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Ravi Shivaraman, Ph.D.

Affiliations: 
2013 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering
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James Stephen Speck grad student 2013 UC Santa Barbara
 (Atom probe tomography of iii-Nitrides.)

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Publications

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Ahmadi E, Chalabi H, Kaun SW, et al. (2014) Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment Journal of Applied Physics. 116
Yang T, Shivaraman R, Speck JS, et al. (2014) The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior Journal of Applied Physics. 116: 113104
Ahmadi E, Shivaraman R, Wu F, et al. (2014) Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime Applied Physics Letters. 104
Shivaraman R, Kawaguchi Y, Tanaka S, et al. (2013) Comparative analysis of 202̄1 and 202̄1 ̄ semipolar GaN light emitting diodes using atom probe tomography Applied Physics Letters. 102
Shivaraman R, Wu Y-, Choi S, et al. (2013) Atom Probe Tomography of III-Nitrides Based Semiconducting Devices Microscopy and Microanalysis. 19: 956-957
Wu Y, Shivaraman R, Wang K, et al. (2012) Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure Applied Physics Letters. 101: 83505
Choi S, Wu F, Shivaraman R, et al. (2012) Publisher’s Note: “Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy” [Appl. Phys. Lett. 100, 232102 (2012)] Applied Physics Letters. 101: 49903
Choi S, Wu F, Shivaraman R, et al. (2012) Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy Applied Physics Letters. 100: 232102
Prosa TJ, Clifton PH, Zhong H, et al. (2011) Erratum: “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate” [Appl. Phys. Lett. 98, 191903 (2011)] Applied Physics Letters. 98: 239901
Prosa TJ, Clifton PH, Zhong H, et al. (2011) Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate Applied Physics Letters. 98: 191903
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