Fangyuan Yang
Affiliations: | Fudan university, Shanghai, Shanghai Shi, China |
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Publications
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Assouline A, Wang T, Zhou H, et al. (2024) Energy Gap of the Even-Denominator Fractional Quantum Hall State in Bilayer Graphene. Physical Review Letters. 132: 046603 |
Yang F, Bai R, Zibrov AA, et al. (2023) Cascade of Multielectron Bubble Phases in Monolayer Graphene at High Landau Level Filling. Physical Review Letters. 131: 226501 |
Guo S, Luo M, Shi G, et al. (2023) An ultra-high vacuum system for fabricating clean two-dimensional material devices. The Review of Scientific Instruments. 94: 013903 |
Zhou H, Holleis L, Saito Y, et al. (2022) Isospin magnetism and spin-polarized superconductivity in Bernal bilayer graphene. Science (New York, N.Y.). eabm8386 |
Yang F, Zibrov AA, Bai R, et al. (2021) Experimental Determination of the Energy per Particle in Partially Filled Landau Levels. Physical Review Letters. 126: 156802 |
Saito Y, Yang F, Ge J, et al. (2021) Isospin Pomeranchuk effect in twisted bilayer graphene. Nature. 592: 220-224 |
Xu C, Liu Y, Cai P, et al. (2020) Anisotropic Transport and Quantum Oscillations in the Quasi-One-Dimensional TaNiTe: Evidence for the Nontrivial Band Topology. The Journal of Physical Chemistry Letters |
Yang F, Zhang Z, Wang N, et al. (2018) Quantum Hall Effect in Electron-doped Black Phosphorus Field-effect Transistors. Nano Letters |
Zhang Z, Li L, Horng J, et al. (2017) Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors. Nano Letters |
Li L, Kim J, Jin C, et al. (2016) Direct observation of the layer-dependent electronic structure in phosphorene. Nature Nanotechnology |