Fangyuan Yang

Affiliations: 
Fudan university, Shanghai, Shanghai Shi, China 
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"Fangyuan Yang"
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Assouline A, Wang T, Zhou H, et al. (2024) Energy Gap of the Even-Denominator Fractional Quantum Hall State in Bilayer Graphene. Physical Review Letters. 132: 046603
Yang F, Bai R, Zibrov AA, et al. (2023) Cascade of Multielectron Bubble Phases in Monolayer Graphene at High Landau Level Filling. Physical Review Letters. 131: 226501
Guo S, Luo M, Shi G, et al. (2023) An ultra-high vacuum system for fabricating clean two-dimensional material devices. The Review of Scientific Instruments. 94: 013903
Zhou H, Holleis L, Saito Y, et al. (2022) Isospin magnetism and spin-polarized superconductivity in Bernal bilayer graphene. Science (New York, N.Y.). eabm8386
Yang F, Zibrov AA, Bai R, et al. (2021) Experimental Determination of the Energy per Particle in Partially Filled Landau Levels. Physical Review Letters. 126: 156802
Saito Y, Yang F, Ge J, et al. (2021) Isospin Pomeranchuk effect in twisted bilayer graphene. Nature. 592: 220-224
Xu C, Liu Y, Cai P, et al. (2020) Anisotropic Transport and Quantum Oscillations in the Quasi-One-Dimensional TaNiTe: Evidence for the Nontrivial Band Topology. The Journal of Physical Chemistry Letters
Yang F, Zhang Z, Wang N, et al. (2018) Quantum Hall Effect in Electron-doped Black Phosphorus Field-effect Transistors. Nano Letters
Zhang Z, Li L, Horng J, et al. (2017) Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors. Nano Letters
Li L, Kim J, Jin C, et al. (2016) Direct observation of the layer-dependent electronic structure in phosphorene. Nature Nanotechnology
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