermal annealing and nanowire shape Technical Digest - International Electron Devices Meeting, Iedm. 34.5.1-34.5.4. DOI: 10.1109/IEDM.2010.5703477 |
0.466 |
|
| 2010 |
Kim M, Hashemi P, Hoyt JL. Increased critical thickness for high Ge-content strained SiGe-on-Si using selective epitaxial growth Applied Physics Letters. 97: 262106. DOI: 10.1063/1.3530433 |
0.519 |
|
| 2010 |
Hashemi P, Kim M, Hennessy J, Gomez L, Antoniadis DA, Hoyt JL. Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors Applied Physics Letters. 96: 63109. DOI: 10.1063/1.3318249 |
0.561 |
|
| 2010 |
Xia G, Hoyt JL. Si-Ge interdiffusion under oxidizing conditions in epitaxial SiGe heterostructures with high compressive stress Applied Physics Letters. 96. DOI: 10.1063/1.3313949 |
0.695 |
|
| 2009 |
Sood AK, Richwine RA, Puri YR, DiLello N, Hoyt JL, Akinwande TI, Horn S, Balcerak RS, Bulman G, Venkatasubramanian R, D'Souza AI, Bramhall TG. Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor Proceedings of Spie - the International Society For Optical Engineering. 7298. DOI: 10.1117/12.820896 |
0.345 |
|
| 2009 |
Gomez L, Hashemi P, Hoyt JL. Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs Ieee Transactions On Electron Devices. 56: 2644-2651. DOI: 10.1109/Ted.2009.2031043 |
0.572 |
|
| 2009 |
Nayfeh OM, Hoyt JL, Antoniadis DA. Strained- $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior Ieee Transactions On Electron Devices. 56: 2264-2269. DOI: 10.1109/Ted.2009.2028055 |
0.517 |
|
| 2009 |
Batten C, Joshi A, Orcutt J, Khilo A, Moss B, Holzwarth CW, Popovic MA, Li H, Smith HL, Hoyt JL, Kartner FX, Ram RJ, Stojanović V, Asanović K. Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics Ieee Micro. 29: 8-21. DOI: 10.1109/Mm.2009.60 |
0.305 |
|
| 2009 |
Hashemi P, Gomez L, Hoyt JL. Gate-All-Around n-MOSFETs With Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter Ieee Electron Device Letters. 30: 401-403. DOI: 10.1109/Led.2009.2013877 |
0.608 |
|
| 2008 |
Chleirigh CN, Theodore ND, Fukuyama H, Mure S, Ehrke H-, Domenicucci A, Hoyt JL. Thickness Dependence of Hole Mobility in Ultrathin SiGe-Channel p-MOSFETs Ieee Transactions On Electron Devices. 55: 2687-2694. DOI: 10.1109/Ted.2008.2003228 |
0.532 |
|
| 2008 |
Nayfeh OM, Chleirigh CN, Hoyt JL, Antoniadis DA. Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes Ieee Electron Device Letters. 29: 468-470. DOI: 10.1109/Led.2008.920280 |
0.576 |
|
| 2008 |
Nayfeh OM, Chleirigh CN, Hennessy J, Gomez L, Hoyt JL, Antoniadis DA. Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions Ieee Electron Device Letters. 29: 1074-1077. DOI: 10.1109/Led.2008.2000970 |
0.552 |
|
| 2008 |
Holzwarth CW, Orcutt JS, Li H, Popovi? MA, Stojanovi? V, Hoyt JL, Ram RJ, Smith HI. Localized substrate removal technique enabling strong-confinement microphotonics in bulk Si CMOS processes 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551466 |
0.352 |
|
| 2008 |
Chléirigh CN, Wang X, Rimple G, Wang Y, Theodore ND, Canonico M, Hoyt JL. Super critical thickness SiGe-channel heterostructure p-type metal-oxide-semiconductor field-effect transistors using laser spike annealing Journal of Applied Physics. 103: 104501. DOI: 10.1063/1.2903849 |
0.604 |
|
| 2008 |
Gomez L, Canonico M, Kim M, Hashemi P, Hoyt JL. Fabrication of Strained-Si/Strained-Ge Heterostructures on Insulator Journal of Electronic Materials. 37: 240-244. DOI: 10.1007/S11664-007-0337-8 |
0.61 |
|
| 2007 |
Barwicz T, Byun H, Gan F, Holzwarth CW, Popović MA, Rakich PT, Watts MR, Ippen EP, Kärtner FX, Smith HI, Orcutt JS, Ram RJ, Stojanovic V, Olubuyide OO, Hoyt JL, et al. Silicon photonics for compact, energy-efficient interconnects [Invited] Journal of Optical Networking. 6: 63-73. DOI: 10.1364/Jon.6.000063 |
0.333 |
|
| 2007 |
Gomez L, Aberg I, Hoyt JL. Electron Transport in Strained-Silicon Directly on Insulator Ultrathin-Body n-MOSFETs With Body Thickness Ranging From 2 to 25 nm Ieee Electron Device Letters. 28: 285-287. DOI: 10.1109/Led.2007.891795 |
0.48 |
|
| 2007 |
Hashemi P, Gomez L, Hoyt JL, Robertson MD, Canonico M. Asymmetric strain in nanoscale patterned strained-Si/strained-Ge/strained- Si heterostructures on insulator Applied Physics Letters. 91. DOI: 10.1063/1.2772775 |
0.549 |
|
| 2007 |
Cho H, Greene BJ, Hoyt JL, Plummer JD. Mechanism of solid phase crystallization of prepatterned nanoscale α-Si pillars Journal of Applied Physics. 101: 104905. DOI: 10.1063/1.2734531 |
0.423 |
|
| 2007 |
Xia G(, Hoyt JL, Canonico M. Si–Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 101: 44901. DOI: 10.1063/1.2430904 |
0.572 |
|
| 2006 |
Antoniadis DA, Aberg I, Chléirigh CN, Nayfeh OM, Khakifirooz A, Hoyt JL. Continuous MOSFET performance increase with device scaling: the role of strain and channel material innovations Ibm Journal of Research and Development. 50: 363-376. DOI: 10.1147/Rd.504.0363 |
0.403 |
|
| 2006 |
Aberg I, Chleirigh CN, Hoyt JL. Ultrathin-body strained-Si and SiGe heterostructure-on-insulator MOSFETs Ieee Transactions On Electron Devices. 53: 1021-1029. DOI: 10.1109/Ted.2006.871847 |
0.587 |
|
| 2006 |
Xia G, Olubuyide OO, Hoyt JL, Canonico M. Strain dependence of Si–Ge interdiffusion in epitaxial Si∕Si1−yGey∕Si heterostructures on relaxed Si1−xGex substrates Applied Physics Letters. 88: 13507. DOI: 10.1063/1.2158706 |
0.704 |
|
| 2006 |
Olubuyide OO, Danielson DT, Kimerling LC, Hoyt JL. Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition Thin Solid Films. 508: 14-19. DOI: 10.1016/J.Tsf.2005.06.120 |
0.399 |
|
| 2005 |
Anjum DH, Li J, Xia G, Hoyt JL, Hull R. Characterization of Ultrathin Strained-Si Channel Layers of n-MOSFETs Using Transmission Electron Microscopy Mrs Proceedings. 864. DOI: 10.1557/PROC-864-E3.9 |
0.562 |
|
| 2005 |
Aberg I, Hoyt JL. Hole transport in UTB MOSFETs in strained-Si directly on insulator with strained-Si thickness less than 5 nm Ieee Electron Device Letters. 26: 661-663. DOI: 10.1109/Led.2005.853648 |
0.614 |
|
| 2005 |
Lei RZ, Tsai W, Aberg I, O'Reilly TB, Hoyt JL, Antoniadis DA, Smith HI, Paul AJ, Green ML, Li J, Hull R. Strain relaxation in patterned strained silicon directly on insulator structures Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2149153 |
0.48 |
|
| 2005 |
Li J, Anjum D, Hull R, Xia G, Hoyt JL. Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging Applied Physics Letters. 87: 222111. DOI: 10.1063/1.2135388 |
0.647 |
|
| 2004 |
Xia G, Nayfeh HM, Lee ML, Fitzgerald EA, Antoniadis DA, Anjum DH, Li J, Hull R, Klymko N, Hoyt JL. Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs Ieee Transactions On Electron Devices. 51: 2136-2144. DOI: 10.1109/Ted.2004.839116 |
0.669 |
|
| 2004 |
Nayfeh HM, Hoyt JL, Antoniadis DA. A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs Ieee Transactions On Electron Devices. 51: 2069-2072. DOI: 10.1109/Ted.2004.838320 |
0.616 |
|
| 2004 |
Jung J, Yu S, Lee ML, Hoyt JL, Fitzgerald EA, Antoniadis DA. Mobility enhancement in dual-channel P-MOSFETs Ieee Transactions On Electron Devices. 51: 1424-1431. DOI: 10.1109/Ted.2004.833588 |
0.545 |
|
| 2004 |
Jung J, Chleirigh CN, Yu S, Olubuyide OO, Hoyt J, Antoniadis DA. Tradeoff between mobility and subthreshold characteristics in dual-channel heterostructure n- and p-MOSFETs Ieee Electron Device Letters. 25: 562-564. DOI: 10.1109/Led.2004.832529 |
0.599 |
|
| 2004 |
Yu S, Jung J, Hoyt JL, Antoniadis DA. Strained-Si-strained-SiGe dual-channel layer structure as CMOS substrate for single workfunction metal-gate technology Ieee Electron Device Letters. 25: 402-404. DOI: 10.1109/Led.2004.829038 |
0.562 |
|
| 2004 |
Cheng Z, Pitera AJ, Lee ML, Jung J, Hoyt JL, Antoniadis DA, Fitzgerald EA. Fully depleted strained-SOI n- and p-MOSFETs on bonded SGOI substrates and study of the SiGe/BOX interface Ieee Electron Device Letters. 25: 147-149. DOI: 10.1109/Led.2003.823057 |
0.509 |
|
| 2004 |
Cheng Z, Jung J, Lee ML, Pitera AJ, Hoyt JL, Antoniadis DA, Fitzgerald EA. Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI) Semiconductor Science and Technology. 19: L48-L51. DOI: 10.1088/0268-1242/19/5/L02 |
0.624 |
|
| 2004 |
Jung J, Yu S, Olubuyide OO, Hoyt JL, Antoniadis DA, Lee ML, Fitzgerald EA. Effect of thermal processing on mobility in strained Si/strained Si1−yGey on relaxed Si1−xGex (xApplied Physics Letters. 84: 3319-3321. DOI: 10.1063/1.1719275 |
0.555 |
|
| 2004 |
Eguchi S, Chleirigh CN, Olubuyide OO, Hoyt JL. Germanium-concentration dependence of arsenic diffusion in silicon germanium alloys Applied Physics Letters. 84: 368-370. DOI: 10.1063/1.1641169 |
0.34 |
|
| 2004 |
Eguchi S, Lee JJ, Rhee SJ, Kwong DL, Lee ML, Fitzgerald EA, Åberg I, Hoyt JL. On the mechanism of ion-implanted As diffusion in relaxed SiGe Applied Surface Science. 224: 59-62. DOI: 10.1016/j.apsusc.2003.08.029 |
0.357 |
|
| 2003 |
Singh DV, Hoyt JL, Gibbons JF. Abrupt Phosphorus Profiles in Si Journal of the Electrochemical Society. 150: G553. DOI: 10.1149/1.1597886 |
0.411 |
|
| 2003 |
Singh D, Hoyt J, Gibbons J. Effect of band alignment and density of states on the collector current in p-Si/n-Si/sub 1-y/C/sub y//p-Si HBTs Ieee Transactions On Electron Devices. 50: 425-432. DOI: 10.1109/TED.2003.808452 |
0.366 |
|
| 2003 |
Nayfeh HM, Leitz CW, Pitera AJ, Fitzgerald EA, Hoyt JL, Antoniadis DA. Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs Ieee Electron Device Letters. 24: 248-250. DOI: 10.1109/Led.2003.810885 |
0.622 |
|
| 2003 |
Drake TS, Ní Chléirigh C, Lee ML, Pitera AJ, Fitzgerald EA, Antoniadis DA, Anjum DH, Li J, Hull R, Klymko N, Hoyt JL. Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers Applied Physics Letters. 83: 875-877. DOI: 10.1063/1.1598649 |
0.52 |
|
| 2003 |
Drake TS, Chléirigh CN, Lee ML, Pitera AJ, Fitzgerald EA, Antoniadis DA, Anjum DH, Li J, Hull R, Klymko N, Hoyt JL. Fabrication of ultra-thin strained silicon on insulator Journal of Electronic Materials. 32: 972-975. DOI: 10.1007/S11664-003-0232-X |
0.573 |
|
| 2002 |
Eguchi S, Hoyt JL, Leitz CW, Fitzgerald EA. Comparison of arsenic and phosphorus diffusion behavior in silicon-germanium alloys Applied Physics Letters. 80: 1743-1745. DOI: 10.1063/1.1458047 |
0.437 |
|
| 2001 |
Eguchi S, Leitz CW, Fitzgerald EA, Hoyt JL. Diffusion Behavior of Ion-Implanted n-type Dopants in Silicon Germanium Mrs Proceedings. 686. DOI: 10.1557/Proc-686-A1.7 |
0.433 |
|
| 2001 |
Cheng Z, Currie MT, Leitz CW, Taraschi G, Lee ML, Pitera A, Hoyt JL, Antoniadis DA, Fitzgerald EA. Relaxed Silicon-Germanium on Insulator (SGOI) Mrs Proceedings. 686: 21-26. DOI: 10.1557/Proc-686-A1.5 |
0.593 |
|
| 2001 |
Cheng Z, Currie MT, Leitz CW, Taraschi G, Fitzgerald EA, Hoyt JL, Antoniadas DA. Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates Ieee Electron Device Letters. 22: 321-323. DOI: 10.1109/55.930678 |
0.598 |
|
| 2001 |
Cheng Z, Taraschi G, Currie MT, Leitz CW, Lee ML, Pitera A, Langdo TA, Hoyt JL, Antoniadis DA, Fitzgerald EA. Relaxed Silicon-Germanium on Insulator Substrate by Layer Transfer Journal of Electronic Materials. 30. DOI: 10.1007/S11664-001-0182-0 |
0.479 |
|
| 2000 |
Greene BJ, Valentino J, Hoyt JL, Gibbons JF. Thin Single Crystal Silicon on Oxide by Lateral Solid Phase Epitaxy of Amorphous Silicon and Silicon Germanium Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A9.3 |
0.427 |
|
| 2000 |
Rim K, Hoyt J, Gibbons J. Fabrication and analysis of deep submicron strained-Si n-MOSFET's Ieee Transactions On Electron Devices. 47: 1406-1415. DOI: 10.1109/16.848284 |
0.464 |
|
| 1999 |
Singh DV, Rim K, Mitchell TO, Hoyt JL, Gibbons JF. Admittance spectroscopy analysis of the conduction band offsets in Si/Si1−x−yGexCy and Si/Si1−yCy heterostructures Journal of Applied Physics. 85: 985-993. DOI: 10.1063/1.369219 |
0.404 |
|
| 1999 |
Singh DV, Rim K, Mitchell TO, Hoyt JL, Gibbons JF. Measurement of the conduction band offsets in Si/Si1−x−yGexCy and Si/Si1−yCy heterostructures using metal-oxide-semiconductor capacitors Journal of Applied Physics. 85: 978-984. DOI: 10.1063/1.369218 |
0.404 |
|
| 1998 |
Rim K, Hoyt JL, Gibbons JF. Enhanced-Mobility Deep Submicron Strained-Si n-MOSFETs The Japan Society of Applied Physics. 1998: 92-93. DOI: 10.7567/Ssdm.1998.D-2-5 |
0.555 |
|
| 1998 |
Hoyt JL, Rim K, Mitchell TO, Singh DV, Gibbons JF. Strain Engineering of Silicon-Based Heterostructures : Materials and Devices The Japan Society of Applied Physics. 1998: 78-79. DOI: 10.7567/Ssdm.1998.D-1-2 |
0.326 |
|
| 1998 |
Rim K, Mitchell TO, Hoyt JL, Fountain G, Gibbons JF. Characteristics of Surface-Channel Strained Si1-yCyn-MOSFETS Mrs Proceedings. 533. DOI: 10.1557/PROC-533-43 |
0.538 |
|
| 1998 |
Hoyt JL, Mitchell TO, Rim K, Singh DV, Gibbons JF. Epitaxial Growth And Electronic Characterization Of Carboncontaining Silicon-Based Heterostructures Mrs Proceedings. 533. DOI: 10.1557/PROC-533-263 |
0.429 |
|
| 1998 |
Takagi S, Hoyt J, Rim K, Welser J, Gibbons J. Evaluation of the valence band discontinuity of Si/Si/sub 1-x/Ge/sub x//Si heterostructures by application of admittance spectroscopy to MOS capacitors Ieee Transactions On Electron Devices. 45: 494-501. DOI: 10.1109/16.658686 |
0.382 |
|
| 1998 |
Rim K, Mitchell TO, Singh DV, Hoyt JL, Gibbons JF, Fountain G. Metal–oxide–semiconductor capacitance–voltage characteristics and band offsets for Si1−yCy/Si heterostructures Applied Physics Letters. 72: 2286-2288. DOI: 10.1063/1.121338 |
0.363 |
|
| 1998 |
Hoyt J, Mitchell T, Rim K, Singh D, Gibbons J. Comparison of Si/Si1−x−yGexCy and Si/Si1−yCy heterojunctions grown by rapid thermal chemical vapor deposition Thin Solid Films. 321: 41-46. DOI: 10.1016/S0040-6090(98)00440-4 |
0.409 |
|
| 1997 |
Fukuda H, Hoyt JL, McCord MA, Pease RFW. Fabrication of silicon nanopillars containing polycrystalline silicon/insulator multilayer structures Applied Physics Letters. 70: 333-335. DOI: 10.1063/1.118387 |
0.348 |
|
| 1996 |
Takagi S, Hoyt JL, Welser JJ, Gibbons JF. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors Journal of Applied Physics. 80: 1567-1577. DOI: 10.1063/1.362953 |
0.517 |
|
| 1995 |
Hoyt JL, Kuo P, Rim K, Welser JJ, Emerson RM, Gibbons JF. Rapid Thermal Processing-Based Heteroepitaxy: Material and Device Challenges Mrs Proceedings. 387. DOI: 10.1557/PROC-387-299 |
0.385 |
|
| 1995 |
Kuo P, Hoyt JL, Gibbons JF, Turner JE, Lefforge D. Boron Diffusion in Si and Si1−xGex Mrs Proceedings. 379. DOI: 10.1557/PROC-379-373 |
0.411 |
|
| 1995 |
Rim K, Takagi S, Welser JJ, Hoyt JL, Gibbons JF. Capacitance-Voltage Characteristics of p-Si/SiGeC Mos Capacitors Mrs Proceedings. 379: 327. DOI: 10.1557/Proc-379-327 |
0.331 |
|
| 1995 |
Kuo P, Hoyt JL, Gibbons JF, Turner JE, Lefforge D. Effects of Si thermal oxidation on B diffusion in Si and strained Si1−xGex layers Applied Physics Letters. 67: 706-708. DOI: 10.1063/1.115281 |
0.465 |
|
| 1995 |
Kuo P, Hoyt JL, Gibbons JF, Turner JE, Lefforge D. Erratum: ‘‘Effects of strain on boron diffusion in Si and Si1−xGex’’ [Appl. Phys. Lett. 66, 580 (1995)] Applied Physics Letters. 66: 1293-1293. DOI: 10.1063/1.114224 |
0.43 |
|
| 1995 |
Kuo P, Hoyt JL, Gibbons JF, Turner JE, Lefforge D. Effects of strain on boron diffusion in Si and Si1−xGex Applied Physics Letters. 66: 580-582. DOI: 10.1063/1.114019 |
0.436 |
|
| 1995 |
Ghani T, Hoyt JL, McCarthy AM, Gibbons JF. Control of implant-damage-enhanced boron diffusion in epitaxially grown n-Si/p-Si1-xGex/n-Si heterojunction bipolar transistors Journal of Electronic Materials. 24: 999-1002. DOI: 10.1007/BF02652973 |
0.372 |
|
| 1994 |
Welser J, Hoyt JL, Gibbons JF. Growth and Processing of Relaxed-Si1-xGex/Strained-Si Structures for Metal-Oxide Semiconductor Applications. Japanese Journal of Applied Physics. 33: 2419-2422. DOI: 10.1143/Jjap.33.2419 |
0.497 |
|
| 1994 |
Welser J, Hoyt J, Gibbons J. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors Ieee Electron Device Letters. 15: 100-102. DOI: 10.1109/55.285389 |
0.432 |
|
| 1994 |
Emerson RM, Hoyt JL, Gibbons JF. Application of limited reaction processing to atomic layer epitaxy: Growth of cadmium telluride using diisopropyl telluride and dimethyl cadmium Applied Physics Letters. 65: 1103-1105. DOI: 10.1063/1.112111 |
0.318 |
|
| 1993 |
Welser J, Hoyt JL, Gibbons JF. Growth and Processing of Relaxed Si1-xGex/Strained Si Structures for MOS Applications The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1993.Pb-1-5 |
0.472 |
|
| 1993 |
Kuo P, Hoyt JL, Gibbons JF, Turner JE, Jacowitz RD, Kamins TI. Comparison of boron diffusion in Si and strained Si1−xGexepitaxial layers Applied Physics Letters. 62: 612-614. DOI: 10.1063/1.108872 |
0.44 |
|
| 1992 |
Nauka K, Kamins TI, Turner JE, King CA, Hoyt JL, Gibbons JF. Admittance spectroscopy measurements of band offsets in Si/Si1−xGex/Si heterostructures Applied Physics Letters. 60: 195-197. DOI: 10.1063/1.106961 |
0.406 |
|
| 1992 |
Kamins TI, Nauka K, Jacowitz RD, Hoyt JL, Noble DB, Gibbons JF. Electrical characteristics of diodes fabricated in selective Si/Si1−x Ge x epitaxial layers Journal of Electronic Materials. 21: 817-824. DOI: 10.1007/BF02665521 |
0.4 |
|
| 1991 |
Ghani T, Hoyt JL, Noble DB, Gibbons JF, Turner JE, Kamins TI. The Extraction of Minority Carrier Lifetime from the Current-Voltage Characteristics of Si/Si1−xGex Devices Mrs Proceedings. 220. DOI: 10.1557/PROC-220-385 |
0.405 |
|
| 1991 |
Hull R, Bean JC, Noble D, Hoyt J, Gibbons JF. Dependence of misfit dislocation velocities upon growth technique and oxygen content in strained GexSi1-x/Si(100) heterostructures Applied Physics Letters. 59: 1585-1587. DOI: 10.1063/1.106292 |
0.329 |
|
| 1991 |
Noble DB, Hoyt JL, Nix WD, Gibbons JF, Laderman SS, Turner JE, Scott MP. The effect of oxygen on the thermal stability of Si1-xGe x strained layers Applied Physics Letters. 58: 1536-1538. DOI: 10.1063/1.105170 |
0.322 |
|
| 1990 |
Noble DB, Hoyt JL, King CA, Gibbons JF, Kamins TI, Scott MP. Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas Applied Physics Letters. 56: 51-53. DOI: 10.1063/1.103176 |
0.31 |
|
| 1990 |
Hoyt JL, King CA, Noble DB, Gronet CM, Gibbons JF, Scott MP, Laderman SS, Rosner SJ, Nauka K, Turner J, Kamins TI. Limited reaction processing: Growth of Si1-xGex/Si for heterojunction bipolar transistor applications Thin Solid Films. 184: 93-106. DOI: 10.1016/0040-6090(90)90402-Y |
0.43 |
|
| 1989 |
Kamins T, Nauka K, Kruger J, Hoyt J, King C, Noble D, Gronet C, Gibbons J. Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors Ieee Electron Device Letters. 10: 503-505. DOI: 10.1109/55.43117 |
0.361 |
|
| 1989 |
King C, Hoyt J, Gronet C, Gibbons J, Scott M, Turner J. Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing Ieee Electron Device Letters. 10: 52-54. DOI: 10.1109/55.32426 |
0.348 |
|
| 1989 |
King CA, Hoyt JL, Noble DB, Gronet CM, Gibbons JF, Scott MP, Kamins TI, Laderman SS. Electrical and Material Quality of Si<inf>1_x</inf>Ge<inf>x</inf>/Si p-N Heterojunctions Produced by Limited Reaction Processing Ieee Electron Device Letters. 10: 159-161. DOI: 10.1109/55.31703 |
0.395 |
|
| 1989 |
King CA, Hoyt JL, Gibbons JF. Bandgap and Transport Properties of Si<inf>1-x</inf>Gex by Analysis of Nearly Ideal Si/Si<inf>1-x</inf>Gex/Si Heterojunction Bipolar Transistors Ieee Transactions On Electron Devices. 36: 2093-2104. DOI: 10.1109/16.40925 |
0.53 |
|
| 1989 |
Noble DB, Hoyt JL, Gibbons JF, Scott MP, Laderman SS, Rosner SJ, Kamins TI. Thermal stability of Si/Si1-xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing Applied Physics Letters. 55: 1978-1980. DOI: 10.1063/1.102138 |
0.463 |
|
| 1988 |
Scott MP, Laderman SS, Kamins TI, Rosner SJ, Nauka K, Noble DB, Hoyt JL, King CA, Gronet CM, Gibbons JF. Onset of Misfit Dislocation Generation in As-Grown and Annealed Sil-XGex/Si Films Mrs Proceedings. 130. DOI: 10.1557/PROC-130-179 |
0.338 |
|
| 1988 |
Hoyt JL, Crabbé EF, Pease RFW, Gibbons JF, Marshall AF. Lateral Uniformity of n+/p Junctions Formed by Arsenic Diffusion from Epitaxially Aligned Polycrystalline Silicon on Silicon Journal of the Electrochemical Society. 135: 1773-1779. DOI: 10.1149/1.2096128 |
0.301 |
|
| 1988 |
King CA, Hoyt JL, Gronet CM, Gibbons JF, Scott MP, Rosner SJ, Reid G, Laderman S, Nauka K, Kamins TI. VB-7 Characterization of p-N Si1−xGex/Si Heterojunctions Grown by Limited Reaction Processing Ieee Transactions On Electron Devices. 35: 2454. DOI: 10.1109/16.8892 |
0.305 |
|
| 1987 |
Hoyt JL, Crabbé EF, Pease RFW, Gibbons JF. Characterization of Arsenic Implanted Epitaxially Aligned Polysilicon-on-Silicon Films Mrs Proceedings. 106. DOI: 10.1557/PROC-106-279 |
0.332 |
|
| 1987 |
Crabbé EF, Hoyt JL, Pease RFW, Gibbons JF. Electrical Characterization of Polysilicon-to-Silicon Interfaces Mrs Proceedings. 106. DOI: 10.1557/PROC-106-247 |
0.302 |
|
| 1987 |
Hoyt JL, Crabbé E, Gibbons JF, Pease RFW. Erratum: Epitaxial alignment of arsenic‐implanted polycrystalline silicon films on 〈100〉 silicon obtained by rapid thermal annealing [Appl. Phys. Lett. 50, 751 (1987)] Applied Physics Letters. 50: 1846-1846. DOI: 10.1063/1.98271 |
0.317 |
|
| 1987 |
Hoyt JL, Crabbé E, Gibbons JF, Pease RFW. Epitaxial alignment of arsenic implanted polycrystalline silicon films on 〈100〉 silicon obtained by rapid thermal annealing Applied Physics Letters. 50: 751-753. DOI: 10.1063/1.98034 |
0.302 |
|
| 1985 |
Hoyt JL, Gibbons JF. Rapid Thermal Annealing of As in Si Mrs Proceedings. 52. DOI: 10.1557/PROC-52-15 |
0.314 |
|
| 1983 |
Pensl G, Schulz M, Stolz P, Johnson N, Gibbons J, Hoyt J. Electronic Defects in Silicon after Transient Isothermal Annealing Mrs Proceedings. 23. DOI: 10.1557/PROC-23-347 |
0.372 |
|
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