| Year |
Citation |
Score |
| 1991 |
Eberhart M, Vvedensky D. Grain Boundary Electronic Structure and Materials Design Materials Science Forum. 46: 169-186. DOI: 10.4028/Www.Scientific.Net/Msf.46.169 |
0.561 |
|
| 1990 |
Vvedensky DD, Crampin S, Eberhart ME, Maclaren JM. Quantum mechanics and mechanical properties: Towards twenty-first century materials Contemporary Physics. 31: 73-97. DOI: 10.1080/00107519008222004 |
0.52 |
|
| 1990 |
Vvedensky DD, Eberhart ME, Christodoulou L, Crampin S, MacLaren JM. Interface electronic structure of XDTM titanium aluminide composites Materials Science and Engineering A. 126: 33-40. DOI: 10.1016/0921-5093(90)90111-F |
0.561 |
|
| 1989 |
MacLaren JM, Crampin S, Vvedensky DD, Eberhart ME. Mechanical stability and charge densities near stacking faults Physical Review Letters. 63: 2586-2589. DOI: 10.1103/PhysRevLett.63.2586 |
0.537 |
|
| 1989 |
Crampin S, Vvedensky DD, MacLaren JM, Eberhart ME. Electronic structure near (210) tilt boundaries in nickel Physical Review B. 40: 3413-3416. DOI: 10.1103/Physrevb.40.3413 |
0.617 |
|
| 1989 |
McHenry ME, MacLaren JM, Vvedensky DD, Eberhart ME, Prueitt ML. Formation of local moments on iron in alkali-metal hosts Physical Review B. 40: 10111-10115. DOI: 10.1103/PhysRevB.40.10111 |
0.537 |
|
| 1988 |
McHenry ME, Vvedensky DD, Eberhart ME, O'Handley RC. Symmetry-induced local magnetic moments in icosahedral Al-Mn alloys. Physical Review. B, Condensed Matter. 37: 10887-10890. PMID 9944548 DOI: 10.1103/Physrevb.37.10887 |
0.546 |
|
| 1988 |
Crampin S, Vvedensky D, Maclaren J, Eberhart M. Electronic Structure of Extended Defects in Close-Packed Metals Mrs Proceedings. 141. DOI: 10.1557/Proc-141-373 |
0.552 |
|
| 1988 |
Eberhart ME, Vvedensky DD. Bond strain at grain boundaries Physical Review Letters. 60: 1981. DOI: 10.1103/PhysRevLett.60.1981 |
0.526 |
|
| 1988 |
Eberhart ME, Vvedensky DD. Environmentally specific mechanical properties: Beyond atomic parameters Physical Review B. 37: 8488-8490. DOI: 10.1103/Physrevb.37.8488 |
0.545 |
|
| 1988 |
Eberhart ME, Vvedensky DD. Model for ductility-enhancement in the L12 intermetallic compounds Scripta Metallurgica. 22: 1183-1188. DOI: 10.1016/S0036-9748(88)80128-5 |
0.488 |
|
| 1987 |
Eberhart ME, Vvedensky DD. Localized grain-boundary electronic states and intergranular fracture Physical Review Letters. 58: 61-64. DOI: 10.1103/Physrevlett.58.61 |
0.578 |
|
| 1987 |
Vvedensky DD, Eberhart ME, McHenry ME. Electronic structure of magnetic impurities in copper Physical Review B. 35: 2061-2063. DOI: 10.1103/PhysRevB.35.2061 |
0.57 |
|
| 1987 |
Vvedensky DD, Eberhart ME. Toward a microscopic basis for mechanical behaviour Philosophical Magazine Letters. 55: 157-161. DOI: 10.1080/09500838708207549 |
0.532 |
|
| 1979 |
Johnson KH, Vvedensky DD, Messmer RP. New theoretical model for transition-metal impurities alloyed in copper, local magnetic moments, and the Kondo effect Physical Review B. 19: 1519-1547. DOI: 10.1103/Physrevb.19.1519 |
0.452 |
|
| Low-probability matches (unlikely to be authored by this person) |
| 1990 |
Hampel K, Vvedensky D, Crampin S. First-Principles Calculations of Stacking Faults and Grain Boundaries in Metals Mrs Proceedings. 213. DOI: 10.1557/PROC-213-57 |
0.291 |
|
| 1995 |
Orme C, Johnson MD, Leung KT, Orr BG, Smilauer P, Vvedensky D. Studies of large scale unstable growth formed during GaAs(001) homoepitaxy Journal of Crystal Growth. 150: 128-135. DOI: 10.1016/0022-0248(95)80194-H |
0.268 |
|
| 1979 |
JOHNSON KH, YANG CY, VVEDENSKY D, MESSMER RP, SALAHUB DR. ChemInform Abstract: ELECTRONIC STRUCTURE OF METAL AND ALLOY SURFACES Chemischer Informationsdienst. 10. DOI: 10.1002/Chin.197939317 |
0.265 |
|
| 1994 |
Vvedensky D. New slant on epitaxial growth Physics World. 7: 30-31. DOI: 10.1088/2058-7058/7/3/31 |
0.265 |
|
| 1989 |
MacLaren JM, Crampin S, Vvedensky DD, Pendry JB. Layer Korringa-Kohn-Rostoker technique for surface and interface electronic properties Physical Review B. 40: 12164-12175. DOI: 10.1103/Physrevb.40.12164 |
0.249 |
|
| 1985 |
MacLaren JM, Pendry JB, Vvedensky DD, Joyner RW. Influence of poisons and promoters on local bonding of CO to Ni(100) Surface Science. 162: 322-328. DOI: 10.1016/0039-6028(85)90915-X |
0.245 |
|
| 1993 |
Hampel K, Vvedensky DD, Crampin S. Magnetic structure near (310) tilt boundaries in iron Physical Review B. 47: 4810-4813. DOI: 10.1103/PhysRevB.47.4810 |
0.241 |
|
| 1990 |
Aebi P, Erbudak M, Vanini F, Vvedensky DD, Kostorz G. L and M edges of copper: Theory and experiment Physical Review B. 41: 11760-11769. DOI: 10.1103/Physrevb.41.11760 |
0.228 |
|
| 1990 |
MacLaren JM, Crampin S, Vvedensky DD, Albers RC, Pendry JB. Layer Korringa-Kohn-Rostoker electronic structure code for bulk and interface geometries Computer Physics Communications. 60: 365-389. DOI: 10.1016/0010-4655(90)90035-Y |
0.212 |
|
| 2016 |
Morgan S, Vvedensky D, Shah R, Girardi T, Newschaffer C, Katzman P, Miller R, Moye J, Salafia C. Arterial chorionic surface vessel branch point density and autism risk Placenta. 45: 74. DOI: 10.1016/J.Placenta.2016.06.052 |
0.211 |
|
| 1986 |
Vvedensky DD, Creswick RJ. Nonlinear quantum and classical renormalization-group trajectories for the interacting Bose fluid. Physical Review. B, Condensed Matter. 34: 7760-7763. PMID 9939457 DOI: 10.1103/Physrevb.34.7760 |
0.208 |
|
| 1991 |
Taylor JPG, Hugill KJ, Vvedensky DD, MacKinnon A. Electronic properties of compositionally disordered quantum wires Physical Review Letters. 67: 2359-2362. DOI: 10.1103/PhysRevLett.67.2359 |
0.202 |
|
| 1994 |
Dudarev SL, Vvedensky DD, Whelan MJ. Statistical treatment of dynamical electron diffraction from growing surfaces Physical Review B. 50: 14525-14538. DOI: 10.1103/PhysRevB.50.14525 |
0.198 |
|
| 2003 |
Schindler AC, Gyure MF, Simms GD, Vvedensky DD, Caflisch RE, Connell C, Luo E. Theory of strain relaxation in heteroepitaxial systems Physical Review B - Condensed Matter and Materials Physics. 67: 753161-7531614. |
0.195 |
|
| 1989 |
MacLaren JM, Crampin S, Vvedensky DD. Layer Korringa-Kohn-Rostoker theory for close-spaced planes of atoms Physical Review B. 40: 12176-12182. DOI: 10.1103/PhysRevB.40.12176 |
0.192 |
|
| 1995 |
Vvedensky DD, Smilauer P. Step-edge barriers, re-entrant oscillations, and unstable epitaxial growth Materials Research Society Symposium - Proceedings. 367: 263-272. |
0.192 |
|
| 1990 |
Aebi P, Erbudak M, Vanini F, Vvedensky DD, Kostorz G. Nondipole channels in the electron-energy-loss structure near the 3s edge of copper Physical Review B. 42: 5369-5372. DOI: 10.1103/Physrevb.42.5369 |
0.19 |
|
| 1992 |
Crampin S, Monnier R, Schulthess T, Schadler GH, Vvedensky DD. Interdiffusion and magnetism in Cu/Ni/Cu sandwiches Physical Review B. 45: 464-467. DOI: 10.1103/PhysRevB.45.464 |
0.19 |
|
| 1990 |
Crampin S, Hampel K, Vvedensky DD, MacLaren JM. Calculation of stacking fault energies in close-packed metals Journal of Materials Research. 5: 2107-2119. |
0.189 |
|
| 1997 |
Joyce BA, Sudijono JL, Belk JG, Yamaguchi H, Zhang XM, Dobbs HT, Zangwill A, Vvedensky DD, Jones TS. A scanning tunneling microscopy-reflection high energy electron diffraction-rate equation study of the molecular beam epitaxial growth of InAs on GaAs(001), (110) and (111)A - Quantum dots and two-dimensional modes Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36: 4111-4117. |
0.189 |
|
| 1987 |
MacLaren JM, Vvedensky DD, Pendry JB, Joyner RW. Catalytic implications of local electronic interactions between carbon monoxide and coadsorbed promoters on nickel surfaces Journal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases. 83: 1945-1962. DOI: 10.1039/F19878301945 |
0.189 |
|
| 1992 |
Shitara T, Vvedensky DD, Wilby MR, Zhang J, Neave JH, Joyce BA. Misorientation dependence of epitaxial growth on vicinal GaAs(001) Physical Review B. 46: 6825-6833. DOI: 10.1103/PhysRevB.46.6825 |
0.186 |
|
| 1987 |
Clarke S, Vvedensky DD. Influence of surface step density on reflection high-energy-electron diffraction specular intensity during epitaxial growth Physical Review B. 36: 9312-9314. DOI: 10.1103/PhysRevB.36.9312 |
0.186 |
|
| 2003 |
Caflisch RE, Connell C, Luo E, Gyure M, Simms G, Vvedensky D. Modeling and simulation for epitaxial growth with strain 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 3: 37-38. |
0.184 |
|
| 1993 |
Crampin S, Vvedensky DD, Monnier R. Stacking fault energies of random metallic alloys Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 67: 1447-1457. DOI: 10.1080/01418619308225366 |
0.184 |
|
| 2016 |
Schubert D, Leonard A, Lee J, Morgan S, Vvedensky D, Newschaffer C, Shah R, Miller R, Katzman P, Moye J, Salafia C. Familial high ASD risk differs from a low risk cohort by longer segment lengths and potential reduced branching in early but not later branch generations. Placenta. 45: 74-75. DOI: 10.1016/J.Placenta.2016.06.053 |
0.183 |
|
| 1990 |
Myers-Beaghton AK, Vvedensky DD. Nonequilibrium lattice models of epitaxial growth Surface Science. 232: 161-184. DOI: 10.1016/0039-6028(90)90596-Z |
0.183 |
|
| 1994 |
Ratsch C, Zangwill A, Milauer P, Vvedensky DD. Saturation and scaling of epitaxial island densities Physical Review Letters. 72: 3194-3197. DOI: 10.1103/PhysRevLett.72.3194 |
0.182 |
|
| 1993 |
Smilauer P, Wilby MR, Vvedensky DD. Hopping barriers at step edges Materials Research Society Symposium Proceedings. 312: 261-266. |
0.181 |
|
| 1990 |
Vvedensky DD, Clarke S, Wilby MR. Theory of epitaxial growth and recovery on Si(001) Progress in Surface Science. 35: 87-101. DOI: 10.1016/0079-6816(90)90028-I |
0.179 |
|
| 2008 |
Haselwandter CA, Raymond L, Verga A, Vvedensky DD. Occam's razor on surfaces: Renormalization of microscopic processes Journal of Physics Condensed Matter. 20. DOI: 10.1088/0953-8984/20/30/304203 |
0.179 |
|
| 1988 |
MacLaren JM, Vvedensky DD, Pendry JB, Joyner RW. Electronic response and poisoning of catalytic reactions Journal of Catalysis. 110: 243-248. DOI: 10.1016/0021-9517(88)90316-8 |
0.178 |
|
| 1999 |
Joyce BA, Vvedensky DD, Bell GR, Belk JG, Itoh M, Jones TS. Nucleation and growth mechanisms during MBE of III-V compounds Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 67: 7-16. DOI: 10.1016/S0921-5107(99)00203-2 |
0.177 |
|
| 2013 |
Dimastrodonato V, Pelucchi E, Zestanakis PA, Vvedensky DD. Transient and self-limited nanostructures on patterned surfaces Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/PhysRevB.87.205422 |
0.177 |
|
| 1996 |
Ratsch C, Šmilauer P, Vvedensky DD, Zangwill A. Mechanism for Coherent Island Formation during Heteroepitaxy Journal De Physique I. 6: 575-581. DOI: 10.1051/Jp1:1996230 |
0.175 |
|
| 1991 |
Myers-Beaghton AK, Vvedensky DD. Generalized Burton-Cabrera-Frank theory for growth and equilibration on stepped surfaces Physical Review A. 44: 2457-2468. DOI: 10.1103/PhysRevA.44.2457 |
0.175 |
|
| 2014 |
Gocalinska A, Manganaro M, Juska G, Dimastrodonato V, Thomas K, Joyce BA, Zhang J, Vvedensky DD, Pelucchi E. Unusual nanostructures of "lattice matched" InP on AlInAs Applied Physics Letters. 104. DOI: 10.1063/1.4871086 |
0.172 |
|
| 1993 |
Šmilauer P, Wilby MR, Vvedensky DD. Morphology of singular and vicinal metal surfaces sputtered at different temperatures Surface Science. 291: L733-L738. DOI: 10.1016/0039-6028(93)91468-5 |
0.171 |
|
| 1995 |
Ratsch C, Šmilauer P, Zangwill A, Vvedensky DD. Submonolayer epitaxy without a critical nucleus Surface Science. 329: L599-L604. DOI: 10.1016/0039-6028(95)00353-3 |
0.17 |
|
| 1991 |
Aebi P, Erbudak M, Vanini F, Vvedensky DD, Kostorz G. Core excitations and secondary electron spectra of Cu(100) Surface Science. 251: 341-345. DOI: 10.1016/0039-6028(91)91010-U |
0.168 |
|
| 2002 |
Ratsch C, Gyure MF, Caflisch RE, Gibou F, Petersen M, Kang M, Garcia J, Vvedensky DD. Level-set method for island dynamics in epitaxial growth Physical Review B - Condensed Matter and Materials Physics. 65: 1954031-19540313. DOI: 10.1103/Physrevb.65.195403 |
0.168 |
|
| 2008 |
Haselwandter CA, Vvedensky DD. Renormalization of stochastic lattice models: epitaxial surfaces. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 77: 061129. PMID 18643239 DOI: 10.1103/PhysRevE.77.061129 |
0.167 |
|
| 1992 |
Aebi P, Erbudak M, Vanini F, Vvedensky DD. Secondary-electron and energy-loss spectra of copper Surface Science. 264: L181-L186. DOI: 10.1016/0039-6028(92)90151-U |
0.167 |
|
| 1991 |
Myers-Beaghton AK, Vvedensky DD. Nonlinear diffusion equation for epitaxial growth and recovery on vicinal surfaces Journal of Crystal Growth. 111: 162-167. DOI: 10.1016/0022-0248(91)90964-7 |
0.167 |
|
| 2008 |
Haselwandter CA, Vvedensky DD. Renormalization of atomistic growth models International Journal of Modern Physics B. 22: 3721-3755. DOI: 10.1142/S0217979208048747 |
0.166 |
|
| 1996 |
Smilauer P, Vvedensky DD. Step-edge barriers on GaAs(001) Materials Research Society Symposium - Proceedings. 399: 229-241. DOI: 10.1103/PhysRevB.48.17603 |
0.165 |
|
| 1991 |
Clarke S, Wilby MR, Vvedensky DD. Theory of homoepitaxy on Si(001). I. Kinetics during growth Surface Science. 255: 91-110. DOI: 10.1016/0039-6028(91)90013-I |
0.164 |
|
| 1997 |
Dobbs HT, Vvedensky DD, Zangwill A, Johansson J, Carlsson N, Seifert W. Mean-field theory of quantum dot formation Physical Review Letters. 79: 897-900. |
0.163 |
|
| 1998 |
Joyce BA, Vvedensky DD, Avery AR, Belk JG, Dobbs HT, Jones TS. Nucleation mechanisms during MBE growth of lattice-matched and strained III-V compound films Applied Surface Science. 130: 357-366. DOI: 10.1016/S0169-4332(98)00084-1 |
0.163 |
|
| 2007 |
Haselwandter CA, Vvedensky DD. Multiscale theory of fluctuating interfaces: renormalization of atomistic models. Physical Review Letters. 98: 046102. PMID 17358788 DOI: 10.1103/PhysRevLett.98.046102 |
0.162 |
|
| 1994 |
Wetli E, Erbudak M, Vvedensky DD. Secondary-electron imaging of disordered submonolayers Surface Science. 317: 235-240. DOI: 10.1016/0039-6028(94)90270-4 |
0.16 |
|
| 1994 |
Joyce BA, Vvedensky DD. 'Atomic arrangements': join Japan to a UK University Advanced Materials. 6: 265-268. |
0.159 |
|
| 2004 |
Joyce BA, Vvedensky DD. Self-organized growth on GaAs surfaces Materials Science and Engineering R: Reports. 46: 127-176. DOI: 10.1016/j.mser.2004.10.001 |
0.159 |
|
| 1991 |
Joyce BA, Zhang J, Foxon CT, Vvedensky DD, Shitara T, Myers-Beaghton AK. Growth dynamics of lattice matched and strained layer III-V compounds in MBE Proceedings of Spie - the International Society For Optical Engineering. 1361: 13-22. |
0.158 |
|
| 1998 |
Vvedensky D, Caflisch R, Gyure M, Merriman B, Osher S, Ratsch C, Zinck J. Island-Size Distributions for Submonolayer Epitaxy: Rate Equations and Beyond Mrs Proceedings. 528. DOI: 10.1557/PROC-528-261 |
0.157 |
|
| 1998 |
Vvedensky DD, Caflisch RE, Gyure MF, Merriman B, Osher S, Ratsch C, Zinck JJ. Island-size distributions for submonolayer epitaxy: Rate equations and beyond Materials Research Society Symposium - Proceedings. 528: 261-274. DOI: 10.1557/Proc-528-261 |
0.157 |
|
| 1992 |
Shitara T, Vvedensky DD, Wilby MR, Zhang J, Neave JH, Joyce BA. Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001) Physical Review B. 46: 6815-6824. DOI: 10.1103/PhysRevB.46.6815 |
0.157 |
|
| 1988 |
Clarke S, Vvedensky DD. Growth kinetics and step density in reflection high-energy electron diffraction during molecular-beam epitaxy Journal of Applied Physics. 63: 2272-2283. DOI: 10.1063/1.341041 |
0.157 |
|
| 1990 |
Vvedensky DD, Clarke S. Recovery kinetics during interrupted epitaxial growth Surface Science. 225: 373-389. DOI: 10.1016/0039-6028(90)90458-K |
0.156 |
|
| 1992 |
Shitara T, Vvedensky DD, Wilby MR, Zhang J, Neave JH, Joyce BA. Morphological model of reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on GaAs(001) Applied Physics Letters. 60: 1504-1506. DOI: 10.1063/1.107285 |
0.156 |
|
| 2013 |
Dimastrodonato V, Pelucchi E, Vvedensky DD. Morphological evolution of seeded self-limiting quantum dots on patterned substrates Aip Conference Proceedings. 1566: 31-32. DOI: 10.1063/1.4848270 |
0.156 |
|
| 2014 |
Gocalinska A, Manganaro M, Juska G, Dimastrodonato V, Thomas K, Joyce BA, Zhang J, Vvedensky DD, Pelucchi E. Inp-AlInAs "strain free" early stages heteroepitaxy leading to nanostructure formation by MOVPE Conference Proceedings - International Conference On Indium Phosphide and Related Materials. DOI: 10.1109/ICIPRM.2014.6880536 |
0.155 |
|
| 1998 |
Itoh M, Bell GR, Avery AR, Jones TS, Joyce BA, Vvedensky DD. Island nucleation and growth on reconstructed GaAs(001) surfaces Physical Review Letters. 81: 633-636. |
0.155 |
|
| 2007 |
Haselwandter CA, Vvedensky DD. Multiscale theory of fluctuating interfaces: Renormalization and self-organization International Journal of Modern Physics B. 21: 4151-4157. |
0.154 |
|
| 1993 |
Vvedensky DD, Shitara T, Smilauer P, Kaneko T, Zangwill A. From adatom migration to chemical kinetics: Models for MBE, MOMBE and MOCVD Materials Research Society Symposium Proceedings. 312: 3-13. |
0.154 |
|
| 1993 |
Milauer P, Wilby MR, Vvedensky DD. Reentrant layer-by-layer growth: A numerical study Physical Review B. 47: 4119-4122. DOI: 10.1103/PhysRevB.47.4119 |
0.154 |
|
| 1989 |
Vvedensky DD, Wenzel L, Arvanitis D, Baberschke K, Dobler U. Adsorbate-induced reconstruction on transition-metal and noble-metal surfaces Physica B: Physics of Condensed Matter. 158: 634-636. DOI: 10.1016/0921-4526(89)90418-3 |
0.153 |
|
| 1996 |
Vvedensky DD. Atomistic modeling of epitaxial growth: Comparisons between lattice models and experiment Computational Materials Science. 6: 182-187. DOI: 10.1016/0927-0256(96)00033-X |
0.153 |
|
| 2013 |
Dimastrodonato V, Pelucchi E, Zestanakis PA, Vvedensky DD. Morphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxy Applied Physics Letters. 103. DOI: 10.1063/1.4816415 |
0.152 |
|
| 2000 |
Bolliger B, Erbudak M, Hensch A, Vvedensky DD. Surface structural phase transitions on icosahedral Al-Pd-Mn Materials Science and Engineering A. 294: 859-862. DOI: 10.1016/S0921-5093(00)01078-9 |
0.15 |
|
| 1999 |
Bolliger B, Erbudak M, Vvedensky DD, Kortan AR. Surface structural transitions on Al3Pd Physical Review B - Condensed Matter and Materials Physics. 59: 7346-7349. |
0.15 |
|
| 1989 |
Clarke S, Wilby MR, Vvedensky DD, Kawamura T. Interaction of structure with kinetics in Si(001) homoepitaxy Thin Solid Films. 183: 221-227. DOI: 10.1016/0040-6090(89)90447-1 |
0.15 |
|
| 1999 |
Joyce BA, Vvedensky DD, Jones TS, Itoh M, Bell GR, Belk JG. In situ studies of III-V semiconductor film growth by molecular beam epitaxy Journal of Crystal Growth. 201: 106-112. DOI: 10.1016/S0022-0248(98)01295-0 |
0.148 |
|
| 1991 |
Myers-Beaghton AK, Taylor JPG, Vvedensky DD, Hugill KJ, MacKinnon A. Growth kinetics and electronic characteristics of quantum wires Journal of Crystal Growth. 111: 328-332. DOI: 10.1016/0022-0248(91)90995-H |
0.147 |
|
| 1990 |
Myers-Beaghton AK, Vvedensky DD. Nonlinear theory for epitaxial growth of semiconductor alloys on vicinal surfaces Surface Science. 240: L599-L603. DOI: 10.1016/0039-6028(90)90723-L |
0.147 |
|
| 1990 |
Joyce BA, Neave JH, Zhang J, Vvedensky DD, Clarke S, Hugill KJ, Shitara T, Myers-Beaghton AK. Growth of III-V compounds on vicinal planes by molecular beam epitaxy Semiconductor Science and Technology. 5: 1147-1154. DOI: 10.1088/0268-1242/5/12/001 |
0.146 |
|
| 1999 |
Vvedensky DD, Itoh M, Bell GR, Jones TS, Joyce BA. Island nucleation and growth during homoepitaxy on GaAs(0 0 1)-(2×4) Journal of Crystal Growth. 201: 56-61. DOI: 10.1016/S0022-0248(98)01280-9 |
0.146 |
|
| 1987 |
Clarke S, Vvedensky DD. Origin of reflection high-energy electron-diffraction intensity oscillations during molecular-beam epitaxy: A Computational Modeling Approach Physical Review Letters. 58: 2235-2238. DOI: 10.1103/PhysRevLett.58.2235 |
0.145 |
|
| 1988 |
Clarke S, Vvedensky DD. Growth mechanism for molecular-beam epitaxy of group-IV semiconductors Physical Review B. 37: 6559-6562. DOI: 10.1103/PhysRevB.37.6559 |
0.145 |
|
| 1989 |
Clarke S, Wilby MR, Vvedensky DD, Kawamura T. Simulation of recovery kinetics in Si(001) molecular-beam epitaxy Physical Review B. 40: 1369-1372. DOI: 10.1103/PhysRevB.40.1369 |
0.145 |
|
| 1990 |
Clarke S, Wilby MR, Vvedensky DD, Kawamura T, Miki K, Tokumoto H. Step stability, domain coverage, and nonequilibrium kinetics in Si(001) molecular-beam epitaxy Physical Review B. 41: 10198-10201. DOI: 10.1103/PhysRevB.41.10198 |
0.144 |
|
| 1999 |
Bell GR, Itoh M, Jones TS, Joyce BA, Vvedensky DD. Islands and defects on the growing InAs(001)-(2 × 4) surface Surface Science. 433: 455-459. DOI: 10.1016/S0039-6028(99)00114-4 |
0.143 |
|
| 2012 |
Lloyd-Williams JH, Monserrat B, Vvedensky DD, Zangwill A. Epitaxial kinetics with an intermediate polyatomic species Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.161402 |
0.141 |
|
| 1993 |
Shitara T, Suzuki T, Vvedensky DD, Nishinaga T. Adatom concentration profiles on stimulated vicinal surfaces during epitaxial growth Materials Research Society Symposium Proceedings. 280: 131-134. |
0.141 |
|
| 2017 |
Nasrollahi SH, Vvedensky DD. Cooperative Jahn-Teller phase transition of icosahedral molecular units. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 29: 065401. PMID 28002046 DOI: 10.1088/1361-648X/29/6/065401 |
0.14 |
|
| 1998 |
Dobbs HT, Vvedensky DD, Zangwill A. Theory of quantum dot formation in Stranski-Krastanov systems Applied Surface Science. 123: 646-652. |
0.139 |
|
| 1993 |
Shitara T, Kaneko T, Vvedensky DD. Precursor-mediated epitaxial growth of GaAs(001) from triethylgallium: Where is the gallium released Applied Physics Letters. 63: 3321-3323. DOI: 10.1063/1.110188 |
0.139 |
|
| 2012 |
Gocalinska A, Manganaro M, Pelucchi E, Vvedensky DD. Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/PhysRevB.86.165307 |
0.138 |
|
| 1993 |
Kew J, Wilby MR, Vvedensky DD. Continuous-space Monte Carlo simulations of epitaxial growth Journal of Crystal Growth. 127: 508-512. DOI: 10.1016/0022-0248(93)90671-I |
0.138 |
|
| 1997 |
Avery AR, Dobbs HT, Holmes DM, Joyce BA, Vvedensky DD. Nucleation and growth of islands on GaAs surfaces Physical Review Letters. 79: 3938-3941. |
0.138 |
|
| 2004 |
Vvedensky DD. Multiscale modelling of nanostructures Journal of Physics Condensed Matter. 16: R1537-R1576. DOI: 10.1088/0953-8984/16/50/R01 |
0.138 |
|
| 1993 |
Vvedensky DD, Zangwill A, Luse CN, Wilby MR. Stochastic equations of motion for epitaxial growth Physical Review E. 48: 852-862. DOI: 10.1103/Physreve.48.852 |
0.137 |
|
| 1995 |
Koshiba S, Noda T, Noge H, Nakamura Y, Ichinose H, Shitara T, Vvedensky DD, Sakaki H. Control of ridge shape for the formation of nanometer-scale GaAs ridge quantum wires by molecular beam epitaxy Journal of Crystal Growth. 150: 322-326. DOI: 10.1016/0022-0248(94)00904-X |
0.137 |
|
| 1990 |
Myers-Beaghton AK, Vvedensky DD. Nonlinear equation for diffusion and adatom interactions during epitaxial growth on vicinal surfaces Physical Review B. 42: 5544-5554. DOI: 10.1103/PhysRevB.42.5544 |
0.136 |
|
| 1995 |
Milauer P, Vvedensky DD. Coarsening and slope evolution during unstable spitaxial growth Physical Review B. 52: 14263-14272. DOI: 10.1103/PhysRevB.52.14263 |
0.136 |
|
| 1989 |
Myers-Beaghton AK, Vvedensky DD. Chapman-Kolmogorov equation for Markov models of epitaxial growth Journal of Physics a: Mathematical and General. 22: L467-L475. DOI: 10.1088/0305-4470/22/11/004 |
0.135 |
|
| 1992 |
Luse CN, Zangwill A, Vvedensky DD, Wilby MR. Adatom mobility on vicinal surfaces during epitaxial growth Surface Science. 274: L535-L540. DOI: 10.1016/0039-6028(92)90518-B |
0.135 |
|
| 2001 |
Vvedensky DD. Epitaxial phenomena across length and time scales Surface and Interface Analysis. 31: 627-636. DOI: 10.1002/sia.1090 |
0.134 |
|
| 1999 |
Caflisch RE, Gyure MF, Merriman B, Osher SJ, Ratsch C, Vvedensky DD, Zinck JJ. Island dynamics and the level set method for epitaxial growth Applied Mathematics Letters. 12: 13-22. DOI: 10.1016/S0893-9659(99)00026-9 |
0.133 |
|
| 1985 |
Vvedensky DD, Saldin DK, Pendry JB. Xanes and diffuse leed for atoms and complex molecules on surfaces Surface Science. 156: 845-850. DOI: 10.1016/0039-6028(85)90257-2 |
0.133 |
|
| 1990 |
Myers-Beaghton AK, Vvedensky DD. Nonlinear model for temporal evolution of stepped surfaces during molecular-beam epitaxy Physical Review B. 42: 9720-9723. DOI: 10.1103/PhysRevB.42.9720 |
0.132 |
|
| 1993 |
Shitara T, Suzuki T, Vvedensky DD, Nishinaga T. Concentration profiles of surface atoms during epitaxial growth on vicinal surfaces Applied Physics Letters. 62: 1347-1349. DOI: 10.1063/1.108674 |
0.132 |
|
| 1992 |
Wilby MR, Vvedensky DD, Zangwill A. Scaling in a solid-on-solid model of epitaxial growth Physical Review B. 46: 12896-12898. DOI: 10.1103/PhysRevB.46.12896 |
0.132 |
|
| 2004 |
Haselwandter CA, Vvedensky DD. From atomistic to continuum descriptions of morphological evolution Materials Research Society Symposium Proceedings. 859: 124-129. |
0.132 |
|
| 1988 |
Brydson R, Vvedensky DD, Engel W, Sauer H, Williams BG, Zeitler E, Thomas JM. Chemical information from electron-energy-loss near-edge structure. Core hole effects in the beryllium and boron K-edges in rhodizite Journal of Physical Chemistry. 92: 962-966. |
0.132 |
|
| 1987 |
Vvedensky DD, Pendry JB, Döbler U, Baberschke K. Quantitative multiple-scattering analysis of near-edge x-ray-absorption fine structure: C(22)O on Cu(100) Physical Review B. 35: 7756-7759. DOI: 10.1103/PhysRevB.35.7756 |
0.131 |
|
| 1992 |
Kenny S, Wilby MR, Myers-Beaghton AK, Vvedensky DD. Cluster dynamics on vicinal surfaces Physical Review B. 46: 10345-10352. DOI: 10.1103/PhysRevB.46.10345 |
0.131 |
|
| 1993 |
Haider N, Wilby MR, Vvedensky DD. Correlation length scaling during the early stages of epitaxial growth Materials Research Society Symposium Proceedings. 280: 135-138. |
0.129 |
|
| 1993 |
Amilauer P, Wilby MR, Vvedensky DD. Shape of the surface-step-density oscillations during sputtering of singular and vicinal surfaces Physical Review B. 48: 4968-4971. DOI: 10.1103/PhysRevB.48.4968 |
0.128 |
|
| 2012 |
Dimastrodonato V, Pelucchi E, Vvedensky DD. Self-limiting evolution of seeded quantum wires and dots on patterned substrates Physical Review Letters. 108. DOI: 10.1103/PhysRevLett.108.256102 |
0.128 |
|
| 1989 |
Vvedensky DD, Clarke S. Model for Epitaxial growth of Cobalt on CU(100) Mrs Proceedings. 160. DOI: 10.1557/PROC-160-221 |
0.127 |
|
| 1989 |
Wilby MR, Clarke S, Kawamura T, Vvedensky DD. Anisotropic kinetics and bilayer epitaxial growth of Si(001) Physical Review B. 40: 10617-10620. DOI: 10.1103/PhysRevB.40.10617 |
0.127 |
|
| 2015 |
Edmunds DM, Tangney P, Vvedensky DD, Foulkes WM. Free-energy coarse-grained potential for C60. The Journal of Chemical Physics. 143: 164509. PMID 26520529 DOI: 10.1063/1.4932591 |
0.127 |
|
| 1997 |
Mizushima K, Vvedensky DD, Šmilauer P, Zangwill A, Zhang J, Joyce BA. Effect of hydrogen on the growth kinetics of Si(0 0 1) during GSMBE from disilane Journal of Crystal Growth. 175: 509-513. |
0.126 |
|
| 2011 |
Zangwill A, Vvedensky DD. Novel growth mechanism of epitaxial graphene on metals. Nano Letters. 11: 2092-5. PMID 21495700 DOI: 10.1021/Nl2006005 |
0.125 |
|
| 1993 |
Shitara T, Vvedensky DD, Neave JH, Joyce BA. Common features of epitaxial growth on vicinal GaAs(001), AlAs(001) and InAs(001) surfaces Materials Research Society Symposium Proceedings. 312: 267-272. |
0.124 |
|
| 1990 |
Vvedensky DD, Clarke S, Hugill KJ, Wilby MR, Kawamura T. Growth kinetics on vicinal surfaces Journal of Crystal Growth. 99: 54-59. DOI: 10.1016/0022-0248(90)90483-2 |
0.123 |
|
| 1989 |
Clarke S, Wilby MR, Vvedensky DD, Kawamura T, Sakamoto T. Monolayer to bilayer transition in reflection high-energy electron diffraction intensity oscillations during Si(001) molecular beam epitaxy Applied Physics Letters. 54: 2417-2418. DOI: 10.1063/1.101093 |
0.121 |
|
| 2007 |
Haselwandter CA, Vvedensky DD. Renormalization of stochastic lattice models: basic formulation. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 76: 041115. PMID 17994944 DOI: 10.1103/PhysRevE.76.041115 |
0.12 |
|
| 1998 |
Bolliger B, Erbudak M, Vvedensky DD, Zurkirch M, Kortan AR. Surface structural transitions on the icosahedral quasicrystal Al70oPd70Mn10 Physical Review Letters. 80: 5369-5372. |
0.119 |
|
| 1989 |
Clarke S, Wilby M, Vvedensky D. Si(001) Molecular Beam Epitaxy: Enhanced Diffusion or Bonding? Mrs Proceedings. 159. DOI: 10.1557/PROC-159-247 |
0.118 |
|
| 1999 |
Bolliger B, Erbudak M, Vvedensky DD, Kortan AR. Decagonal Epilayers on the Icosahedral Quasicrystal Al70Pd20Mn10 Physical Review Letters. 82: 763-766. |
0.118 |
|
| 2016 |
Tetlow H, Posthuma de Boer J, Ford IJ, Vvedensky DD, Curcio D, Omiciuolo L, Lizzit S, Baraldi A, Kantorovich L. Ethylene decomposition on Ir(111): initial path to graphene formation. Physical Chemistry Chemical Physics : Pccp. PMID 27711652 DOI: 10.1039/c6cp03638d |
0.116 |
|
| 1995 |
Kaneko T, Milauer P, Joyce BA, Kawamura T, Vvedensky DD. Reentrant layer-by-layer etching of GaAs(001) Physical Review Letters. 74: 3289-3292. DOI: 10.1103/PhysRevLett.74.3289 |
0.116 |
|
| 1998 |
Gyure MF, Zinck JJ, Ratsch C, Vvedensky DD. Unstable growth on rough surfaces Physical Review Letters. 81: 4931-4934. DOI: 10.1103/Physrevlett.81.4931 |
0.116 |
|
| 1987 |
Clarke S, Vvedensky DD. Computational investigation of RHEED intensity evolutions during growth by MBE Surface Science. 189: 1033-1040. DOI: 10.1016/S0039-6028(87)80546-0 |
0.114 |
|
| 2014 |
Tetlow H, Posthuma de Boer J, Ford IJ, Vvedensky DD, Coraux J, Kantorovich L. Growth of epitaxial graphene: Theory and experiment Physics Reports. 542: 195-295. DOI: 10.1016/j.physrep.2014.03.003 |
0.114 |
|
| 2003 |
Vvedensky DD. Edwards-Wilkinson equation from lattice transition rules. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 67: 025102. PMID 12636731 DOI: 10.1103/PhysRevE.67.025102 |
0.114 |
|
| 1992 |
Joyce BA, Shitara T, Yoshinaga A, Vvedensky DD, Neave JH, Zhang J. Elementary processes in the MBE growth of GaAs Applied Surface Science. 60: 200-209. DOI: 10.1016/0169-4332(92)90417-V |
0.114 |
|
| 1985 |
Vvedensky DD, Saldin DK, Pendry JB. Azimuthal and polar-angle dependence in xanes of low-symmetry adsorption sites Surface Science. 162: 909-912. DOI: 10.1016/0039-6028(85)90997-5 |
0.113 |
|
| 1995 |
Haider N, Khaddaj SA, Wilby MR, Vvedensky DD. Parallel Monte Carlo simulations of epitaxial growth Computers in Physics. 9: 85-96. DOI: 10.1063/1.168538 |
0.113 |
|
| 1995 |
Dudarev S, Vvedensky D, Whelan M. Addendum to “Dynamical electron scattering from growing surfaces” [Surface Science 324 (1995) L335] Surface Science. 336: L753. DOI: 10.1016/0039-6028(95)00591-9 |
0.113 |
|
| 2009 |
Johnson KH, Vvedensky DD, Messmer RP. New theoretical model for magnetic impurities and the kondo effect International Journal of Quantum Chemistry. 14: 437-439. DOI: 10.1002/qua.560140837 |
0.112 |
|
| 2001 |
Vvedensky DD. Refractory ceramic coatings: Processes, systems and wettability/adhesion Surface and Interface Analysis. 31: 659-672. DOI: 10.1002/Sia.1092 |
0.112 |
|
| 2007 |
Haselwandter CA, Vvedensky DD. Fluctuation regimes of driven epitaxial surfaces Epl. 77. DOI: 10.1209/0295-5075/77/38004 |
0.109 |
|
| 1989 |
Clarke S, Vvedensky DD, Ricketts MW. Influence of surface morphology upon recovery kinetics during interrupted epitaxial growth Journal of Crystal Growth. 95: 28-31. DOI: 10.1016/0022-0248(89)90343-6 |
0.109 |
|
| 1993 |
Haider N, Wilby MR, Vvedensky DD. Growth kinetics of non-planar substrates Journal of Crystal Growth. 127: 922-926. DOI: 10.1016/0022-0248(93)90761-K |
0.108 |
|
| 1998 |
Gyure MF, Ratsch C, Merriman B, Caflisch RE, Osher S, Zinck JJ, Vvedensky DD. Level-set methods for the simulation of epitaxial phenomena Physical Review E. 58: R6927-R6930. DOI: 10.1103/Physreve.58.R6927 |
0.108 |
|
| 1986 |
Döbler U, Baberschke K, Vvedensky DD, Pendry JB. X-ray absorption near-edge structure of adsorbate-induced reconstruction: (2 × 1)O on Cu(110) Surface Science. 178: 679-685. DOI: 10.1016/0039-6028(86)90343-2 |
0.108 |
|
| 2000 |
Ratsch C, Gyure MF, Chen S, Kang M, Vvedensky DD. Fluctuations and scaling in aggregation phenomena Physical Review B - Condensed Matter and Materials Physics. 61: R10598-R10601. DOI: 10.1103/Physrevb.61.R10598 |
0.108 |
|
| 2006 |
Dalla Volta A, Vvedensky DD, Gogneau N, Pelucchi E, Rudra A, Dwir B, Kapon E, Ratsch C. Step ordering induced by nonplanar patterning of GaAs surfaces Applied Physics Letters. 88. DOI: 10.1063/1.2204441 |
0.107 |
|
| 1993 |
Haider N, Wilby MR, Vvedensky DD. Epitaxial growth kinetics on patterned substrates Applied Physics Letters. 62: 3108-3110. DOI: 10.1063/1.109153 |
0.107 |
|
| 1995 |
Dudarev SL, Vvedensky DD, Whelan MJ. Dynamical electron scattering from growing surfaces Surface Science. 324: L355-L361. DOI: 10.1016/0039-6028(94)00811-6 |
0.107 |
|
| 1991 |
Myers-Beaghton AK, Vvedensky DD. Step dynamics on vicinal Si(001) during epitaxial growth Applied Physics Letters. 59: 2013-2015. DOI: 10.1063/1.106138 |
0.106 |
|
| 1989 |
Hugill KJ, Clarke S, Vvedensky DD, Joyce BA. Quantum-well-wire growth by molecular-beam epitaxy: A computer simulation study Journal of Applied Physics. 66: 3415-3417. DOI: 10.1063/1.344095 |
0.105 |
|
| 1989 |
Hugill K, Shitara T, Clarke S, Vvedensky D, Joyce B. Step Profile Fluctuations in Quantum-Well Wire Growth on Vicinal Surfaces Mrs Proceedings. 160. DOI: 10.1557/PROC-160-405 |
0.105 |
|
| 2008 |
Chua ALS, Pelucchi E, Rudra A, Dwir B, Kapon E, Zangwill A, Vvedensky DD. Theory and experiment of step bunching on misoriented GaAs(001) during metalorganic vapor-phase epitaxy Applied Physics Letters. 92. DOI: 10.1063/1.2832370 |
0.105 |
|
| 1985 |
Vvedensky DD, Pendry JB. Multi-atom correlations in X-ray absorption near-edge structure Surface Science. 162: 903-908. DOI: 10.1016/0039-6028(85)90996-3 |
0.104 |
|
| 2003 |
Vvedensky DD. Crossover and universality in the Wolf-Villain model. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 68: 010601. PMID 12935119 DOI: 10.1103/PhysRevE.68.010601 |
0.098 |
|
| 1986 |
Vvedensky DD, Saldin DK, Pendry JB. An update of DLXANES, the calculation of X-ray absorption near-edge structure Computer Physics Communications. 40: 421-440. DOI: 10.1016/0010-4655(86)90122-0 |
0.097 |
|
| 1999 |
Bolliger B, Erbudak M, Hensch A, Kortan AR, Vvedensky DD. Symmetry changes at the surface of Al70Pd20Mn10 Materials Research Society Symposium - Proceedings. 553: 257-261. DOI: 10.1557/PROC-553-257 |
0.097 |
|
| 1993 |
Yokotsuka T, Wilby MR, Vvedensky DD, Kawamura T, Fukutani K, Ino S. Competitive kinetic processes during homoepitaxial growth on Ge(111) Applied Physics Letters. 62: 1673-1675. DOI: 10.1063/1.108622 |
0.096 |
|
| 1993 |
Yokotsuka T, Wilby MR, Vvedensky DD, Kawamura T, Fukutani K, Ino S. Incorporation and diffusion kinetics during epitaxial growth on Ge(111) Journal of Crystal Growth. 127: 479-483. DOI: 10.1016/0022-0248(93)90665-J |
0.095 |
|
| 1983 |
Vvedensky DD, Chang TS, Nicoll JF. Closed-form irreducible differential formulations of the Wilson renormalization group Physical Review A. 27: 3311-3327. DOI: 10.1103/PhysRevA.27.3311 |
0.094 |
|
| 1992 |
Vvedensky DD, Maksym PA, Sakamoto T, Kawamura T, Clarke S, Wilby MR. Theoretical approach to RHEED intensity oscillations Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory. 56: 31-36. |
0.094 |
|
| 2005 |
Chua AL, Haselwandter CA, Baggio C, Vvedensky DD. Langevin equations for fluctuating surfaces. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 72: 051103. PMID 16383589 DOI: 10.1103/PhysRevE.72.051103 |
0.094 |
|
| 1997 |
Erbudak M, Wetli E, Hochstrasser M, Pescia D, Vvedensky DD. Surface phase transitions during martensitic transformations of single-crystal Co Physical Review Letters. 79: 1893-1896. |
0.093 |
|
| 2006 |
Haselwandter CA, Vvedensky DD. Stochastic equation for the morphological evolution of heteroepitaxial thin films Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/PhysRevB.74.121408 |
0.092 |
|
| 2000 |
Itoh M, Bell GR, Joyce BA, Vvedensky DD. Transformation kinetics of homoepitaxial islands on GaAs(001) Surface Science. 464: 200-210. DOI: 10.1016/S0039-6028(00)00667-1 |
0.092 |
|
| 1992 |
Chang TS, Vvedensky DD, Nicoll JF. Differential renormalization-group generators for static and dynamic critical phenomena Physics Reports. 217: 279-360. DOI: 10.1016/0370-1573(92)90041-W |
0.089 |
|
| 1999 |
Bolliger B, Erbudak M, Vvedensky DD, Kortan AR. Planar and cluster structure of icosahedral quasicrystals Czechoslovak Journal of Physics. 49: 1531-1536. |
0.089 |
|
| 1997 |
Mizushima K, Smilauer P, Vvedensky DD. Effects of hydrogen on nucleation of islands during Si(001) MBE growth Materials Research Society Symposium - Proceedings. 440: 141-144. |
0.088 |
|
| 1989 |
Thornton G, Wincott PL, McGrath R, McGovern IT, Quinn FM, Norman D, Vvedensky DD. Bonding sites for Cl on Si(100)2×1 and Si(111)7×7 Physica B: Physics of Condensed Matter. 158: 640-642. DOI: 10.1016/0921-4526(89)90420-1 |
0.088 |
|
| 2007 |
Haselwandter CA, Vvedensky DD. Langevin equation for self-organized morphologies of thin heteroepitaxial films Surface Science. 601: 2762-2764. DOI: 10.1016/j.susc.2006.12.041 |
0.088 |
|
| 2009 |
Raymond L, Verga A, Vvedensky DD. Article Materials Science in Semiconductor Processing. 12: 2-5. DOI: 10.1016/j.mssp.2009.04.001 |
0.087 |
|
| 2000 |
Vvedensky DD. Scaling functions for island-size distributions Physical Review B - Condensed Matter and Materials Physics. 62: 15435-15438. DOI: 10.1103/PhysRevB.62.15435 |
0.087 |
|
| 1991 |
Zangwillt A, Luset CN, Vvedensky DD, Wilby MR. Epitaxial Growth and Recovery: an Analytic Approach Mrs Proceedings. 237. DOI: 10.1557/PROC-237-189 |
0.086 |
|
| 1998 |
Šmilauer P, Mizushima K, Vvedensky DD. Activated Si-H exchange at Si-Island edges on Si(001) Physical Review Letters. 81: 5600-5603. |
0.085 |
|
| 1990 |
Myers-Beaghton AK, Vvedensky DD. Nonlinear diffusion equation for crystal growth on stepped surfaces Journal of Physics a: Mathematical and General. 23: L995-L1001. DOI: 10.1088/0305-4470/23/18/010 |
0.084 |
|
| 1985 |
Vvedensky DD, Pendry JB. Comment on "experimental study of multiple scattering in x-ray-absorption near-edge structure" Physical Review Letters. 54: 2725. DOI: 10.1103/PhysRevLett.54.2725 |
0.083 |
|
| 1985 |
Elderfield D, Vvedensky DD. Non-equilibrium scaling in the Schlogl model Journal of Physics a: Mathematical and General. 18: 2591-2601. DOI: 10.1088/0305-4470/18/13/034 |
0.083 |
|
| 1984 |
Vvedensky DD, Elderfield DJ, Chang TS. Critical fluctuations around non-equilibrium steady states Journal of Physics a: Mathematical and General. 17: L423-L426. DOI: 10.1088/0305-4470/17/8/006 |
0.083 |
|
| 2012 |
Seong RK, Salafia CM, Vvedensky DD. Statistical topology of radial networks: A case study of tree leaves Philosophical Magazine. 92: 230-245. DOI: 10.1080/14786435.2011.614965 |
0.081 |
|
| 2010 |
Haselwandter CA, Vvedensky DD. Transient regimes and crossover for epitaxial surfaces. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 81: 021606. PMID 20365573 DOI: 10.1103/PhysRevE.81.021606 |
0.079 |
|
| 1992 |
Zangwill A, Luse CN, Vvedensky DD, Wilby MR. Equations of motion for epitaxial growth Surface Science. 274: L529-L534. DOI: 10.1016/0039-6028(92)90517-A |
0.078 |
|
| 2014 |
de Boer JP, Ford IJ, Kantorovich L, Vvedensky DD. Optimization algorithm for rate equations with an application to epitaxial graphene. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 26: 185008. PMID 24759121 DOI: 10.1088/0953-8984/26/18/185008 |
0.077 |
|
| 2011 |
Pelucchi E, Dimastrodonato V, Rudra A, Leifer K, Kapon E, Bethke L, Zestanakis PA, Vvedensky DD. Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/PhysRevB.83.205409 |
0.076 |
|
| 1986 |
Elderfield DJ, Vvedensky DD. Appearance of correlations and symmetry breaking in non-equilibrium reaction-diffusion systems Journal of Physics a: Mathematical and General. 19: L137-L142. DOI: 10.1088/0305-4470/19/3/008 |
0.076 |
|
| 1998 |
Tang LH, Šmilauer P, Vvedensky DD. Noise-assisted mound coarsening in epitaxial growth European Physical Journal B. 2: 409-412. |
0.076 |
|
| 1987 |
Clarke S, Vvedensky DD. Epitaxial growth quality optimization by supercomputer Applied Physics Letters. 51: 340-342. DOI: 10.1063/1.98434 |
0.075 |
|
| 1987 |
Vvedensky DD. Invariants, characteristics and global geometry of large-n renormalisation group trajectories Journal of Physics a: Mathematical and General. 20: 197-202. DOI: 10.1088/0305-4470/20/4/003 |
0.075 |
|
| 1985 |
Vvedensky DD, Pendry JB. Fast XANES perturbation schemes Surface Science. 152: 33-37. DOI: 10.1016/0039-6028(85)90122-0 |
0.074 |
|
| 2018 |
Westbroek MJE, Coche GA, King PR, Vvedensky DD. Evaluation of the path integral for flow through random porous media. Physical Review. E. 97: 042119. PMID 29758682 DOI: 10.1103/PhysRevE.97.042119 |
0.067 |
|
| 1995 |
Vvedensky D, Smilauer P. Kinetic Models of Epitaxial Growth: Theory and Experiment Acta Physica Polonica A. 87: 25-33. DOI: 10.12693/APhysPolA.87.25 |
0.067 |
|
| 1995 |
Ratsch C, Šmilauer P, Zangwill A, Vvedensky D. Erratum to “Submonolayer epitaxy without a critical nucleus” [Surface Science 329 (1995) L599] Surface Science. 338: L889-L890. DOI: 10.1016/0039-6028(95)80047-6 |
0.065 |
|
| 2014 |
Dimastrodonato V, Pelucchi E, Zestanakis PA, Vvedensky DD. Erratum: Transient and self-limited nanostructures on patterned surfaces [Phys. Rev. B87, 205422 (2013)] Physical Review B. 90. DOI: 10.1103/PhysRevB.90.079903 |
0.065 |
|
| 2003 |
Farhadi AA, Vvedensky DD. Risk, randomness, crashes and quants Contemporary Physics. 44: 237-257. DOI: 10.1080/0010751031000077396 |
0.064 |
|
| 1982 |
Vvedensky DD. Operator Methods in Quantum Mechanics Physics Bulletin. 33: 139-140. DOI: 10.1088/0031-9112/33/4/037 |
0.063 |
|
| 2022 |
Bhatnagar A, Vvedensky DD. Quantum effects in an expanded Black-Scholes model. The European Physical Journal. B. 95: 138. PMID 36062253 DOI: 10.1140/epjb/s10051-022-00402-0 |
0.062 |
|
| 2006 |
Haselwandter CA, Vvedensky DD. Scaling of ballistic deposition from a Langevin equation. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 73: 040101. PMID 16711773 DOI: 10.1103/PhysRevE.73.040101 |
0.059 |
|
| 1991 |
Wilby MR, Ricketts MW, Clarke S, Vvedensky DD. Simulation with animation: microscopic growth kinetics of Si(001) homoepitaxy Journal of Crystal Growth. 111: 864-869. DOI: 10.1016/0022-0248(91)91098-U |
0.058 |
|
| 2001 |
Baggio C, Vardavas R, Vvedensky DD. Fokker-Planck equation for lattice deposition models Physical Review E - Statistical, Nonlinear, and Soft Matter Physics. 64: 451031-451034. |
0.057 |
|
| 2011 |
Farnudi B, Vvedensky DD. Large-scale simulations with distributed computing: Asymptotic scaling of ballistic deposition Journal of Physics: Conference Series. 286. DOI: 10.1088/1742-6596/286/1/012031 |
0.056 |
|
| 2013 |
Seong RK, Getreuer P, Li Y, Girardi T, Salafia CM, Vvedensky DD. Statistical geometry and topology of the human placenta Fields Institute Communications. 66: 187-208. DOI: 10.1007/978-1-4614-5389-5_8 |
0.056 |
|
| 2017 |
Leonard AS, Lee J, Schubert D, Croen LA, Fallin MD, Newschaffer CJ, Walker CK, Salafia CM, Morgan SP, Vvedensky DD. Scaling of the surface vasculature on the human placenta. Physical Review. E. 96: 040401. PMID 29347569 DOI: 10.1103/PhysRevE.96.040401 |
0.054 |
|
| 1984 |
Vvedensky DD. Comment: Differential formulations of the renormalisation group in the large-n limit Journal of Physics a: Mathematical and General. 17: 709-713. DOI: 10.1088/0305-4470/17/3/032 |
0.054 |
|
| 2015 |
Moroni ST, Dimastrodonato V, Chung TH, Juska G, Gocalinska A, Vvedensky DD, Pelucchi E. Indium segregation during III-V quantum wire and quantum dot formation on patterned substrates Journal of Applied Physics. 117. DOI: 10.1063/1.4919362 |
0.052 |
|
| 2011 |
Farnudi B, Vvedensky DD. Large-scale simulations of ballistic deposition: the approach to asymptotic scaling. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 83: 020103. PMID 21405801 DOI: 10.1103/PhysRevE.83.020103 |
0.052 |
|
| 2014 |
Gill JS, Woods MP, Salafia CM, Vvedensky DD. Probability distributions for measures of placental shape and morphology. Physiological Measurement. 35: 483-500. PMID 24557061 DOI: 10.1088/0967-3334/35/3/483 |
0.05 |
|
| 2018 |
Nasrollahi SH, Vvedensky DD. Local normal modes and lattice dynamics Journal of Applied Physics. 124: 045102. DOI: 10.1063/1.5034437 |
0.048 |
|
| 2002 |
Haselwandter C, Vvedensky DD. Fluctuations in the lattice gas for Burgers' equation Journal of Physics a: Mathematical and General. 35: L579-L584. DOI: 10.1088/0305-4470/35/41/104 |
0.047 |
|
| 1984 |
Vvedensky DD. General solutions of large-n renormalisation group equations Journal of Physics a: Mathematical and General. 17: L251-L255. DOI: 10.1088/0305-4470/17/5/006 |
0.047 |
|
| 2018 |
Posthuma de Boer J, Ford IJ, Kantorovich L, Vvedensky DD. Phase-field method for epitaxial kinetics on surfaces. The Journal of Chemical Physics. 149: 194107. PMID 30466263 DOI: 10.1063/1.5049548 |
0.046 |
|
| 2020 |
Gocalinska AM, Mura EE, Manganaro M, Juska G, Dimastrodonato V, Thomas K, Zangwill A, Vvedensky DD, Pelucchi E. Early stages of InP nanostructure formation on AlInAs Physical Review B. 101. DOI: 10.1103/Physrevb.101.165310 |
0.042 |
|
| 2000 |
Itoh M, Bell GR, Joyce BA, Vvedensky DD. Monte Carlo simulation of GaAs(001) homoepitaxy Progress of Theoretical Physics Supplement. 90-95. |
0.039 |
|
| 2011 |
Gill JS, Salafia CM, Grebenkov D, Vvedensky DD. Modeling oxygen transport in human placental terminal villi Journal of Theoretical Biology. 291: 33-41. PMID 21959313 DOI: 10.1016/j.jtbi.2011.09.008 |
0.039 |
|
| 2017 |
Pelucchi E, Moroni ST, Dimastrodonato V, Vvedensky DD. Self-ordered nanostructures on patterned substrates Journal of Materials Science: Materials in Electronics. 29: 952-967. DOI: 10.1007/s10854-017-7993-0 |
0.034 |
|
| 1998 |
Gyure MF, Ratsch C, Merriman B, Caflisch RE, Osher S, Zinck JJ, Vvedensky DD. Level-set methods for the simulation of epitaxial phenomena Physical Review E - Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics. 58: R6927-R6930. |
0.033 |
|
| 2011 |
Miller R, Rinderknecht A, Ornoy A, Stodgell C, Salafia C, Katzman P, Yampolsky M, Vvedensky D, Penmetsa A, Domalski R. Comparative placentology, placental models and the next generation of therapies Reproductive Toxicology. 31: 250-250. DOI: 10.1016/j.reprotox.2010.12.062 |
0.033 |
|
| 2018 |
Westbroek MJE, King PR, Vvedensky DD, Dürr S. User's guide to Monte Carlo methods for evaluating path integrals American Journal of Physics. 86: 293-304. DOI: 10.1119/1.5024926 |
0.032 |
|
| 1999 |
Vvedensky DD. Scaling and universality for submonolayer epitaxy Turkish Journal of Physics. 23: 191-192. |
0.026 |
|
| 1989 |
Ricketts B, Vvedensky D, Clarke S. Seeing is believing Physics World. 2: 39-42. DOI: 10.1088/2058-7058/2/12/23 |
0.024 |
|
| 2013 |
Barkhudarov ED, Vvedensky DD. Renormalization group analysis of turbulent magnetohydrodynamics Journal of Coupled Systems and Multiscale Dynamics. 1: 74-88. DOI: 10.1166/jcsmd.2013.1008 |
0.024 |
|
| 2003 |
Vvedensky DD, Ratsch C, Gibou F, Vardavas R, Amar JG, Popescu MN, Family F. Singularities and spatial fluctuations in submonolayer epitaxy (multiple letters) Physical Review Letters. 90: 189601/1-189602/1. |
0.021 |
|
| 1982 |
Vvedensky D, Chang T. Operator expansions for critical dynamics Physics Letters A. 90: 459-461. DOI: 10.1016/0375-9601(82)90396-6 |
0.019 |
|
| 2003 |
Vvedensky DD, Ratsch C, Gibou F, Vardavas R. Singularities and spatial fluctuations in submonolayer epitaxy. Physical Review Letters. 90: 189601; author reply. PMID 12786050 DOI: 10.1103/PhysRevLett.90.189601 |
0.016 |
|
| 2019 |
Westbroek MJE, Coche G, King PR, Vvedensky DD. Pressure statistics from the path integral for Darcy flow through random porous media Journal of Physics a: Mathematical and Theoretical. 52: 185001. DOI: 10.1088/1751-8121/ab1100 |
0.01 |
|
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